半导体激光器在微场加热电子变温调制中的增益开关效应

本文从理论上得出半导体激光器中晶格和空穴温度保持室温不变，但电子因受微波场加热而变温时，光增益的变化，并与晶格、空穴和电子温度一起变化时的结果作比较，据化分析了电子温度单独变化对半导体激光器静态行为的影响，指出新提出的微波场加热电子变温调制过程的物理机制与通常电流调制过程的根本区别。     

半导体激光器在微波场加热电子变温调制中的增益开关效应

本文从理论上得出半导体激光器中晶格和空穴温度保持室温不变，但电子因受微波场加热而变温时，光增益的变化，并与晶格、空穴和电子温度一起变化时的结果作比较．据此分析了电子温度单独变化对半导体激光器静态行为的影响，指出新提出的微波场加热电子变温调制过程的物理机制与通常电流调制过程的根本区别．     

InAs/GaSb Ⅱ型超晶格的拉曼和光致发光光谱

采用分子束外延(MBE)技术,在GaSb(100)衬底上外延生长晶体结构完整和表面平整的Ⅱ型超晶格InAs(1.2 am)/GaSb(2.4 am).拉曼光谱表明:随着温度从70 K升高至室温,由于热膨胀作用和光声子散射过程中的衰减,超晶格纵光学声子拉曼频移向低波数方向移动5 cm-4,频移温度系数约为0.023 cm-1/K.光致发光(PL)峰在2.4～2.8 μm,由带间辐射复合和束缚激子复合构成,2.55 μm PL峰随温度变化(15～150 K)发生微小红移,超晶格中InAs电子带与GaSb空穴带带间距随温度变化比体材料的禁带宽度小.PL发光强度在15～50 K随温度升高而升高,在60～150 K则相反,并在不同温度段表现出不同的温度依赖关系.     

ZnSe-ZnTe应变层超晶格的Raman光谱研究

本文报道室温下的Ⅱ-Ⅵ族宽禁带半导体化合物 ZuSe-ZnTe应变层超晶格的 Raman光谱,得到纵光学声子频移和超晶格结构参数的关系.当超晶格每层厚度大于40A时,纵光学声子模频移随层厚变化不明显,基本稳定在一定值;当层厚小于40A时,纵光学声子模频率随层厚减小而相对其体材料值的变化越来越大,并且应力效应引起的频移比限制效应引起的红移要大得多.ZnSe纵光学声子模频率随层厚减小向低波数移动,ZnTe纵光学声子模频率向高波数移动.从Raman光谱估计这种应变层超晶格的临界厚度约为40A.     

(GaAs)_(1-x)Ge_(2x)半导体合金材料的电子结构及其基态性质

本文根据闪锌矿-金刚石结构的有序-无序相变模型,引入序参量M,在改进的虚晶格近似下,利用从第一性原理出发的自治LMTO-ASA方法,研究了(GaAs)_(1-x)Ge_(2x)半导体合金的电子结构和基态性质.计算结果与现有的非自治计算结果和实验结果进行了比较.计算表明,合金材料中轻、重空穴有效质量依赖于合金的有序度.计算也表明合金材料的晶格常数和体弹性模量将随组份x变化而呈现类似“V”形变化.这都说明,在有序和无序的组份区域,合金性质随组份的变化规律是不同的,应分区描述.     

超荧光的晶格模型与辐射速率

我们根据超荧光的晶格模型,利用双粒子Green函数计算超荧光的辐射速率,进而得出超荧光时间τ_R,这和目前人们所定义的超荧光时间相符合。     

反应溅射生长的a-Si:H/a-Ge:H超晶格光学性质研究

本文报道了反应溅射法制备的a-Si:H/a-Ge:H超晶格结构特性.小角度X射线衍射测量和透射电子显微镜观察表明:超晶格层厚均匀、层间平行、界面处组分突变、周期性良好;喇曼散射、光吸收和红外透射表明:在超晶格中并不存在由于超晶格结构引起的界面结构无序,界面无H富集现象.     

