毫米波300W固态功率合成放大器的设计

基于单片微波集成功率放大器(Monolithic Microwave Integrated Circuits,MMIC PA)的毫米波波导空间功率合成技术是固态毫米波高功率电子领域的热门研究方向。多合成支路情况,保持较高的合成效率和较宽的工作带宽是实现固态毫米波宽带高功率合成的关键技术难题。为提高功率合成效率,研制了石英基板微带探针与波导之间的过渡结构。结合波导T型分支、波导分支线、波导H面缝隙耦合和波导一分四型的4种波导功率分配/合成器,通过精确的电磁仿真研制了64路功率合成放大器。     

Coplanar millimeter-wave ICs for W-band applications using 0.15μm pseudomorphic MODFETs

A small signal S-parameter and noise model for the cascode MODFET has been validated up to 120 GHz, allowing predictable monolithic microwave integrated circuit (MMIC) design up to W-band. The potential of coplanar waveguide technology to build compact, high performance system modules is demonstrated by means of passive and active MMIC components. The realized passive structures comprise a Wilkinson combiner/divider and a capacitively loaded ultra miniature branch line coupler. For both building blocks, very good agreement between the measured and modeled data is achieved up to 120 GHz. Based on the accurate design database, two versions of compact integrated amplifiers utilizing cascode devices for application in the 90-120 GHz frequency range were designed and fabricated. The MMICs have 26.3 dB and 20 dB gain at 91 GHz and 110 GHz, respectively. A noise figure of 6.4 dB was measured at 110 GHz. The 90-100 GHz amplifier was integrated with an MMIC tunable oscillator resulting in a W-band source delivering more than 6 dBm output power from 94 to 98 GHz     

Multioctave spatial power combining in oversized coaxial waveguide

We describe a multioctave power-combiner structure using finline arrays in an oversized coaxial waveguide. The spectral-domain method (SDM) is used to compute the propagation constant in this structure, and is verified with HFSS simulations. The SDM method is then employed to synthesize broad-band tapered impedance transformers in finline for coupling energy to and from a set of monolithic microwave integrated circuit (MMIC) amplifiers. A modular assembly is described using a sectoral tray architecture. The concept is demonstrated for a 32-MMIC system using low-power traveling-wave amplifier MMICs, providing a 3-dB bandwidth of 13 GHz (3-16 GHz). An output combining loss of 1 dB is estimated from the small-signal measurements, suggestion a combining efficiency of ~75% for 32 MMICs     

Narrowband amplifier with excellent power combining efficiency

Based on a coaxial waveguide power-dividing/combining circuit, a four-device solid-state power amplifier with excellent power combining efficiency is presented. The fabricated power amplifier combining four monolithic microwave integrated circuit power amplifiers shows a 13-16.65 dB small-signal gain over a wide bandwidth of 7-13.5 GHz. The measured maximum output power at 1 dB compression is 25.4 dBm at 11 GHz, with a power-combining efficiency of 91%.     

一种基于径向波导的Ka 波段宽带功分器设计

本文提出了一种新型的基于径向波导的Ka 波段八路功率分配器。为了拓展该功率分配器的带宽,我们采用了一种对称的过模同轴波导将输入信号馈入径向波导,同时在径向波导的底部采用阶梯阻抗变换技术实现阻抗的匹配,根据电磁仿真模拟,其-20dB 回波损耗的带宽大约是28.57％（从30 至40 千兆赫）,而且在该频段此结构能够得到良好的幅度不平衡度和相位不平衡度。这种结构不仅具有宽带宽,低插入损耗和高输出功率等优点,而且体积小,功率合成效率和散热效率高,具有毫米波宽带大功率合成应用的潜力。     

Millimeter-wave-band amplifier and mixer MMICs using a broad-band45° power divider/combiner

This paper demonstrates millimeter-wave-band amplifier and mixer monolithic microwave integrated circuits (MMIC's) using a broad-band 45° power divider/combiner. At first, we propose a broad-band 45° power divider/combiner, which combines a Wilkinson divider/combiner, 45° delay line, and 90° short stub. A coupling loss of 4.0±0.2 dB and a return loss and an isolation of more than 19 dB with 45±1° phase difference was obtained from 17 to 22 GHz for the fabricated K-band MMIC 45° power divider/combiner. Next, a parallel amplifier using the broad-band 45° power divider/combiner, which can be used in a power-combining circuit configuration requiring no isolator, is shown. Comparing the transmitter intermodulation generated in the parallel amplifier using the broad-band 45° power divider/combiner and that generated in the one using the conventional type, the broad-band suppression effect was confirmed. Finally, an application of the broad-band 45° power divider/combiner to a single-sideband (SSB) subharmonically pumped (SHP) mixer requiring no IF switch is shown. In an RF frequency range from 22.89 to 26.39 GHz, the fabricated K-band MMIC mixer achieved (for up-conversion) the good results of more than -13-dB conversion gain and more than 24-dB image-rejection ratio. These contribute significantly to the miniaturization of millimeter-wave communication equipment     

