K3[Fe(CN)6]浓度对PEO法制备硫改性Fe3O4膜层结构和降解性能的影响

为了提高铁基类Fenton催化剂的活性,利用等离子体电解氧化法在钛合金上制备出了硫改性Fe3O4膜层类Fenton催化剂,研究了电解液中铁源K3[Fe(CN)6]的浓度对膜层的结构组成和降解苯酚性能的影响.采用SEM、EDS和XRD对催化剂的表面形貌和相组成进行了表征,以苯酚为目标降解物评价其类Fenton催化活性.结果 发现:增加电解液中K3[Fe(CN)6]的浓度,膜层内Fe3O4组分增多,含硫基团减少,膜层表面孔洞的孔径大小和数目也会发生改变.苯酚降解试验表明硫改性Fe3O4膜层在近中性条件下具有良好的催化活性.     

封面图片说明

正本期的封面图片出自文章"钛网表面Fe_3O_4/FeS_2膜层制备及其类芬顿降解苯酚研究",是由哈尔滨工业大学姚忠平副教授等人对利用铁基固定化纳米结构膜层材料用于类芬顿降解苯酚进行的研究总结。酚类有机物因其高毒性、强致癌性而被国内外许多组织机构,如美国环保署、欧盟等列入首要控制污染物黑名单之中。为解决严峻的环境污染问题,迫切需要对含有高毒性、持久性有机污染物     

水热法合成TiO2/Fe3+光催化剂及其氧化降解亚甲基蓝

以硫酸钛为钛源,采用水热法合成了TiO2/Fe3+光催化剂,利用XRD对产物晶体结构进行表征,研究在紫外光(365nm)照射下用合成的TiO2/Fe3+粉末催化降解亚甲基蓝的效果,分析了亚甲基蓝初始浓度、TiO2/Fe3+用量、掺Fe3+量、光照时间和溶液初始pH值等因素的影响;考察了溶液初始pH值对TiO2/Fe3+粉末的吸附性能和光催化活性的影响。结果表明:合成的TiO2/Fe3+晶体为锐钛矿型(A-TiO2)。在4mg/L的亚甲基蓝溶液(pH=8)中,加入掺Fe3+量0.8%(摩尔分数)合成的TiO2/Fe3+粉末使其用量为0.6g/L,室温下紫外光照反应6h,亚甲基蓝的降解率达到98.2%。在上述优化条件下,当溶液的pH<6时,催化剂对亚甲基蓝的吸附量和光催化效率均较低,且二者随pH升高而显著增加;当pH≥6时,对亚甲基蓝的吸附作用较大,因此较明显地提高了光催化活性。     

共沉淀法制备纳米Fe3O4及其对橙黄Ⅱ的降解

通过共沉淀法制备Fe3O4纳米颗粒,采用X射线衍射(XRD)、扫描电子显微镜(SEM)和比表面孔隙分析(BET)对样品进行表征。以合成的纳米Fe3O4催化H2O2氧化降解橙黄Ⅱ,考察了共沉淀法制备过程中的Fe2+/Fe3+的摩尔比、反应温度、pH值、Fe离子浓度等因素对Fe3O4催化性能的影响。结果表明在Fe2+/Fe3+的摩尔比为3∶4、反应温度80℃、pH值为10、Fe离子浓度为0.1mol·L-1的条件下制备出的Fe3O4纳米颗粒催化活性最高,其粒径为20nm左右。并且未干燥的磁流体对橙黄Ⅱ的降解效率明显高于Fe3O4粉体。     

负载磷钼杂多酸/La0.7Ca0.3Fe0.25Co0.75O3/聚吡咯的制备及光催化性能研究

采用甘氨酸-硝酸盐燃烧法成功制备了La0.7Ca0.3Fe0.25Co0.75O3钙钛矿型复合氧化物,以(NH4)2S2O8为氧化剂,运用化学氧化法合成La0.7Ca0.3Fe0.25Co0.75O3/聚吡咯薄膜,然后通过静电自组装方法制备了一种新的表面负载修饰型复合光催化剂La0.7Ca0.3Fe0.25Co0.75O3/PPy/PMO12。采用XRD、SEM、FT-IR对催化剂的物化结构进行了表征。光催化性能测试是以亚甲基蓝染料的水溶液为降解目标,结果表明,PMo12的负载修饰改进了La0.7Ca0.3-Fe0.25Co0.75O3/PPy光催化剂的催化活性。     

Pt/Fe2O3/TiO2的制备、表征及其光催化活性研究

报道了担载不同贵金属或过渡金属氧化物的TiO2催化剂对空气中微量甲醛的光催化氧化的研究结果.实验发现,TiO2上担载Fe2O3或Pt时对甲醛均有较高的光催化氧化活性.同时担载双组分的光催化剂Pt/Fe2O3/TiO2,由于2种组分的协同作用,具有更高的光催化活性.研究了催化剂制备因素、催化剂的结构及表面特性对催化活性的影响.     

