Fe/(Ga,Mn)As异质结的界面结构和磁性质

Fe/（Ga,Mn）As heterostructures were fabricated by all molecular-beam epitaxy.Double-crystal X-ray diffraction and high-resolution cross-sectional transmission electron micrographs show that the Fe layer has a well ordered crystal orientation and an abrupt interface.The different magnetic behavior between the Fe layer and（Ga, Mn）As layer is observed by superconducting quantum interference device magnetometry.X-ray photoelectron spectroscopy measurements indicate no Fe₂As and Fe-Ga-As compounds,i.e.,no dead magnetic layer at the interface, which strongly affects the magnetic proximity and the polarization of the Mn ion in a thin（Ga,Mn）As region near the interface of the Fe/（Ga,Mn）As heterostructure.     

Structural studies of ZnS:Cu (5 at %) nanocomposites in porous Al<Subscript>2</Subscript>O<Subscript>3</Subscript> of different thicknesses

We present EXAFS, XANES, and X-ray diffraction data on nanoscale ZnS:Cu (5 at %) structures fabricated by the thermal deposition of a ZnS and Cu powder mixture in porous anodic alumina matrices with a pore diameter of 80 nm and thicknesses of 1, 3, and 5 μm. The results obtained are compared with data on ZnS:Cu films deposited onto a polycor surface. According to X-ray diffraction data, the samples contain copper and zinc compounds with sulfur (Cu₂S and ZnS, respectively); the ZnS compound is in the cubic (sphalerite) and hexagonal (wurtzite) modifications. EXAFS and XANES studies at the K absorption edges of zinc and copper showed that, in samples deposited onto polycor and alumina with thicknesses of 3 and 5 μm, most copper atoms form the Cu₂S compound, while, in the sample deposited onto a 1-μm-thick alumina layer, copper atoms form metallic particles on the sample surface. Copper crystals affect the Zn–S interatomic distance in the sample with a 1-μm-thick porous Al₂O₃ layer; this distance is smaller than in the other samples.     

Reconstruction transition (4×2) → (2×4) on the (001) surfaces of InAs and GaAs

Phase transitions involving various atomic configurations on the (001) surfaces of GaAs and InAs were studied by RHEED. A kinetic scheme of the interaction between the As₄ flow and the surface is proposed and the main equations describing the transitions are modified so as to correspond to the As₄ (rather than As₂) flux. A model of the (4×2) → (2×4) transition is suggested for reconstruction of a layer of metal atoms with subsequent stabilization by the adsorption of arsenic atoms. A considerable difference of the surface transitions in GaAs from that in InAs consists in greater force constants (more rigid bonds) in the former case. A significant role in the continuous evolution from (2×4)β to (4×2) phase in GaAs belongs to metastable disordered phases.     

A comparison of liquid and gas phase surface preparation of III-V compound semiconductors for atomic layer deposition

Native oxide removal and surface termination of InAs(1 0 0) and InSb(1 0 0) using liquid and gas phase HF chemistries were studied using X-ray photoelectron spectroscopy. Aqueous HF etching removed the native oxides on InAs and produced elemental As, which reoxidized when exposed to air. On InSb the native oxides were not completely removed due to F-termination, which passivated the surface. Gas phase HF etching of InSb native oxide completely removed Sb₂O₅ producing a stoichiometric semiconductor surface terminated by F atoms on primarily In surface sites. On InAs gas phase HF completely removed As₂O₃ producing two surface stoichiometries. For the majority of HF to water molar ratios studied, a stoichiometric bulk metal and an As-rich overlayer were produced. For a lean HF composition, an As-rich bulk metal and In-rich overlayer were produced. Deposition of Al₂O₃ by atomic layer deposition (ALD) at 170 °C directly onto F-terminated InSb produced a chemically sharp Al₂O₃/InSb interface. ALD of Al₂O₃ on an In-rich overlayer on InAs resulted in an interfacial layer containing As-oxide.     

