Characteristics of carbon films prepared by plasma-based ion implantation

A series of carbon films have been prepared by plasma-based ion implantation (PBII) with C on pure Al and Si. Emphasis has been placed on the effect of implanting voltage on the characteristics of these films. The structures of the films were analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The morphologies were observed by atomic force microscope (AFM). Surface hardness and electrical resistivity were also measured. The results indicate that the characteristics of these films are strongly dependent on the implanting voltage. An implanting voltage threshold value ranging from 3 to 5 kV starts to form a C-substrate transition layer owing to C⁺ ions implanted into the substrate. The transition layer exhibits a gradual change in composition and structure and effectively connects the carbon film and the substrate. Also, an implanting voltage threshold value ranging from 5 to 10 kV starts to form diamond-like carbon (DLC) films. An increasing voltage causes the resultant DLC films to be smoother and more compact. Moreover, Raman spectrum, chemical state of C1s, surface hardness and electrical resistivity all prove an optimum voltage of approximately 30 kV corresponding to the lowest ratio of sp²/sp³.     

The role of pressure on thin amorphous carbon films deposited using microwave surface wave plasma CVD

We report the effects of gas composition pressure (GCP) on the optical, structural and electrical properties of thin amorphous carbon (a-C) films grown on p-type silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (MW SWP CVD). The films, deposited at various GCPs ranging from 50 to 110 Pa, were studied by UV/VIS/NIR spectroscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and current–voltage characteristics. The optical band gap of the a-C film was tailored to a relatively high range, 2.3–2.6 eV by manipulating GCPs from 50 to 110 Pa. Also, spin density strongly depended on the band gap of the a-C films. Raman spectra showed qualitative structured changes due to sp³/sp² carbon bonding network. The surfaces of the films are found to be very smooth and uniform (RMS roughness < 0.5 nm). The photovoltaic measurements under light illumination (AM 1.5, 100 mW/cm²) show that short-circuit current density, open-circuit voltage, fill factor and photo-conversion efficiency of the film deposited at 50 Pa were 6.4 μA/cm², 126 mV, 0.164 and 1.4 × 10^− 4% respectively.     

Dependence of the composition and bonding structure of carbon nitride films deposited by direct current plasma assisted pulsed laser ablation on the deposition temperature

Carbon nitride films were deposited by direct current plasma assisted pulsed laser ablation of a graphite target under nitrogen atmosphere. Atomic force microscopy (AFM), Fourier transform infrared (FTIR), Raman, and X-ray photoelectron spectroscopy (XPS) were used to characterize the surface morphology, bonding structure, and composition of the deposited films. The influence of deposition temperature in the range 25–400 °C on the composition and bonding structure of carbon nitride films was systematically studied. AFM images show that surface roughness and cluster size increase monotonically with deposition temperature. XPS, FTIR, and Raman spectra indicate directly the existence of CN, CN, and CN bonds in the deposited films. The increase of deposition temperature results in a drastic decrease in the N/C ratio, the content of CN bond and N atoms bonded to sp³ C atoms, in addition to the increase in the content of disorder sp² C atoms and N atoms bonded to sp² C atoms in the deposited films. Raman spectra show that the intensity ratio of D peak over G peak increases with increasing deposition temperature to 200 °C, then decreases with the further increase of deposition temperature, which results from the continuous growth of sp² cluster in the films.     

Structural investigation of nanocrystalline diamond/amorphous carbon composite films

Nanocrystalline diamond/amorphous carbon (NCD/a-C) composite films have been prepared by microwave plasma chemical vapor deposition (MWCVD) from methane/nitrogen mixtures. The complex nature of the coatings required the application of a variety of complementary analytical techniques in order to elucidate their structure. The crystallinity of the samples was studied by selected-area electron diffraction (SAED). The diffraction patterns revealed the presence of diamond crystallites within the films. From the images taken by transmission electron microscopy (TEM) the crystallite size was determined to be on the order of 3–5 nm. The results were confirmed by X-ray diffraction (XRD) measurements exhibiting broad (111) and (220) peaks of diamond from which the average size of the crystallites was calculated. The grain boundary width is 1–1.5 nm as observed by TEM images which corresponds to a matrix volume fraction of about 40–50%. This correlates very well with the crystalline phase content of about 50% in the films estimated from their density (2.75 g/cm³ as determined by X-ray reflectivity). The bonding structure of the composite films was studied by electron energy loss spectroscopy (EELS) in the region of carbon core level. The spectra were dominated by a peak at 292 eV indicating the diamond nature of the investigated films. In addition, the spectra of NCD/a-C films possessed a shoulder at 284 eV due to the presence of a small sp² bonded fraction. This phase was identified also by X-ray photoelectron spectroscopy (XPS). The sp²/sp³ ratio was on the order of 10% as determined by deconvolution of the C1s XPS peak.     

