Influence of Deposition Parameters and Substrate on the Quality of Pulsed-Laser-Deposited Pb1-xCaxTiO3 Ferroelectric Films

Pb_{1- x} Ca _x TiO₃ (PCaT) thin films have been prepared by pulsed laser deposition (PLD) on Pt/TiO₂/SiO₂/(100)Si, (100)MgO, and Pt/(100)MgO substrates. A Pb deficiency with regard to the target composition occurs in films prepared on heated substrates, while the Ca concentration in the film remains congruent with the target composition. The onset temperature for the Pb loss changes from 250°C using nonsintered targets to 450°C if sintered targets are used; moreover, the sintered targets also produce a low particle density on the film surface (0.4 µm⁻²). Increasing the laser fluence to about 10 J/cm² improves the crystalline quality of the films. PCaT ( x = 0.24) films obtained by PLD on Si-based substrates have a lattice tetragonality c / a = 1.014, lower than the value obtained in films prepared by other methods. The film tetragonality can be slightly increased to c / a = 1.022 by using MgO substrates and much more efficiently by reducing the Ca concentration, up to reach c / a = 1.048 in Ca free films. The increase of the film tetragonality induces an enhancement of the film orientation with the [001] axis perpendicular to the substrate surface; moreover, the typical values of the spontaneous and remanent polarizations increase up to P _r similar/congruent 34 µCcm⁻².     

Highly Oriented, Chemically Prepared Pb(Zr, Ti)O3 Thin Films

We have fabricated highly oriented, chemically prepared thin films of Pb(Zr_0.04Tio._0.60)O₃ (PZT 40/60) on both insulating and conducting substrates. While (100) MgO single crystals were used as the insulating substrates, the conducting substrates. were fabricated by RF magnetron sputter deposition of 100-nm-thick (100) Pt films onto (100) MgO substrates. For comparison, we also fabricated PZT 40/60 films that had no significant preferential orientation on platinized MgO substrates. Sputter deposition of an underlying amorphous Pt film was used to fabricate randomly oriented PZT 40/60 films. Highly (001) oriented PZT 40/60 films had higher remanent polarization (61 μC/cm² compared to 41 μC/cm²) and lower relative dielectric constant (368 compared to 466) than PZT 40/60 films that were randomly oriented.     

Pb-Diffusion Barrier Layers for PbTiO3 Thin Films Deposited on Si Substrates by Metal Organic Chemical Vapor Deposition

The interfaces between metal organic chemical vapor deposited PbTiO₃ thin films and various diffusion barrier layers deposited on Si substrates were investigated by transmission electron microscopy. Several diffusion barrier thin films such as polycrystalline TiO₂, amorphous TiO₂, ZrO₂, and TiN were deposited between the PbTiO₃ thin film and Si substrate, because the deposition of PbTiO₃ thin films on bare Si substrates produced Pb silicate layers at the interface irrespective of the deposition conditions. The TiO₂ films were converted to PbTiO₃ by their reaction with diffused Pb and O ions during PbTiO₃ deposition at a gubstrate temperature of 410°C. Further diffusion of Pb and O induces formation of a Pb silicate layer at the interface. ZrO₂ did not seem to react with Pb and O during PbTiO₃ deposition at the same temperature, but the Pb and O ions that diffused through the ZrO₂ layer formed a Pb silicate layer between the ZrO₂ and Si substrate. The TiN films did not seem to react with Pb and O ions during the deposition of PbTiO₃ at 410°C, but reacted with PbTiO₃ to form a lead-deficient pyrochlore during postdeposition rapid thermal annealing at 700°C. However, TiN could effectively block the diffusion of Pb and O ions into the Si substrate and the formation of Pb silicate at the interface.     

Synthesis of Highly Oriented Lead Zirconate–Lead Titanate Film Using Metallo-organics

Crack-free Pb(Zr,Ti)O₃ (PZT) thin films with preferred orientation were prepared successfully on MgO (100), SrTiO₃ (100), and Pt/Ti/SiO₂/Si substrates from metal alkoxide solutions. Calcination of precursor films in a H₂O─-O₂ gas mixture was found to be effective not only for low-temperature crystallization of perovskite PZT, but also for obtaining the preferred orientation of PZT films. Single-phase PZT films with high preferred orientation were synthesized on MgO (100) and Pt/Ti/SiO₂/Si substrates at 550° and 600°C for 2 h, respectively. The PZT film on the Pt/Ti/SiO₂/Si substrate showed a permittivity of 520, tan δ of 0.03, a remanent polarization of 24 μC/cm², and a coercive field of 54 kV/cm.     