Diluted magnetic semiconductors: Actual structure and magnetic and transport properties

An experimental investigation is conducted into electrical-transport, magnetic, optical, and structural properties of GaAs-based diluted-magnetic-semiconductor heterostructures containing a Ga_1?x In _x As quantum well and a Mn delta layer 0.5–1.8 ML thick, separated by a GaAs spacer of thickness 3 nm. Ferromagnetic features are observed in the electrical transport and the Hall effect, which involve the flow of holes across the quantum well. They indicate carrier spin polarization in the quantum well. The combined use of high-resolution x-ray diffraction and x-ray reflectivity has made it possible to reliably identify structural-parameter profiles for both the quantum well and the Mn delta layer. It is thus established that the distribution of Mn atoms is nonuniform, both horizontally and vertically. This finding suggests a conception whereby the Mn delta layer divides into nanoscale ferromagnetic-ordering regions and paramagnetic regions. Magnetic and electrical-transport properties of the heterostructures are discussed within this framework.     

The effect of amorphization on the local structure of arsenic chalcogenides

The effect of amorphization on the symmetry of the local environment of chalcogen atoms in As₂S₃, As₂Se₃, and As₂Te₃ compounds has been investigated by ¹²⁹Te(¹²⁹I) Mössbauer spectroscopy. Three states of triply coordinated tellurium atoms are indistinguishable in the Mössbauer spectra of crystalline As₂Te₃. Amorphization of As₂Te₃ decreases the local symmetry of triply coordinated states of Te atoms and leads to the formation of doubly coordinated states in -As-Te-Te-As- chains. In the structure of crystalline As₂S₃ and As₂Se₃, two states of doubly coordinated chalcogen atoms X in -As-X-As- chains manifest themselves in the broadening of the Mössbauer spectra. Amorphization of As₂S₃ and As₂Se₃ is not accompanied by a change in the local symmetry of doubly coordinated chalcogen atoms in -As-X-As- chains; however, doubly coordinated states of S and Se atoms in -As-X-X-As chains are formed in the amorphous material.     

Surface Reconstruction,Oxidation Mechanism,and Stability of Cd3As2

Cadmium arsenide (Cd₃As₂) has recently attracted considerable interest for the presence of 3D massless Dirac fermions with ultrahigh mobility and magnetoresistance. However, its surface properties are currently largely unexplored both theoretically and experimentally, due to the very large unit cell and the challenging growth of single‐crystal samples, respectively. Here, by combining ab initio calculations with surface‐science spectroscopic experiments, the presence of a surface reconstruction is unveiled in centimeter‐scale (112)‐oriented Cd₃As₂ single‐crystal foils produced by the self‐selecting vapor growth. Outermost Cd atoms descend into the As‐sublayer with a subsequent self‐passivation of the dangling bonds with As atoms, forming the triangle lattice previously imaged by scanning tunneling microscopy. Moreover, the oxidation mechanism of this reconstructed surface, dominated by the formation of As? O? Cd bonds, is revealed. Interestingly, it is found that the band structure of the reconstructed surface of Cd₃As₂ is quite robust against surface oxidation. Both computational and experimental findings point to a successful exploitation in technology of Cd₃As₂ single crystals.     

Pore sealing of mesoporous silica low-k dielectrics by oxygen and argon plasma treatments

In this study, we have prepared surfactant templated mesoporous silica thin films as the ultralow-k dielectrics and a TaN_X thin film deposited by plasma enhanced atomic layer chemical vapor deposition (PE-ALCVD) using TaCl₅ as the gas precursor was used as the diffusion barrier. Without any surface modification for the dielectric layer, Ta atoms could easily diffuse into the mesoporous layer seriously degrading dielectric properties. O₂ and Ar plasmas have been used to modify the surface of the mesoporous dielectric in a high density plasma chemical vapor deposition (HDP-CVD) system, and both of the treatments produced a densified oxide layer a few nanometer thick. According to transmission electron microscopy and Auger electron spectroscopy, the pore sealing treatment could effectively prevent Ta atoms from diffusing into the mesoporous dielectric during the PE-ALCVD process.     

