Vertically standing Ge nanowires on GaAs(110) substrates

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380?°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the [Formula: see text] direction. Using this unique property, vertical [Formula: see text] Ge nanowires epitaxially grown on GaAs(110) surface are realized. In addition, these Ge nanowires exhibit minimal tapering and uniform diameters, regardless of growth temperatures, which is an advantageous property for device applications. Ge nanowires growing along the [Formula: see text] directions are particularly attractive candidates for forming nanobridge devices on conventional (100) surfaces.     

Effect of interfacial reaction rate on the morphogenesis of nanostructured coatings in a simulated electrodeposition process

Brownian dynamics simulations (BDSs) are performed to investigate the influence of interfacial electrochemical reaction rate on the evolution of coating morphology on circular fibres. The boundary condition for the fluid phase concentration, representing the balance between the rates of interfacial reaction and transport of ions by bulk diffusion, is incorporated into the BDS by using a reaction probability, P(s). Different modes of growth, ranging from diffusion limited ([Formula: see text]) to reaction controlled [Formula: see text], are studied. It is found that, consistent with experimental observations, two distinct morphological regimes exist, with a dense and uniform structure for [Formula: see text] (reaction limited deposition (RLD)) and an open and porous one as [Formula: see text] (diffusion limited deposition (DLD)). An analysis of the fractal dimension indicates that this morphological transition occurs at P(s)≈0.3. Long-time power-law scalings for the evolution of thickness [Formula: see text] and roughness (ξ) of the coating exist, i.e.?[Formula: see text] with 0.86≤α≤0.91 and 0.56≤β≤0.93 for 0.01≤P(s)≤1. These values are different from those reported for sequential, pseudo-time lattice simulations on planar surfaces, signifying the importance of multiparticle dynamics and surface curvature. The internal structure and porosity of the coating are characterized quantitatively by the radial density profile, pair correlation function, two-point probability function, void distribution function and pore area distribution. For RLD the radial density, ρ(n), remains nearly constant, while for DLD ρ(n) follows a power law, [Formula: see text]. The coating exhibits short ranged order in the RLD regime while a long range order is created by DLD. The void distribution function becomes broader with increasing P(s), indicating that in the RLD regime the coating consists of small and spherical pores, while in the DLD regime large and elongated pores are obtained. The pore area distribution shows narrower distributions in DLD for small pores, while the area of the largest pore increases by nearly three orders of magnitude as one moves from the RLD to the DLD regime. Such morphological diversity could be potentially exploited for applications such as percolation, catalysis and surface protection.     

Zn(1-x)Mg(x)Te nanowires grown by solid source molecular beam epitaxy

This paper reports on the epitaxial growth of single-crystalline ternary Zn(1-x)Mg(x)Te nanowires covering a broad compositional range of molar fraction 0≤x≤0.75. The nanowires were grown on (100), (110), and (111) GaAs substrates using a vapor-liquid-solid mechanism. Solid source molecular beam epitaxy and an Au-based nanocatalyst were used for these purposes. The composition of nanowires can be adjusted by changing the ratio of Mg to Zn molecular beam fluxes. Electron microscopy images show that the nanowires are smooth and slightly tapered. The diameters of the obtained nanowires are from?30 to 70?nm and their length is around 1?μm. X-ray diffraction analysis and transmission electron microscopy reveal that the nanowires have a zinc-blende structure throughout the whole range of obtained compositions, and have a [Formula: see text] growth axis. The Raman measurements reveal both the expected splitting and shift of phonon lines with increasing Mg content, thus proving the substitutional incorporation of Mg into metallic sites of the ZnTe lattice.     

