Optical evaluation on Nd3+-doped phosphate glasses for O-band amplification

We have fabricated and characterized optically Nd3+-doped phosphate [Li2O-CaO-BaO-Al2O3-La2O3-P2O5 (LCBALP)] glasses for drawing single-mode glass fiber. The 4F3/2→4I13/2 transition emission from the Nd3+ is at the 1.327?μm wavelength with a full width at half-maximum of 43?nm, and the spontaneous transition probability and quantum efficiency are calculated to be 1836?s-1 and 52%, respectively. The maximum stimulated emission cross sections for 4F3/2→4I11/2 and 4F3/2→4I13/2 transitions are derived to be 1.82×10(-20)?cm2 and 6.97×10(-21)?cm2, respectively, and the theoretical gain coefficient at the 1.327?μm wavelength is evaluated to be 0.182?dB/cm when the fractional factor of the excited neodymium ions equals 0.6, which indicates that Nd3+-doped LCBALP phosphate glasses are potential candidates in developing O-band optical fiber amplifiers.     

Modelling,design and optimization of compact taper and gratings for mode coupling to SOI waveguides at C-band

In this work, the design and optimization of compact taper is presented to enable coupling of infrared light in the C-band with the nano-photonic silicon-on-insulator (SOI) integrated optical waveguide. The proposed compact taper results in ～96% transmission efficiency for the taper length of ～5?µm and ～99.5% transmission efficiency for the taper length of 10?µm. The use of the proposed compact taper significantly reduces the foot print of optical coupler (grating and proposed compact taper) to (10?×?5)?µm² with ～96% transmittance and (10?×?10)?µm² with ～99.5% transmittance. The end-to-end coupling loss is less than 0.01?dB in the C-band. The compact taper along with grating presented in this work can be used as an efficient optical coupler for mode coupling from fibre to SOI single-mode optical waveguide in high density optical integrated circuits operating at 1550?nm.     

First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth

First-step nucleation growth has an important impact on the two-step growth of high-quality mid-infrared emissive InAs/InGaAs/InP quantum dots (QDs). It has been found that an optimized growth rate for first-step nucleation is critical for forming QDs with narrow size distribution, high dot density and high crystal quality. High growth temperature has an advantage in removing defects in the QDs formed, but the dot density will be reduced. Contrasting behavior in forming InAs QDs using metal-organic vapor phase epitaxy (MOVPE) by varying the input flux ratio of group-V versus group-III source (V/III ratio) in the first-step nucleation growth has been observed and investigated. High-density, 2.5 × 10(10)?cm(-2), InAs QDs emitting at>2.15?μm have been formed with narrow size distribution, ～1?nm standard deviation, by reducing the V/III ratio to zero in first-step nucleation growth.     

Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots

In this work, low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) experiments have been carried out to investigate the optical and electronic properties of InAs/GaAs quantum dots (QDs) subjected to room-temperature proton implantation at various doses (5 × 10(10)-10(14)?ions?cm(-2)) and subsequent thermal annealing. The energy shift of the main QD emission band is found to increase with increasing implantation dose. Our measurements show clear evidence of an inhomogeneous In/Ga intermixing at low proton implantation doses (≤5 × 10(11)?ions?cm(-2)), giving rise to the coexistence of intermixed and non-intermixed QDs. For higher implantation doses, a decrease of both the PL linewidth and the intersublevel spacing energy have been found to occur, suggesting that the dot-size, dot-composition and dot-strain distributions evolve towards more uniform ones.     

High characteristic temperature 1.5 µm wavelength laser diode via Sb-based quantum dots in quantum wells

The advent of laser diodes in the 1.55?µm wavelength region is becoming a hot topic in the field of telecommunications. The growth of strain-engineered Sb-based multi-stacks quantum dots (QDs) on GaAs by molecular beam epitaxy (MBE) is advantageous to restrain its drawback of self-absorption and thus beneficial for preparing efficient laser diodes (LDs). Moreover, owing to a strong electronic coupling between the QDs layers and the quantum wells (QWs), strain-engineered QDs introducing antimony (Sb) with emission wavelength up to 1.5?µm were achieved at room temperature. The p-type doping can substantially increase the QD laser’s ground state gain at room temperature. Based on this simple process, high efficient LD was obtained. The LD was fabricated with a cavity length of 1000?μm and a stripe width of 100?μm. The output performance was achieved with threshold current densities of the device as low as 135?A/cm², and with high Characteristic Temperatures of 118?K or higher in the temperature range between 20°C and 80°C. The continuous wave operating up to 32?mW were achieved at room temperature (RT).     