Enhanced cycling stability of Ni-MH battery by depositing amorphous carbon film on the Ti1.4V0.6Ni negative electrode

Amorphous carbon (a-C) films with various thicknesses depending on the reaction time are deposited on the surface of Ti_1.4V_0.6Ni alloy electrodes for Ni-MH (nickel-metal hydride) battery by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). With the increasing deposition time, the Raman spectra show a gradually disordered sp²-bonding change of the films and the changing trend of sp²/sp³ is obtained by X-ray photoelectron spectroscopy. The a-C film of depositing for 30 min with the thickness of 400 nm shows a favorable stability in alkaline electrolyte, the capacity is enhanced by 36.2% after 50 cycles than the bare electrode, and the charge voltage is 80 mV lower than the bare one. The a-C film with high sp²-bonded carbon content effectively reduces the charge transfer resistance, and as a coating layer, the dissolution of V of the alloy is also inhibited. In particular, to get a proper discharge voltage and a stable capacity simultaneously, covering completely and an appropriate thickness of the a-C film are crucial for an expected performance.     

Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering

Hydrogen-free a-C:Si films with Si concentration from 3 to 70 at.% were prepared by magnetron co-sputtering of pure graphite and silicon at room temperature. Mechanical properties (hardness, intrinsic stress), film composition (EPMA and XPS) and film structure (electron diffraction, Raman spectra) were investigated in dependence on Si concentration, substrate bias and deposition temperature. The film hardness was maximal for ∼ 45 at.% of Si and deposition temperatures 600 and 800 °C. Reflection electron diffraction indicated an amorphous structure of all the films. Raman spectra showed that the films in the range of 35–70 at.% of Si always contain three bands corresponding to the Si, SiC and C clusters. Photoelectron spectra showed dependency of Si–C bond formation on preparation conditions. In the films close to the stoichiometric SiC composition, the surface and sub-surface carbon atoms exhibited dominantly sp³ bonds. Thus, the maximal hardness was observed in nanocomposite a-C:Si films with a small excess of carbon atoms.     

Effects of thermal annealing and Si incorporation on bonding structure and fracture properties of diamond-like carbon films

The effects of thermal annealing and Si incorporation on the structure and properties of diamond-like carbon (DLC) films were investigated. As-deposited DLC film (DLC) and Si incorporated DLC film (Si-DLC), both with and without thermal annealing, were analyzed for bonding structure, residual stress, film thickness, elastic modulus and fracture properties using Raman spectroscopy, wafer curvature, nanoindentation, four-point bend fracture testing, and X-ray photoelectron spectroscopy (XPS). Raman spectroscopy clearly showed that thermal annealing of DLC films promotes more sp² bonding character, whereas Si incorporation into the films promotes more sp³ bonding character. Interfacial fracture energies, film hardness and elastic modulus, and residual film stress were all found to vary strongly with the degree of sp³ bonding in the DLC film. These changes in mechanical properties are rationalized in terms of the degree of three dimensional inter-links within the atomic bond network.     

Influence of the substrate nature on the properties of nanocrystalline diamond films

Nanocrystalline diamond/amorphous carbon (NCD/a-C) nanocomposite films have been deposited by microwave plasma CVD from CH₄/N₂ mixtures on a variety of substrates such as polycrystalline diamond, cubic boron nitride, silicon, titanium nitride, and Ti–6Al–4V. The study aimed to investigate the influence of the chemical nature of the substrate, the surface roughness, and the pretreatment of the substrate on the nucleation, the bulk structure, and the mechanical and tribological properties of the NCD/a-C films. The present paper is especially devoted to the bulk structure of the films. By means of X-ray diffraction (XRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) it is shown that the bulk properties of the films are not affected by the properties of the substrate although these have a strong influence on the nucleation behaviour. XRD measurements show that – irrespective of the substrate used – the films contain diamond nanocrystallites of 3–5 nm diameter. From the Raman spectra it can be inferred that the crystallite/matrix ratio does not vary. The XPS measurements, finally, show that there are no great changes in the sp²/sp³ ratio of the matrix. These findings are discussed in view of possible growth mechanisms of NCD/a-C nanocomposite films.     

