An investigation into the enhanced permittivity properties of Zr co-doped (Ga0.5Nb0.5)0.03Ti0.97O2 ceramics

Dielectric materials with high permittivity and low dielectric loss have a range of promising applications within electronic devices. Here, we report on Zr co-doped (Ga_0.5Nb_0.5)_0.03Ti_0.97O₂ ceramics, fabricated using a solid-state reaction. The colossal permittivity (CP) of (Ga_0.5Nb_0.5)_0.03-(Zr_xTi_1-x)_0.97O₂ ceramics was investigated (x = 0%, 1%, 4%, 6%, 10%, 20%). When the doping value of Zr was 4%, the dielectric loss was reduced to 0.098 and, at room temperature and at a frequency of 1000 Hz, the dielectric permittivity was recorded as 2420. In addition, the material's dielectric permittivity exhibited good stability at temperatures ranging from −50 °C to 200 °C. Using X-ray photoelectron spectroscopy (XPS) and Scanning electron microscopy (SEM), we have observed that Zr doping reduces grain size and increases grain boundary regions. According to our XPS and impedance analysis, Zr doping also reduces the concentration of oxygen vacancies, which are considered to be the main cause of dielectric loss. We believe that the Zr doping is an effective method for reducing the dielectric loss of CP materials.     

Triple-doping of (Ga1/2Nb1/2)xTi1-xO2 ceramics with Al3+ for enhanced giant dielectric response with simultaneous decrease in dielectric loss

An acceptor-donor co-doped (Ga_1/2Nb_1/2)_0.1Ti_0.9O₂ ceramic is triple-doped with Al³⁺, followed by sintering at 1450 °C for 5 h to obtain (Al_xGa_1/2-xNb_1/2)_0.1Ti_0.9O₂ ceramics with improved giant dielectric properties. Homogeneous dispersion of all dopants inside the grains, along with the partially segregated dispersion of the Ga³⁺ dopant along the grain boundaries, is observed. The (Al_xGa_1/2-xNb_1/2)_0.1Ti_0.9O₂ ceramics exhibit high dielectric permittivities (ε′～4.2–5.1 × 10⁴) and low loss tangents (tanδ～0.007–0.010), as well as a low-temperature coefficients (<±15%) between ? 60 and 200 °C. At 1 kHz, tanδ is significantly reduced by ～4.4 times, while ε′ is increased by ～3.5 times, which is attributed to the higher Al³⁺/Ga³⁺ ratio. The value of tanδ at 200 °C is as low as 0.04. The significantly improved dielectric properties are explained based on internal and surface barrier-layer capacitor effects, which are primarily produced by the Ga³⁺ and Al³⁺ dopants, respectively, whereas the semiconducting grains are attributed to Nb⁵⁺ doping ions.     

Magnetic and electrical properties of single-phase multiferroic (1-x)Pb(Zr0.52Ti0.48)O3–xPb(Fe0.5Nb0.5)O3 thin films prepared by sol-gel route

Single-phase multiferroic (1-x)Pb(Zr_0.52Ti_0.48)O₃-xPb(Fe_0.5Nb_0.5)O₃ (0≤x≤0.5) thin films were synthesized by sol-gel route and characterized to understand their structural, electrical, and magnetic properties. The films were thermally treated by conventional furnace (CFA) and rapid thermal annealing (RTA). A pyrochlore-free perovskite phase is stabilized only by RTA in samples with high Fe³⁺/Nb⁵⁺ content. The films displayed excellent dielectric and ferroelectric properties in the whole concentration range, with saturated hysteresis loops and remanent polarization values of ～15μC/cm². Films with x>0.3 showed ferromagnetic behavior at room temperature. Consequently, the multiferroic behavior in the films occurs in a different concentration range than that observed in bulk ceramics. The origin of the weak ferromagnetism is discussed.     

