基片温度对强流脉冲离子束烧蚀等离子体沉积类金刚石薄膜结构和性能的影响

利用强流脉冲离子柬(High-intensity pulsed ion beam-HIPIB)烧蚀等离子体技术在Si(100)基体上沉积类金刚石(Diamond-like carbon-DLC)薄膜，基片温度的变化范围从25℃(室温)到400℃。利用Raman谱、X射线光电子谱(XPS)、X射线衍射(XRD)和原子力显微镜(AFM)研究基片温度对DLC薄膜的化学结合状态、表面粗糙度、薄膜显微硬度和薄膜内应力的影响。根据XPS和Raman谱分析得出，基片温度低于300℃时，sp3C杂化键的含量大约在40％左右；从300℃开始发生sp3C向sp2C的石墨化转变。随着沉积薄膜时基片温度的提高，DLC薄膜中sp3C的含量降低，由25℃时42．5％降到400℃时8．1％，XRD和AFM分析得出，随着基片温度的增加，DLC薄膜的表面粗糙度增大，薄膜的纳米显微硬度降低，摩擦系数提高，内应力降低。基片温度为100℃时沉积的DLC薄膜的综合性能最好，纳米显微硬度22GPa，表面粗糙度为0．75nm，摩擦系数为0．110。     

基片温度对强流脉冲离子束烧蚀等离子体沉积类金刚石薄膜结构和性能的影响

利用强流脉冲离子束 (High intensitypulsedionbeam HIPIB)烧蚀等离子体技术在Si(1 0 0 )基体上沉积类金刚石 (Dia mond likecarbon DLC)薄膜 ,基片温度的变化范围从 2 5℃ (室温 )到 40 0℃。利用Raman谱、X射线光电子谱 (XPS)、X射线衍射(XRD)和原子力显微镜 (AFM)研究基片温度对DLC薄膜的化学结合状态、表面粗糙度、薄膜显微硬度和薄膜内应力的影响。根据XPS和Raman谱分析得出 ,基片温度低于 30 0℃时 ,sp3C杂化键的含量大约在 40 %左右 ;从 30 0℃开始发生sp3C向sp2 C的石墨化转变。随着沉积薄膜时基片温度的提高 ,DLC薄膜中sp3C的含量降低 ,由 2 5℃时 42 .5 %降到 40 0℃时 8.1 % ,XRD和AFM分析得出 ,随着基片温度的增加 ,DLC薄膜的表面粗糙度增大 ,薄膜的纳米显微硬度降低 ,摩擦系数提高 ,内应力降低。基片温度为 1 0 0℃时沉积的DLC薄膜的综合性能最好 ,纳米显微硬度 2 2GPa ,表面粗糙度为 0 75nm ,摩擦系数为 0 .1 1 0。     

SiCN薄膜的制备及其性能研究

利用射频溅射法在Si衬底上制备了SiCN薄膜，并利用X射线衍射（XRD）、红外吸收谱（FTIR）和X射线光电子谱（XPS）对薄膜的结构、成份及化学键合状态进行了分析。结果表明，室温制备的SiCN薄膜为非晶状态，并形成了Si-C、Si-N和C－N键；而在高温下（衬底温度为800℃），薄膜中含有SiCN的晶体成分。此外，还利用原子力显微镜（AFM）对薄膜的表面形貌进行了研究，并进一步研究了样品的场发射性能。在场强为24V／μm时，最大发射电流可达3.3mA/cm^2。     

C2H2流量对SiCN薄膜结构及阻挡性能的影响

采用C2H2和N2作为反应气体、多晶Si作为靶材,利用射频磁控溅射系统沉积了SiCN薄膜。利用傅里叶红外光谱仪、X射线衍射仪、四探针测试仪等研究了C2H2流量对薄膜结构、介电常数以及阻挡性能的影响。结果表明,薄膜为非晶结构,1000℃退火下未出现结晶,稳定性很好;随着C2H2流量的增大,薄膜表面颗粒呈现增大趋势;C原子取代Si原子占据薄膜中的网络位置,薄膜形成了以C-N键为主的网络结构;制得的SiCN薄膜介电常数在4.2~5.8之间,C,N含量以及薄膜结构是影响介电性能的关键因素,高温使得Cu穿过薄膜中的缺陷与Si发生互扩散是薄膜阻挡性能失效的主要原因。     

Si和C的存在形态对TiSiCN薄膜微观结构与性能的影响

为扩展Ti Al N和Ti CN薄膜的应用,以适应高速切削和绿色干式切削加工技术发展趋势和要求,采用工业化多弧离子镀在工业用钢H13表面制备Ti SiCN硬质薄膜,以改善H13钢的力学和摩擦学性能。借助扫描电子显微镜、X射线衍射仪、X射线光电子能谱仪、维氏显微硬度计、摩擦磨损仪研究了Si和C的存在形态及其对Ti SiCN薄膜的微观形貌、微观结构、硬度和摩擦磨损性能的影响。结果表明:Ti Si CN薄膜组织致密,具有纳米晶Ti(CN)与非晶相(SiC、Si3N4和C);薄膜中C原子固溶于Ti(CN)中,随着C含量的增加,Ti(CN)固溶度增加;部分C以非晶态的形式存在,起到阻碍Ti Si CN纳米晶粒生长作用; Si以非晶SiC和Si3N4相的形式存在,并包裹Ti CN纳米晶,抑制薄膜晶粒的长大;高Si含量Ti Si CN-No.2薄膜和高C含量Ti Si CN-No.3薄膜表现出高硬度和耐磨减摩特性。     