Distribution of cations in nanosize and bulk Co-Zn ferrites

The structural and magnetic properties of Co(1-x)Zn(x)Fe2O4 ferrites (Co-Zn ferrites) are investigated in a narrow compositional range around x = 0.6, which is of interest because of applications in magnetic fluid hyperthermia. The study by x-ray and neutron diffraction, M?ssbauer spectroscopy and magnetization measurements is done on nanoparticles prepared by the coprecipitation method and bulk samples sintered at high temperatures. In spite of the known preference of Zn2+ for tetrahedral (A) sites and Co2+ for octahedral [B] sites, the cations are distributed nearly evenly over the two sites of spinel structure and there is also a variable number of [B] site vacancies (see text), making cobalt ions trivalent. In particular for x = 0.6, the cationic distribution is refined to [Formula: see text] and [Formula: see text] for the 13 nm particles (T(C) = 335 K) and bulk sample (T(C) = 351 K), respectively.     

Longer InN phonon lifetimes in nanowires

We present a Raman scattering study of the anharmonic phonon decay of the [Formula: see text], [Formula: see text] and E(1)(LO) phonons in InN nanowires over the 80-400?K temperature range. While the temperature-dependent anharmonic decay in the nanowires is similar to that found for bulk InN, the background contribution to the phonon lifetime is strongly reduced as a result of the improved crystalline quality. High-resolution measurements reveal a remarkably long lifetime of the [Formula: see text] mode. From the comparison between the [Formula: see text] frequencies measured in the nanowires with those of the thin film we obtain the deformation potentials for the [Formula: see text] mode.     

Size effects on Raman spectra of small CdSe nanoparticles in polymer films

The results of a resonant Raman scattering (RRS) study of polymer-stabilized colloidal CdSe nanoparticles (NPs) are reported. The size-selective nature of the RRS is demonstrated by analysing the NP ensembles with different average size [Formula: see text] and size distribution Δd using a set of excitation wavelengths. The effect of size selection on the estimation of [Formula: see text] and Δd values from the RRS spectra is discussed, as well as some peculiarities of RRS on surface optical phonons. From the experimentally observed small variation of the I(2LO)/I(LO) ratio for 2-5?nm NPs a minor effect of [Formula: see text] on the electron-phonon coupling strength in this [Formula: see text] range is supposed.     

Analogous mechanical behaviors in [Formula: see text] and [Formula: see text] directions of Cu nanowires under tension and compression at a high strain rate

This study analyzes the plastic deformation on the atomic scale of Cu nanowires (NWs) with [Formula: see text] and [Formula: see text] orientations during uniaxial tension and compression, using a molecular dynamic simulation. The maximum local stress (MLS) method is employed to evaluate mechanical behavior during deformation. Following yielding, the flow stress strongly depends on the variation in the degree of orientation caused by twinning. Both the tension of the [Formula: see text] NW and the compression of the [Formula: see text] NW cause twin deformation and consequent geometrical softening. In contrast, the compression of the [Formula: see text] NW and the tension of the [Formula: see text] NW form twin bands and cause geometrical hardening. These behaviors result in the stress-strain curves that reveal the pseudo-skew-symmetry characteristic. With respect to the difference between the critical resolved shear stress (τ(c)) associated with the distinct orientations, τ(c) depends strongly on the surface critical resolved stress (τ(sc)). Under tension, τ(sc) depends on the degree of lattice distortion. A larger lattice distortion (pre-tensile stress) corresponds to higher τ(sc). However, under compression, a geometrical factor can be used to describe the difference in τ(sc) between the different orientations. A larger geometrical factor corresponds to a larger τ(sc).     

Assembly behavior and monolayer characteristics of OH-terminated alkanethiol on Au(111): in situ scanning tunneling microscopy and electrochemical studies

Self-assembled monolayers (SAMs) of 6-mercapto-1-hexanol (MHO) on an Au(111) electrode were prepared in an electrochemical system. The adsorption behavior of MHO and the time-dependent organization of the SAM were investigated by in situ scanning tunneling microscopy (STM) and cyclic voltammetry (CV). The results show that a potential higher than 0.28?V (relative to RHE) is required to induce the adsorption of MHO. At 0.28?V, the MHO molecules adsorb in a flat-lying orientation, forming an ordered striped phase with a molecular arrangement of ([Formula: see text]). However, the adlayer is not stable at this potential. The adsorbed striped phase may recover to the herringbone feature of the gold substrate due to the desorption of adsorbed MHO. At a higher potential (0.35?V), the adlayer becomes stable and can undergo a phase evolution from the striped phase to a condensed structure, identified as c([Formula: see text]). This structure can also be described as a c(4 × 2) superlattice of a [Formula: see text] hexagonal adlattice. The surface coverage of the MHO SAM is identical to the saturated structure of an 11-mercapto-1-undecanol (MUO) SAM reported in a previous work, [Formula: see text]. However, the STM image of MHO adlayer shows a modulation in intensity, reflecting the presence of various conformations of adsorbed molecules. This result is attributed to the shorter chain length of MHO, which gives a weaker?van der Waals interaction between adsorbed molecules. This effect also results in a higher charge permeability across the adlayer and a lower striping potential to an MHO SAM.     