Giant permittivity in (Nb0.5La0.5)xTi1-xO2 ceramics prepared by slip casting in a strong magnetic field

A series of textured (Nb_0.5La_0.5)_xTi_1-xO₂ (x = 0, 0.0025, 0.005, 0.01) ceramics were sintered in a nitrogen environment after magnetic slip casting (12 T). Component x ranges from 0.0025 to 0.01 while the degree of orientation increases from 0.49 to 0.88. (Nb_0.5La_0.5)_0.01Ti_0.99O₂ ceramics in the parallel magnetic field's plane have a high permittivity ɛ_r ≈ 1.6 × 10⁴ and the ultralow dielectric loss tanδ ≈ 0.0038 at 10⁴ Hz. The temperature coefficient value of η ≤ ± 7.1% between 218–473 K, fulfilling the X9R requirements. The giant permittivity properties of textured ceramics are mainly derived from internal barrier layer capacitor impacts, electron hopping, and electron-pinned defect-dipoles polarization. The microstructure evolution of sintered ceramics was modified by texturing in a magnetic field, leading to higher activation energies of dielectric relaxations and resistance of grain boundaries and grains. This excellent performance is expected to show great potential in electronic devices' miniaturization and high-density energy storage.     

Enhanced photodielectric effect in (0.88–x)Bi0.5Na0.5TiO3–0.12BaTiO3 –xBa(Ti0.5Ni0.5)O3–δ (BNBTNO) ceramics

In this work, solid solutions of (0.88–x)Bi_0.5Na_0.5TiO₃–0.12BaTiO₃– xBa(Ti_0.5Ni_0.5)O_3–δ were designed and prepared. These compositions exhibit ferroelectricity at room temperature, with the tetragonal symmetry. The c/a values are varied from ～1.0067 (x?=?0.1) to ～1.0208 (x?=?0.04). A transition from the high–temperature relaxor state to the low–temperature ferroelectric state is demonstrated by the temperature dependence of dielectric data and Raman spectrum. The direct bandgap decreases from 3.40?eV for x?=?0 to 3.16?eV for x?=?0.1. The Ba(Ti_0.5Ni_0.5)O_3–δ addition leads an additional optical absorption peak in the visible range. The obvious photodielectric effect was discovered. In particular, the relative permittivity of the x?=?0.1 composition rises from ～756 to ～807 under light illumination.     

Dielectric temperature stability of Nb-modified Bi0.5(Na0.78K0.22)0.5TiO3 lead-free ceramics

In this study, the phase structure, microstructure and dielectric properties of Bi_0.5(Na_0.78K_0.22)_0.5(Ti_1-xNb_x)O₃ lead-free ceramics prepared by traditional solid phase sintering method were studied. The second phase pyrochlore bismuth titanate (Bi₂Ti₂O₇) was produced in the system after introduction of Nb⁵⁺. The dielectric constant of the sample (x = 0.03) sintered at 1130 °C at room temperature reached a maximum of 1841, and the dielectric loss was 0.045 minimum. It had been found that the K⁺ and Nb⁵⁺ co-doped Bi_0.5Na_0.5TiO₃ (BNT) lead-free ceramics exhibited outstanding dielectric-temperature stability within 100–400 °C with T_cc ≤±15%. Result of this research provides a valuable reference for application of BNT based capacitors in high temperature field.     

High permittivitty (La0.5Sr0.5)CoO3-δ-La(Co0.5Ti0.5)O3-δ ceramic composites for next generation MIM capacitors

Dielectrics with low capacitance loss and high relative permittivity are of high demand in metal-insulator-metal (MIM) capacitor that offers higher level of miniaturization, flexibility and performance. In order to achieve high relative permittivity, developing ceramics with metallic inclusions, has been suggested as a working strategy. But such materials may have high leakage currents and often lack thermal stability. With the objective for MIM applications, a series of (1-x)La(Co_0.5Ti_0.5)O_3-δ-x(La_0.5Sr_0.5)CoO_3-δ ceramics [x?=?0.0, 0.02, 0.04, 0.06, 0.08, 0.1, 0.2, 0.3, 0.4, 0.5, 1] were developed. The crystal structure analysis was performed for La(Co_0.5Ti_0.5)O_3-δ, (La_0.5Sr_0.5)CoO_3-δ and 0.5La(Co_0.5Ti_0.5)O_3-δ-0.5(La_0.5Sr_0.5)CoO_3-δ using X-pert High Score Plus. The composite with x?=?0.5 in (1-x)La(Co_0.5Ti_0.5)O_3-δ-x(La_0.5Sr_0.5)CoO₃-_δ showed a maximum relative permittivity of 4920 with promising ac electrical resistivity (～202?Ω-cm). The thermal, electrical and dielectric properties together suggest that the composition 0.5La(Co_0.5Ti_0.5)O_3-δ-0.5(La_0.5Sr_0.5)CoO₃-_δ is suitable for MIM capacitors in DRAM and RF devices.     