Hydrogenated amorphous carbon films deposited on 316L stainless steel

Research on hydrogen amorphous carbon films (a-C:H), which possess the diamond-like characteristic, has been stimulated for many years by need to simultaneously optimizing the mechanical, optical and biological properties, and by challenges related to the deposition of a-C:H films on medical implants. In the present work, we investigate the structure, optical and mechanical properties (hardness, elastic modulus and stress) of a-C:H films deposited on 316L stainless steel substrate by the radio frequency plasma enhanced chemical vapor deposition (RF PECVD). The negative self-bias voltages significantly influence on temperature of steel substrates during the deposition process and films properties. Specifically, the high energetic deposition leads also to stabilization of the sp² content and thermally-activated relaxation in the stress of a-C:H films. Presented correlation between the obtained results and literature analysis let deem the Raman spectra as a good tool to control the properties of implants made of 316L stainless steel with a-C:H film for general use.     

Deposition of iron containing amorphous carbon films by filtered cathodic vacuum arc technique

Iron containing amorphous carbon (a-C:Fe) films have been deposited with an Fe/graphite composite target with different Fe content by filtered cathodic vacuum arc (FCVA) technique. X-Ray induced photoelectron spectroscopy (XPS) was used to analyze the Fe content in the films. Micro-Raman spectroscopy was employed to characterize the structural changes of a-C:Fe films. The properties of the a-C:Fe films such as the intrinsic stress, morphology and roughness investigated by the profiler, atomic force microscope (AFM). The XPS results show that there exists small amount of oxygen in the form of FeO in the films and the Fe fraction in the films is always larger than that in the target. Compared with pure amorphous carbon films the intrinsic stress was effectively reduced by incorporating Fe into the films, and decreases with increasing Fe content. As increasing the Fe content, the clusters in the films become finer and the roughness increases The studies of Raman spectra show that the positions of G peak and D peak shift to low and high wavenumbers, respectively, and the ratio of the intensity of D and G peaks increases with an increase in Fe content, that suggests that the sp²-bonded carbon and the size of the sp²-bonded cluster increases with an increase in the Fe content.     

Boron doped amorphous carbon thin films grown by r.f. PECVD under different partial pressure

Boron doped hydrogenated amorphous carbon (a-C) thin films have been deposited by r.f.-plasma CVD with a frequency of 13.56 MHz at room temperature using pure methane as a precursor of carbon source mixed with hydrogen (H₂) as a carrier gas. The films were prepared by varying the r.f. power, different flow rates of CH₄, and partial pressure of mixed gas (CH₄/H₂) using solid boron as a target. The thickness, structural, bonding and optical properties of the as-deposited films were studied by Alpha step surface profiler, Raman, FT-IR, XPS and UV–visible spectroscopy. It was found that changing the deposition pressure in presence of solid boron dopant in the r.f. PECVD process has a profound effect on the properties of the deposited films, as evidenced from their Raman scattering and optical results. The grown p-C: B films were found very smooth and thickness in the range of 240 to 360 nm for 1 h deposition. Films deposited at lower pressure appear brownish color whereas those deposited at higher pressure appear pale yellowish. The as-deposited film is found to be dominated by sp² rather than sp³, which might be due to the formation of small crystallites. The optical band gap is found to be reduced from 2.601.58 eV as the partial pressure of CH₄/H₂ gas is reduced.     

Temperature effect on bonding structures of amorphous carbon containing more than 30at.% silicon

Bonding evolution of amorphous carbon incorporated with Si or a-C(Si) in a thermal process has not been studied. Unhydrogenated a-C(Si) films were deposited by magnetron sputtering to undergo two different thermal processes: i) sputter deposition at substrate temperatures from 100 to 500 °C; ii) room temperature deposition followed by annealing at 200 to 1000 °C. The hardness of the films deposited at high temperature exhibits a monotonic decrease whereas the films deposited at room temperature maintained their hardness until 600 °C. X-ray photoelectron spectroscopy and Raman spectroscopy were used to analyze the composition and bonding structures. It was established that the change in the mechanical property is closely related to the atomic bonding structures, their relative fractions and the evolution (conversion from C–C sp³ → CC sp² or CC sp² → C–Si sp³) as well as clustering of sp² structures.     

Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from −20 to −350 V) and the nitrogen background pressure (up to 10⁻³ Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp³ fractions between 84% and 88%, and mass densities around 3.2 g/cm³ in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around −90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below −200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp³ bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp² fraction, leading to a reduction in film density to 2.7 g/cm³.     