Solid source MBE growth of InAsP/InP quantum wells

Strained InAsP multiquantum wells (MWQs) were grown on InP(100) substrates by solid source molecular beam epitaxy and were characterized to relate structural and optical quality to growth conditions. The multiquantum wells were grown using either dimer or tetramer arsenic (As₂ or As₄) over the substrate temperature range of 420–535°C. θ-2θ x-ray diffraction measurements showed only slight differences between arsenic compositions in the quantum wells grown with As₂ or As₄. 300K and 8K photoluminescence full width at half max (FWHM) decreased at higher growth temperatures regardless of the arsenic species used. The 8K photoluminescence FWHM and the surface roughness measured by atomic force microscopy are found to be less sensitive to substrate growth temperature for the multiquantum wells growth with As₂ as opposed to As₄.     

Optimization of active region for 1.3-µm GalnAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes

We report on the optimization of Ga_0.27In_0.73As_0.67P_0.33/Ga_0.11In_0.89As_0.24P_0.76 compressive-strain multiple-quantum-well (CS-MQW) grown by low-pressure metalorganic chemical vapor deposition for 1.3-μm ridge-waveguide laser diodes (LDs). The structural and optical properties are characterized by doublecrystal x-ray diffraction and photoluminescence (PL) measurements, respectively. The optimum thicknesses of the well, barrier, and waveguide layer of the active region are 4 nm, 10 nm, and 100 nm, respectively. The GaInAsP/GaInAsP CS-MQW as-cleaved LDs with the optimum active region, a 3.5-μm-width ridge, and a 900-μm-cavity length exhibit the threshold current density of 1.09 kA/cm², a differential quantum efficiency of 30%, a characteristic temperature of 60 K, a maximum operating temperature up to 75°C, and a redshift rate of 0.30 nm/°C.     

Incorporation of Sn on GaAs (111)A substrates by molecular beam epitaty

Behavior of Sn as donor species in the MBE growth of GaAs on (111)A substrates has been investigated by varying the growth temperature from 460 to 620°C, As₄:Ga flux ratio from 4 to 25, and Sn concentration from 10¹⁶ to 10²⁰ atoms cm^-3. Secondary ion mass microscopy measurements show that Sn does not surface segregate on (111)A substrates under this growth condition, in contrast to that on (001) substrates. Sn is uniformly incorporated throughout the bulk of the grown layer for all samples, apart from the most highly doped ones. To increase the Sn carrier concentration on the (111)A substrates, the measured carrier concentration shows that doping should be carried out at a low growth temperature and/or high As₄:Ga flux ratio.     

Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions

Impurity ^119m Sn atoms arising as a result of radioactive decay of parent ^119mm Sn atoms in the structure of the glasses As₂S₃, As₂Se₃, and As₂Te₃ are part of the glass composition in the form of structural units corresponding to tetravalent tin. The impurity ^119m Sn atoms formed as a result of radioactive decay of ¹¹⁹Sb atoms in the structure of the As₂S₃ and As₂Se₃ glasses are localized at the arsenic sites and play the role of two-electron centers with a negative correlation energy. For the As₂Te₃ glass, similarly formed ^119m Sn atoms are electrically inactive. The greatest part of the daughter ^119m Sn atoms arising after radioactive decay of parent ^119m Te atoms are located at the chalcogen sites and are electrically inactive in the As₂S₃, As₂Se₃, and As₂Te₃ glasses. A significant recoil energy of daughter atoms in the case of the ^119m Te radioactive decay brings about the appearance of the ^119m Sn displaced atoms.     

Chemical vapor deposition of B12As2 thin films on 6H-SiC

Icosahedral boron arsenide (B₁₂As₂) thin films were deposited on 6H-SiC substrates by chemical vapor deposition using B₂H₆ and AsH₃ sources. X-ray diffraction analysis of the thin films showed them to have the rhombohedral crystal structure and lattice parameters of B₁₂As₂. Transmission electron microscopy showed that the films were polycrystalline with oriented crystal grains. The preferential orientation of the film with respect to the SiC substrate was determined to be: [0001]_B12_{As 2}//[0001]_6H-SiC and [ ]_B12_{As 2}//[ ]_6H-SiC to within 3°. Electron diffraction also revealed the extremely small lattice mismatch (<0.5%) between the B₁₂As₂ basal-plane lattice parameter and twice the SiC basal-plane lattice parameter.     