Colossal permittivity and ultralow dielectric loss in (Nd0.5Ta0.5)xTi1-xO2 ceramics

Giant permittivity ceramic is one of the most significant classes of material to realize the miniaturization and integration of a high-performance capacitor. In this paper, to realize good giant dielectric properties, the (Nd_0.5Ta_0.5)_xTi_1-xO₂ ceramics (NTTO x = 0.005, 0.01, 0.03, 0.05) were synthesized by a standard conventional solid-state reaction. Comparing with the previous co-doped TiO₂ ceramics giant permittivity material system, NTTO ceramics perform extremely colossal permittivity and ultralow dielectric loss (1%NTTO: ε = 82052, tanδ = 0.008 at 1 kHz; 5%NTTO: ε = 170131, tanδ = 0.090 at 1 kHz). The broad distinction of the dielectric behavior between the (Nd_0.5Ta_0.5)_xTi_1-xO₂ ceramics can be explained by the impedance analysis and the calculated polarization activation energies. The main electron-pinned defect-dipole (denoted as EPDD) polarization corresponds to the ultralow loss, embodying in the maximum value of E_gb (the activation energy of the grain boundary), E_a2 (the EPDD polarization activation energies) and the minimum value of E_a1 (the total polarization activation energies). Though the interfacial polarization can cause the permittivity increase, it can also give rise to poor frequency stability and higher loss.     

Phase formation and dielectric properties of Ln2(Ln′0.5Nb0.5)2O7 (Ln = rare earth element)

Weberites and pyrochlores (A₂B₂O₇), both fluorite-related superstructures, are attractive dielectric ceramics due to their ability to accommodate diverse cations, thus allowing their properties to be tailored. This study focuses on the fundamental understanding of the structure–dielectric property relationships in fluorite-related oxides. Specifically, Ln₃NbO₇ and Ln₂(Ln′_0.5Nb_0.5)₂O₇ (where the ionic radius of Ln′ is smaller than that of Ln) compounds are investigated. It has been previously shown that weberite-type Ln₃NbO₇ exhibits a composition dependent dielectric relaxation above room temperature. It is here shown that a dielectric relaxation also occurs in La₂(Ln′_0.5Nb_0.5)₂O₇ (Ln′ = Yb³⁺, Er³⁺, and Dy³⁺) compounds near or below ?158 °C. The temperature, at which the maximum permittivity occurs, is different for different compositions (?132 °C for La₂(Yb_0.5Nb_0.5)₂O₇, ?197 °C for La₂(Er_0.5Nb_0.5)₂O₇, and ?187 °C for La₂(Dy_0.5Nb_0.5)₂O₇ at 1 MHz) and is correlated with the distortion of the NbO₆ octahedra. The room temperature dielectric permittivity of all three compounds was measured to be between 40 and 50 at 1 MHz.     

Origin of low dielectric loss and giant dielectric response in (Nb+Al) co‐doped strontium titanate

(Nb+Al) co‐doped SrTiO₃ ceramics with a nominal composition of Sr(Nb_0.5Al_0.5)_xTi_1‐xO₃ (x = 0, 0.02, 0.04, and 0.06) were fabricated using the conventional solid‐state reaction method; giant permittivity (10500) and low dielectric loss (0.03) were obtained at x = 0.06. Dielectric and impedance spectroscopy, X‐ray photoelectron spectroscopy, and Raman spectroscopy, were employed to study why the dielectric property improved. The results indicate that the giant dielectric response occurs because of the combined effects of the off‐center Ti³⁺ reorientation and conduction of electrons with the polar ordering structure Ti³⁺/Ti⁴⁺. In contrast, the low dielectric loss can be attributed to electron localization that occurs because of the defect dipole . These fundamental understandings will benefit the design of doped SrTiO₃ ceramics with desired performance.     

Effects of Li doping on dielectric properties of Ag(Ta0.5Nb0.5)O3 thick films

Low loss ferroelectric materials have been extensively investigated for the high frequency device applications. Especially, weak frequency dispersion materials with high dielectric permittivity and low loss tangent have enormous potential for electronic components including filters, and embedded capacitors. Ag(Ta_0.5Nb_0.5)O₃ thick films have been prepared by low temperature sintering aid Li₂CO₃ (0, 1, 3 and 5 wt%). Ag(Ta_0.5Nb_0.5)O₃ thick films were characterized by X-ray diffraction analysis and scanning electron microscopy. The dielectric and ferroelectric properties were also investigated. We observed very weak frequency dispersion of dielectric permittivity at the microwave frequency range.     