Microstructure and mechanical properties of Mo/DLC nanocomposite films

Mo-doped diamond-like carbon (Mo/DLC) films were deposited on stainless steel and Si wafer substrates via unbalanced magnetron sputtering of molybdenum combined with inductively coupled radio frequency (RF) plasma chemical vapor deposition of CH₄/Ar. The effects of Mo doping and sputtering current on the microstructure and mechanical properties of the as-deposited films were investigated by means of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, atomic force microscopy (AFM), and nano-indentation. It was found that Mo doping led to increase in the content of sp² carbon, and hence decreased the hardness and elastic modulus of Mo/DLC films as compared with that of DLC films. The content of Mo in the films increased with the increasing sputtering current, and most of Mo reacted with C atoms to form MoC nanocrystallites at a higher sputtering current. Moreover, the Mo-doped DLC films had greatly decreased internal stress and increased adhesion to the substrate than the DLC film, which could be closely related to the unique nanocomposite structure of the Mo-doped films. Namely, the Mo/DLC film was composed of MoC nanoparticles embedded in the cross-linked amorphous carbon matrix, and such a kind of nanostructure was beneficial to retaining the loss of hardness and elastic modulus.     

Structure and properties of hard carbon films depending on heat treatment temperatures via polymer precursor

Phenylcarbyne polymer films were coated on silicon substrates and heat treated in 1 atm pressure of argon at various temperatures. The structural changes occurring during the heat treatment process of the polymer were investigated by Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The Raman and FTIR spectra features of the polymer showed a dependence on the heat treatment temperatures. At low temperatures (below 400°C), the Raman and IR spectra of the polymer were similar to those of the original polymer. The hardness and Young's modulus of the polymer films were below 1 and 50 GPa, respectively. With increasing temperature (above 400°C), thermal decomposition of the polymer occurred, resulting in structural changes of the polymer from soft amorphous hydrocarbon (400–600°C) phases to hard carbon phases (above 600°C). The hardness and Young's modulus increased from 1.5 and 65 GPa at 600°C to 9 and 120 GPa at 1000°C, respectively. It is assumed that the hard carbon film converted from the polymer might contain sp² and sp³ carbon phases; high temperature of heat treatment resulted in increasing sp² (glassy) carbon phase in the films.     

Effect of substrate bias voltage on the properties of diamond-like carbon thin films deposited by microwave surface wave plasma CVD

Diamond-like carbon (DLC) thin films were deposited on silicon and ITO substrates with applying different negative bias voltage by microwave surface wave plasma chemical vapor deposition (MW SWP-CVD) system. The influence of negative bias voltage on optical and structural properties of the DLC film were investigated using X-ray photoelectron spectroscopy, UV/VIS/NIR spectroscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. Optical band gap of the films decreased from 2.4 to 1.7 with increasing negative bias voltage (0 to − 200 V). The absorption peaks of sp³ CH and sp² CH bonding structure were observed in FT-IR spectra, showing that the sp²/sp³ ration increases with increasing negative bias voltage. The analysis of Raman spectra corresponds that the films were DLC in nature.     

Structural analysis of a-C:H and a-C:H:Si films under high-pressure and high-temperature by synchrotron X-ray diffraction

Amorphous carbon films have several outstanding tribology characteristics, including high hardness, surface smoothness, and low friction. Under tribological conditions, their surface is generally exposed to high-temperature and pressure. Although the structure of amorphous carbon films is likely changed by high temperature and pressure, there have been no reports on such structural changes of the films. To obtain information about their structural changes, synchrotron X-ray diffraction was used to analyze two kinds of amorphous carbon films, a-C:H and a-C:H:Si, under high-temperature and high-hydrostatic pressure conditions. Synchrotron X-ray diffraction was applied to films pressurized by a multi-anvil press installed in the PF-AR NE5C beamline at KEK at room temperature and at a high-temperature around 200 °C. The pair distribution functions derived by Fourier transformation of the obtained scattering intensity profiles showed that the sp²/sp³ ratios for both films decreased as the pressure increased and that the sp²/sp³ ratio for the a-C:H film increased as the temperature increased. This indicates that high-pressure creates sp³ stabilization in a-C:H and a-C:H:Si films while high-temperature creates sp² transition in a-C:H film. The sp²/sp³ ratio for the a-C:H:Si film did not change much even at high-temperature due to the high thermal-oxidative stability of a-C:H:Si.     