Te掺杂的GaSb材料载流子特性研究

非故意掺杂的GaSb材料呈现p型导电,限制了GaSb材料在InAs/GaSb超晶格红外探测器等领域的应用。探究N型GaSb薄膜电学特性对估算超晶格载流子浓度以及制备超晶格衬底、缓冲层、电极接触层等提供了一定的理论依据。Te掺杂能够以抑制GaSb本征缺陷的方式实现N型GaSb薄膜的制备,利用分子束外延(Molecular Beam Epitaxy,MBE)技术,设置GaTe源温分别为420℃、450℃、480℃,分别在GaSb衬底与GaAs衬底上生长不同GaTe源温度下掺杂的GaSb薄膜,通过霍尔测试探究GaSb薄膜的电学特性。在77 K的霍尔测试中,发现在GaAs衬底上生长的GaSb薄膜均显示为N型半导体,载流子浓度随源温升高而增加。与非故意掺杂的GaSb相比,源温为420℃、450℃时由于载流子浓度增加而导致的杂质散射,迁移率大幅提高,且随温度升高而增加,但在480℃时,由于缺陷密度减小,迁移率大大减小。在GaSb衬底上生长7000  Be掺杂的GaSb缓冲层,再生长5000  Te掺杂的GaSb薄膜。结果发现,由于P型缓冲层的存在,当源温为420℃时,薄膜显示为P型半导体,空穴载流子的存在导致薄膜整体载流子浓度增加,且空穴和电子的补偿作用使迁移率大幅降低。源温为450℃、480℃时,薄膜仍为N型半导体,载流子浓度随温度增加,且为GaAs衬底上生长的GaSb薄膜载流子浓度的2～3倍;迁移率在450℃时最高,480℃时减小。设置GaTe源温为450℃时GaSb薄膜的载流子浓度较高且迁移率较高,参与超晶格材料的制备能够使整个材料的效果最佳。     

半导体纳米材料光学吸收谱的温度效应

观测了半导体纳米薄膜材料,在室温下的紫外-可见吸收光谱及随测量温度变化至液氦温区的光谱变化,考察光吸收边随温度降低发生蓝移的情况,进而分析温度效应对晶格参数及电子-声子相互作用的影响,造成其能带漂移.     

Zn0.95-xBe0.05MnxSe稀磁半导体的光谱特性分析

为了研究稀磁半导体Zn0.95-xBe0.05MnxSe (x分别为0.05,0.10,0.15,0.20)随温度变化的光学特性,采用电场调制反射光谱、表面光电压光谱及光激发荧光光谱等测量技术,进行了理论分析与实验验证,取得了一系列数据。结果表明,除x=0.1的样品外,其它样品的能隙会随Mn掺杂摩尔分数的增加而增大,这是由价带和导电中的电子和Mn中的d层电子彼此交换的相互作用产生的微小位移所致;温度升高时跃迁信号会向低能量方向移动,则是晶格-声子散射效应增加所致。     

Time—resolved Photoluminescence Spectra of Nominally Disordered GaInP Alloy

Luminescence decay and time-resolved photoluminescence(TRPL) spectra are used for study on the transient luminescence process of the nominally disordered GaInP alloy.The luminescence decay of GaInP alloy shows the temperature and excitation-intensity dependent characters.At 77K and under high excitation intensity, the luminescence decay shows single exponential time dependence, while under low excitation intensity or at 300 K, the luminescence decay shows double exponential time dependence.The analysis indicated that this nominally disordered GaInP alloy actually exhibits a very weak degree of order.The blue-shift of PL peak is observed in the TRPL spectra at 77 K, which is derived from the transfer of the carriers from the ordered domain to the disordered region of the alloy.At 300 K, due to the thermal quenching, the transfer is too weak to be observed.However,The recombination of the carriers between the ordered domain and the disordered region is still devoted to luminesce.     