Iron and manganese doped zinc-blende GaN

The electronic structure of Mn and Fe doping impurities in zinc-blende gallium nitride (c-GaN) crystal lattice have been investigated by the LMTO-TB method. The calculations used the 128 site supercells (64 atoms and 64 empty spheres with an impurity at the origin) with Mn and Fe atoms replacing ions in cation and anion sublattices. It is shown that Mn and Fe ions stay magnetic for all types of substitutions in c-GaN crystal lattice. Fe magnetic moment was found to be 3.5μ_B and 1.0μ_B for cation and anion substitutions, respectively. Similar data for Mn, magnetic moments are 3.3μ_B and 1.9μ_B. The moments are highly localized, though some weak polarization is seen at the closest atoms to the impurity. The total energies for supercells with and without magnetic impurities are used to determine the most probable single substitutional sites for Fe and Mn in c-GaN. The energies of magnetic electrons levels relative to the valence and conduction bands of the host crystal are analyzed by making use of the total and partial densities of states. The results show that combination of optoelectronic and magnetic properties may well be possible for c-GaN iron and Mn doped systems.     

Intermetallic Reaction of Indium and Silver in an Electroplating Process

The reaction of indium (In) and silver (Ag) during the electroplating process of indium over a thick silver layer was investigated. It was found that the plated In atoms react with Ag to form AgIn₂ intermetallic compounds at room temperature. Indium is commonly used in the electronics industry to bond delicate devices due to its low yield strength and low melting temperature. In this study, copper (Cu) substrates were electroplated with a 60-μm-thick Ag layer, followed by electroplating an In layer with a thickness of 5 μm or 10 μm, at room temperature. To investigate the chemical reaction between In and Ag, the microstructure and composition on the surface and the cross section of samples were observed by scanning electron microscopy (SEM) with energy-dispersive x-ray spectroscopy (EDX). The x-ray diffraction method (XRD) was also employed for phase identification. It was clear that indium atoms reacted with underlying Ag to form AgIn₂ during the plating process. After the sample was stored at room temperature in air for 1 day, AgIn₂ grew to 5 μm in thickness. With longer storage time, AgIn₂ continued to grow until all indium atoms were consumed. The indium layer, thus, disappeared and could barely be detected by XRD. Jong S. Kim now with Applied Materials.     

In0.53Ga0.47As(1 0 0) native oxide removal by liquid and gas phase HF/H2O chemistries

The native oxide removal, surface termination, and stoichiometry of InGaAs(1 0 0) surfaces using liquid and gas phase HF/H₂O etching were studied using X-ray photoelectron spectroscopy. Oxide removal in liquid phase HF stopped at the As layer, producing either elemental or H-terminated As. The surface oxidized upon air exposure, forming a 4.8 Å As₂O₃ layer on an As rich InGaAs sub-surface (17% In, 16% Ga, 66% As). A sub atmospheric gas phase HF/H₂O process (100 Torr, 29 °C, 0.5 min) completely removed As₂O₃ and produced mainly In and Ga fluorides, since As fluoride is volatile at these experimental conditions. Once enough F accumulated on the surface, the water sticking probability decreased and the etching reaction proceeded at a much lower rate. The highest oxide removal (4.2 Å residual oxide) was achieved after 5 min of etching. As₂O₃ and As₂O₅ were completely removed and considerably more InF₃ and GaF₃ were produced. The surface contained a group III-fluoride rich overlayer (34% In, 36% Ga) on a slightly As rich bulk (21% In, 21% Ga, and 58% As). The As rich InGaAs sub-surface produced with both liquid and the longer gas phase HF treatments is intrinsic to HF-InGaAs chemistry, although the oxide removal mechanism is likely different.     

Multilayer Hybrid Films Consisting of Alternating Graphene and Titania Nanosheets with Ultrafast Electron Transfer and Photoconversion Properties

Alternating graphene (G) and titania (Ti_0.91O₂) multilayered nanosheets are fabricated using layer‐by‐layer electrostatic deposition followed by UV irradiation. Successful assemblies of graphene oxide (GO) and titania nanosheets in sequence with polyethylenimine as a linker is confirmed by UV–vis absorption and X‐ray diffraction. Photocatalytic reduction of GO into G can be achieved upon UV irradiation. Ultrafast photocatalytic electron transfer between the titania and graphene is demonstrated using femtosecond transient absorption spectroscopy. Efficient exciton dissociation at the interfaces coupled with cross‐surface charge percolation allows efficient photocurrent conversion in the multilayered Ti_0.91O₂/G films.     