Preparation,characterization, and giant dielectric permittivity of (Y3+ and Nb5+) co–doped TiO2 ceramics

The microstructure and giant dielectric properties of Y³⁺ and Nb⁵⁺ co–doped TiO₂ ceramics prepared via a chemical combustion method are investigated. A main rutile–TiO₂ phase and dense ceramic microstructure are obtained in (Y_0.5Nb_0.5)_xTi_1-xO₂ (x = 0.025 and 0.05) ceramics. Nb dopant ions are homogeneously dispersed in the microstructure, while a second phase of Y₂O₃ particles is detected. The existence of Y³⁺, Nb⁵⁺, Ti⁴⁺ and Ti³⁺ as well as oxygen vacancies is confirmed by X–ray photoelectron spectroscopy and X–ray absorption near edge structure analysis. The sintered ceramics exhibit very high dielectric permittivity values of 10⁴–10⁵ in the frequency range of 40–10⁶ Hz. A low loss tangent value of ≈0.08 is obtained at 40 Hz. (Y_0.5Nb_0.5)_xTi_1-xO₂ ceramics can exhibit non–Ohmic behavior. Using impedance spectroscopy analysis, the giant dielectric properties of (Y_0.5Nb_0.5)_xTi_1-xO₂ ceramics are confirmed to be primarily caused by interfacial polarization.     

Impedance spectroscopy,B-site cation ordering and structure–property relations of (1 − x) La[Al0.9(Mg0.5Ti0.5)0.1]O3–x CaTiO3 ceramics for 5G dielectric waveguide filters

Dense (1 ? x) La[Al_0.9(Mg_0.5Ti_0.5)_0.1]O₃–x CaTiO₃ ceramics were synthesized via solid-state reaction. The crystal structure and microwave dielectric properties of the ceramics were systematically investigated. Rietveld refinement revealed that when x ≤ 0.2, the ceramics had a rhombohedral structure with an R-3c space group. When x ≥ 0.5, the ceramics had an orthorhombic structure with a Pbnm space group. Selected area electron diffraction and Raman spectroscopy analyses proved that the microwave dielectric ceramics had a B-site order, which accounted for the great improvement in microwave dielectric properties. The content of oxygen vacancies was identified through X-ray photoelectron spectroscopy, and the change rule of Q × f was closely related to oxygen vacancy content. The perturbation of A-site cations had an important influence on dielectric constant. Specifically, with the increase in Ti⁴⁺ content, the perturbation effect of the A-site cations was enhanced and dielectric constant increased. When x = 0.65, the temperature coefficient of resonant frequency of the (1 ? x) La[Al_0.9(Mg_0.5Ti_0.5)_0.1]O₃–x CaTiO₃ microwave dielectric ceramics was near zero. The optimal microwave dielectric properties of 0.35LaAl_0.9(Mg_0.5Ti_0.5)_0.1O₃–0.65CaTiO₃ were ε_r = 44.6, Q × f = 32,057 GHz, and τ_f = +2 ppm/°C.     

Physical properties of new,lead free (Na0.5Bi0.5)(1−x)BaxTi(1−x)(Fe0.5Nb0.5)xO3 ceramics

This study reports on the synthesis of polycrystalline samples of (Na_0.5Bi_0.5)_(1−x)Ba_xTi_(1−x)(Fe_0.5Nb_0.5)_xO₃ with x=0, 0.025, 0.05, 0.075, and 0.1, using the solid-state reaction technique. It investigates the effects of the substitution of sodium and bismuth by barium in the A site and of titanium by iron and niobium in the B site with regard to the free NBT symmetry and dielectric properties were investigated. The crystallographic and dielectric properties were also investigated. The diffractograms showed that all the samples had a single phase character. The increase of ceramic lattice parameters induced an increase in the size of the perovskite lattice. This increase was caused by the increase of the radii of the A and B sites. Room temperature X-ray data revealed that the ceramic structures underwent a gradual distortion with the increase in the composition fraction. Dielectric permittivity was measured in the temperature range of 120–780 K with frequencies ranging from 1 to 10³ KHz. Three anomalies, namely T_d, T₁ and T_m, were detected and noted to coexist at lower T_d and T_m as the rate of substitutions increased. All the samples exhibited a diffuse phase transition and implied better dielectric permittivity maxima values at temperatures approaching room temperature, since the substitution rate values increased more than that of pure NBT. A relaxor behavior with ΔT_m=14 K and ε'_rmax=3876 at 1 kHz was observed for (Na_0.5Bi_0.5)_0.9Ba_0.1Ti_0.9(Fe_0.5Nb_0.5)_0.1O₃ ceramic.     

