共查询到20条相似文献,搜索用时 15 毫秒
1.
S. Saini P. Mele H. Honda K. Matsumoto K. Miyazaki A. Ichinose 《Journal of Electronic Materials》2014,43(6):2145-2150
We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300–600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300–600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient ?65 μV/K and power factor 0.13 × 10?3 Wm?1 K?2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10?3 Wm?1 K?2 at 600 K, surpassing the best AZO film previously reported in the literature. 相似文献
2.
利用一维微光电子结构分析工具AMPS-1D(Analysis of Microelectronic and Photonic Structures-1D)研究了一种PIN结构的非晶硅基薄膜太阳电池的电流一电压特性。通过系统分析不同缺陷浓度对太阳电池光电特性的影响,探索了在不致严重影响器件性能情况下可容许的最高缺陷浓度。模拟结果表明,若半导体膜足够薄,在带边附近有很高的吸收系数,且具有满足一定条件的迁移率,则可使用含有相当高缺陷浓度(10^16~10^17cm^-3数量级)的非晶硅基薄膜制造出性能良好的太阳电池. 相似文献
3.
Kuznetsova V. S. Novikov S. V. Nichenametla C. K. Calvo J. Wagner-Reetz M. 《Semiconductors》2019,53(6):775-779
Semiconductors - The properties of Co–Si thin films grown by the thermal sintering of Co and Si layers are studied. Co and Si layers are produced by chemical vapor deposition. To form cobalt... 相似文献
4.
用特征矩阵法研究了单腔薄膜梳状滤波器的梳状滤波特性,结果表明:当腔两边的薄膜的周期数为6时,单腔薄膜梳状滤波器就有很好的梳状滤波功能;当腔两边的薄膜的厚度增大时,梳状峰的位置向长波方向移动,梳状峰的间距增大,梳状峰的个数减少;当腔的厚度(或折射率)增大时,梳状峰的间距减小,梳状峰的个数增多,特别是当腔的厚度大到一定程度后,单腔薄膜梳状滤波器也能满足密集波分复用的要求。 相似文献
5.
6.
7.
Sung-Do Kwon Byeong-kwon Ju Seok-Jin Yoon Jin-Sang Kim 《Journal of Electronic Materials》2009,38(7):920-924
Bismuth–antimony–telluride based thin film materials were grown by metal organic vapor phase deposition (MOCVD). A planar-type
thermoelectric device was fabricated with p-type Bi0.4Sb1.6Te3 and n-type Bi2Te3 thin films. The generator consisted of 20 pairs of p-type and n-type legs. We demonstrated complex structures of different conduction types of thermoelectric elements on the same substrate
using two separate deposition runs of p-type and n-type thermoelectric materials. To demonstrate power generation, we heated one side of the sample with a heating block and
measured the voltage output. An estimated power of 1.3 μW was obtained for the temperature difference of 45 K. We provide a promising procedure for fabricating thin film thermoelectric
generators by using MOCVD grown thermoelectric materials that may have a nanostructure with high thermoelectric properties. 相似文献
8.
9.
10.
在适当氧压下二极管式反应溅射镍靶制备NiOx薄膜,该薄膜无需长时间活化而直接在液体电解质KOH—H2O与LiCIO4-PC中均有稳定的电色性和牢固性,XPS分祈表明,O10具有两种结合能状态对应于Ni^2 和Ni^3 . 相似文献
11.
12.
A theoretical model is proposed to predict the Seebeck coefficient and the electrical conductivity for a polycrystalline thermoelectric
(TE) thin film under an external magnetic field. The model considers the distribution of electrons in the microstructure of
TE thin-film materials, taking the scattering effect of electrons at the grain boundary as the boundary condition for electron
transport in the grain. The transmission coefficient is introduced to describe the probability of electrons passing through
the grain boundary potential barrier, while the relationships between the Seebeck coefficient, the electrical conductivity,
and the transmission coefficient are studied. Furthermore, the results from the calculations of the Seebeck coefficient, the
electric conductivity, and the power factor of TE materials under various applied magnetic fields, transmission coefficients,
and grain sizes indicate that the applied external magnetic field has a very significant influence on the TE properties of
polycrystalline thin films. 相似文献
13.
14.
15.
16.
以阳离子表面活性剂——十六烷三甲基氯化铵(CTAC)作为添加剂,采用电沉积法在氧化铟锡玻璃基板上制备了ZnO薄膜。并研究了CTAC含量对阴极电流密度、结构、表面形貌、化学态和光学性能的影响。实验发现阴极电流密度和(002)择优取向随CTAC含量的增加而增加。电沉积氧化锌薄膜的表面形貌随CTAC含量的增加由小晶粒变为纳米棒,这表明CTAC在控制表面形貌方面有很重要的作用。X-射线光电子能谱表明Zn2p3/2,Zn2p1/2,O1s的峰位分别为1020.78eV、1046.88eV和530.8eV。CTAC对电沉积的影响可能是由于CTAC的吸附作用改变了不同晶面的表面能和生长动力学。此外,研究了ZnO薄膜的光学性能,结果表明当CTAC含量为3.0mmol/L时,薄膜具有较好的透光性和紫外发射性能。添加不同含量CTAC的ZnO薄膜禁带宽度介于3.27~3.52eV。 相似文献
17.
18.
19.
20.
利用电子束蒸发技术在常温下制备ITO透明导电膜,在这种条件下很难得到性能良好的透明导电膜,试图通过研究快速光热退火下退火温度、退火时间对其性能的影响,致力于在低温退火工艺下改善薄膜性能.通过对退火后样品禁带宽度的计算得出随着退火温度或退火时间的增大,禁带宽度逐渐增大;对样品的微结构分析发现随着退火温度的提高或退火时间的延长,样品的微结构致密性提高,各晶向面间距和晶格常数逐渐趋于标准的晶体;但退火温度过高或退火时间过长反而不利于透明导电膜性能的提高,所以选取合适的退火温度和退火时闻是光退火下透光性和导电性都得到提升的关键.在200℃的退火温度下,退火12 min可实现样品的透光率在可见光范围内达到82%,电阻率ρ=2.3×10-3Ω·cm. 相似文献