The passive optical properties of a silicon nanoparticle-embedded benzocyclobutene polymer waveguide

The passive optical properties of a silicon nanoparticle-embedded benzocyclobutene (BCB) waveguide were investigated. The silicon nanoparticles, of a size varying from 6 to 25?nm, were prepared by vapor condensation. The transmission modes and losses were examined by the prism coupler and cut-back methods. A He-Ne laser beam with a wavelength of 6328?? was used to measure the effective index and thickness of the waveguide. Laser light could be efficiently coupled into the BCB waveguide when the embedded Si nanoparticles were smaller than 6?nm. The film thickness and effective index of the Si-embedded BCB waveguide were measured to be 1.825?μm and 1.565, respectively. The optical transmission losses of the pure BCB and Si-embedded ridge waveguides measured by the cut-back method were 0.85 and 1.63?dB?cm(-1), respectively. Although the optical loss was increased by the embedded Si, the disturbance of the output contour was quite small. This result demonstrates that the nanoparticle-embedded polymer waveguide may be used for optoelectronic integrated circuits.     

低损耗离子交换玻璃基光波导制备与分析

考虑到离子交换和离子扩散工艺的特殊要求, 设计并熔制了适合于离子交换工艺的硅酸盐玻璃材料SiO₂-B₂O₃-Al₂O₃-R’O-R₂O（R’=Ca, Mg; R=Na, K）. 采用Ag⁺/Na⁺熔盐离子交换和电场辅助离子扩散工艺在这种玻璃材料基片上获得了掩埋式条形光波导. 光学显微镜和电子探针分析表明高折射率的Ag⁺扩散区位于玻璃基片表面以下约10μm处, 形成光波导的芯部. 光波导芯部尺寸约为8μm×8μm, 与单模光纤芯径尺寸相当, 保证了较低的光纤耦合损耗. 对光波导的测量结果得出：在波长为1.5μm处条形光波导的传输损耗约为0.1dB/cm, 与单模光纤的耦合损耗约为0.2~0.3dB. 条形光波导的传输损耗与材料本身的损耗接近, 表现出掩埋式光波导的低损耗特征. 分析表明, 经过进一步优化, 这种光波导制备技术可用于低损耗光波导器件的制作.     

Design, fabrication, and characterization of Si-based ARROW photonic crystal bend waveguides and power splitters

Silicon-based (Si-based) photonic crystal waveguide based on antiresonant reflecting optical waveguide (ARROW PCW) structures consisting of 60° bends and Y-branch power splitters were designed and first efficiently fabricated and characterized. The ARROW structure has a relatively large core size suitable for efficient coupling with a single-mode fiber. Simple capsule-shaped topography defects at 60° photonic crystal (PC) bend corners and Y-branch PC power splitters were used for increasing the broadband light transmission. In the preliminary measurements, the propagation losses of the ARROW PC straight waveguides lower than 2 dB/mm with a long length of 1500?μm were achieved. The average bend loss of 60° PC bend waveguides was lower than 3 dB/bend. For the Y-branch PC power splitters, the average power imbalance was lower than 0.6?dB. The results show that our fabricated Si-based ARROW PCWs with 60° bends and Y-branch structures can provide good light transmission and power-splitting ability.     

Tailoring of morphology and emission wavelength of AlGaInAs quantum dots

We present a study of the growth, morphology and optical properties of Al(x)Ga(1-x-y)In(y)As quantum dots (QDs) for a wide range of Al and In concentrations (0≤x≤0.34 and 0.43≤y≤0.60). Short emission wavelengths between 660 and 940?nm and QD surface densities up to 1.1 × 10(11)?cm(-2) have been achieved. Our results show that by varying both the Al concentration and the In concentration an independent adjustment of strain and QD band gap is possible. This additional degree of freedom can be employed for tailoring AlGaInAs QDs with the desired emission wavelength, surface density and average size. AlGaInAs QDs thus offer new possibilities for future QD device design.     

