带有自适应频率校准单元的26~41 GHz锁相环

采用45 nm SOI CMOS工艺,设计了一种带有自适应频率校准单元的26~41 GHz 锁相环。该锁相环包括输入缓冲器、鉴频鉴相器、电荷泵、环路滤波器、压控振荡器、高速时钟选通器、分频器和频率数字校准单元。采用了基于双LC-VCO的整数分频锁相环,使用了自适应频率选择的数字校准算法,使得锁相环能在不同参考时钟下自适应地调整工作频率范围。仿真结果表明,该锁相环的输出频率能够连续覆盖26~41 GHz。输出频率为26 GHz时,相位噪声为-103 dBc/Hz@10 MHz,功耗为34.64 mW。输出频率为41 GHz时,相位噪声为-96 dBc/Hz@10 MHz,功耗为35.44 mW。     

A 6-GHz integrated phase-locked loop using AlGaAs/GaAsheterojunction bipolar transistors

A fully integrated 6-GHz phase-locked-loop (PLL) fabricated using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is described. The PLL is intended for use in multigigabit-per-second clock recovery circuits for fiber-optic communication systems. The PLL circuit consists of a frequency quadrupling ring voltage-controlled oscillator (VCO), a balanced phase detector, and a lag-lead loop filter. The closed-loop bandwidth is approximately 150 MHz. The tracking range was measured to be greater than 750 MHz at zero steady-state phase error. The nonaided acquisition range is approximately 300 MHz. This circuit is the first monolithic HBT PLL and is the fastest yet reported using a digital output VCO. The minimum emitter area was 3 μm×10 μm with f_t=22 GHz and f_max=30 GHz for a bias current of 2 mA. The speed of the PLL can be doubled by using 1-μm×10-μm emitters in next-generation circuits. The chip occupies a die area of 2-mm×3-mm and dissipates 800 mW with a supply voltage of -8 V     

A low-jitter 1.9-V CMOS PLL for UltraSPARC microprocessorapplications

A phase-locked loop (PLL) for CMOS UltraSPARC microprocessor applications uses a loop filter referenced to a quiet power supply and achieves measured clock period jitter of ±25 ps at 360 MHz. The fully integrated CMOS PLL uses a charge-pump phase/frequency detector, a single-capacitor loop filter, and a feedforward error correction architecture. Loop characteristics are analyzed and verified by measurements. The measured sensitivity of clock period jitter to supply voltage is 2.6 ps/100 mv over an analog supply-voltage range of 1.6-2.1 V; the measured output operating frequency range is 8.5-660 MHz. Fabricated in an area of 310×280 μm² in a 0.25-μm CMOS process, the PLL dissipates 25 mW from a 1.9-V supply     

基于电感电容振荡器的电荷泵锁相环的设计

设计并实现了一种采用电感电容振荡器的电荷泵锁相环,分析了锁相环中鉴频/鉴相器(PFD)、电荷泵(CP)、环路滤波器(LP)、电感电容压控振荡器(VCO)的电路结构和设计考虑。锁相环芯片采用0.13μm MS&RF CMOS工艺制造。测试结果表明,锁相环锁定的频率为5.6～6.9 GHz。在6.25 GHz时,参考杂散为-51.57 dBc;1 MHz频偏处相位噪声为-98.35 dBc/Hz;10 MHz频偏处相位噪声为-120.3 dBc/Hz;在1.2 V/3.3 V电源电压下,锁相环的功耗为51.6 mW。芯片总面积为1.334 mm2。     

一种宽带低相噪频率合成器的设计方法研究

提出了一种宽带低相噪频率合成器的设计方法.采用了数字锁相技术,该锁相技术主要由锁相环（phase locked loop,PLL）芯片、有源环路滤波器、宽带压控振荡器和外置宽带分频器等构成,实现了10~20 GHz范围内任意频率输出,具有输出频率宽、相位噪声低、集成度高、功耗低和成本低等优点.最后对该PLL电路杂散抑制和相位噪声的指标进行了测试,测试结果表明该PLL输出10 GHz时相位噪声优于-109 dBc/Hz@1 kHz,该指标与直接式频率合成器实现的指标相当.     

