xPb(Y_(1/2)Nb_(1/2))O_3-(1-x)Pb(Zr_(1/2)Ti_(1/2))O_3铁电陶瓷性能研究

系统地研究了 x Pb(Y1 / 2 Nb1 / 2 ) O3- (1- x) Pb(Zr1 / 2 Ti1 / 2 ) O3三元系铁电陶瓷材料 ,测量并计算了不同组分时的压电常数 (d33 )、介电常数 (εT3 3/ ε0 )、机电耦合系数 (kp、k31 )、以及弹性柔顺系数 (s E1 1 、s E1 2 、s E3 3 ) ,对 0 .0 7Pb(Y1 / 2Nb1 / 2 ) O3- 0 .93Pb(Zr1 / 2 Ti1 / 2 ) O3材料 ,d33 为 32 7× 10 - 1 2 C/ N,介电常数 εT3 3/ ε0 为 135 0 ,机电耦合系数 kp 大于 0 .6 ,弹性常数 SE1 1 和 SE3 3 均大于 17× 10 - 1 2 m2 / N。实现发现 ,当 x大于 0 .5 5时 ,x Pb(Y1 / 2 Nb1 / 2 ) O3- (1- x) Pb(Zr1 / 2 Ti1 / 2 ) O3不再是铁电材料     

Er3+掺杂对PbF2·SiO2玻璃陶瓷晶粒结构的影响

玻璃陶瓷是玻璃相通过部分晶化而得,是玻璃和晶体的复合体;通过控制晶化过程,可得到透明的玻璃陶瓷。稀土掺杂的透明玻璃陶瓷是一种很有前途的发光材料。本文报道Er3+掺杂对PbF2·SiO2透明玻璃陶瓷晶粒结构的影响。用Pb(AC)2·3H2O、Er(AC)3、TFA、TEOS等为原料,CH3COOH为水解催化剂,采用溶胶-凝胶法及后续热处理[1、2]制备出了xErF3-5PbF2-95SiO2(mol%,x=0,0·5)透明玻璃陶瓷。用JEM-2010型透射电镜(TEM)观察两种样品的显微结构。未掺杂Er3+(x=0)样品的TEM形貌像及其选区电子衍射如图1所示。电子衍射分析表明图中黑色球状…     

水热法制备锆钛酸铅纳米粉体的研究进展

论述了水热法制备Pb(TixZr1–x)O3纳米粉体技术的研究进展,初步分析了水热制备Pb(TixZr1x)O3纳米粉体的溶解–沉淀(dissolution-precipitation)和原位转变(in-situ)两种反应机理及其优缺点。通过研究得出,采用水热法可以在较低温度下(160℃)实现Pb(TixZr1x)O3 四方相纳米粉晶体的合成,其粉体分散性好,颗粒细小,粒径为0.5~2 mm。     

Sr_xPb_(1-x)TiO_3基陶瓷材料热敏特性研究

以 Srx Pb1 - x Ti O3为基料 ,液相掺杂一定量的 Y和 Si,采用传统固相合成工艺方法制备出了具有明显 V型阻温特性的半导体热敏电阻 ,通过扫描电镜形貌观察、R- T特性测试及复阻抗分析表明 ,Srx Pb1 - x Ti O3陶瓷的阻温特性明显受半导化程度的影响 ,居里点以下的 NTC效应往往随着半导化程度的提高而降低。掺杂玻璃相物质Si(OC2 H5 ) 4能增强 Srx Pb1 - x Ti O3陶瓷 NTC效应 (t相似文献   