Preparation of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films Via a Polyvinylpyrrolidone-Assisted Aqueous Sol–Gel Process and Dielectric Properties

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) thin films were prepared by spin coating using aqueous solutions of metal salts containing polyvinylpyrrolidone, where niobium oxide layers and lead—magnesium–titanium oxide layers were laminated on Pt(111)/TiO _x /SiO₂/Si(100) substrates and fired at 750° or 800°C. 250 ± 20 nm thick 0.7PMN–0.3PT thin films of a single-phase perovskite could be prepared, and the film fired at 750°C had dielectric constants and dielectric loss of 1900 ± 350 and 0.13 ± 0.03, respectively, exhibiting polarization-electric field hysteresis with a remanent polarization of 5.1 μC/cm² and a coercive field of 21 kV/cm.     

Effects of Heating Profiles on the Orientation and Dielectric Properties of 0.5Pb(Mg1/3Nb2/3)O3-0.5PbTiO3 Thin Films by Chemical Solution Deposition

0.5Pb(Mg_1/3Nb_2/3)O₃-0.5PbTiO₃ thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by varying the film formation procedures and heating processes. Depending on the multilayer film formation and appropriate heating process, the films were grown with a preferential orientation. The films showed a (100)-preferred orientation and large grain-size distribution when they were directly heat-treated after deposition of amorphous layers. The films showed a (111)-preferred orientation and small grain-size distribution when formed layer-by-layer or directly heating amorphous thin films with a perovskite seed layer. These results were explained by the effect of a seed layer. Saturation polarization of the (111)-preferred films was ∼35 µC/cm², which was somewhat higher than that of the (100)-preferred film. In contrast, the dielectric constant of the (100)-preferred film was ∼1600, which was larger than that of the (111)-preferred film.     

Deposition of Pb(Zr,Ti)O3 Thin Films by Metal-Organic Chemical Vapor Deposition Using β-diketonate Precursors at Low Temperatures

Lead zirconate titanate (PZT) thin films were deposited by metal-organic chemical vapor deposition (MOCVD) using β-diketonate precursors and 0₂ at temperatures below 500°C on variously passivated Si substrates. PZT thin films could not be deposited on bare Si substrates, owing to a serious diffusion of Pb into the Si substrate during deposition. Pt/SiO₂/Si substrates could partially block the diffusion of Pb, but a direct deposition of PZT thin films on the Pt/SiO₂/Si substrates resulted in a very inhomogeneous deposition. A TiO₂ buffer layer deposited on Pt/SiO₂/Si substrates could partially suppress the diffusion of Pb and produce homogeneous thin films. However, the crystallinity of PZT thin films deposited on the TiO₂-buffered Pt/SiO₂/Si substrate was not good enough, and the films showed random growth direction. PZT thin films deposited on the PbTiO₃-buffered Pt/SiO₂/Si substrates had good crystallinity and a- and c-axis oriented growth direction. However, the PZT thin film deposited at 350°C showed fine amorphous phases at the grain boundaries, owing to the low chemical reactivities of the constituent elements at that temperature, but they could be crystallized by rapid thermal anneaiing (RTA) at 700°C. PZT thin film deposited on a 1000-å PbTiO₃,-thin-film-buffered Pt/SiO₂/Si substrate at 350°C and rapid thermally annealed at 700°C for 6 min showed a single-phase perovskite structure with a composition near the morphotropic boundary composition.     

Electrochemical Liquid Deposition of Ceria

Electrochemical liquid deposition (ELD) has been used to grow fully dense films of ceria on impervious gadolinia-doped ceria substrates of variable thickness. The process is similar to electrochemical vapor deposition (EVD) except that a liquid is used instead of a vapor to provide precursor material to the growing film. ELD film growth data have been analyzed in a manner similar to that for EVD demonstrated previously. Experimental results verify that the pertinent rate equation is obeyed phenomenologically. Rate constants for the film (CeO₂) and the substrate (l-l-mol%-Gd₂O₃-doped CeO₂) at 1200°C have been determined as K_f = 33.1 × 10⁻¹² m²/s and K^s = 51.6 × 10⁻¹² m²/s, respectively.     

