Fiber fuse phenomenon in step-index single-mode optical fibers

The unsteady-state thermal conduction process in step-index single-mode (SM) optical fiber was studied theoretically with the explicit finite-difference method. We considered a high-temperature loss-increase mechanism, which includes two factors that bring about an increase in the absorption coefficients: 1) electronic conductivity due to the thermal ionization of a Ge-doped silica core and 2) thermochemical SiO production in silica glass. The core-center temperature changed suddenly and reached over 4/spl times/10/sup 5/ K when a 1.064-/spl mu/m laser power of 2 W was input into the core layer heated at 2723 K. This rapid heating of the core initiated the "fiber fuse" phenomenon. The high-temperature core areas were enlarged and propagated toward the light source. The propagation rates of the fiber fuse, estimated at 1.064 and 1.48 /spl mu/m, were in fair agreement with the experimentally determined values. We found that the threshold power for initiating the fiber fuse increases from 0.98 to 1.26 W when the input laser wavelength is increased from 1.06 to 1.55 /spl mu/m.     

Bragg gratings written in all-SiO/sub 2/ and Ge-doped core fibers with 800-nm femtosecond radiation and a phase mask

Femtosecond laser pulses at 800 nm and 120 fs were used to fabricate high-quality retroreflecting fiber Bragg gratings in standard Ge-doped telecom fiber (Corning SMF-28) and all-silica-core Fluorine doped cladding single-mode fiber using a deep-etch silica zero-order ed phase mask. Induced index modulations of 1.9/spl times/10/sup -3/ were achieved with peak power intensities of 2.9/spl times/10/sup 12/ W/cm/sup 2/ without any fiber sensitization such as hydrogen loading. The fiber gratings have annealing characteristics similar to type II damage fiber gratings and demonstrate stable operation at temperatures as high as 950/spl deg/C. The grating devices exhibit low polarization dependence. The primary mechanism of induced index change results from a structural modification to the fiber core.     

Fiber fuse phenomenon in triangular-profile single-mode optical fibers

The unsteady-state thermal conduction processes in triangular-profile (TP) optical fibers, which exhibited zero chromatic dispersion near 1.55 /spl mu/m, were studied theoretically with the explicit finite-difference method (FDM). It was estimated that these fibers would exhibit a high-temperature optical absorption on the basis of the high-temperature loss-increase mechanism proposed for step-index (SI) optical fibers. The core-center temperature of the TP fibers changed suddenly and reached over 7/spl times/10/sup 5/ K when a 1.064-/spl mu/m laser power of 1 W was inputted into the core layer heated at 2608 K. This rapid heating of the core initiated the "fiber fuse" phenomenon. The propagation rates of the fiber fuse, estimated at 1.064 /spl mu/m, were in fairly good agreement with the experimentally determined values. It was found that the threshold powers for initiating the fiber fuse are linearly proportional to the roots of the effective core areas of both the SI and the TP optical fibers. This coincides the experimental result reported by Seo et al.     

Simulation of fiber fuse phenomenon in single-mode optical fibers

The unsteady-state thermal conduction process in single-mode (SM) optical fiber was studied theoretically with the explicit finite-difference method (FDM). In the numerical calculation it was assumed that the electrical conductivity of the core layer increased rapidly above 1323 K. The core-center temperature changed suddenly and reached over 3/spl times/10/sup 5/ K when an optical power of 1 W was input into the core layer heated at 1373 K. This rapid heating of the core initiated the "fiber fuse" phenomenon. The high-temperature core areas, whose radiation spectrum extended over a wide range from the infrared to the ultraviolet regions, were enlarged and propagated toward the light source at a rate of about 0.7 m s/sup -1/. This rate was in fair agreement with the experimentally determined value.     

Efficient amplification using the /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 9/2/ transition in Nd-doped silica fiber

Amplification characteristics of the three-level /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 9/2/ transition in Nd-doped silica glass fiber are investigated under strong signal saturation and high pump power (150 mW). Aluminum codoped Nd-silica fibers exhibit strong superfluorescent behavior in the four-level /sup 4/F/sub 3/2//spl rarr//sup 4/I/sub 11/2/ transition which limits the optical conversion efficiency into the three-level transition. Ge-doped silica fibers do not exhibit this limitation and can efficiently amplify in the three-level transition with current laser-diode pump technology.     

High-speed photography, spectra, and temperature of optical discharge in silica-based fibers

The dynamics of fiber fuse effect including process of bubble formation in fiber core was investigated. Bubbles in the core were observed not later than 20/spl divide/70 /spl mu/s after the plasma forepart passed. For the first time, the temperature of optical discharge was measured for a wide range of laser radiation powers. For 40-W laser power, the temperature reached 10/sup 4/ K, the velocity of discharge propagation having increased to 10 m/s.     