玻璃基掩埋式光波导堆栈的制作与表征

在硅酸盐光学玻璃基片上制作了光波导堆栈, 这种光波导堆栈通过Ag⁺/Na⁺熔盐离子交换和电场辅助离子扩散技术顺次制作了两层掩埋式光波导. 对光波导堆栈的横截面显微结构进行了观察, 并对堆栈中两层波导的损耗特性进行了测试. 所获得的光波导堆栈中的上、下两层波导芯部分别位于玻璃表面以下14和35 μm处; 上层光波导芯部尺寸约为12 μm×7 μm; 下层光波导芯部尺寸约为9 μm×8 μm. 通光测试显示两层波导在1.55 μm工作波长下均为单模光波导, 且两者之间没有相互耦合. 损耗测试分析结果显示: 堆栈中两层光波导的传输损耗均约为0.12 dB/cm,与单模光纤之间的耦合损耗分别为0.78和0.73 dB. 分析表明, 这种光波导堆栈在玻璃基集成光芯片的高密度集成方面具有很好的应用前景.     

Composite material made of plasmonic nanoshells with quantum dot cores: loss-compensation and ε-near-zero physical properties

A theoretical investigation of loss-compensation capabilities in composite materials made of plasmonic nanoshells is carried out by considering quantum dots (QDs) as the nanoshells' cores. The QD and metal permittivities are modeled according to published experimental data. We determine the modes with real or complex wavenumber able to propagate in a 3D periodic lattice of nanoshells. Mode analysis is also used to assess that only one propagating mode is dominant in the composite material whose optical properties can hence be described via homogenization theory. Therefore, the material effective permittivity is found by comparing different techniques: (i)?the mentioned mode analysis, (ii)?Maxwell Garnett mixing rule and (iii)?the Nicolson-Ross-Weir method based on transmission and reflection when considering a metamaterial of finite thickness. The three methods are in excellent agreement, because the nanoshells considered in this paper are very subwavelength, thus justifying the parameter homogenization. We show that QDs are able to provide loss-compensated ε-near-zero metamaterials and also loss-compensated metamaterials with large negative values of permittivity. Besides compensating for losses, the strong gain via QD can provide optical amplification with particular choices of the nanoshell and lattice dimensions.     

Dispersion engineering of a silicon-nanocrystal-based slot waveguide for broadband wavelength conversion

A proposal for broadband wavelength conversion using four-wave mixing is presented based on a slot waveguide with silicon nanocrystals (Si-nc's) as the optical nonlinear material. The dispersion of the waveguide is engineered to realize a flat dispersion as well as a small effective mode area for better nonlinear interaction by optimizing the waveguide dimensions. The conversion performance is synthetically analyzed and numerical results show that a bandwidth of over 400?nm and an efficiency of -2.38?dB can be achieved using a pump power of 150?mW in a 4?mm long Si-nc slot waveguide with slot width of 50?nm, slab width of 310?nm, and height of 305?nm.     

Site-controlled growth of InP/GaInP quantum dots on GaAs substrates

A technology platform for the epitaxial growth of site-controlled InP quantum dots (QDs) on GaAs substrates is presented. Nanoholes are patterned in a GaInP layer on a GaAs substrate by electron beam lithography and dry chemical etching, serving as QD nucleation centers. The effects of a thermal treatment on the structured surfaces for deoxidation are investigated in detail. By regrowth on these surfaces, accurate QD positioning is obtained for square array arrangements with lattice periods of 1.25?μm along with a high suppression of interstitial island formation. The optical properties of these red-emitting QDs (λ?～?670?nm) are investigated by means of ensemble- and micro-photoluminescence spectroscopy at cryogenic temperatures.     

Focused ion beam fabrication of novel core-shell nanowire structures

A novel method of indirect deposition by means of a focused ion beam (FIB) is utilized to develop metal/insulator/semiconductor nanowire core-shell structures. This method is based upon depositing an annular pattern centered on a nanowire, with secondary deposition then coating the wire. Typical cross-sectional deposition area increments as a function of ion doses are 1.3 × 10(-2)?μm(2)?nC(-1) for Pt and 3.5 × 10(-2)?μm(2)?nC(-1) for SiO(2). The structures are examined with a transmission electron microscope (TEM) using a new nanowire TEM sample preparation method that allows direct examinations of individually selected core-shell nanowires fabricated under different indirect FIB deposition conditions. Elemental analyses by means of energy dispersive x-ray spectroscopy and electron energy filtered TEM imaging verify the deposition of SiO(2) and Pt layers. Relatively uniform Pt and SiO(2) coatings on individual GaP nanowires can be achieved with overall thickness deviation of about 10% for deposition up to 25-30?nm thick Pt or SiO(2) shells. It should be possible to extend this approach to any nanowire/nanotube system, and to a wide range of coatings in any desired layer sequences.     