A 0.4 ps-RMS-Jitter 1–3 GHz Ring-Oscillator PLL Using Phase-Noise Preamplification

This paper presents the design and experimental results of a 0.4 ps rms jitter (integrated from 3 kHz to 300 MHz offset at 2.5 GHz) 1–3 GHz tunable ring-oscillator PLL for integrated clock multiplier applications. A new loop filter structure based on a sample-reset phase-to-voltage converter and a Gm-C filter decouples reference spur performance from charge-pump current matching and loop filter leakage, while enables phase error preamplification to lower PLL in-band noise without reducing VCO analog tuning range or increasing loop filter capacitor size. The ring-oscillator VCO features programmability of phase noise and power consumption at a given frequency. The PLL is implemented in a digital 0.13 $mu{hbox{m}}$ CMOS process using only 1.2 V devices, occupies 0.07 ${hbox{mm}}^{2}$ and consumes 23 mW excluding reference clock receiver for 2.5 GHz output at the lowest phase noise mode.      

A 6.3-9-GHz CMOS fast settling PLL for MB-OFDM UWB applications

A CMOS phase-locked loop (PLL) which synthesizes frequencies between 6.336 and 8.976 GHz in steps of 528 MHz and settles in approximately 150 ns is presented. The proposed PLL can be employed as a building block for a frequency synthesizer which generates a seven-band hopping carrier for multiband orthogonal frequency division multiplexing (MB-OFDM) ultrawideband (UWB) radio. To achieve fast loop settling, integer-N architecture that operates with 528-MHz reference frequency is implemented and a wideband active-loop filter is integrated. An improved phase-frequency detector (PFD) is proposed for faster loop settling. To reduce reference sidebands, a feedback circuit using replica bias is implemented in the charge pump. I/Q carriers are generated by two cross-coupled LC VCOs. The output current of the charge pump is controlled to compensate for the VCO gain nonlinearity and a programmable frequency divider (12/spl les/N/spl les/17) that reliably operates at 9 GHz is designed. Fabricated in 0.18-/spl mu/m CMOS technology, the PLL consumes 32 mA from a 1.8-V supply and achieves phase noise of -109.6dBc/Hz at 1-MHz offset and spurs of -52 dBc.     

宽带低相噪频率综合器设计与实现

为满足某雷达信号设计要求,文中基于国产小数锁相环芯片GM4704产生7.12～9.12 GHz的信号,采用传统的PLL方式产生,低相位噪声、低杂散的频率综合器。同时,给出了设计过程并对相关的设计参数进行分析,应用相关的PLL仿真软件对环路滤波器进行仿真设计,通过实际电路测试,相位噪声达到-97 dBc/Hz@1 kHz与理论计算较接近,杂散达到-70 dB。     

一种基于55nmCMOS工艺，输出频率0.1G-1.5G Hz的低抖动锁相环

本文设计了一种0.1G-1.5GHz,3.07pS RMS 抖动的多相位输出锁相环。通过引入双路径电荷泵,极大的减小了锁相环中的低通滤波器的尺寸。基于指定的功耗约束,提出了一种新颖的压控振荡器、电荷泵与鉴频鉴相器的尺寸优化方法,使用该方法,每个模块输出相位噪声减小了约3-6dBc/Hz。该锁相环在55nm的工艺下流片,集成了16pF的MOM电容,占用面积仅为0.05平方毫米。输出1.5GHz信号时,功耗2.8mW,相位噪声为-102dBc/Hz@1MHz。     

A low-jitter PLL clock generator for microprocessors with lockrange of 340-612 MHz

A fully integrated, phase-locked loop (PLL) clock generator/phase aligner for the POWER3 microprocessor has been designed using a 2.5-V, 0.40-μm digital CMOS6S process. The PLL design supports multiple integer and noninteger frequency multiplication factors for both the processor clock and an L2 cache clock. The fully differential delay-interpolating voltage-controlled oscillator (VCO) is tunable over a frequency range determined by programmable frequency limit settings, enhancing yield and application flexibility. PLL lock range for the maximum VCO frequency range settings is 340-612 MHz. The charge-pump current is programmable for additional control of the PLL loop dynamics. A differential on-chip loop filter with common-mode correction improves noise rejection. Cycle-cycle jitter measurements with the microprocessor actively executing instructions were 10.0 ps rms, 80 ps peak to peak (P-P) measured from the clock tree. Cycle-cycle jitter measured for the processor in a reset state with the clock tree active was 8.4 ps rms, 62 ps P-P. PLL area is 1040×640 μm². Power dissipation is <100 mW     