Nanostructural control in solution-derived epitaxial Ce(1-x)Gd(x)O(2-y) films

A novel mechanism based on aliovalent doping, allowing fine tuning of the nanostructure and surface topography of solution-derived ceria films, is reported. While under reducing atmospheric conditions, non-doped ceria films are inherently polycrystalline due to an interstitial amorphous Ce(2)C(3) phase that inhibits grain growth, a high quality epitaxial film can be achieved simply by doping with Gd(3+) cations. Gd(3+) [Formula: see text] Ce(4+) substitutions within the lattice are accompanied by charge-compensating oxygen vacancies throughout the volume of the crystallites acting as an efficient vehicle to reduce the barrier for grain boundary motion caused by interstitial Ce(2)C(3). In this way, the original nanostructure is self-purified by pushing the amorphous Ce(2)C(3) phase towards the free surface of the film. Once a full epitaxial cube-on-cube oriented ceria film is obtained, its surface morphology is dictated by the interplay between faceting on low energy {110} and/or {111} pyramidal planes and truncation of those pyramids by (001) ones. The development of the latter requires the suppression of their polar character which is thought to be achieved by charge compensation between the dopand and oxygen along [Formula: see text] directions.     

Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)

We have determined the in-plane orientation of GaN nanowires relative to the Si (111) substrate on which they were grown. We used x-ray diffraction pole figure measurements to evidence two types of crystallographic orientation, all the nanowires having [Formula: see text] lateral facets. The proportion of these two orientations was determined and shown to be influenced by the pre-deposition of Al(Ga)N intermediate layers. In the main orientation, the GaN basal [Formula: see text] directions are aligned with the [Formula: see text] directions. This orientation corresponds to an in-plane coincidence of GaN and Si lattices.     

Implementation of Electrochemically Synthesized Silver Nanocrystallites for the Preferential SERS Enhancement of Defect Modes on Thermally Etched Graphite Surfaces

Highly oriented pyrolytic graphite (HOPG) surfaces, on which atomically well-defined roughness has been introduced via high-temperature gasification reactions, are investigated by noncontact mode atomic force microscopy (NC-AFM) and Raman spectroscopy both before and after the electrochemical deposition of silver nanocrystallites on these surfaces. Exposure of freshly cleaved HOPG surfaces to an O(2)-rich ambient at 650 °C for a few minutes caused the formation of 1-monolayer-deep, circular etch pits on the HOPG basal plane surface. Silver nanocrystallites were electrochemically deposited onto these etched surfaces at two coverages: 0.5 mC cm(-)(2) (or 5 nmol of Ag(0) cm(-)(2)) and 2.4 mC cm(-)(2) (25 nmol of Ag(0) cm(-)(2)). At the lower coverage, NC-AFM images revealed that silver decorated only the circumference of the circular etch pits, forming a uniform annular ring with an apparent diameter of 200-250 ? and a height of ～15 ?. At the higher silver coverage, an increase in the height but not the diameter of this annulus was observed, and additional silver nanostructures [Formula: see text] having dimensions of 300-350 ? diameter and 15 ? height [Formula: see text] were observed on atomically smooth regions of the graphite basal plane. The Raman spectroscopy of these surfaces was investigated and compared with spectra for nanocrystallite-modified but unetched HOPG basal plane surfaces and thermally etched surfaces on which no silver was deposited. For for thermally etched HOPG surfaces at either silver coverage, SERS-augmented Raman spectra were obtained in which defect modes of the graphite surface [Formula: see text] derived from "finite" graphite domains at the surface [Formula: see text] were strongly and preferentially enhanced. In addition, an enhanced band near 2900 cm(-)(1) was assigned to ν(OH) from carboxylate moieties present at step edges based on the basis of the observed pH dependence of the enhancement.     