基片温度对脉冲激光沉积CNx薄膜的组织结构和摩擦学性能的影响

采用脉冲激光烧蚀氮化碳薄膜靶,在室温至450℃基片温度下制备了CNx薄膜.利用扫描电镜、X射线衍射仪、X射线光电子谱仪和拉曼光谱仪等对薄膜的形貌、结晶性和结合键状态进行了表征.采用球-盘式摩擦仪测试了薄膜在大气中(相对湿度60％～62％)的摩擦磨损性能.结果表明:所得CNx薄膜均呈非晶状态,表面形貌与基片温度无关.随着基片温度的升高,薄膜含氮量由原子分数25.3％下降至21.2％,膜中sp3C-C键的含量增加且在300℃时达到最高,N-sp3C键的含量下降且在150℃时最高;拉曼谱中ID/IG比值上升,G峰蓝移且半高宽下降,薄膜结构有序度升高-石墨化程度增加;薄膜的摩擦系数从0.23下降至0.13,磨损率从3.0× 10-15 m3N-1m-1上升至9.3×10-15 m3N-1m-1.     

低温生长硅基碳化硅薄膜研究

在 8 5 0℃的低温下 ,在Si( 10 0 )衬底上生长了 3C SiC薄膜 ,气源为SiH4和C2 H4混合气体。用X射线衍射、X射线光电子能谱和傅立叶红外吸收谱分析了薄膜的晶体结构、组分以及键能随深度的变化。研究表明薄膜为富硅的 3C SiC结晶层 ,其中的Si/C比约为 1 2。     

钙钛矿型氧化物SrTiO3/BaTiO3多层膜的激光分子束外延生长研究

用激光分子束外延技术在SrTiO3(001)衬底上外延生长SrTiO3/BaTiO3多层膜,通过反射式高能电子衍射(RHEED)原位实时监测并结合原子力显微镜(AFM),研究了不同基片温度下所生长薄膜的表面平整度,利用X射线衍射(XRD)对外延薄膜进行了结构分析,结果表明薄膜具有二维生长模式,在基片温度为380～470℃之间生长的薄膜具有原子级光滑,并且具有完全C轴取向.同时运用X射线光电子能谱(XPS)研究了薄膜界面的互扩散,结果表明降低制备薄膜时的基片温度有利于减少互扩散.     

SiCN扩散阻挡层薄膜的制备及特性研究

采用磁控溅射法在单晶硅衬底上制备了SiCN及Cu/SiCN薄膜,并对试样进行了退火处理.利用原子力显微镜(AFM)、X射线衍射(XRD)、四探针测试仪(FPP)研究了SiCN薄膜的表面形貌、物相结构及在Cu/SiCN/Si结构中SiCN薄膜对铜与硅的阻挡性能.结果表明,沉积态SiCN薄膜为无定型的非晶结构,晶化温度在1000℃以上;SiCN薄膜作为Cu的扩散阻挡层有较好的热稳定性及阻挡性,阻挡失效温度在600℃左右.     

脉冲电弧放电电离甲醇/氨水溶液合成结晶氮化碳薄膜

利用脉冲电弧放电在大气压下产生的高密度等离子体研究了结晶氮化碳薄膜的低温合成。直流脉冲电弧等离子体由甲醇／氨水溶液液滴通过高压电极时诱导放电产生。利用扫描电子显微镜、X射线衍射、Raman光谱分析了薄膜样品的形貌和结构。在基片温度为450℃时所制样品的X射线衍射分析表明薄膜中含有α-C3N4和β-C3N4两种结构晶体，Raman光谱给出了明显的特征峰，这些特征峰与氮化碳晶体的理论预言值符合较好。当基片温度提高到550℃时．Raman光谱分析表明，样品为炭膜。     

渗注锆酸盐对AZ31镁合金疲劳裂纹扩展速率的影响

研究交变载荷作用下,在AZ31镁合金疲劳裂纹尖端渗注锆酸盐的沉积行为及其对疲劳裂纹扩展速率的影响。用扫描电镜(SEM)、能谱仪(EDS)及X射线衍射仪(XRD)观察分析裂纹尖端的形貌和物相成分,采取贴应变片方法确定渗注锆酸盐前后应力强度因子的变化。结果表明:锆酸盐转化液能在AZ31镁合金疲劳裂纹尖端形成锆酸盐ZrxOyZnxOy覆层;渗注锆酸盐后裂纹尖端应力强度因子降低约40%,能有效增强疲劳裂纹闭合效应,降低或延滞其疲劳裂纹扩展速率。     