Fe3O4/MnO2磁性复合氧化物催化剂的制备及性能

具有磁性的非均相催化剂价格低廉、低污染、高能效、容易从溶液中分离出来。经过水热合成法合成的Fe₃O₄/MnO₂磁性复合氧化物催化剂在活化过一硫酸盐（2KHSO₅·KHSO₄·K₂SO₄）产生硫酸根自由基（SO₄-）降解水中有机污染物表现出了优良的性能。把不同质量的磁性Fe₃O₄微球与线状的MnO₂负载到一起,合成三种Fe₃O₄:MnO₂质量比分别为1:3、2:3、1:1的Fe₃O₄/MnO₂催化剂,经过XRD、SEM和TEM表征,表明这两种金属氧化物负载到一起。对比不同Fe₃O₄:MnO₂质量比的Fe₃O₄/MnO₂磁性复合氧化物催化剂活化2KHSO₅·KHSO₄·K₂SO₄的活性,发现Fe₃O₄/MnO₂（2:3）催化剂催化活性最高。通过考察不同因素对Fe₃O₄/MnO₂（2:3）催化活性的影响得出,水中罗丹明B（Rh B）降解的最佳条件为10 mg/L Rh B、0.4 g/L Fe₃O₄/MnO₂催化剂、0.3 g/L 2KHSO₅·KHSO₄·K₂SO₄、pH=8。Fe₃O₄/MnO₂（2:3）磁性复合氧化物催化剂经过3次循环利用后,催化活性没有明显下降。SO₄-在降解水中Rh B起主要作用。      

可见光响应Pt沉积La2O3/TiO2制备及其对甲苯的光热催化去除

以钛酸四丁酯和硝酸镧为原料,采用溶胶—凝胶法制备La2O3/TiO2,通过光沉积法在La2O3/TiO2表面负载纳米Pt粒子.采用XPS、FTIR、XRD、DRS、TEM和低温氮物理吸附对光催化剂的晶体结构、光谱特征和表面结构进行表征.考察了催化剂在可见光下对甲苯的去除性能和温度对催化剂去除甲苯的影响.结果表明,沉积的Pt以单质和吸附氧的形式存在,其中以吸附氧的形式为主.Pt的掺入没有引起TiO2相结构的变化,减小了晶粒尺寸并增大了催化剂的比表面积.纳米Pt均匀地分布在La2O3/TiO2上,尺寸分布比较均一,大约为5～10nm.Pt-La2O3/TiO2的表面羟基官能团伸缩振动明显增强,比TiO2和La2O3/TiO2具有更高的可见光催化活性.Pt-La2O3/TiO2对甲苯的降解率,随着温度的升高而增大,产生了与光催化作用平行的热催化作用.气相甲苯光热催化过程不是光催化与热催化的简单叠加,而是存在协同作用.     

Fe(III)/rGO/Bi2MoO6复合光催化剂制备及光催化芬顿协同降解苯酚

光催化-芬顿技术耦合可高效降解有机污染物。本研究采用溶剂热法制备了Fe(III)掺杂rGO/Bi₂MoO₆复合催化剂(Fe(III)/rGO/Bi₂MoO₆), 通过外加H₂O₂构建了光催化-芬顿协同体系, 可见光照射3 h后对苯酚的降解率(82%)远高于单独光催化(18%)或芬顿反应(48%), 进一步优化条件对苯酚可实现完全降解。这主要是通过Fe得失电子实现价态的转变, 并以此作为桥梁实现光催化-芬顿的协同作用。同时石墨烯的优异导电性能不仅克服了光催化中光生电子空穴难以分离的问题, 而且促进了Fe³⁺/Fe²⁺的循环反应, 促使芬顿反应产生更多的羟基自由基(?OH), 进一步提高了苯酚的降解效率。实验考察了Fe(III)含量、催化剂投加量、H₂O₂含量以及pH等因素对协同降解效果的影响。淬灭实验证明?OH是协同降解体系中最主要的活性物种, ?O₂^-和h⁺对降解活性也会产生一定的影响, 结合实验结果提出了Fe(III)/rGO/Bi₂MoO₆光催化-芬顿协同降解苯酚的机理。     