激光加热基座生长晶体技术的新进展

介绍了激光加热基座生长晶体技术(LHPG)的特色和最新进展.具体表现在:1) 所生长晶体的尺寸大幅度提高,横截面直径由0.5 mm左右提高到2.5 mm.运用该项技术,成功地进行了人工蓝宝石晶体的生长,并应用于装饰性人工宝石的生产过程中.对直径大于1.0 mm的铁电晶体,已可以系统测量其介电、压电、热释电、热膨胀性质以及电滞回线.2) 通过对LHPG生长装置的改进,使晶体生长的速度大幅提高.莫来石晶体的生长速度可达150 mm/小时.3) 通过对陶瓷源棒组分的调整和对生长温度、气氛的控制,成功地生长出了含有铅元素的晶体PSKNN和PMN-PT,使该方法在开发新型高性能压电换能器和电光器件方面将发挥重要作用.4) 实现了几种晶体共生于一体的共晶型晶体的生长,如微波介电材料MgTiO3-CaTiO3,大大拓宽了该方法的应用领域.5) 成功地生长出Ba(Mg1/3Ta2/3)O3晶体,使晶体生长温度提高到3100°C.(OH9)     

GdCOB:Eu~(3+)晶体的生长及其光谱性能研究

生长了新型激光晶体 Gd Ca4O( BO3) 3:Eu3+ (简称 Gd COB:Eu3+ ) ,测量了室温透过谱。确定了室温下 Eu3+ 在 Gd COB晶体中的能级结构。在 46 5 nm的 Ar3+ 离子激光泵浦下 ,测量了晶体 5 D0 → 7F1 ,2 跃迁和 5 D1 → 7F0 ,1 ,2 跃迁的荧光发射 ,揭示了晶体内部的多声子弛豫机制和能级跃迁途径     

激光二极管抽运的Yb∶GSO连续锁模激光

作为发射在1μm波段的二极管抽运全固态激光器的增益介质,掺Yb离子的晶体备受关注。掺Yb晶体具有能级结构简单,量子缺陷低(<0·1),量子效率高等优点。目前成功使用掺Yb的晶体作为增益介质的飞秒激光振荡器已有很多报道,如Yb∶BOYS[1],Yb∶KYW[2],Yb∶SYS[3]等。激光材料的发射谱带越宽,愈容易实现宽调谐和高功率超快激光的输出。Yb离子占据基质中低对称性的格位或多种格位,非常有利于吸收和发射光谱的宽化。实验中采用中国科学院上海光学精密机械研究所研制生长的Yb∶Gd2Si O5(Yb∶GSO)晶体。Yb∶GSO晶体垂直切割、双面镀940~98…     

(Bi,Pb)2Sr2CaCu2O8薄膜的激光感生电压效应

采用紫外脉冲激光沉积技术和高低温沉积工艺,在LaAlO3(100)平衬底及倾斜衬底上成功制备了c轴取向的(Bi,Pb)2Sr2CaCu2O8[(Bi,Pb)-2212]薄膜;研究了在倾斜LaAlO3(100)单晶衬底上生长的(Bi,Pb)-2212薄膜激光感生热电电压信号与沉积条件及入射激光能量的关系。为避免(Bi,Pb)-2212薄膜被激光剥蚀或蒸发,还初步研究了MgO保护层对(Bi,Pb)-2212薄膜激光感生电压信号的作用,结果表明MgO层能够显著增强激光感生热电电压效应。     

上海交通大学1981年电工与计算机系各学科研究生入学试题 试题名称:计算机原理

1.用原码二位乘法求[x·y]_原 (a)x=101101,y=-100111; (b)x=110100,y=111010。[5分] 2.已知:[x]_补=x_0x_1x_2…x_n, 求证:[x/2]_补=x_0x_0x_1x_2…x_(n-1) [5分] 3.试具体写出执行浮点加法指令的操作步骤及控制序列。[10分] 4.给出下列DJS-183程序     

xPb（Y1／2Nb1／2）O3—（1—x）Pb（Zr1／2Ti1／2）O3铁电陶瓷性能研究

系统地研究了xPb(Y1/2Nb1/2)O3-(1-x)Pb(Zr1/2Ti/2)O3三元系铁电陶瓷材料,测量并计算了不同组分时的压电常数(d33)、介电常数(εT33/ε0)、机电耦合系数(kp、k31)、以及弹性柔顺系数(sK11、sE12、sK33),对0.07Pb(Y1/2Nb1/2)O3-0.93Pb(Z[1/2Ti1/2)O3材料,D33为327×10-12C/N,介电常数εT33/ε0为1350,机电耦合系数kp大于0.6,弹性常数SE11和SE33均大于17×10-12m2/N.实现发现,当x大于0.55时,xPb(Y1/2Nb1/2)O3-(1-x)Pb(Zr1/2T11/2)O3不再是铁电材料.     