A 50.8–53-GHz Clock Generator Using a Harmonic-Locked PD in 0.13- $mu$m CMOS

A 50.8-53-GHz clock generator with a quadruplicate-harmonic-locked phase detector (PD) is presented to achieve a low spur and a low reference frequency. The proposed quadruplicate-harmonic-locked PD, a low-voltage Colpitts voltage-controlled oscillator, and a wide-range divide-by-2 divider are also presented. This clock generator has been fabricated in a 0.13-mum process. The measured reference spur is -59.88 dBc at 51.02 GHz with an input reference frequency of 199.3 MHz. The area is 0.93 mm times 1 mm with the on-chip loop filter and pads. It dissipates 87 mW without buffers from a 1.5-V supply.     

A 10 GHz Phase-Locked Loop With a Compact Low-Pass Filter in 0.18 $mu$ m CMOS

In this letter, a multi-gigahertz phase-locked loop (PLL) with a compact low-pass filter is presented. By using a novel dual-path control in the PLL architecture, the capacitance in the loop filter can be effectively reduced for high-level integration while maintaining the required loop bandwidth. Consequently, the noise resulted from off-chip components is therefore eliminated, leading to lower timing jitter at the PLL output waveforms. In addition, the timing jitter is further suppressed due to the use of decomposed phase and frequency detection. Based on the proposed techniques, a 10 GHz PLL is implemented in 0.18 mum CMOS for demonstration. Consuming a dc power of 113 mW from a 1.8 V supply, the fabricated circuit exhibits a locking range from 10.1 to 11 GHz. At an output frequency of 10.3 GHz, the measured peak-to-peak and rms jitter are 3.78 and 0.44 ps, respectively.     

1.2 GHz CMOS全集成锁相环的设计

在分析影响锁相环性能的各种因素的基础上,采用相应的优化方法设计了一款全集成的1．2GHz LC锁相环。详细介绍了该锁相环中各模块电路（包括LC型压控振荡器,预分频器,分频器,鉴频／鉴相器,含有带隙基准电流源的电荷泵以及片上无源滤波器等）的设计,并且给出了仿真结果。该锁相环采用SMIC0．18μm RF CMOS工艺设计实现,其中无源滤波器也集成在片上,实现了完全片上集成。     

A 1.5 V 7.656 GHz PLL with I/Q outputs for a UWB synthesizer

A fully integrated CMOS phase-locked loop (PLL) which can synthesize a quadrature output frequency of 7.656 GHz is presented.The proposed PLL can be employed as a building block for an MB-OFDM UWB frequency synthesizer.To achieve fast loop settling,integer-N architecture operating with 66 MHz reference frequency and wideband QVCO are implemented.I/Q carriers are generated by two bottom-series cross-coupled LC VCOs.Realized in 0.18μm CMOS technology,this PLL consumes 16 mA current (including buffers) from a 1.5 V supply and the phase noise is-109.6 dBc/Hz at 1 MHz offset.The measured oscillation frequency shows that the QVCO has a range of 6.95 to 8.73 GHz.The core circuit occupies an area of 1×0.5 mm2.     

一种宽带正交振荡器中子频带的精确设计方法

设计了一个应用于3.5 GHz频段锁相环的低电压宽带正交压控振荡器。通过对开关电容阵列进行功能划分和优化设计,从而精确地将锁相环的频道点逐一映射到了振荡器的子频带中,进而消除了频道切换时子频带的选择过程时间。该芯片采用0.18μm CMOS工艺实现,测试结果表明:振荡器的频率覆盖范围从3.04~3.58 GHz,并且所有的子频带均一一准确地覆盖了目标频道点;调谐增益从86 MHz/V变化至132 MHz/V,其平均值仅比设计值高6%;最高子频带的中心频率为3.538 GHz,其偏离载波1 MHz处的相位噪声为-121.6 dBc/Hz;在1.2 V电源电压下,振荡器核心的功耗约为14 mW。     