NaCl multi-layer islands grown on Au(111)-([Formula: see text]) probed by scanning tunneling microscopy

The growth of multi-layer NaCl islands on Au(111)-([Formula: see text]) surfaces was investigated using scanning tunneling microscopy (STM). We observed that the aspect of the NaCl islands drastically differs depending on the tunneling conditions. It is therefore possible to observe the layers forming an NaCl island or to image the gold reconstruction below the first NaCl layer. Atomically resolved STM images obtained on the first NaCl layer demonstrate that NaCl grows as an epitaxial crystalline film on Au(111)-([Formula: see text]). STM images also suggest that some NaCl layers can be non-crystalline.     

Adsorption, manipulation and self-assembling of TBrPP-Co molecules on a Ag/Si(111) surface by scanning tunnelling microscopy

Individual adsorption and two-dimensional assembling of 5,10,15,20-tetrakis-(4-bromophenyl)-porphyrin-Co (TBrPP-Co) molecules on a Si(111)-[Formula: see text] Ag reconstructed surface have been studied using low-temperature scanning tunnelling microscopy (STM). All the isolated molecules are observed in a planar shape with slight distortion. The isolated molecules can be controllably rotated with an STM tip to the orientation along the trigonal lattice ([Formula: see text] direction) of the substrate. With an increased coverage (0.07?ML) and appropriate annealing, the molecules assemble to form three types of ordered phase. The long-range ordered structures, however, disappear at higher coverage (0.75?ML).     

High-resolution imaging in a deep turbid medium based on an ultrasound-switchable fluorescence technique

The spatial resolution of fluorescence imaging techniques in deep optically turbid media such as tissues is limited by photon diffusion. To break the diffusion limit and achieve high-resolution and deep-tissue fluorescence imaging, a fundamentally different method was demonstrated based on a concept of ultrasound-switchable fluorescence. The results showed that a small fluorescent tube with a diameter of ～180?μm at a depth of ～20?mm in an optical scattering medium ([Formula: see text] and [Formula: see text] cm(-1)) can be clearly imaged with a size of ～260?μm. The depth-to-resolution ratio is shown to be about one order of magnitude better than other deep-tissue fluorescence imaging techniques.     

Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates

The growth of Sb nanowires on GaSb(111)A substrates is studied by in?situ azimuthal scan reflection high-energy electron diffraction (ARHEED). Bulk and layer contributions can be distinguished in the ARHEED transmission pattern through the Sb nanowires. The three-dimensional structure of the growing Sb nanowires is identified by post-growth atomic force microscopy (AFM) and x-ray diffraction (XRD). The lattice match of the Sb crystal along the [Formula: see text] and the GaSb crystal along [Formula: see text] directions lead to a preferential orientation of the Sb nanowires. The Sb adsorption and desorption kinetics is studied by thermal desorption spectroscopy.     

Pt-Pd alloy nanoparticle-decorated carbon nanotubes: a durable and methanol tolerant oxygen reduction electrocatalyst