Excimer Laser Crystallized (Pb,La)(Zr,Ti)O3 Thin Films

A KrF pulsed excimer laser (248 nm) was utilized to crystallize sputtered La-modified Pb(Zr,Ti)O₃ (3:30:70) (PLZT) films on LaNiO₃-coated silicon substrates. The film surface was irradiated with defocused laser pulses in an oxygen ambient at various substrate temperatures. Polycrystalline, phase pure perovskite PLZT thin films were produced for substrate temperatures of 250°C and higher. The dielectric constant and loss tangent values of laser-assisted crystallized (10 min exposure at 10 Hz using a substrate temperature of 400°C) PLZT thin films at 10 kHz were 406 and 0.027; in comparison, rapid thermal annealed films (annealed at 700°C for 1 min) showed values of 400 and 0.021, respectively. Laser crystallized films exhibited a remanent polarization value of 14 μC/cm² with a coercive field |( E _+c+ E _−c)|/2 of 95 kV/cm.     

Characterization of Photoluminescent (Y1–xEux)2O3 Thin Films Prepared by Metallorganic Chemical Vapor Deposition

The purpose of this study was to identify and correlate the microstructural and luminescence properties of europium-doped Y₂O₃ (Y_{1– x} Eu _x )₂O₃ thin films deposited by metallorganic chemical vapor deposition (MOCVD), as a function of deposition time and temperature. The influence of deposition parameters on the crystallite size and microstructural morphology were examined, as well as the influence of these parameters on the photoluminescence emission spectra. (Y_{1– x} Eu _x )₂O₃ thin films were deposited onto (111) silicon and (001) sapphire substrates by MOCVD. The films were grown by reacting yttrium and europium tris(2,2,6,6-tetramethyl–3,5-heptanedionate) precursors with an oxygen atmosphere at low pressures (5 torr (1.7 × 10³ Pa)) and low substrate temperatures (500°–700°C). The films deposited at 500°C were smooth and composed of nanocrystalline regions of cubic Y₂O₃, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600°C developed, with increasing deposition time, from a flat, nanocrystalline morphology into a platelike growth morphology with [111] orientation. Monoclinic (Y_{1– x} Eu _x )₂O₃ was observed in the photoluminescence emission spectra for all deposition temperatures. The increase in photoluminescence emission intensity with increasing postdeposition annealing temperature was attributed to the surface/grain boundary area-reduction effect.     

Multiferroic BiFeO3 Thin Films Buffered by a SrRuO3 Layer

Multiferroic BiFeO₃ thin films of huge polarization have been successfully realized by using SrRuO₃ as a buffer layer on a Pt/TiO₂/SiO₂/Si substrate. They consist of a single perovskite phase and are nearly randomly orientated, where the SrRuO₃ buffer layer lowers the crystallization temperature and improves the crystallinity of BiFeO₃. With increasing deposition temperature during magnetron sputtering, they undergo an apparent grain growth and reduction in surface roughness. The multiferroic thin films deposited on the SrRuO₃-buffered Pt/TiO₂/SiO₂/Si substrate at higher temperatures show much improved polarization and reduced coercive field, together with a lowered leakage current. A huge remnant polarization (2 P _r) of 150 μC/cm² and a coercive field (2 E _c) of 780 kV/cm were measured for the BiFeO₃ film deposited at 650°C.     

The Effect of Deposition Temperature and Postanneal on the Bi3.63Pr0.3Ti3O12 thin Films Prepared by RF-Magnetron Sputtering Method

Praseodymium doped Bi₄Ti₃O₁₂ (BTO) thin films with composition Bi_3.63Pr_0.3Ti₃O₁₂ (BPT) were successfully prepared on Pt/Ti/SiO₂/Si substrates by RF-magnetron sputtering method at substrate temperatures ranging between 500° and 750°C. The structural phase and orientation of the deposited films were investigated in order to understand the effect of the deposition temperature on the properties of the BPT films. As the substrate temperature was increased to 700°C, the films started showing a tendency of assuming a c -axis preferred orientation. At lower temperatures, however, polycrystalline films were formed. The Pt/BPT/Pt capacitor showed an interesting dependence of the remnant polarization (2 P _r) as well as dc leakage current values on the growth temperature. The film deposited at 650°C showed the largest 2 P _r of 29.6 μC/cm². With the increase of deposited temperature, the leakage current densities of films decreased at the same applied field and the film deposited at 750°C exhibited the best leakage current characteristics. In addition, the ferroelectric fatigue and Raman measurements were carried out on the as-prepared, postannealed in air and postannealed in oxygen BPT films. It was revealed that the BPT film postannealed in air exhibited the weakest fatigue-resistance characteristics and highest frequency shifted Raman vibration modes, indicating the highest oxygen vacancy concentration in this film.     

