共查询到19条相似文献，搜索用时 78 毫秒
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熊猫电子集团公司 岳云铁电随机存取存储器（FRAM）因为兼有RAM和ROM存储器的性能,自其问世以来便引起了人们的极大关注,并已在各种公用事业用表（如电表、水表、煤气表等）、测量和医疗仪表、非接触式智能卡、门禁系统和汽车黑匣子当中得到了日益广泛的应用。在此背景下,2001年11月,ITRS（InternationalTechnology Roadmap forSemiconductor）首次公布了FeRAM的发展计划（参见表1）。FeRAM的发展方向主要是精细化和低电压化,本文将着重介绍铁电电容器技术以及相关的电路技术方面的一些近期动向。一、铁电电容器技术从产品… 相似文献
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介绍了铁电存储器的存储原理,同时对两种铁电存储器(铁电随机存取存储器和铁电场效应晶体管存储器)的研究进展、当前存在的问题以及我国目前在这一领域的研究现状进行了简单介绍,并对今后的技术发展进行了展望。 相似文献
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The class of dynamic faults has been recently shown to be an important class of faults for the new technologies of Random
Access Memories (RAM) with significant impact on defect-per-million (DPM) levels. Very little research has been done in the
design of memory test algorithms targeting dynamic faults. Two March test algorithms of complexity 11N and 22N, N is the number of memory cells, for subclasses of two-operation single-cell and two-cell dynamic faults, respectively, were
proposed recently [Benso et al., Proc., ITC 2005] improving the length of the corresponding tests proposed earlier [Hamdioui et al., Proc. of IEEE VLSI Test Symposium, pp. 395–400, 2002]. Also, a March test of length 100N was proposed [Benso et al., Proc. ETS 2005, Tallinn, pp. 122–127, 2005] for detection of two-cell dynamic faults with two fault-sensitizing operations both applied on the victim or aggressor cells.
In this paper, for the first time, March test algorithms of minimum length are proposed for two-operation single-cell and
two-cell dynamic faults. In particular, the previously known March test algorithm of length 100N for detection of two-operation two-cell dynamic faults is improved by 30N.
相似文献
| Y. ZorianEmail: |
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Puqi Hao Shuaizhi Zheng Binjian Zeng Tao Yu Zhibin Yang Luocheng Liao Qiangxiang Peng Qijun Yang Yichun Zhou Min Liao 《Advanced functional materials》2023,33(31):2301746
The next-generation semiconductor memories are essentially required for the advancements in modern electronic devices. Ferroelectric memories by HfO2-based ferroelectric thin films (FE-HfO2) have opened promising directions in recent years. Nevertheless, improving the polarization switching speed of FE-HfO2 remains a critical task. In this study, it is demonstrated that the composition-graded Hf1-xZrxO2 (HZO) ferroelectric thin film has more than two times faster polarization switching speed than the conventional composition-uniform one. Meanwhile, it has excellent ferroelectricity and improved endurance characteristics. It is also discovered that when the HZO thin film has a gradient composition, the polarization-switching dynamics shifts from the nucleation-limited-switching mechanism to the domain-wall growth mechanism. Moreover, the transition of switching dynamics is responsible for the faster speed and better endurance of the composition-graded HZO thin film. These findings not only reveal the physical mechanisms of this material system but also provide a new strategy for memory devices having faster speed and higher endurance. 相似文献
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Binjian Zeng Chen Liu Siwei Dai Pingan Zhou Keyu Bao Shuaizhi Zheng Qiangxiang Peng Jinjuan Xiang Jianfeng Gao Jie Zhao Min Liao Yichun Zhou 《Advanced functional materials》2021,31(17):2011077
The ferroelectric field-effect transistor (FeFET) is a promising memory technology due to its high switching speed, low power consumption, and high capacity. Since the recent discovery of ferroelectricity in Si-doped HfO2 thin films, HfO2-based materials have received considerable interest for the development of FeFET, particularly considering their excellent complementary metal-oxide-semiconductor (CMOS) compatibility, relatively low permittivity, and high coercive field. However, the multilevel capability is limited by the device size, and multidomain switching tends to vanish when the channel length of the HfO2-based FeFET approaches 30 nm. Here, multiple nonvolatile memory states are realized by tuning the electric field gradient across the Hf0.5Zr0.5O2 (HZO) ferroelectric thin film along the channel direction of FeFET. The multi-step domain switching can be readily and directionally controlled in the HZO-FeFETs, with a very low variation. Moreover, multiple nonvolatile memory states or multi-step domain switching can be effectively controlled in the FeFETs with a channel length less than 20 nm. This study suggests the possibility to implement multilevel memory operations and mimic biological synapse functions in highly scaled HfO2-based FeFETs. 相似文献
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A new BIST scheme for on-chip testing of non-volatile memories and based on signature analysis is presented. The signature of the whole memory, whose content can be changed selectively by the user, is dynamically self-learned by the memory and it is saved in a dedicated memory location. Either such a signature can be externally compared with the expected one in order to check for the programming operation, or it can be used for comparison purposes when data retention must be self-tested. 相似文献
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描述了一种检测单向双端口 SRAM失效的算法 ,采用了基于字的测试方法 ,可以有效地检测字间失效、字内失效和同时读写失效 ,具有失效覆盖率高和测试时间复杂度低的优点。 相似文献
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RAMTRON公司生产的并行接口高性能铁电存储器FM1808是NV -SRAM的理想替代产品。文中介绍了FM1808的性能特点、引脚功能和工作原理 ,同时重点介绍了铁电存储器的应用特点及与其它类型存储器之间的应用差别 ,给出了FM1808的设计应用要点 相似文献
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Doohyung Kim Seungjun Lee Yoonseok Lee Yongjin Park Jungwoo Lee Sungjun Kim 《Advanced functional materials》2024,34(49):2409095
Hardware-based reservoir computing (RC) systems provide benefits like energy efficiency and effective predictability. The implementation of different switching characteristics for the reservoir and readout layers requires the use of different types of devices or additional processing. However, an RC system with distinguishable switching characteristics obtained by changing stimulation on a single device is not identified yet, but it is appealing in terms of process simplicity and efficient processing costs. This study develops an RC system that uses ferroelectric thin-film transistor (FeTFT) devices with an indium gallium zinc oxide channel and Hf0.5Zr0.5O2 ferroelectric layer for both networks. The nonvolatile FeTFT utilizes the remnant polarization properties of the ferroelectric layer through electrical stimulation, showing stable retention characteristics (104 s) and long-term potentiation/depression. By using optical stimulation, the volatile FeTFT demonstrates short-term characteristics, such as paired-pulse facilitation, and a 4-bit RC system. This proves that it is possible to meet the functional requirements of both the reservoir and readout networks by simply varying the type of stimulation applied to a single FeTFT. Finally, the fully FeTFT-based RC system can recognize digit patterns from the Modified National Institute of Standards and Technology database with a high accuracy of 90.5%. 相似文献