InAs/GaSb应变超晶格红外调制光谱研究

在用步进扫描傅里叶变换红外(Fourier Transform Infrared, FTIR)调制光致发光(Photoluminescence, PL)光谱仪进行测试时,基于FTIR的优势,并结合PL无损、灵敏度高、简单的优点,通过减弱背景干扰来提高信号强度。研究了背景噪声、杂质能级和温度对InAs/GaSb应变超晶格材料的发射峰强度及位置的影响,并通过改变测试参数,总结出了针对不同材料的测试方法。这项研究结果对InAs/GaSb应变超晶格材料的外延生长及后续加工具有参考价值。     

三元合金Ga_(0.52)In_(0.48)P的时间分辨发光谱

在室温和低温液氮下 ,研究了有序和无序 Ga0 .52 In0 .4 8P的时间分辨发光谱。对实验结果的拟合表明 ,有序 Ga0 .52 In0 .4 8P的发光呈双指数规律衰退。其中快过程对应着有序区域上载流子的复合 ,慢过程则对应着有序区域和无序区域的空间分离中心上载流子的复合。无序 Ga0 .52 In0 .4 8P的发光在室温下呈单指数规律衰退。同时从低温下的时间分辨发光谱还可以看出有序样品的发光峰随着延迟时间的变长而蓝移 ,说明低温下在有序 Ga0 .52In0 .4 8P中存在着载流子从无序区域到有序区域的转移     

Aggregate States and Energetic Disorder in Highly Ordered Nanostructures of para‐Sexiphenyl Grown by Hot Wall Epitaxy

We report on photoluminescence (PL) and thermally stimulated luminescence (TSL) in highly ordered nanostructures of para‐sexiphenyl (PSP) grown by hot wall epitaxy (HWE). A low‐energy broad band is observed in the PL spectra that can be attributed to the emission from molecular aggregates. While the intrinsic exciton emission in steady‐state PL dominates at low temperatures, the emission from aggregates increases with elevating temperature and its magnitude depends sensitively on film preparation conditions. Time‐resolved PL measurements showed that the aggregate emission decays with a life‐time of ≈ 4 ns, which is approximately an order of magnitude larger than the lifetime of singlet excitons. TSL data suggests the presence of an energetically disordered distribution of localized states for charge carriers in PSP films, which results from an intrinsic disorder in this material. A low‐temperature TSL peak with the maximum at around 30 K evidences for a weak energy disorder in PSP films, and has been interpreted in terms of a hopping model of TSL in disordered organic materials.     

Photoluminescence Spectra of Disordered and Ordered Ga 0.52 In 0.48 P

Temperature-dependence and excitation-intensity-dependence of photoluminescence spectra for both disordered and ordered Ga0.52 In0.48P are measured.The disordered sample is charactierized by its single pcak photoluminescence spectrum which is excitation-intensity.independent and has different activation energy at different temperature region.The ordered sample shows double peaks,the intensity of the high-energy peak has an anomalous increase firstly and quenches afterwards.The relative henomena are reasonably explained in terms of lattice ordering and orientation superlattice model.     

Localization of excited carriers in organometallic vapor-phase epitaxial grown Zn<Subscript>x</Subscript>Cd<Subscript>1−x</Subscript>Se epilayers with partial existence of lateral compositionally modulated superlattice

The structural and optical properties of organometallic vapor-phase epitaxial (OMVPE) grown Zn_xCd_1−xSe epilayers on the (001) InP substrate were studied by transmission electron microscopy (TEM) and photoluminescence (PL). The TEM results showed the spontaneous formation of compositionally modulated (CM) superlattices along the [110] direction with a period of ∼10–20 nm at some places in the epilayer. In the PL measurements, we found an anomalous red shift of PL with a decrease in temperature (from 170 K to 100 K) and a large blue shift up to 40 meV with an increase in excitation power. We suggested that the anomalous red shift of PL is caused by a localization of photo-excited carriers from places containing a normal random alloy to places containing a CM superlattice, which has a narrower bandgap, and the large blue shift is caused by a saturation of energy states in the CM superlattice under high excitation. The narrower bandgap of the CM superlattice is supported by a polarized PL study, where the low energy part of PL is strongly polarized along the [ ] direction, is consistent with the reduced symmetry of a CM superlattice. A two-level model was proposed to quantitatively account for the experimental observations.     

