S波段GaAs单片可变增益放大器

用分析方法获取具有4个端口的双栅FET适用S参数进行设计,用微波单片集成电路技术制成增益30dB,可控增益大于65dB,二栅开关时间小于5ns的S波段单片可变增益放大器,封装后的尺寸为17.5mm×20mm×5mm。     

高增益自偏S波段MMIC低噪声放大器

报道了具有高增益自偏结构的低噪声S波段MMIC宽带低噪声高增益放大器.该放大器是采用国际先进的0.25μm PHEMT工艺技术加工而成.电路设计采用了两级级联负反馈结构,并采用电阻自偏压技术,单电源供电,使用方便,可靠性高,一致性好.MMIC芯片测试指标如下:在1.9～4.2GHz频率范围内,输入输出驻波小于2.0,线性功率增益达30dB,带内增益平坦度为±0.7dB,噪声系数小于2.7dB.芯片尺寸:1mm×2mm×0.1mm.这是国内报道的增益最高,芯片面积最小的S波段放大器.     

毫米波单片平衡放大器

研制了一款毫米波(26～40 GHz)平衡式单片放大器芯片。放大器基于0. 15μm GaAs pHEMT工艺,实现了毫米波全频段(26～40 GHz)增益放大。采用Lange桥平衡结构,使放大器较于单边放大器有更好的输入输出驻波比,更大的1 dB增益压缩输出功率。设计时结合pHEM T晶体管小信号和大信号模型,采用自偏和RLC并联负反馈结构,在减小芯片面积的同时提高了电路的稳定性。放大器芯片尺寸仅1. 6 mm×1. 6 mm,在工作频率26～40 GHz内,测试结果表明:输入、输出驻波比小于1. 5,增益在11 dB附近,平坦度在±0. 5 dB,1 dB增益压缩输出功率大于11 dBm。测试结果验证了设计的正确性。     

一种噪声系数为1.4 dB的S波段MMIC低噪声放大器

报道了一种可直接应用于无线接收系统前端的具有较低噪声系数和较高相关增益的MMIC低噪声放大器,该低噪声放大器采用0.50 μm GaAs PHEMT工艺技术制作.电路设计采用两级级联结构,为减小电路面积采用集总参数元件匹配电路,并用ADS软件仿真无源元件寄生效应.电路测试结果表明:在2.8～3.5 GHz 频段内噪声系数低于1.4 dB,同时相关增益大于25 dB,增益平坦度小于0.5 dB,输入输出反射损耗小于-10 dB.     

X波段功率单片放大器的研制

介绍了X波段功率单片放大器的设计、制造、测试等技术,以及器件的大信号模型的建立.X波段功率单片放大器采用两级放大,经过功率分配和功率合成,输入输出匹配为50 Ω,单片性能达到输出功率≥5W,附加效率≥33%,功率增益≥13.5dB,增益波动≤0.3dB,输入驻波比≤2?1.     

高增益自偏S波段MMIC低噪声放大器

报道了具有高增益自偏结构的低噪声S波段MMIC宽带低噪声高增益放大器．该放大器是采用国际先进的0.25μm PHEMT工艺技术加工而成．电路设计采用了两级级联负反馈结构,并采用电阻自偏压技术,单电源供电,使用方便,可靠性高,一致性好．MMIC芯片测试指标如下：在1.9～4.2GHz频率范围内,输入输出驻波小于2.0,线性功率增益达30dB,带内增益平坦度为±0.7dB,噪声系数小于2.7dB．芯片尺寸：1mm×2mm×0.1mm．这是国内报道的增益最高,芯片面积最小的S波段放大器．     