Arsenic incorporation in MBE grown Hg1−xCdxTe

The p-type doping of Hg_1−xCd_xTe (MCT) has proven to be a significant challenge in present day MCT-based detector technology. One of the most promising acceptor candidates, arsenic, behaves as an amphoteric dopant which can be activated as an acceptor during Hg-rich, low temperature annealing of as-grown molecular beam epitaxy (MBE) samples. This study focuses on developing an understanding of the microscopic behavior of arsenic incorporation during MBE growth. In particular, the question of whether arsenic incorporates as individual As atoms, as As₂ dimers, or as As₄ tetramers is addressed for MBE growth with an As₄ source. A quasithermodynamical model is employed to describe the MCT growth and As incorporation, with parameters fitted to an extensive database of samples grown at the Microphysics Laboratory. The best fits for growth temperatures between 175 and 185°C are obtained for arsenic incorporation as As₄ or possibly as As₄ clusters, with lower probabilities for As₂ and individual As atoms. Based on these results, we investigate the relaxed atomic configurations of As₄ and As₂ in bulk HgTe by ab initio total energy calculations. The calculations are performed in the pseudopotential density-functional framework within the local density approximation, employing supercells with periodic boundary conditions. The lattice distortions due to As₄ and As₂ in bulk HgTe are predicted to be modest due to the small size of these arsenic clusters.     

Properties of Mn-doped Cu2O semiconducting thin films grown by pulsed-laser deposition

Semiconducting oxides offer the potential for exploring and understanding spin-based functionality in a semiconducting host material. Theoretical predictions suggest that carrier-mediated ferromagnetism should be favored for p-type material. Cu₂O is a p-type, direct wide bandgap oxide semiconductor that may hold interest in exploring spin behavior. In this paper, the properties of Mn-doped Cu₂O are described. Activities focused on understanding Mn incorporation during thin-film synthesis, as well as magnetic characterization. The epitaxial films were grown by pulsed-laser deposition. X-ray diffraction was used to determine film crystallinity and to address the formation of secondary phases. SQUID magnetometry was employed to characterize the magnetic properties. Ferromagnetism is observed in selected Mn-doped Cu₂O films, but appears to be associated with Mn₃O₄ secondary phases. In phase-pure Mn-doped Cu₂O films, no evidence for ferromagnetism is observed.     

Antisite arsenic incorporation in the low temperature MBE of gallium arsenide: Physics and modeling

A stochastic model for simulating the surface growth processes in the low temperature molecular beam epitaxy of gallium arsenide is developed to investigate the incorporation of antisite As and its dependence on the growth conditions including the dynamics of the physisorbed As on the surface. Three different kinetic models with a combination of surface kinetic processes such as incorporation of antisite As, evaporation of antisite As and incorporation of regular As. The kinetic model with all three surface processes was accepted as the best model due to its physical soundness and reasonableness of its model parameters. The arsenic flux, temperature, and growth rate dependences of antisite arsenic (As_Ga) obtained from our simulation are in excellent agreement with the experimental results. The activation energy of 1.16 eV and a frequency factor of 4×10¹²/s for the evaporation of antisite arsenic obtained from our model are in good agreement with experimental and theoretical estimates. At a constant substrate temperature and growth rate, the antisite arsenic concentration increases with arsenic flux for low fluxes and saturates beyond a critical flux. The critical arsenic flux increases with temperature and the saturation value of the As_Ga concentration decreases with temperature. As the arsenic flux increases, the coverage of the physisorbed layer increases and at a critical flux dictated by the fixed temperature and growth rate, the coverage saturates at its maximum value of unity (a complete monolayer) and hence the concentration of As_Ga saturates. Lower As_Ga concentration results at higher temperature due to more evaporation of As_Ga. Additionally, an analytical model is developed to predict the As_Ga concentration for various growth conditions.