Ion beam mixing characteristics of MOCVD grown InGaAs/GaAs superlattices

The ion beam mixing behavior of InGaAs/GaAs strained layer superlattice structures grown by metalorganic chemical vapor deposition was studied using secondary ion mass spectroscopy and Rutherford backscattering channeling. The fluence dependence of intermixing by MeV Kr⁺ irradiation has been investigated. Significant intermixing occurs for fluences much lower than for similar intermixing in other superlattice systems (i.e. ALAs/GaAs). The intermixing exhibits no temperature dependence for fluences of 2 x 10¹⁵ to 5 x 10¹⁵ cm⁻² which sharply contrasts with the behavior of the AlAs/GaAs superlattice system which shows a strong temperature dependence, including a miscibility gap, in the temperature range 523 to 973K. Samples irradiated at 573K retain a high degree of crystallinity when compared to lower temperature irradiations indicating that the InGaAs/GaAs superlattice can be disordered and still retain crystallinity.     

Modeling of the photoluminescence in multiquantum-wellheterostructure laser wafers

We have performed numerical analysis of the electro- and photoluminescence (PL) of a wafer which would have been used in the manufacture of a multiquantum-well 1.5 μm InGaAsP-InP-based semiconductor laser diode. It is shown that the deviation of the carrier distribution from a quasi-Boltzmann distribution plays a very important role in the interpretation of PL data. This is dramatically illustrated in the analysis of PL under short circuit conditions. Under this condition, the usual analytical theory predicts no PL, while our calculations agree with our experimental results in which PL is observed. For a wafer with electrical contacts, our calculations show that an increase in the positive applied voltage decreases the PL threshold and that the PL intensity saturates at large pump powers. Both these observations are consistent with the PL experiments. Moreover, our analysis shows that, in addition to the PL spreading effect, a non-Boltzmann carrier distribution is another important factor in determining the threshold of PL intensity     

Electron ensemble coherence and terahertz radiation amplification in a cascade superlattice structure

We report on an ensemble Monte Carlo study of the electron dynamics in a biased GaAs/AlGaAs cascade superlattice structure with domains of a strong electric field. We simulate the electron transport in a single superlattice, serving as an active region of the structure, and verify Kroemer's criterion which specifies over which distance in a superlattice a stable domain forms. We show that at room temperature in a superlattice with electrons subject to scattering at optical and acoustic phonons, the deviation of the superlattice length critical for domain development from that which is determined by Esaki–Tsu formula, varies from 10% to 300%. In a superlattice with the length larger than the critical one due to the electric field non-homogeneity, an electron ensemble becomes incoherent and its interaction with a terahertz field causes only the damping of the latter.     

Effect of Ligand Exchange on the Photoluminescence Properties of Cu-Doped Zn-In-Se Quantum Dots

The surface-bound ligands of a semiconductor nanocrystal can affect its electron transition behavior. We investigate the photoluminescence (PL) properties of Cu-doped Zn-In-Se quantum dots (QDs) through the exchange of oleylamine with 6-mercaptohexanol (MCH). Fourier transform infrared and ¹H nuclear magnetic resonance spectroscopies, and mass spectrometry reveal that the short-chain MCH molecules are bound to the QD surface. The emission peaks remain unchanged after ligand exchange, and the PL quantum yield is reduced from 49% to 38%. The effects of particle size and defect type on the change in PL behavior upon ligand substitution are excluded through high-resolution transmission electron microscopy, UV–Vis absorption, and PL spectroscopies. The origin of the decreased PL intensity is associated with increased ligand density and the stronger ligand electron-donating abilities of MCH-capped QDs that induce an increase in the nonradiative transition probability. A lower PL quenching transition temperature is observed for MCH-capped QDs and is associated with increasing electron-acoustic phonon coupling due to the lower melting temperature of MCH.