毫米波高性能收发多功能芯片

利用0.15μm GaAs PHEMT工艺,研制了一款集成功率放大器和低噪声放大器的毫米波多功能单片。发射支路功率放大器采用三级放大拓扑结构,在32~36GHz内,在6V工作电压下,线性增益23dB,增益平坦度优于±0.75dB,输入/输出驻波小于1.3,饱和输出功率30dBm,功率附加效率约30%。接收支路低噪声放大器采用三级放大拓扑结构,在5V、30mA工作电压下,在32~37GHz内,线性增益23.5dB,增益平坦度优于±1dB,噪声系数小于2.5dB,1dB压缩输出功率大于6dBm。该芯片面积为3.67mm×3.13mm。     

0.8～8.5 GHz宽带单片低噪声放大器

利用负反馈放大器设计原理,采用GaAs PHEMT工艺技术,设计制作了一种微波宽带GaAs PHEMT低噪声放大器芯片,并给出了详细测试曲线.该放大器由两级组成,采用负反馈结构,工作频率0.8～8.5 GHz,整个带内功率增益19 dB,噪声系数1.55 dB,增益平坦度小于±0.7 dB,输入驻波比1.6,输出驻波比1.8,1 dB压缩点输出功率大于10 dBm,芯片内部集成偏置电路,单电源 5 V供电,芯片具有良好的温度特性.该芯片面积为2.5 mm × 1.2 mm.     

微波毫米波宽带单片低噪声放大器

推导了反馈电路理论,利用0.25μmGaAs PHEMT工艺,研制了两种并联反馈单片低噪声放大器。第一种放大器的工作频带为6～18GHz,测得增益G≥21dB,带内增益波动ΔG≤±1.0dB,噪声系数NF典型值为2.0dB,输入驻波VSWRin≤1.5,输出驻波VSWRout≤2.0,1分贝压缩点输出功率P1dB≥11dBm。第二种放大器的工作频带为26～40GHz,测得增益G≥17dB,噪声系数NF约为2.0dB,输入、输出驻波VSWR≤2.5,1分贝压缩点输出功率P1dB≥10dBm。两种电路的测试结果验证了设计的正确性。     

24～38GHz GaAs单片低噪声放大器的研制

介绍了24～38 GHz低噪声放大器MMIC的研制.分析了微波晶体管放大器的噪声特性,针对噪声系数和增益,利用软件进行电路仿真优化和电磁场分析,设计制作电路版图,在标准3 inGaAs工艺线进行工艺制作.采用电子束制作0.20 μm"T"形栅,利用选择腐蚀的方法准确控制有源器件的,I<,dss>和V<,p>,微波测试结果为在频带内的噪声系数小于3.8 dB,小信号增益大于13 dB,增益平坦度小于±0.6 dB,输入和输出驻波比小于2:1,微波性能与NORTHROP GRUMMAN公司的同类产品ALH140C的水平相当.     

A 30-GHz monolithic receiver

Several monolithic integrated circuits have been developed to make a 30-GHz receiver. The receiver components include a low-noise amplifier, an IF amplifier, a mixer, and a phase shifter. The LNA has a 7-dB noise figure with over 17 dB of associated gain. The IF amplifier has a 13-dB gain with a 30-dB control range. The mixer has a conversion loss of 10.5 dB. The phase shifter has a 180° phase shift control and a minimum insertion loss of 1.6 dB.     

Ku波段GaAs单片接收机

报道了工作频率分别为10.7-11．6GHz和11．7－12．2GHzGaAs单片接收机的研制结果。接收机并包括四种电路，即低噪声效大器、介质稳频振荡器、混频器和中频放大器。电路均采用GaAs全离子注入平面工艺创作，并封装在金属管壳内测试．10．7－11．6GHz接收机的噪声系数达到3．5dB，增益大于35dB；11．7－12.2GHz接收机的噪声系数可达到4dB，增益大于31dB。     