准同型相界附近PMN-PT陶瓷的介电性能

采用铌铁矿预产物合成法制备了组成在相界附近的(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3(PMN-PT)弛豫铁电陶瓷。陶瓷样品X-射线衍射相组成和相结构分析表明:所有陶瓷样品均为纯钙钛矿相,无任何其他杂相出现;且组成在x=0.33处存在一准同型相界(MPB),在该相界附近三方相和四方相共存,而远离该相界则分别为纯三方相和四方相。相界附近组成随PT摩尔分数增加,介电峰变得尖锐,频率弥散减弱,即介电弛豫程度减弱。这主要是由于四方相增多,三方相减少,从而使弛豫铁电体变为正常铁电体。     

准同型相界附近PMN-PT材料的制备和性能

对铁电菱方(FR)-铁电四方(FT)准同型相界附近的铌镁酸铅(PMN)-钛酸铅(PT)材料制备方法和介电、压电和热释电性能进行了系统的研究：     

Critical Property in Relaxor-PbTiO(3) Single Crystals --- Shear Piezoelectric Response

The shear piezoelectric behavior in relaxor-PbTiO(3) (PT) single crystals is investigated in regard to crystal phase. High levels of shear piezoelectric activity, d(15) or d(24) >2000 pC N(-1), has been observed for single domain rhombohedral (R), orthorhombic (O) and tetragonal (T) relaxor-PT crystals. The high piezoelectric response is attributed to a flattening of the Gibbs free energy at compositions proximate to the morphotropic phase boundaries, where the polarization rotation is easy with applying perpendicular electric field. The shear piezoelectric behavior of pervoskite ferroelectric crystals was discussed with respect to ferroelectric-ferroelectric phase transitions and dc bias field using phenomenological approach. The relationship between single domain shear piezoelectric response and piezoelectric activities in domain engineered configurations were given in this paper. From an application viewpoint, the temperature and ac field drive stability for shear piezoelectric responses are investigated. A temperature independent shear piezoelectric response (d(24), in the range of -50°C to O-T phase transition temperature) is thermodynamically expected and experimentally confirmed in orthorhombic relaxor-PT crystals; relatively high ac field drive stability (5 kV cm(-1)) is obtained in manganese modified relaxor-PT crystals. For all thickness shear vibration modes, the mechanical quality factor Qs are less than 50, corresponding to the facilitated polarization rotation.     

Preparation and Property of PMN-PT Material near the Morphotropic Phase Boundary

It is difficult to obtain the（1-x）Pb（Mg1/3Nb2/3）O3 - x PbTiO3 material with pure perovskite phase. The chemical activity of PbO and Nb2O5 is much higher than that of MgO. It results in that pyrochlore phases are easily formed. Performances of（1-x）Pb（Mg1/3Nb2/3）O3 - x PbTiO3 solid solution are damaged when pyrochlore phases exist. A two-step columbite method was utilized for preparation of PMN-PT solid solution with single-phase perovskite. Pyrochlore phases were not observed…     

原位(TiB+TiC)/Ti复合材料中TiB/Ti界面的微结构研究

本文利用透射电镜（TEM）和高分辨透射电镜（HRTEM）研究了利用钛与碳化硼之间的自蔓燃高温合成反应,经普通的熔炼工艺制备的（TiB TiC)/Ti复合材料中TiB晶须与钛界面的微观组织结构。结果发现：界面非常洁净,两侧晶体存在如下平行关系：[010]TiB//[011^-0]Ti,(100)TiB//(2^-110)Ti,(001)TiB//(0002)Ti和[001]TiB//[011^-0]Ti,(010)TiB//(2^-110)Ti,(200)TiB//(0002)Ti。利用凝固理论分析了TiB/Ti界面微结构的形成机制,较好地解释了原位（TiB TiC)/Ti复合材料中TiB/Ti界面结合较好的原因。     