Multiwavelength diode-cladding-pumped Nd/sup 3+/-doped germano-aluminosilicate fiber laser

Simultaneous multiwavelength oscillation at 1060 and 1090 nm has been produced from a free-running Nd/sup 3+/-doped multicomponent silica fiber laser. As a result of co-doping with both Al/sub 2/O/sub 3/ and GeO/sub 2/, the Nd/sup 3+/ ions are situated at separate sites relating to either Al/sup 3+/-rich or Ge/sup 4+/-rich regions of the germano-aluminosilicate glass. The slope efficiency of the combined /spl sim/1-/spl mu/m output was /spl sim/52% (56%) with respect to the launched (absorbed) pump power. The 1060-nm emission reaches threshold first because of the greater number of Nd/sup 3+/ ions that are located at Al/sup 3+/-rich sites. On chopping the pump light the relaxation oscillations relating to the 1090-nm emission are antiphase with the oscillations observed with the 1060-nm emission. A degree of spectral overlap exists between the fluorescence emitted from Nd/sup 3+/ ions located at each site. Power equalization (to /spl sim/1 W each) of the 1060- and 1090-nm emissions was carried out by way of Raman amplification that occurred either internally or externally to the Nd/sup 3+/-doped silica fiber laser.     

Silica-clad neodymium-doped lanthanum phosphate fibers and fiber lasers

We have fabricated a neodymium-doped phosphate glass fiber with a silica cladding and used it to form a fiber laser. Phosphate and silicate glasses have considerably different glass transition temperatures and softening points making it hard to draw a fiber from these two glasses. A bulk phosphate glass of composition (Nd/sub 2/O/sub 3/)/sub 0.011/(La/sub 2/O/sub 3/)/sub 0.259/(P/sub 2/O/sub 5/)/sub 0.725/(Al/sub 2/O/sub 3/)/sub 0.005/ was prepared and the resultant material was transparent, free from bubbles and visibly homogeneous. The bulk phosphate glass was drawn to a fiber while being jacketed with silica and the resultant structure was of good optical quality, free from air bubbles and major defects. The attenuation at a wavelength of 1.06 /spl mu/m was 0.05 dB/cm and the refractive index of the core and cladding at the pump wavelength of 488 nm was 1.56 and 1.46, respectively. The fibers were mechanically strong enough to allow for ease of handling and could be spliced to conventional silica fiber. The fibers were used to demonstrate lasing at the /sup 4/F/sub 3/2/-/sup 4/I/sub 11/2/ (1.06 /spl mu/m) transition. Our work demonstrates the potential to form silica clad optical fibers with phosphate cores doped with very high levels of rare-earth ions (27-mol % rare-earth oxide).     

Midinfrared holmium fiber lasers

The use of the high-power Tm/sup 3+/-doped silica fiber laser as a pump source for Ho/sup 3+/-doped silica and Ho/sup 3+/-doped fluoride fiber lasers for the generation of 2.1-/spl mu/m radiation is demonstrated. The Ho/sup 3+/-doped silica fiber laser produced a maximum output power of 1.5 W at a slope efficiency of /spl sim/82%; one of the highest slope efficiencies measured for a fiber laser. In a nonoptimized but similar fiber laser arrangement, a Ho/sup 3+/-doped fluoride fiber laser produced an output power of 0.38 W at 2.08 /spl mu/m at a slope efficiency of /spl sim/50%. A Raman fiber laser operating at 1160 nm was also used to pump a Ho/sup 3+/-doped fluoride fiber laser operating at a wavelength of 2.86 /spl mu/m. An output power of 0.31W was produced at a slope efficiency of 10%. The energy transfer upconversion process that depopulates the lower laser level in this case operates at a higher efficiency when the pump wavelength is closer to the absorption peak of the /sup 5/I/sub 6/ energy level, however, this energy transfer process does not impede to a great extent the performance of the Ho/sup 3+/-doped fluoride fiber laser based on the /spl sim/2.1/spl mu/m laser transition.     