A 3.5 in 230 Mbytes read-channel chip set for magneto-optical diskdrives

A read-channel chip set for rewritable 3.5 in 230 Mbytes magneto-optical disk drives (MOD) is presented. The front-end chip includes an automatic gain control (AGC) circuit, a programmable six-pole two-zero equiripple filter/equalizer, a DC restore circuit, and pulse detectors. The back-end contains a frequency synthesizer phase-locked loop (PLL) and a data separator PLL with 3:1 operating range to support a constant density recording with 8-24 Mb/s data rate (or code rate of 16 to 48 Mb/s) in (2, 7) run-length limited (RLL) encoding format. The architecture of the chip provides high degree of programmability through a serial microprocessor interface, fast switching (<1 μs) between sector mark and data detector modes, and four levels of power management in a 1.5 μm 4 GHz BiCMOS process. With a nominal power supply of 5 V, the chip set dissipates 600 mW during normal operation and 1 mW during sleep mode     

An area-saving dual-path loop filter for low-voltage integrated phase-locked loops

This paper proposes an area-saving dual-path loop filter (LPF) for low-voltage integrated phase-locked loops (PLLs). With this LPF, output current of the lowpass-path charge-pump (CP) is B times (B>1) as great as that of the integration-path CP. By adding voltages across these two paths, the zero-capacitance is magnified B times equivalently. As a result, the chip size is greatly reduced. Based on this LPF, a 1.2 V 3.5 GHz-band PLL is fabricated in SMIC 0.18 μm RFCMOS technology. Its zero-capacitance is only 1/30 of that in conventional second-order LPFs. Measured data show that, at a frequency of 3.20 GHz, phase noise is -120.2 dBc/Hz at 1 MHz offset, reference spur is -72 dBc, and power is 24 mW.     

一种基于自偏置技术的低抖动锁相环

设计了一种环路带宽与输入频率的比值固定的自偏置锁相环。对VCO延迟单元进行改进,降低了抖动。采用SMIC 65 nm CMOS工艺,在1.2 V的工作电压下对锁相环进行仿真,输出频率范围为0.5~3.125 GHz。仿真结果表明,在输出频率1.875 GHz处的峰峰值抖动为8.7 ps,电路的核心功耗为45 mW,相位噪声为-79.7 dBc/Hz。     

A fully integrated V-band PLL MMIC using 0.15-/spl mu/m GaAs pHEMT technology

A fully integrated V-band phase-locked loop (PLL) MMIC with good phase noise and low-power consumption is developed using 0.15-/spl mu/m GaAs pHEMTs. For V-band frequency division,a wideband divide-by-3 frequency divider is proposed using cascode FET-based harmonic injection locking. The fourth subharmonic mixer using anti-parallel diode pair is employed as a high-frequency phase detector. In this way, the required frequency of the reference oscillator is lowered to one twelfth of V-band output signal. An RC low-pass filter and DC amplifier are also integrated to effectively suppress the spurious and harmonic signals, and to increase the loop gain. To reduce the circuit interactions and frequency pulling effect, buffer amplifiers are used at the output of VCO and frequency divider. The fabricated V-band PLL MMIC shows the locking range of 840 MHz around 60.1GHz under a very low power dissipation of 370 mW. Good phase noise of -95.5 dBc/Hz is measured at 100 kHz offset. The chip size is as small as 2.35/spl times/1.80 mm/sup 2/. To the best of our knowledge, the PLL MMIC of this work is one of the highest frequency monolithic PLLs that integrates all the required elements on a single chip.     

A 50-GHz Phase-Locked Loop in 0.13-μ m CMOS

A 50-GHz charge pump phase-locked loop (PLL) utilizing an LC-oscillator-based injection-locked frequency divider (ILFD) was fabricated in 0.13-mum logic CMOS process. The PLL can be locked from 45.9 to 50.5 GHz and output power level is around -10 dBm. The operating frequency range is increased by tracking the self-oscillation frequencies of the voltage-controlled oscillator (VCO) and the frequency divider. The PLL including buffers consumes 57 mW from 1.5/0.8-V supplies. The phase noise at 50 kHz, 1 MHz, and 10 MHz offset from the carrier is -63.5, -72, and -99 dBc/Hz, respectively. The PLL also outputs second-order harmonics at frequencies between 91.8 and 101 GHz. The output frequency of 101 GHz is the highest for signals locked by a PLL fabricated using the silicon integrated circuits technology.