We describe the decoration of multiwalled carbon nanotubes (MCNTs) with Pt-Pd alloy nanoelectrocatalysts of three different compositions and their electrocatalytic performance toward the oxygen reduction reaction (ORR). The decoration of the MCNTs involves polymer-assisted impregnation of metal precursors [Formula: see text] and [Formula: see text] and the subsequent reduction of the impregnated precursors by a modified polyol route. The composition of the catalyst was controlled by tuning the molar ratio of the precursors during their impregnation. Electron probe microscopic analysis shows that the catalysts have compositions of Pt(46)Pd(54,) Pt(64)Pd(36) and Pt(28)Pd(72). The Pt(46)Pd(54) and Pt(64)Pd(36) catalysts have truncated octahedral and icosahedral shapes with a size ranging from 8 to 10?nm. On the other hand, the catalyst of Pt(28)Pd(72) composition has a spherical/quasispherical shape with a size distribution of 1-2?nm. The XPS measurement confirms the signature of metallic Pt and Pd. The Pt(46)Pd(54) catalyst has a pronounced electrocatalytic activity toward the ORR with a specific and mass activity of 378 [Formula: see text] and [Formula: see text], respectively at 0.8?V. Moreover, the Pt(46)Pd(54) nanoelectrocatalyst is highly durable and it retains its initial catalytic activity even after 1000 extensive cycles. Interestingly, this catalyst has a very high tolerance toward methanol and it does not favor the oxidation of methanol in the potential window of 0.1-1.4?V. The electrocatalytic activity of the alloy electrocatalyst is compared with commercially available Pt black and MCNT-supported spherical Pt nanoparticles. The catalytic activity of the Pt(46)Pd(54) nanoelectrocatalyst is higher than the other catalysts. The Pt(46)Pd(54) catalyst outperforms the electrocatalytic activity of all other catalysts.     

Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors

In this study, we report on the formation of a single-crystalline Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructure and its field effect characteristics by controlled reaction between a supercritical fluid-liquid-solid (SFLS) synthesized Ge nanowire and Ni metal contacts. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies reveal a wide temperature range to convert the Ge nanowire to single-crystalline Ni(2)Ge by a thermal diffusion process. The maximum current density of the fully germanide Ni(2)Ge nanowires exceeds 3.5 × 10(7) A cm(-2), and the resistivity is about 88 μΩ cm. The in situ reaction examined by TEM shows atomically sharp interfaces for the Ni(2)Ge/Ge/Ni(2)Ge heterostructure. The interface epitaxial relationships are determined to be [Formula: see text] and [Formula: see text]. Back-gate field effect transistors (FETs) were also fabricated using this low resistivity Ni(2)Ge as source/drain contacts. Electrical measurements show a good p-type FET behavior with an on/off ratio over 10(3) and a one order of magnitude improvement in hole mobility from that of SFLS-synthesized Ge nanowire.     

Unique electronic band structures of hydrogen-terminated [Formula: see text] silicon nanowires

Band structure mutation from an indirect to a direct gap is a well-known character of small hydrogen-terminated [Formula: see text] and [Formula: see text] silicon nanowires (SiNWs), and suggests the possible emission of silicon. In contrast, we show that hydrogen-terminated [Formula: see text] SiNWs consistently present indirect band gaps even at an extremely small size, according to our calculations using density functional theory. Interestingly, the band gap of [Formula: see text] SiNWs shows a quasi-direct feature as the wire size increases, suggesting the possibility of using medium SiNWs in optoelectronic devices. This result also indicates that the electronic structures of SiNWs are strongly orientation dependent.     

Zinc oxide nanostructures: epitaxially growing from hexagonal zinc nanostructures

The epitaxial growth of ZnO nanosheets and nanoneedles from a Zn/ZnO core/shell structure is verified by an experiment in which the ZnO nanoneedles and nanosheets are synthesized in air within an ultra-low temperature range from?250 to 400?°C by thermal oxidation of Zn films made up of hexagonal nanodiscs or nanoprisms. The hexagonal Zn structures are oxidized to form a Zn/ZnO core/shell structure with an epitaxial relationship; ZnO nanoneedles and nanosheets are found to grow epitaxially from the ZnO shell, along sixfold symmetric [Formula: see text] directions, showing the same lattice orientation as the Zn core. The stability difference among different facets of hexagonal Zn crystal structures plays a key role in the formation of ZnO nanosheets, nanoneedles and the Zn/ZnO core/shell structure, as well as ZnO hollow structures. A vapor-solid mechanism is suggested to explain the epitaxial growth process of the ZnO products. Photoluminescence properties of the ZnO nanostructures are also explored.     

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW. Low-temperature (4?K) time-resolved PL measurements show a decay time of [Formula: see text]?ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than that of the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas ([Formula: see text]?ns).