4045/3004/4045层状铝合金复合材料连铸制备方法

本文旨在开发出制备复合锭坯的新技术,在新型热顶石墨环结晶器中安装冷却板,采用直接水冷半连续铸造法实现了4045/3004/4045铝合金三层复合锭的实验室制备,研究了复合锭坯的宏观形貌、微观组织,并考察了界面两侧元素分布以及铸造过程中界面附近3004合金熔体的温度分布.结果表明:在冷却板的作用下界面附近形成了一层温度分布较为均匀的固态支撑层,从而保证复合铸造过程的顺利实现,复合界面结合较好,且为一种冶金结合;由界面抗拉强度测试结果可知界面的结合强度均高于96 MPa,进一步证明了两种合金的结合是一种冶金结合.     

动态布流平面凝固铸造AA1070/AA7050合金

提出了一种新的用于大尺寸复层铸锭平面凝固铸造的布流系统,并使用软件FLUENT对铸造过程中分流方式对温度场的影响进行了模拟分析,模拟结果表明,使用动态布流时熔体温度的均匀性显著优于定口布流,因而可实现凝固时固/液界面在上升过程中保持平坦。使用动态布流平面凝固铸造方法实现了1070/7050大尺寸双层铝合金的铸造复合,铸造结果表明,复合铸锭中两种铝合金的界面清晰平直,无气孔夹杂等缺陷,实现了冶金结合并存在元素扩散层;7050侧金相组织均匀,厚度方向上无明显宏观偏析。     

HT300/7CrMnSiMoV双金属复合铸造汽车模具组织性能的研究

采用扫描电镜、显微硬度计、Instron-3382型力学性能试验机等,对双液复合铸造铸件的界面结合情况、微观组织和力学性能进行研究。结果表明:采用合理的铸造生产工艺,成功制备了满足使用性能要求的HT300/7CrMnSiMoV双金属汽车模具铸件,其复合界面清晰、致密,无明显缩孔、缩松等铸造缺陷;复合界面由钢基体区、过渡区和铁基体区3个区域组成。过渡区呈犬牙状/锯齿形结构,过渡层厚度约为400μm,界面附近Cr和Si元素呈梯度分布,两种合金冶金结合状态良好;复合界面两侧显微硬度呈梯度分布,其抗拉强度达到339 MPa,断裂位置出现在灰铸铁一侧,双金属界面的结合强度高于灰铸铁。     

接触反应法解决铝/不锈钢钎焊的缺陷及脆性

为满足不锈钢电加热餐具生产的需要,提出采用接触反应钎焊的方法实现复合电热餐具的铝热管与铝板、铝板与不锈钢板结构的高致密连接.研究表明:Si中间层介质与铝基体之间的共晶反应所产生的Al-Si共晶液相,能够将铝加热管与铝板、铝板与不锈钢板大面积结构致密地连接在一起;接触反应钎焊初期存在Al/Si固相扩散反应的液相反应萌生,该过程与加热阶段Si的固态扩散、液相层扩展和成分均匀化共同构成接触反应钎焊接头成缝过程;接触反应钎焊初期液相反应萌生以Al/Si固相界面的扩散为主要控制过程,其受控于Si向Al基体内的固相扩散速率,液相层的扩展和成分均匀化受控于Al在Al-Si液相中的扩散速率,是液相产生的主要阶段;接触反应钎焊依靠反应液相层的阻隔延迟效应,限制了铝/不锈钢异种材料间脆性化合物的生成,使得反应层薄,钎缝强度高.     

Al-Si-Cu-Zn钎料钎焊3003铝合金的接头组织及力学性能

采用自制的Al-Si-Cu-Zn钎料对3003铝合金进行钎焊实验,利用X射线衍射、扫描电镜、能谱仪对接头微观组织和断口进行分析,并研究了钎焊温度对接头组织和性能的影响。结果表明:在540~580℃保温10min工艺下钎焊3003铝合金,均可获得良好的钎焊效果。钎焊接头均由钎缝中心区的α(Al)固溶体、θ(Al2Cu)金属间化合物、细小Si相和AlCuFeMn+Si相,两侧扩散区的α(Al)固溶体与元素扩散层以及母材组成;钎焊接头室温剪切断裂于扩散区齿状α(Al)/钎缝中心区的交界面,断口主要呈脆性解理断裂特征。随着钎焊温度的升高,扩散区的α(Al)固溶体晶粒长大,接头结合界面犬牙交错;当钎焊温度为560℃,保温10min时,接头的室温抗剪强度达到最大值92.3MPa,约为母材强度的62.7%。     

喷射轧制钢/Al-Pb复合轴瓦带材的组织与性能

采用喷射轧制工艺制备了钢/Al-8.5Pb-4Si-Cu-0.5Sn复合轴瓦带材,分析了所制备材料的组织及性能.结果表明,用喷射轧制工艺制备的轴瓦合金Al-Si基体中分布有均匀细小的Pb相粒子,经过50%变形量的轧制和在320℃后续退火5h的处理,在复合轴瓦带材的界面处发生了合金元素的扩散,形成了良好的冶金结合层,界面强度高,剪切强度达到72MPa.用喷射轧制工艺制备的轴瓦合金具有良好的耐磨性能.     