Dielectric and impedance spectroscopy of Bi(Ca0.5Ti0.5)O3 ceramic

Bismuth calcium titanate (BiCa_0.5Ti_0.5O₃) ceramic, fabricated by a ceramic processing technique, has been characterized using a variety of experimental techniques. Analysis of basic crystal structure using X-ray diffraction data exhibits the orthorhombic system. Measurements and detailed analysis of some electrical parameters (i.e.,dielectric constant, loss tangent (energy loss), electrical impedance and modulus, conductivity, etc.) of Bi(Ca_0.5Ti_0.5)O₃ in a wide range of frequency (10³–10⁶ Hz) and temperature (30–500 °C) have provided some interesting and useful data and results on structure–properties relationship, conduction mechanism, etc.The role of interface, space charge polarization and Maxwell–Wagner dielectric relaxation in getting high dielectric constant of the material at low frequencies and high temperatures has been discussed. Study of temperature dependence of Nyquist plots clearly shows the contributions of grains in resistive and capacitive properties of the material. The frequency of the applied electric field and temperature strongly affect the dielectric (permittivity and dissipation of energy) and electrical (impedance, electrical modulus and conductivity) characteristics of the material.     

Effects of BiMO3 on dielectric,ferroelectric, and piezoelectric properties of perovskite lead‐free piezoelectric BaTiO3–(Bi0.5Na0.5)TiO3 ceramics

New lead‐free piezoelectric ceramics of 0.9BaTiO₃–(0.1?x)(Bi_0.5Na_0.5)TiO₃–xBiMO₃, M=Al and Ga, where x=0.00‐0.10, were fabricated by the solid‐state reaction technique. The effect of BiMO₃ contents on the perovskite structure, phase transition, and dielectric, ferroelectric, and piezoelectric properties was investigated. X‐ray diffraction patterns showed that the ceramics exhibit a monophasic perovskite phase up to x=0.06, suggesting stabilized perovskite structures with B‐site aliovalent substitutions. Compositional‐dependent phase transitions were observed from tetragonal to pseudo‐cubic phase with increasing BiMO₃ amounts. Al³⁺ ions were found to stabilize the transition temperature of the ceramics, while significantly decreasing transition temperature, and a change in the dielectric peak were found with an increasing amount of Ga³⁺. Regarding Al³⁺ substitution, the remanent polarization (P_r) values were found to decrease slightly with the Al³⁺ amount. With regard to Ga³⁺ substitution, P_r values decreased with the Ga³⁺ amount up to 0.06 and then increased slightly. The ceramics became softer with a higher degree of substitution according to the lower coercive field (E_c), when compared with 0.9BaTiO₃–0.1(Bi_0.5Na_0.5)TiO₃ ceramics. Ceramics with a lower degree of substitution and tetragonal phase showed butterfly strain loops that correlated with normal ferroelectric behavior.     

Piezoelectric Property and Strain Behavior of Pb(Yb0.5Nb0.5)O3–PbHfO3–PbTiO3 Polycrystalline Ceramics

(1?x)Pb(Hf_1?yTi_y)O₃–xPb(Yb_0.5Nb_0.5)O₃ (x = 0.10–0.44, y = 0.55–0.80) ceramics were fabricated. The morphotropic phase boundary (MPB) of the ternary system was determined by X‐ray powder diffraction. The optimum dielectric and piezoelectric properties were achieved in 0.8Pb(Hf_0.4Ti_0.6)O₃–0.2Pb(Yb_0.5Nb_0.5)O₃ ceramics with MPB composition, where the dielectric permittivity ε_r, piezoelectric coefficient d₃₃, planar electromechanical coupling k_p, and Curie temperature T_c were found to be on the order of 1930,480 pC/N, 62%, and 360°C, respectively. The unipolar strain behavior was evaluated as a function of applied electric field up to 50 kV/cm to investigate the strain nonlinearity and domain wall motion under large drive field, where the high field piezoelectric d₃₃* was found to be 620 pm/V for 0.82Pb(Hf_0.4Ti_0.6)O₃–0.18Pb(Yb_0.5Nb_0.5)O₃. In addition, Rayleigh analysis was carried out to study the extrinsic contribution, where the value was found to be in the range 2%–18%.     