Sp content in ta-C films vs pulse bias width to the substrate: A correlative structural analysis

Tetrahedral amorphous carbon (ta-C) films were studied with and without applying fixed pulse bias and frequency at variable pulse widths in double bent Filtered Cathodic Vacuum Arc (FCVA) system. Both from Raman and X-ray photoelectron spectroscopy (XPS) analyses it has been observed that the ratio of sp³/sp² is maximal at pulse width of 15 µs with fixed pulse bias 3 kV and frequency 200 Hz. Increasing or decreasing pulse width from this threshold value accompanies the decreasing sp³ content in the film. It is also observed that with applying pulse bias width at said frequency and bias voltage G peak position was shifted to lower values and after reaching a minimum at 15 µs G peak position shifted to higher wave numbers. At the 15 µs pulse width, 3 kV bias voltage and 200 Hz frequency we have formed ta-C films with maximum sp³ content. This study clearly suggests that it is possible to tune the ta-C film's most important properties such as percentage of sp³ content, internal stress, and hardness by applying pulse width at particular frequency and bias voltage.     

Structure,electrochemical properties and functionalization of amorphous CN films deposited by femtosecond pulsed laser ablation

Amorphous carbon nitride (a-C:N) material has attracted much attention in research and development. Recently, it has become a more promising electrode material than conventional carbon based electrodes in electrochemical and biosensor applications. Nitrogen containing amorphous carbon (a-C:N) thin films have been synthesized by femtosecond pulsed laser deposition (fs-PLD) coupled with plasma assistance through Direct Current (DC) bias power supply. During the deposition process, various nitrogen pressures (0 to 10 Pa) and DC bias (0 to − 350 V) were used in order to explore a wide range of nitrogen content into the films. The structure and chemical composition of the films have been studied by using Raman spectroscopy, electron energy-loss spectroscopy (EELS) and high-resolution transmission electron microscopy (HRTEM). Increasing the nitrogen pressure or adding a DC bias induced an increase of the N content, up to 21 at.%. Nitrogen content increase induces a higher sp² character of the film. However DC bias has been found to increase the film structural disorder, which was detrimental to the electrochemical properties. Indeed the electrochemical measurements, investigated by cyclic voltammetry (CV), demonstrated that a-C:N film with moderate nitrogen content (10 at.%) exhibited the best behavior, in terms of reversibility and electron transfer kinetics. Electrochemical grafting from diazonium salts was successfully achieved on this film, with a surface coverage of covalently bonded molecules close to the dense packed monolayer of ferrocene molecules. Such a film may be a promising electrode material in electrochemical detection of electroactive pollutants on bare film, and of biopathogen molecules after surface grafting of the specific affinity receptor.     

Structure and mechanical properties of oxygen doped diamond-like carbon thin films

In this study, structure and mechanical properties of doped diamond-like carbon (DLC) films with oxygen were investigated. A mixture of methane (CH₄), argon (Ar) and oxygen (O₂) was used as feeding gas, and the RF-PECVD technique was used as a deposition method. The thin films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy (RS), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and a combination of elastic recoil detection analysis and Rutherford backscattering (ERDA-RBS). Nano-indentation tests were performed to measure hardness. Also, the residual stress of the films was calculated by Stoney equation. The XPS and ERDA-RBS results indicated that by increasing the oxygen in the feeding gas up to 5.6 vol.%, the incorporation of oxygen into the films' structure was increased. The ratio of sp² to sp³ sites was changed by the variation of oxygen content in the film structure. The sp²/sp³ ratios are 0.43 and 1.04 for un-doped and doped DLC films with 5.6 vol.% oxygen in the feeding gas, respectively. The Raman spectroscopy (RS) results showed that by increasing the oxygen content in doped DLC films, the amount of sp² CC aromatic bonds was raised and the hydrogen content reduced in the structure. The attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) confirmed the decrease of hydrogen content and the increase the ratio of CC aromatic to olefinic bonds. Hardness and residual stress of the films were raised by increasing the oxygen content within the films' structure. The maximum hardness (19.6 GPa) and residual stress (0.29 GPa) were obtained for doped DLC films, which had the maximum content of oxygen in structure, while the minimum hardness (7.1 GPa) and residual stress (0.16 GPa) were obtained for un-doped DLC films. The increase of sp³ CC bonds between clusters and the decrease of the hydrogen content, with a simultaneous increase of oxygen in the films' structure is the reason for increase of hardness and residual stress.