Synthesis of Lead Barium Niobate Powders and Thin Films by the Sol-Gel Method

Crack-free, dense, and transparent Pb_0.6Ba_0.4Nb₂O₆ (PBN60) thin films have been prepared by a sol-gel method with metal alkoxides and metal acetate. A homogeneous and stable precursor solution was obtained from Ba metal, Pb(CH₃COO)₂, and Nb(OEt)₅ in 2-methoxyethanol. PBN60 powder crystallized to the hexagonal phase at 600°C and then completely transformed to the orthorhombic phase of the tungsten bronze structure at 1250°C. The hexagonal phase was formed on SiO₂ glass, MgO(lOO), and sapphire(R) substrate at 600°C, while the orthorhombic phase was only on a sapphire(C) substrate. Orthorhombic PBN60 films with c -axis preferred orientation were successfully synthesized on sapphire(C) substrates at 600°C.     

Effects of Excess Bismuth Content in Precursor Solutions on Ferroelectric Properties of BiFeO3 Thin Films Prepared by a Chemical Solution Deposition

Cr-substituted BiFeO₃ (BFCr) thin films prepared from precursor solutions with stoichiometric composition and various excess Bi contents ranged from 5 to 20 mol% were fabricated on Pt/TiO₂/SiO₂/Si(100) substrates by a chemical solution deposition method, and the effects of excess Bi content in precursor solutions on the ferroelectric properties of the as-deposited BFCr thin films were studied. It was found that the BFCr thin film prepared from precursor solution with excess Bi content of 5 mol% exhibited the best dielectric constant-frequency and polarization-electric field characteristics. In detail, its dielectric constant is 158 at frequency of 100 kHz and remnant polarization (P_r) value is 49 μ C/cm² at electric field of 600 kV/cm.     

Processing Dependence of Texture, and Critical Properties of YBa2Cu3O7−δ Films on RABiTS Substrates by a Non-Fluorine MOD Method

YBa₂Cu₃O_{7− δ} (YBCO or Y123) films on rolling-assisted biaxially textured substrates (RABiTS) were prepared via a fluorine-free metallorganic deposition (MOD) through spin coating, burnout, and high temperature anneal. The effects of substrate texture and surface energy of the CeO₂ cap layer were investigated. Except for the commonly accepted key factors, such as the textures of substrate and buffer layers, we found some other factors, for example, the deposition temperature of the cap layer, are also critical to the epitaxial growth of Y123 phase. With the CeO₂ cap layer deposited at relative high temperature of 700°C, a critical current density, J _c, over 1 MA/cm² has been demonstrated for the first time on Ni-RABiTS by a fluorine-free MOD method. Whereas for samples with CeO₂ cap layers deposited at a lower temperature of 600°C, even though XRD data showed a better texture on these buffer layers, texture degradations of YBCO grains under the optimized processing conditions were observed and a lower oxygen partial pressure around 40 ppm was necessary for the epitaxial growth of Y123 phase. As a result, J _c fell to 0.45 MA/cm² at 77 K. The observed phenomena points to the change of surface energy and reactivity of the CeO₂ cap layer with respect to the CeO₂ deposition temperature. In this paper, the YBCO phase diagram was also summarized.     