铟镓氮薄膜的光电特性

用金属有机物气相外延设备,在氮化镓/蓝宝石复合衬底上快速外延生长铟镓氮薄膜,并对其进行了X射线三晶衍射、光致发光、反射光谱及霍尔测量等实验测试.确定该薄膜为单晶,其中In组分可以从0增加到0.26;在光致激发下发光光谱为单峰,且峰值波长在360～555nm范围内可调;其发光机理被证实为膜内载流子经带隙跃迁而直接复合;并具有很高的电子浓度.但InGaN薄膜的结晶质量却随着In含量的增加而变差.     

Piezoelectric Study of 0.65Pb（Mg1/3,Nb2/3）O3-0.35PTO3 Nanopoder Ceramics

The piezoelectric properties of relaxor ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 ceramic prepared by a sol-gel combustion method have been investigated as function of sintering temperature.The results show that its phase structure is near the morphoteropic phase boundary(MPB),and outstanding electrical properties are obtained with this composition.The highest piezoelectric coefficients were observed for the samples sintered at temperature of 1200oC.In comparison with pure PMN((1-x)Pb(Mg1/3Nb2/3)O3-(x)P...     

Preparations and properties of low loss Sr1−xBaxNb2O6 ferroelectric single crystals

The growth parameters and ferroelectric properties of SBN and lead-modified SBN single crystals grown by the Czochralski method have been investigated. All crystals were grown in the [001] direction in air. It was observed that the degree of difficulty of growth increased as the diameter and Ba content of the crystal increased. Crack-free single crystals ~ 1. cm in diameter have been grown. The temperature dependence of pyroelectric properties have been studied. Poled SBN (x=0.5) with the very low loss factor of 0.003 has been obtained. High detectivity pyroelectric infrared detectors have been made from these low loss crystals.     

Engineering of Self‐Assembled Domain Architectures with Ultra‐high Piezoelectric Response in Epitaxial Ferroelectric Films

Substrate clamping and inter‐domain pinning limit movement of non‐180° domain walls in ferroelectric epitaxial films thereby reducing the resulting piezoelectric response of ferroelectric layers. Our theoretical calculations and experimental studies of the epitaxial PbZr_xTi_1–xO₃ films grown on single crystal SrTiO₃ demonstrate that for film compositions near the morphotropic phase boundary it is possible to obtain mobile two‐domain architectures by selecting the appropriate substrate orientation. Transmission electron microscopy, X‐ray diffraction analysis, and piezoelectric force microscopy revealed that the PbZr_0.52Ti_0.48O₃ films grown on (101) SrTiO₃ substrates feature self‐assembled two‐domain structures, consisting of two tetragonal domain variants. For these films, the low‐field piezoelectric coefficient measured in the direction normal to the film surface (d₃₃) is 200 pm V^–1, which agrees well with the theoretical predictions. Under external AC electric fields of about 30 kV cm^–1, the (101) films exhibit reversible longitudinal strains as high as 0.35 %, which correspond to the effective piezoelectric coefficients in the order of 1000 pm V^–1 and can be explained by elastic softening of the PbZr_xTi_1–xO₃ ferroelectrics near the morphotropic phase boundary.     

高温溶液法生长PZN-9PT弛豫铁电晶体

采用高温溶液法制备了PZN-9PT晶体,研究了晶体相结构、生长形态,表征了其介电、压电和电滞回线等部分电学性能。结果表明,采用高温溶液法可制备出纯钙钛矿结构的PZN-9PT单晶,晶体呈淡黄色多面体形态,晶粒表面的台阶均为直形生长台阶;其三方-四方相转变温度为89℃,居里温度为175℃;[221]切型PZN-9PT单晶的压电常数为230 pC/N,矫顽场为8.8 kV/cm。