A one-pot aqueous synthesis of high-luminescent thiol-capped CdTe and its bioapplication

Our study described a synthesis of thiol-capped high-luminescent (quantum yield as high as 80%) CdTe quantum dots (QDs) with a facile method in aqueous phase. The fluorescence of the as-prepared CdTe QDs could be tuned from 500 nm to 650 nm. More importantly, after beta-actin conjugation, the CdTe QDs were successfully conjugated with live cells to observe their configurations, demonstrating their potentially broad application as biolabels. The crystal structure, morphology and optical property of the products were investigated by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and fluorescence spectrophotometer.     

Single-nanowire surface plasmon gratings

We demonstrate single-nanowire plasmonic gratings made by focused-ion-beam milling of single Au nanowires. At the optical communication band, a 290?nm diameter Au nanowire with grating length of 15.6?μm offers evident grating features with a transmission dip up to ～3.3?dB. The grating effects in typical Au nanowires with different grating parameters (e.g.?grating depth, width and length) are also investigated. Our results suggest a novel approach to one-dimensional plasmonic gratings with high compactness and flexibility, which may find applications in low-dimensional wavelength-selective plasmonic circuits and devices.     

Single-mode GaAs/AIGaAs W waveguides with a low propagation loss

We have designed a low-loss single-mode GaAs/AIGaAs optical waveguide with a symmetric five-layer heterostructure at the 1.31-μm wavelength by use of an effective-index method. Waveguides with a W-shaped refractive-index profile have been grown by use of a metallo-organic chemical vapor deposition technique and fabricated with a chemical wet-etching method. Propagation loss has been measured by use of the Fabry-Perot resonance method and a sequential-cleaving experiment. The measured loss is as low as 0.19 dB/cm for waveguides with 2.3-μm thickness and 4.3-μm width, which is comparable to the lowest-loss semiconductor waveguides yet reported. These waveguides could be used to make low-loss modulators for guided-wave devices.     

Fabrication of Yb3+/Er3+ codoped Bi2O3–WO3–TeO2 pedestal type waveguide for optical amplifiers

We report, for the first time to our knowledge, experimental results on pedestal waveguides produced with Yb³⁺/Er³⁺ codoped Bi₂O₃–WO₃–TeO₂ thin films deposited by RF Sputtering for photonic applications. Thin films were deposited using Ar/O₂ plasma at 5 mTorr pressure and RF power of 40 W on substrates of silicon wafers. The definition of the pedestal waveguide structure was made using conventional optical lithography followed by plasma etching. Propagation losses around 2.0 dB/cm and 2.5 dB/cm were obtained at 633 and 1050 nm, respectively, for waveguides in the 20–100 μm width range. Single-mode propagation was measured for waveguides width up to 10 μm and 12 μm, at 633 nm and 1050 nm, respectively; for larger waveguides widths multi-mode propagation was obtained. Internal gain of 5.6 dB at 1530 nm, under 980 nm excitation, was measured for 1.5 cm waveguide length (∼3.7 dB/cm). The present results show the possibility of using Yb³⁺/Er³⁺ codoped Bi₂O₃–WO₃–TeO₂ pedestal waveguide for optical amplifiers.     

Energy transportation in a subwavelength waveguide composed of a pair of comb-shape nanorod chains

A subwavelength plasmonic waveguide composed of a pair of comb-shape nanorod chains is proposed. The electromagnetic energy can be transported in the waveguide via the interaction strength of magnetoinductive coupling as well as conduction current exchange. Finite Element Method simulation results reveal that for such a waveguide composed of 50 pairs of 400?nm-long-nanorods, a passband ranging from zero to cutoff frequency 156.2?THz, and an effective propagation length of 20.87?μm can be achieved simultaneously. The proposed mechanism of energy transport in the nanoscale has potential applications in subwavelength transmission lines for a wide range of integrated optical devices.     

Fabrication of ridge waveguide on the ion-implanted TGG crystal by femtosecond laser ablation

The ridge waveguide on the TGG crystal has been fabricated through the combination of the ion implantation and the femtosecond laser ablation. Firstly, optical planar waveguide was formed on the top surface of TGG crystal by ion implantation. To investigate the damage induced by the 6.0?MeV Si ion implantation at a dose of 2.0 × 10¹⁵ ions/cm², the vacancy distribution was obtained by the SRIM simulation programme. Subsequently, the ridge waveguide with a width of 20?µm was produced by femtosecond laser ablation. The optical guiding properties of the ridge TGG waveguide were measured at the near-infrared wavelength (976?nm) by the end-face coupling technique. The work demonstrated that the manufactured waveguide structure possesses the ability to confine the light into guided mode, making it potentially valuable in integrated devices.