L波段砷化镓单片低噪声放大器

设计、研制了一种工作在Ｌ波段的ＧａＡｓ单片低噪声放大器。该放大器在ＨＰ－８５１０Ｂ网络分析仪和ＨＰ－８９７０Ｂ自动噪声仪上的测试结果为：１．１～１．５ＧＨＺ频段，ＮＦ≤２．０ｄＢ，Ｇ≥１８ｄＢ，ＶＳＷＲ（ｉｎ，ｏｕｔ）≤２：１，增益起伏≤０．５ｄＢ；在１．５～２．０ＧＨＺ频段ＮＦ≤２．５ｄＢ，Ｇ≥１８ｄＢ，ＶＳＷＲ（ｉｎ，ｏｕｔ）≤２：１，增益起伏≤±０．５ｄＢ。     

A Ka-band Four-stage Self-biased Monolithic Low Noise Amplifier

A Ka-band four-stage self-biased monolithic low noise amplifier has been developed using a commercial 0.18-μm pseudomorphic high electron-mobility transistor (pHEMT) process. For the application of self-bias technique, the low noise amplifier (LNA) is biased from a single power supply rail. The LNA has achieved a broadband performance with a gain of more than 18 dB, a noise figure of less than 3.8 dB in the RF frequency of 26 to 40 GHz. The chip size is 3 × 1 mm².     

A W-band image-rejection downconverter

The design, fabrication, and evaluation of a W-band image-rejection downconverter based on pseudomorphic InGaAs-GaAs HEMT technology are presented. The image-rejection downconverter consists of a monolithic three-stage low-noise amplifier, a monolithic image-rejection mixer, and a hybrid IF 90° coupler with an IF amplifier. The three-stage amplifier has a measured noise figure of 3.5 dB, with an associated small signal gain of 21 dB at 94 GHz while the image-rejection mixer has a measured conversion loss of 11 dB with +10 dBm LO drive at 94.15 GHz. Measured results of the complete image-rejection downconverter including the hybrid IF 90° coupler and a 10 dB gain amplifier show a conversion gain of more than 18 dB and a noise figure of 4.6 dB at 94.45 GHz     

A Low-Noise and Wide-Band Esaki Diode Amplifier with a Comparatively High Negative Conductance Diode at 1.3 Gc/s

This paper discusses the stability problem, output power, saturation level, and noise figure of Esaki diode amplifiers, and describes design considerations of the broadband circulator type amplifier with a large negative conductance diode. An experimental amplifier with a diode which has a negative resistance of -25 ohms is also described. The amplifier has a 3 dB bandwidth of 20 per cent, 18 dB gain, and a 3.6 dB noise figure including 0.3 dB insertion loss of the circulator. The output level for which the gain is 1 dB lower than the small signal gain is -17 dBm. These experimental results are in fair agreement with those estimated theoreticaly.     

S-band single-stage EDFA with 25-dB gain using distributed ASE suppression

We propose a novel compact design for a single-stage S-band erbium-doped fiber amplifier, wherein distributed suppression of C-band amplified spontaneous emission is provided by optimized bend loss in a coaxial core fiber. Simulations show that /spl sim/25-dB unsaturated gain over 30-nm bandwidth (1495-1525) nm is achievable with the designed module, using a nominal pump power of 500 mW. The noise figure of the amplifier varies between 4.5 and 8 dB from 1495 to 1525 nm. By proper designing, we have also ensured that the gain ripple over the entire 30-nm bandwidth is 相似文献   

High-gain 1310-nm reflective semiconductor optical amplifiers with low-gain uncertainty

A 1310-nm reflective semiconductor optical amplifier with a gain uncertainty of only 0.8 dB at an average gain level of over 30 dB has been demonstrated using a microoptic polarization reversing retroreflector. For this amplifier 3-dB saturation output powers of up to 10 dBm and a noise figure of 7.5 dB have been obtained. A low gain uncertainty for undefined input signal polarization states and input signal wavelengths (which may vary over several nanometers) is of primary importance in switching applications.     

110-120-GHz monolithic low-noise amplifiers

The authors discuss the development of 110-120-GHz monolithic low-noise amplifiers (LNAs) using 0.1-mm pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNAs have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The authors state that the small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band