不同催化剂可见光催化H2O2降解莠去津的性能研究

以锐钛矿型TiO2(记为A)以及Fe3+改性后的锐钛矿型TiO2(记为Fe-A)为光催化剂,以内分泌干扰物莠去津为目标污染物,研究了H2O2加入前后对两种不同催化剂可见光催化降解莠去津的影响,及其可见光催化降解莠去津的反应机理。结果表明:在H2O2存在的条件下,锐钛矿型TiO2可见光催化降解莠去津的光催化性能有了一定的提高,而Fe3+改性过后的锐钛矿型TiO2可见光催化降解莠去津的性能却得到显著提高,反应1h,降解率便达到98%。形成这种结果的原因可以初步判定为前者是H2O2吸附于锐钛矿型TiO2表面形成特殊结构,产生的O2-.主要起氧化降解作用,而后者则由于其溶出的Fe3+与H2O2作用在可见光下发生光芬顿反应,进而对莠去津起到良好的降解效果。     

Microstructural study of YBa2Cu3O7/SrTiO3/YBa2Cu3O7 heteroepitaxial trilayer films grown on (100) SrTiO3 substrates

Detailed transmission electron microscopic study has been carried out on heteroepitaxial YBa₂Cu₃O₇/SrTiO₃/YBa₂Cu₃O₇ trilayer thin films grown on (100)SrTiO₃ substrates prepared by DC and RF magnetron sputtering. The microstructural results showed the existence of somea-axis-oriented YBCO grains 20–90 nm wide in thec-axis-oriented YBCO matrix. Some of thea-axis grains in the lower YBCO thin film layer have protruded into the above SrTiO₃ layer, which may cause short circuit between the two YBCO superconducting layers. This is unsuitable for the application of trilayer thin films for microelectronic devices. The defects on the surface of the substrates would also influence the growth quality of the YBCO thin films.     

Elastic modulus and hardness of CaTiO3, CaCu3Ti4O12 and CaTiO3/CaCu3Ti4O12 mixture

Three ceramic systems, CaTiO₃ (CTO), CaCu₃Ti₄O₁₂ (CCTO) and intermediate nonstoichiometric CaTiO₃/CaCu₃Ti₄O₁₂ mixtures (CTO.CCTO), were investigated and characterized. The ceramics were sintered at 1100 °C for 180 min. The surface morphology and structures were investigated by XRD and SEM. Elastic modulus and hardness of the surfaces were studied by instrumented indentation. It was observed that CCTO presented the higher mechanical properties (E = 256 GPa, hardness = 10.6 GPa), while CTO/CCTO mixture showed intermediate properties between CTO and CCTO.     

Variations of microstructures and electrical properties of Bi4Ti3O12/SrTiO3/(La0.5, Sr0.5)CoO3/MgO epitaxial thin films by annealing

Epitaxial thin films of a heterostructure with Bi₄Ti₃O₁₂(BIT)/SrTiO₃(ST) were successfully grown with a bottom electrode consisting of La_0.5Sr_0.5CoO₃(LSCO) on MgO(001) substrates using pulsed laser deposition. The grown BIT and ST (001) planes were parallel to the growth surface with the orientation relationship of BIT <110>//ST <010>. In the as-deposited film, the BIT (001) plane appeared to expand to relieve a lattice mismatch with the ST (001) plane. However, annealing for 20-40 min induced the BIT (001) plane to contract horizontally with its c-axis expanding, which was associated with a local perturbation in the layer stacking of the BIT structure. This structural distortion was reduced in the film annealed for 1 h, with restoration of the periodicity of the layer stacking. Correspondingly, the dielectric constant of the as-deposited film was increased from 292 to 411 by annealing for 1 h. In parallel, the film was paraelectric but became more ferroelectric, with the remanent polarization and the coercive field changing from 0.1 μC/cm² and 14 kV/cm to 1.7 μC/cm² and 69 kV/cm, respectively.     

Effect of Ca Substitution on the Superconductivity of La2.5Y0.5CaBa3(Cu0.88Fe0.12)7Oz

The structural and superconducting properties of single-phase La_2.5–y Y_0.5Ca_1+y Ba₃ (Cu_0.88Fe_0.12)₇O _z (LYCaBCuFe) (y= 0.0–1.0) compounds with triple perovskite structure are investigated using X-ray diffraction, resistivity, a.c. susceptibility, and oxygen content measurements. Increasing Ca substitution for La resulted in a decrease in unit cell axes and volume. T _c ^R=0 shows a marginal increase from 31 K to 37 K for y = 0.0–0.21 and thereafter it decreases with increasing y leading to zero T _c ^R=0 at y 0.84. This shows that the suppression of T _c from 80 K to 31 K by Fe doping at x = 0.12 La_2.5Y_0.5CaBa₃(Cu_1–x Fe _x )₇O _z cannot be compensated by appropriate hole doping with Ca in LaYCaBCuFe.     