Thermal transport properties of gold-covered thin-film silicon dioxide

Due to continued miniaturization, the performance and reliability of electronic devices composed of multiple thin layers of material are highly dependent on effective thermal management. Since the thermal properties of thin films, such as SiO/sub 2/, can vary considerably from bulk values, the determination of those properties (as well as the interface resistance between SiO/sub 2/ and adjacent layers) is critical for the purposes of design. In this work, a transient thermo-reflectance system has been employed to measure the thermal characteristics of thin-film SiO/sub 2/ layers. Results show that for layers of SiO/sub 2/ in the range of 100-1000 /spl Aring/, the intrinsic thermal conductivity (TC) is independent of thickness and smaller than the traditionally reported value of bulk silicon dioxide (1.4 W/m-K). The intrinsic value was measured to be around 90% (1.27 W/m-k) and 75% (1.05 W/m-k) of the latter bulk value for thermally grown (TG) and ion beam sputtered (IBS) oxides, respectively. The thermal interface resistances of TG and IBS SiO/sub 2/ films were measured at 1.68 /spl times/ 10/sup -8/ m/sup 2/-K/W and 2.58 /spl times/ 10/sup -8/ m/sup 2/-K/W, respectively. If a chromium film of around 100 /spl Aring/ is deposited between the gold and SiO/sub 2/ layers, the interface thermal resistance improves to 0.78 /spl times/ 10/sup -8/ m/sup 2/-K/W for TG films and 1.15 /spl times/ 10/sup -8/ m/sup 2/-K/W for IBS films. Thus, the effective thermal resistance of SiO/sub 2/ thin-films (i.e., with interface effects) is up to one order of magnitude smaller than the values reported for bulk SiO/sub 2/.     

Evaluation of High-Temperature Absorption Coefficients of Ionized Gas Plasmas in Optical Fibers

The large absorption coefficient $alpha$ of a fiber core at high temperatures is closely related to the generation of a fiber fuse. When silica glass is heated to a temperature above 4500 K, it forms Si $^{+}$ and O $^{+}$ ions and electrons in the ionized gas plasma state. We estimate the $alpha$ value for the plasma in the fiber core at high temperatures. $alpha$ begins to increase at 3500 K, then increases rapidly with increasing temperature above 4000 K, reaching a value of $1times 10^{7}$ m$^{-1}$ at 6000 K. This value is about 300 times that necessary for initiating a fiber fuse.      

Penalty-free dispersion-managed soliton transmission over a 100-km low-loss PCF

A long photonic-crystal fiber (PCF) with a low loss was successfully fabricated by first preparing a large pure silica glass preform. The fiber is 100 km long and has a low loss of 0.3 dB/km at 1550 nm. The fiber has a Rayleigh scattering coefficient of 0.85 dB/(km/spl middot//spl mu/m/sup 4/), which is the lowest value ever reported in a PCF. Using this fiber, the first penalty-free dispersion-managed soliton transmission at 10 Gb/s was achieved in a PCF.     

Germania-based core optical fibers

Germania-glass-based core silica glass cladding single-mode fibers (/spl Delta/n up to 0.143) with a minimum loss of 20 dB/km at 1.9 /spl mu/m were fabricated by the modified chemical vapor deposition (MCVD) method. The fibers exhibit strong photorefractivity with the type-IIa-induced refractive-index modulation of 2/spl times/10/sup -3/. The Raman gain of 300 to 59 dB/(km/spl middot/W) was determined at 1.07 to 1.6 /spl mu/m, respectively, in a 75 mol.% GeO/sub 2/ core fiber. Only 3 m of such fibers are enough for the creation of a 10-W Raman laser at 1.12 /spl mu/m with a 13-W pump at 1.07 /spl mu/m. Raman generation in optical fiber at a wavelength of 2.2 /spl mu/m was obtained for the first time.     

Fabrication of Germanosilicate glass optical fibers containing Tm/sup 2+/ ions and their nonlinear optical properties

Germanosilicate glass optical fibers incorporated with the Tm/sup 2+/ ions were fabricated to enhance optical nonlinearity by providing a strong reduction environment based on the solution doping technique in the modified chemical vapor deposition (MCVD) process. The incorporation of the Tm/sup 2+/ ions into the fiber core was identified by the electron paramagnetic resonance (EPR) spectrum in the fiber preform, and the absorption and emission properties between 350 and 1600 nm of the Tm/sup 2+/ ions in optical fibers and the fiber preform. A strong broad absorption band due to the Tm/sup 2+/ ions appeared from 350 to /spl sim/900 nm, and a broad emission from /spl sim/600 to /spl sim/1050 nm and the other emission from /spl sim/1050 to /spl sim/1300 nm, which were not shown in the Tm/sup 3+/ ions, were found upon Ar-ion laser pumping at 515 nm. Both absorption and emission results confirm that the Tm/sup 2+/ ions in the germanosilicate glass have the 4f-5d energy band from 350 to /spl sim/900 nm and the 4f-4f energy level at /spl sim/1115 nm. Also, the resonant nonlinearity at /spl sim/1310 and /spl sim/1530 nm due to the Tm/sup 2+/ ions in the fiber was measured upon the 515 nm optical pumping by using a long-period fiber grating (LPG) pair method. The nonlinear refractive index n/sub 2/ at /spl sim/1310 and /spl sim/1530 nm was found to be /spl sim/4/spl times/10/sup -15/ m/sup 2//W, where 70% and 30% of the n/sub 2/ are attributed to the nonradiative transitions and the radiative transitions, respectively.     