压力条件下固-液复合法制备铜/锌复合材料的研究

采用压力条件下固-液复合法,在不同的锌液浇注温度下制备了铜/锌复合材料,并对其界面结合质量、组织成分和硬度等进行分析研究。结果表明:在铜板预热温度440℃,锌液浇注温度420℃时,可以获得厚度约为8μm、冶金结合良好的复合界面,此时界面层抗拉强度大于40.86MPa,超过铸态锌基体的抗拉强度;随着锌液浇注温度的升高,界面层厚度增加,抗拉强度降低,界面层生成的金属间化合物(CuZn)增多;界面层硬度显著高于基体硬度。     

铜钢异质复合材料连接特性的分析

用真空熔铸法制备45/T2、304/T2复合材料,用金相观察、扫描电镜及能谱分析、X射线衍射、力学性能测试等手段研究了钢铜复合界面的结合强度、显微组织、显微硬度、界相区的成分变化等。结果表明:钢铜基体中的Fe、Cr、Cu等合金元素在界面发生了相互扩散,形成了新的铁碳化合物(CFe15.1)和固溶体Cu0.81Ni0.19、Cr-Ni-Fe-C相。在界面上有齿状的过渡带,未出现明显的金属间化合物,其显微硬度最大值为183/119 HV,宽度约为60-70μm。钢铜复合材料的抗拉、抗剪强度分别278/263 MPa、217/201 MPa,拉伸断口均出现在T2铜侧,远离界面扩散区域;界面结合机制均为扩散冶金结合,强度高于纯铜的抗拉/抗剪强度;在(1150±50℃、4.0×10-2Pa)条件下,与Cr、Ni等合金元素相比,Fe在Cu液中的扩散能力最强,而Cu对改善304/45钢的基体稳定性和强度也有重要的作用。     

Microstructure and properties os steelAl-Pb composite bearing plate prepared by spray forming and rolling

采用喷射轧制工艺制备了钢/Al-8.5Pb-4Si-Cu-0.5Sn复合轴瓦带材，分析了所制备材料的组织及性能。结果表明，喷射轧制工艺制备的轴瓦合金Al-Si基体中具有均匀细小的Pb相粒子分布，经过50%变形量的轧制及320℃，5小时的后续退火处理，复合轴瓦带材的界面处发生了合金元素的扩散，形成了良好的冶金结合层，界面强度高，剪切强度可以达到72MPa，制备的轴瓦合金耐磨性能良好。     

铜/钢爆炸焊接头界面组织及力学性能研究

为了揭示铜/钢爆炸焊接的结合机理,采用光学显微镜(OM)、扫描电子显微镜(SEM)和纳米压痕仪等对T2纯铜/Q245钢爆炸焊接头结合界面组织和微力学性能进行了分析.结果表明:T2纯铜/Q245钢爆炸复合板结合界面呈现较规则的正弦波形,界面结合良好,界面处原子发生强烈扩散,形成了过饱和铜钢固溶体;界面不同区域固溶体微力学性能不同,纳米硬度在2.02~3.08 GPa,弹性模量在129.6~172.1 GPa;由界面弹性模量分布云图可知,固溶体层连续分布在界面上,由于界面原子扩散程度不同,部分区域的固溶体层厚度很薄,在光镜下很难识别,而在波峰处固溶体则比较明显.固溶体的弹性模量均比铜基体的大,其原子键合强度强于铜基体原子,在一定程度上增强了界面的结合强度,从而使界面的结合强度高于铜基体;爆炸焊接头的拉剪试验断裂位置均位于铜侧,也证实了界面结合强度高于铜基体的强度。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Tc trend in high-Tc superconductors

In our previous works, we have shown that most existing ceramic superconductors can be considered to be built of superconductor-semiconductor composite and we have estimated the change in phonon spectrum of the intrinsic superconductor unit if a semiconductor unit is attached to it. Moreover, the proximity effect under the size quantization condition has been examined in the superconductor-semiconductor composite. Each of the stated effects by itself could causeT _c enhancement in general as more semiconductor blocks are added to the system. We extend our study in this paper to analyze the combined actions of phonon spectral change and proximity effect without size quantization condition onT _c variation in members of the Tl₁ series of high-T _c superconductors. Our results indicate that an optimumT _c is obtained if the stated effects are included in the idealized unit cells of the superconductors made up of a superconductor-semiconductor array.     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.