纳米-Al2O3/SiO2加入量对MgO-Al2O3-SiO2复相陶瓷烧结机理的影响

为了探究纳米-Al₂O₃/SiO₂加入量对MgO-Al₂O₃-SiO₂复相陶瓷烧结行为的作用机理。以微米级MgO、纳米级Al₂O₃和SiO₂为主要原料制备陶瓷基复合材料。通过XRD和 SEM等检测手段对烧后试样的物相组成和微观结构进行测试与表征,重点研究Al₂O₃/SiO₂的加入对复相陶瓷物相组成、微观结构及烧结性能的影响。结果表明:随着Al₂O₃/SiO₂加入量的增大,试样烧后相对密度和烧后线变化率呈先增大后减小再增大的趋势,加入15%Al₂O₃/SiO₂(质量分数)的试样经1 500 ℃烧结后,其相对密度可以达到94%。引入的Al₂O₃/SiO₂与基体中的MgO生成镁铝尖晶石与镁橄榄石相,原位反应伴随的体积膨胀,抵消部分烧结过程中的体积收缩。Al₂O₃/SiO₂加入量为75%(质量分数)的试样经1 400 ℃烧结后,基体中有大量堇青石相生成,随着煅烧温度提高到1 500 ℃,堇青石分解所产生的高温液相促进了试样的烧结收缩。     

Chemical vapor deposition of NiSi using Ni(PF3)4 and Si3H8

NiSi_x films were deposited using chemical vapor deposition (CVD) with a Ni(PF₃)₄ and Si₃H₈/H₂ gas system. The step coverage quality of deposited NiSi_x was investigated using a horizontal type of hot-wall low pressure CVD reactor, which maintained a constant temperature throughout the deposition area. The step coverage quality improved as a function of the position of the gas flow direction, where PF₃ gas from decomposition of Ni(PF₃)₄ increased. By injecting PF₃ gas into the Ni(PF₃)₄ and Si₃H₈/H₂ gas system, the step coverage quality markedly improved. This improvement in step coverage quality naturally occurred when PF₃ gas was present, indicating a strong relationship. The Si/Ni deposit ratio at 250 °C is larger than at 180 °C. It caused a decreasing relative deposition rate of Ni to Si. PF₃ molecules appear to be adsorbed on the surface of the deposited film and interfere with faster deposition of active Ni deposition species.     

Superconductivity at 103 K in CdBa2(Ca0.7Y0.3)Cu2Oy

A cadmium analogue of the mercury system with nominal composition CdBa₂(Ca_1–xY_x)Cu₂O_y has been synthesized. Thex=0 samples contain about 12 vol.% of the 1212 phase but are not superconducting. Thex=0.3 samples are superconducting atT _on = 103 K. The EDX analysis of 18 microcrystals shows a broad cationic distribution of the different components. The observed broad superconducting transition is attributed to the variousT _c of the different microcrystals.     

Effect of pulse duration on characteristics of modulated radio-frequency SiH4/N2/NH3 discharges

A one-dimensional fluid model is developed to investigate the behavior of plasma in the afterglow of pulsed voltage modulated SiH₄/N₂/NH₃ discharges at radio-frequency (400 kHz), which are used for the deposition of silicon nitride (SiN_x) films. The model incorporates particle balances, electron energy balance, and Poisson's equation, allowing the equations solved self-consistently. The current work is an attempt to understand the effect of duty cycle on the characteristics of silicon nitride (SiN_x) films. Therefore, the influences of duty cycle on the plasma density, electron temperature, and ion energy at the powered electrode were carefully discussed. We find that by decreasing the duty cycle, the negative ions can be able to escape during the off-time, and the positive ion energy is effectively decreased. On the other hand, the positive ion density is slightly decreased.     

Thermoluminescence properties of Ce-doped LiSr4(BO3)3 phosphor

Borates LiSr₄(BO₃)₃ were synthesized by high-temperature solid-state reaction. The thermoluminescence (TL) and some of the dosimetric characteristics of Ce³⁺-activated LiSr₄(BO₃)₃ were reported. The TL glow curve is composed of only one peak located at about 209 °C between room temperature and 500 °C. The optimum Ce³⁺ concentration is 1 mol% to obtain the highest TL intensity. The TL kinetic parameters of LiSr₄(BO₃)₃:0.01Ce³⁺ were studied by the peak shape method. The TL dose response is linear in the protection dose ranging from 1 mGy to 1 Gy. The three-dimensional thermoluminescence emission spectra were also studied, peaking at 441 and 474 nm due to the characteristic transition of Ce³⁺.