High performance quantum dot lasers on GaAs substrates operating in 1.5 /spl mu/m range

Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs-InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy. High quantum efficiency (/spl eta//sub i/>60%) and low internal losses (/spl alpha/<3-4 cm/sup -1/) are realised. The transparency current density per single QD layer is estimated as /spl sim/70 A/cm/sup 2/ and the characteristic temperature is 60 K (20-85/spl deg/C). The emission wavelength exceeds 1.51 /spl mu/m at temperatures above 60/spl deg/C.     

Analysis and optimization of Q-switched operation of a Tm/sup 3+/-doped silica fiber laser operating at 2 /spl mu/m

Analysis and operation of a Q-switched Tm/sup 3+/-doped silica fiber laser in the wavelength region of 2 /spl mu/m is described when pumped with a Nd:YAG laser operating at 1.319 /spl mu/m. A large core of 17-/spl mu/m diameter was used to increase the laser gain volume, allowing high pump-power absorption and an output of high pulse energy and peak power. An acoustooptic modulator was used as Q-switching element and operated at repetition rates up to 30 kHz. A maximum peak output power of greater than 4 kW and a pulse duration at full-width at half-maximum of 150 ns has been obtained. This is the first report of high peak-power operation of the thulium-doped silica fiber laser.     

Improved-performance, InGaAs/InGaAsP (/spl lambda/=980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping

Doping the waveguide core (p=2/spl times/10/sup 17/ cm/sup -1/) in asymmetric-waveguide InGaAs/InGaAsP, two-quantum-well diode lasers (/spl lambda/=980 nm) raises the injection efficiency to 90% and decreases the threshold-current density, J/sub th/. For 2 mm long, 100 /spl mu/m wide stripe, uncoated chips J/sub th/ decreases from /spl sim/188 A/cm/sup 2/ to /spl sim/150 A/cm/sup 2/. High characteristic temperatures for J/sub th/ and the slope efficiency are obtained: T/sub 0/=215K and T/sub 1/=600K.     

Gigabit/s Optical Receiver Sensitivity and Zero-Dispersion Single-Mode Fiber Transmission at 1.55 µm

High-speed pulse response and receiver sensitivity at 1.55 µm were measured at data rates ranging from 400 Mbits/s to 2 Gbits/s, in order to elucidate characteristics of a reach-through p/sup +/nn/sup -/ Ge APD. The p/sup +/nn/sup -/ Ge APD receiver provided a 2 Gbit/s received optical power level of -32.0 dBm at 1.55 µm and a 10/sup -9/ error rate, which was 4 dB better than the receiving level with a p/sup +/n Ge APD. Detector performance at 1.3 µm was also studied for comparison with performance at 1.55 um. Single-mode fibers, which have 0.54 dB/km loss and zero dispersion at 1.55 µm, and an optical transmitter-receiver, whose repeater gain is 29.2 dB, have enabled 51.5 km fiber transmission at 2 Gbits/s. The transmission system used in this study has a data rate repeater-spacing product of 103 (Gbits/s) /spl dot/ km at 1.55 µm. Optical pulse broadening and fiber dispersion were also studied, using 1.55 and 1.3 µm dispersion free fibers. Future repeater spacing prospects for PCM-IM single-mode fiber transmission systems are discussed based on these experimental results.     

Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates

We fabricated CMOS circuits from polycrystalline silicon films on steel foil substrates at process temperatures up to 950/spl deg/C. The substrates were 0.2-mm thick steel foil coated with 0.5-/spl mu/m thick SiO/sub 2/. We employed silicon crystallization times ranging from 6 h (600/spl deg/C) to 20 s (950/spl deg/C). Thin-film transistors (TFTs) were made in either self-aligned or nonself-aligned geometries. The gate dielectric was SiO/sub 2/ made by thermal oxidation or from deposited SiO/sub 2/. The field-effect mobilities reach 64 cm/sup 2//Vs for electrons and 22 cm/sup 2//Vs for holes. Complementary metal-oxide-silicon (CMOS) circuits were fabricated with self-aligned TFT geometries, and exhibit ring oscillator frequencies of 1 MHz. These results lay the groundwork for polycrystalline silicon circuitry on flexible substrates for large-area electronic backplanes.