50W Ka频段固态功率放大器设计

阐述了3 dB分支波导定向耦合器、波导—微带双探针过渡、改进型波导T型结的原理,介绍了一种4路功率分配/合成网络。提出了一种8路功率分配/合成器,其结构具有插入损耗低、输入驻波好、幅度相位一致性好等优点。研制了50 W Ka频段固态功率放大器,由驱动级放大器、8路功率分配/合成器和8个7 W功放模块组成,在29~31 GHz频率范围内实现了大于50 W的线性输出功率,合成效率高于80%。     

宽带高效径向波导基空间功率合成技术

为获得振幅和相位一致性较好的空间功率合成结构,对径向波导电磁场分布进行了理论分析,推导出径向波导内存在TM_(00)主模.根据TM_(00)波电磁场的轴向对称性,提出了径向波导功分器的简化电磁模型和等效电路.并由此研制出了性能良好的X波段159 W固态功率放大器.在整个X波段,无源合成网络的合成效率都大于88%.含单片微波集成电路芯片(MMIC)的整体合成固态功放合成效率在整个MMIC工作频率范围内(11.9～12.3 GHz)大于83%.     

V-band high-efficiency broadband power combiner and power-combining module using double antipodal finline transitions

A V-band high-efficiency power-combining module was developed using double antipodal finline structures. The combiner performs the dual functionality of power combining and mode transition from microstrip to waveguide. The measurement of the back-to-back connected combiner demonstrated an insertion loss of 1.2 dB and return loss better than 15 dB around 60 GHz with a 3 dB bandwidth of 18 GHz. The power-combining module incorporating two MMIC power amplifiers demonstrated a combining efficiency higher than 80%.     

Spatial power amplifier using a passive and active TEM waveguide concept

A new spatial power amplifier is presented in which power is spatially combined within a TEM waveguide using a low-loss transition array of E-plane integrated finlines to microstrip lines. The TEM-mode waveguide is implemented using a periodically patterned surface called a uniplanar compact electromagnetic bandgap (UC-EBG) structure. Our designed Ku-band back-to-back transition array demonstrates a maximum return loss of 17.5 dB and a maximum insertion loss of 0.65 dB. The TEM waveguide is found to have a 1-GHz bandwidth centered at 14.5 GHz. Tuning of the center frequency may be accomplished via an active UC-EBG structure that incorporates varactor diodes. The use of the UC-EBG surface allows more power cards to be inserted within the TEM waveguide since the amplifier cells saturate uniformly. The spatial power combiner is used to combine the output powers of 12 20-mW monolithic-microwave integrated-circuit amplifier chips. The designed power module yields an output power of 23.15 dBm and a combining efficiency of 86%. A comparison between the passive and active UC-EGB surfaces is experimentally demonstrated.     

A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE

The performance of a compact coplanar microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-/spl mu/m gate-length GaAs power pseudomorphic high electron mobility transistor (PHEMT) process on 4-in wafer, this two-stage amplifier, having a chip size of 16 mm/sup 2/, averages 4-W continuous-wave (CW) and 25% mean power-added efficiency (PAE) in the X-band, with more than 18-dB linear gain. Peak output powers of P/sub -1dB/=36.3dBm (4.3 W) and P/sub sat/ of 36.9 dBm (4.9 W) at 10 GHz with a PAE of 50% were also measured. Compared to previously reported X-band coplanar high-power amplifiers, this represents a chip size reduction of 20%, comparable to the size of compact state-of-the-art microstrip power amplifiers.     

2–8 GHz 8-W Power Amplifier MMIC Developed Using MSAG MESFET Technology

Design approach and test data for a two-octave bandwidth HPA developed using GaAs based multifunction self aligned gate metal semiconductor field effect transistor with multilevel plating monolithic microwave integrated circuit (MMIC) technology are presented. A low loss matching design technique was used in the development of a two-stage power amplifier. The broadband amplifier has exhibited 8 W power output and better than 16% PAE over the 2.0-8.0 GHz frequency range. To our knowledge, these results represent the state-of-the-art in output power for multi-octave S/C-band power MMIC amplifiers.     

44 GHz waveguide-based power amplifier module using doubleantipodal finline transitions

A 44 GHz waveguide-based power amplifier module was developed using the double antipodal-finline transitions which also serve as a power combiner. The measured insertion loss of the proposed combiner was ~0.9 dB per transition around 44 GHz. The fabricated power amplifier module combining two 0.93 W monolithic microwave integrated circuit power amplifiers showed a saturated output power of 1.4 W with a high combining efficiency of 75% at 44 GHz     

High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit

A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit (MMIC), which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology.The power amplifier (PA) was studied taking into account the linearizer circuit and the coplanar waveguide (CPW) structures. Based on these technologies, the power amplifier, which has a chip size of 1.44 × 1.10 mm~2, obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region. An input third-order intercept point (IIP_3) of-3 dBm, an output third-order intercept point (OIP_3) of 21.1 dBm and a power added efficiency (PAE) of 22% were attained, respectively. Finally, the overall power characterization exhibited high gain and high linearity, which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics. This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz.     

PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit

A personal communications service/wide-band code division multiple access (PCS/W-CDMA) dual-band monolithic microwave integrated circuit (MMIC) power amplifier with a single-chip MMIC and a single-path output matching network is demonstrated by adopting a newly proposed on-chip linearizer. The linearizer is composed of the base-emitter diode of an active bias transistor and a capacitor to provide an RF short at the base node of the active bias transistor. The linearizer enhances the linearity of the power amplifier effectively for both PCS and W-CDMA bands with no additional DC power consumption, and has negligible insertion power loss with almost no increase in die area. It improves the input 1-dB gain compression point by 18.5 (20) dB and phase distortion by 6.1/spl deg/ (12.42/spl deg/) at an output power of 28 (28) dBm for the PCS (W-CDMA) band while keeping the base bias voltage of the power amplifier as designed. A PCS and W-CDMA dual-band InGaP heterojunction bipolar transistor MMIC power amplifier with single input and output and no switch for band selection is embodied by implementing the linearizer and by designing the amplifier to have broad-band characteristics. The dual-band power amplifier exhibits an output power of 30 (28.5) dBm, power-added efficiency of 39.5 % (36 %), and adjacent channel power ratio of -46 (-50) dBc at the output power of 28 (28) dBm under 3.4-V operation voltage for PCS (W-CDMA) applications.     

A 6-GHz 80-W GaAs FET Amplifier with a TM-Mode Cavity Power Combiner

A novel 8-way divider/combiner using TM/sub 010/- and TM/sub 020/ -mode cavities was developed. This divider/combiner has an insertion loss of 0.2 dB and a bandwidth of 600 MHz in the 6-GHz communications band. For broadening the operating bandwidth of the divider/combiner, two techniques of double cavities and tight coupling are described. Degradation of power-combining efficiency is also discussed when input signals into a power combiner have variations in amplitude and phase. By using this divider/combiner, an experimental 6-GHz 80-W GaAs FET amplifier with a combining efficiency of 85 percent was demonstrated to investigate the feasibility of a solid-state high-power amplifier.     

（英）D波段InP基高增益、低噪声放大芯片的设计与实现

利用90-nm InAlAs/InGaAs/InP HEMT工艺设计实现了两款D波段（110~170 GHz）单片微波集成电路放大器。两款放大器均采用共源结构,布线选取微带线。基于器件A设计的三级放大器A在片测试结果表明：最大小信号增益为11.2 dB@140 GHz,3 dB带宽为16 GHz,芯片面积2.6×1.2 mm2。基于器件B设计的两级放大器B在片测试结果表明：最大小信号增益为15.8 dB@139 GHz,3dB带宽12 GHz,在130~150 GHz频带范围内增益大于10 dB,芯片面积1.7×0.8 mm2,带内最小噪声为4.4 dB、相关增益15 dB@141 GHz,平均噪声系数约为5.2 dB。放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数。该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义。     

Silicon IMPATT cascaded amplifier: 6 W (c.w.) at 9.6 GHz

A compact silicon IMPATT 4-stage coaxial amplifier has given 6.3 W (c.w.) with a power gain of 28 dB and an instantaneous bandwidth (?1 dB) of 200 MHz centred at 9.6 GHz. A gain ripple of less than 0.2 dB and phase deviation from linearity of ±3° across a 30 MHz bandwidth slot was obtained at the full rated output power. The overall efficiency was 4.5%. Commercial devices and circulators were used throughout the unit and the power in the final stage was obtained by combining the available powers from four separate devices. Particular attention was paid to the circuits to reduce the onset of spurious oscillations under large-signal conditions.     

A fully integrated 2.4 GHz CMOS high power amplifier using parallel class A&B power amplifier and power-combining transformer for WiMAX application

A new structure integrated power amplifier with watt-level output power is presented in a standard 0.18 μm CMOS process for WiMAX applications. A parallel cascode class A&B power amplifier with optimized widths is proposed to increase linearity and efficiency simultaneously. A novel interleaved PCT power combiner is proposed for increasing output power that combines output current of two similar class A&B power amplifiers. Proposed interleaved transformer heightens coupling factor compared to typical transformer.     

A MICROSTRIP PROBE COAXIAL WAVEGUIDE POWER DIVIDER/COMBINER

A novel power divider/combiner using microstrip probes array in the oversized coaxial waveguide is proposed in this paper. The simple electromagnetic modeling of this power dividing/combining structure has been developed. Analysis based on equivalent circuits gives the design formula for perfect power dividing/combining. A four-way waveguide power divider has been designed and fabricated. The measured results agree well with the simulated results. The measured 15-dB return loss bandwidth of this waveguide power divider is demonstrated to be 28.6% and its 0.5-dB insertion loss bandwidth 41.3%.