Enhanced energy storage properties and stability in (Pb0.895La0.07)(ZrxTi1-x)O3 antiferroelectric ceramics

Recently, the (Pb,La)(Zr,Ti)O₃ antiferroelectric materials with slim-and-slanted double hysteresis loops have been widely drawn in the application of advanced pulsed power capacitors due to its low strain characteristic. In this work, the energy storage properties of (Pb_0.895La_0.07)(Zr_xTi_1-x)O₃ ceramics with different Zr contents are researched thoroughly because the substitution of Ti⁴⁺ by Zr⁴⁺ can reduce the tolerance factor t, enhancing the antiferroelectricity. The polarization-electric field hysteresis loops of the PLZT ceramics become slimmer with increasing Zr content. The highest recoverable energy storage density (W_re) of 3.38 J/cm³ and ultrahigh energy efficiency (η) of 86.5% are achieved in (Pb_0.895La_0.07)(Zr_0.9Ti_0.1)O₃ ceramic. The (Pb_0.895La_0.07)(Zr_0.9Ti_0.1)O₃ ceramic also hold fairly thermal stability (relative variation of W_re is less than 28% over 30 °C-120 °C), excellent frequency stability (10–1000 Hz) and good fatigue endurance. These results demonstrate that the (Pb_0.895La_0.07)(Zr_0.9Ti_0.1)O₃ ceramic can be a desirable material for dielectric energy storage capacitors, especially for pulse power technology.     

Correlation between the structure and modified microwave dielectric characteristics of Zr4+ substituted Ni0.4Zn0.6Ti(1-x)ZrxNb2O8 ceramics

Microwave ceramics are an important classes of materials that are used in microwave communication systems, especially in the area of 5G wireless communication and the internet of things. In this work, to improve the Q×f values and enhance the temperature stability of Ni_0.4Zn_0.6TiNb₂O₈ ceramics, the influence of the substitution of Zr⁴⁺ ions at the Ti site in Ni_0.4Zn_0.6Ti_(1-x)Zr_xNb₂O₈ ceramics was investigated. The Q×f value increases from 32114 GHz to 45733 GHz and the τ_f value changes from 38.1 ppm/°C to 3 ppm/°C with a slight Zr⁴⁺ ion substitution (x = 0.1). Meanwhile, the sample with the Zr⁴⁺ ion substitution (x = 0.3) that was sintered at 1120 °C shows a very high Q×f value of 92078 GHz. Furthermore, the XRD results reveal that the phase and structure of the Ni_0.4Zn_0.6Ti_(1-x)Zr_xNb₂O₈ ceramics change with the different Zr⁴⁺ ion contents. The substitution of the Zr⁴⁺ ion can promote the sintering process for the Ni_0.4Zn_0.6Ti_(1-x)Zr_xNb₂O₈ ceramics and restrain the Ni_0.5Ti_0.5NbO₄ phase formation. The results obtained from Ni_0.4Zn_0.6Ti_(1-x)Zr_xNb₂O₈ ceramics can offer useful information for the study and application of high-frequency microwaves.     

Enhanced relative permittivity in niobium and europium co-doped TiO2 ceramics

The appearance of colossal permittivity materials broadened the choice of materials for energy-storage applications. In this work, colossal permittivity in ceramics of TiO₂ co-doped with niobium and europium ions ((Eu_0.5Nb_0.5)_xTi_1-xO₂ ceramics) was reported. A large permittivity (ε_r ～ 2.01?×?10⁵) and a low dielectric loss (tanδ ～ 0.095) were observed for (Eu_0.5Nb_0.5)_xTi_1-xO₂ (x?=?1%) ceramics at 1?kHz. Moreover, two significant relaxations were observed in the temperature dependence of dielectric properties for (Eu, Nb) co-doped TiO₂ ceramics, which originated from defect dipoles and electron hopping, respectively. The low dielectric loss and high relative permittivity were ascribed to the electron-pinned defect-dipoles and electrons hopping. The (Eu_0.5Nb_0.5)_xTi_1-xO₂ ceramic with great colossal permittivity is one of the most promising candidates for high-energy density storage applications.