Control of Microstructure and Orientation in Solution-Deposited BaTiO3 and SrTiO3 Thin Films

Columnar and highly oriented (100) BaTiO₃ and SrTiO₃ thin films were prepared by a chelate-type chemical solution deposition (CSD) process by manipulation of film deposition conditions and seeded growth techniques. Randomly oriented columnar films were prepared on platinum-coated Si substrates by a multilayering process in which nucleation of the perovskite phase was restricted to the substrate or underlying layers by control of layer thickness. The columnar films displayed improvements in dielectric constant and dielectric loss compared to the fine-grain equiaxed films that typically result from CSD methods. Highly oriented BaTiO₃ and SrTiO₃ thin films were fabricated on LaAlO₃ by a seeded growth process that appeared to follow a standard "two-step" growth mechanism that has been previously reported. The film transformation process involved the bulk nucleation of BaTiO₃ throughout the film, followed by the consumption of this matrix by an epitaxial overgrowth process originating at the seed layer. Both BaTiO₃ and PbTiO₃ seed layers were effective in promoting the growth of highly oriented (100) BaTiO₃ films. Based on the various processing factors that can influence thin film microstructure, the decomposition pathway involving the formation of BaCO₃ and TiO₂ appeared to dictate thin film microstructural evolution.     

Preparation of Strontium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal-Electrochemical Method

Polycrystalline SrTiO₃ thin films have been prepared on Timetal substrates by the hydrothermal-electrochemical method. The films were prepared at temperatures ranging from 100° to 200°C and under saturated vapor pressures in electrolytic solutions of 1 N to 5 N Sr(OH)₂. A galvanostat was used to apply a direct current of 5 to 25 mA/cm². The films had smooth and homogeneous surfaces without any visible pores or defects. The dielectric constant of the films was approximately 129 assuming 25 nm for film thickness.     

Sol—Gel Fabrication of Pb(Zr0.52 Ti0.48)O3 Thin Films Using Lead Acetylacetonate as the Lead Source

Lead zirconium titanate (PZT) thin films of the morphotropic phase boundary composition [Pb(Zr_0.52Ti_0.43)O₃] were deposited on platinum-coated silicon by a modified sol-gel process using lead acetylacetonate as the lead source. The precursor solution for spin coating was prepared from lead acetylacetonate, zirconium n -butoxide, and titanium isopropoxide. The use of lead acetylacetonate instead of the widely used lead acetate trihydrate provided more stability to the PZT precursor solution. Films annealed at 700°C for 12 min formed well-crystallized perovskite phase of Pb(Zr_0.52Ti_0.48)O₃. Microstructures of these films indicated the presence of submicrometer grains (0.1 to 0.2 μm). The dielectric constant and loss values of these films measured at 10 kHz were approximately 1200 and 0.04, respectively, while the remanent polarization and coercive field were ∼ 13 μC/cm² and ∼ 35 kV/cm. Aging of the solution had almost no effect on the dielectric and ferroelectric properties of these films.     

Sol-gel processed barium titanate thin films

Ferroelectric barium titanate (BaTiO₃) thin films have been prepared by sol-gel technique from barium acetate [Ba(CH₃COO)₂] and titanium (IV) isopropoxied [Ti(CH₃)₂CHO)₄] precursors. The as-grown films were found to be amorphous which crystallized to tetragonal phase after annealing at 700°C for one hour in air. The room temperautre dielectric constant (ε) and loss tangent (tanδ) of the films were found to be 370 and 0.02 respectively. The values of the spontaneous polarization (P_s), remanent polarization (P_r) and coercive field (E_c) of the films determined from the polarization-field (P-E) hysteresis were found to be 14.0, 3.2μC-cm^-2 and 53KV-cm^-1 respectively. The coercive field of the film determined from the capacitance-voltage (C-V) characteristics is slightly lower than that determined from the P-E hysteresis loop.     

Control of Leakage Resistance in Pb(Zr,Ti)O3 Thin Films by Donor Doping

Donor doping, with La and Nb, has been used successfully to improve the leakage resistance of Pb(Zr,Ti)O₃ (PZT) films. Donor doping of Pb(Zr_0.5Ti_0.5)O₃ films has led to an improvement in the leakage resistance of over 2 1/2 orders of magnitude at elevated temperatures (T 100°C). The effect on leakage resistance is the same for the A-site (La) and B-site (Nb) dopants. However, the improvement is only about 1 order of magnitude near room temperature. This temperature effect is due to an increase in the transition temperature from a low activation energy mechanism to a higher activation energy mechanism. Similar improvements in leakage resistance have also been obtained by increasing the Pb concentration in the starting solution, which implies that Pb vacancies are the dominant acceptor species in the undoped films. In addition, donor doping has been effective in improving the electrical breakdown strength at elevated temperatures. Consequently, donor-doped PZT films have been shown to be superior to undoped films for applications requiring high leakage resistance, such as decoupling capacitors.