Deposition pressure and rate effects on the microstructure and magnetic properties of sputtered tape media

Sputtered magnetic tape media were prepared by DC magnetron sputtering on polyimide substrates at different deposition conditions. The structure, texture and magnetic properties of the sputtered films were systematically studied using transmission electron microscopy, X-ray diffraction and alternating gradient magnetometer. The microstructure of sputtered media is greatly influenced by the deposition conditions, such as deposition pressure and rate. High sputtering pressure and slow deposition rate produced high coercivity and low delta M films. The sputtered tape media have the desired grain segregation structure which is essential for low-noise media fabrication. X-ray diffraction analysis revealed that the stress of film is closely related to the deposition pressure. The stress of the film stack can be tuned for specific applications and good magnetic properties can be obtained under optimized deposition condition.     

Electrolytic and electrophoretic deposition of CeO2 films

Cerium oxide films of thickness 0.1–300 μm were deposited on Ni substrates via cathodic electrolytic and electrophoretic deposition. The films were studied by X-ray diffraction, thermogravimetric analysis and scanning electron microscopy. Experimental results obtained by both deposition methods are compared. The influence of deposition parameters and additives on deposition yields and film morphologies is studied and discussed.     

等离子体聚合工艺对聚合沉积速率的影响

利用等离子体聚合的方法对两种有机单体(正丙醇和丙烯醇)进行了等离子体聚合,成功地在Si基体上沉积了高分子薄膜.利用XPS研究了薄膜的结构和不同工艺对沉积速度的影响.研究表明,随着功率的增加或工作气压的增加,沉积速率增加;偏压的增加使等离子体聚合的沉积速率减小.研究还发现,丙烯醇含有双键结构,其沉积速率比正丙醇大.     

电泳沉积法制备纳米Al/Bi2O3铝热剂薄膜的研究

采用电泳沉积法在铜基底上成功沉积了纳米Al/Bi_2O_3铝热剂薄膜。运用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)和能谱仪(EDS)等对铝热剂薄膜的物相和形貌进行了测量与分析,并通过对比单位面积铜基底沉积前后的质量、差示扫描量热法(DSC)和激光点火试验分别探讨了沉积时间对铝热剂薄膜的质量、放热性能和燃烧性能的影响。结果表明:电泳沉积法制备的Al/Bi_2O_3铝热剂薄膜具有良好的薄膜形貌,且纳米颗粒分散均匀。沉积时间在10 min以内时,薄膜沉积速率稳定在0.785 mg/(cm~2·min)时,单位质量的薄膜放热量不变;沉积时间超过10 min后,薄膜沉积速率下降,改变了铝热剂的当量比,导致单位质量的薄膜放热量减少,薄膜燃烧的火焰强度下降;确定最佳的沉积时间为10 min。     

Electrochemical deposition of zinc selenide and cadmium selenide onto porous silicon from aqueous acidic solutions

An electrochemical deposition process of ZnSe and CdSe compound semiconductors from aqueous acidic solutions onto silicon substrates with porous silicon layers formed on their surfaces was studied by the voltammetry method. The experimental data obtained were compared with the deposition data onto metal and silicon substrates, and the optimal conditions for the binary compound deposition onto porous silicon were determined. Semiconductor films deposited were studied by scanning electron microscopy, X-ray diffractometry, and X-ray microanalysis. The films are shown to have the crystalline structure and a nearly stoichiometric composition with a minor Se excess. Further annealing in air for 15 min allowed the Se concentration to be decreased.     

Characterization of electroplated FeSe thin films

Thin films of iron selenide (FeSe) were electrodeposited on tin oxide coated conducting glass substrates at various bath temperatures, deposition potential and solution pH values. The deposited films were characterized by X-ray diffraction, energy dispersive X-ray analysis, scanning electron microscopy and optical absorption techniques, respectively. The structure was found to be hexagonal with preferential orientation along {002} plane. X-ray line profile analysis technique by the method of variance has been used to evaluate the microstructural parameters. The variation of microstructural parameters with bath temperature, deposition potential and solution pH values were studied. The observed results are discussed in detail.     

Response of radiation dosimeters based on in situ oxygen plasma post-treated CVD-diamond thin films to X-ray

Radiation dosimeters based on in situ oxygen plasma post-treated diamond thin films were fabricated in a simple sandwich configuration. Effects of deposition process, methane concentration, and in situ oxygen plasma post-treatment on the sensitivity of the devices to X-ray irradiation were investigated. X-ray response demonstrates that the cyclic deposition process could improve response sensitivity. The increase in methane concentration in the deposition gas mixture will worsen the irradiation response of the devices mainly resulted from the change of the orientation and purity of the films. X-ray photoelectron spectroscopy, photoluminescence, and Raman measurements suggest that in situ oxygen plasma post-treatment can effectively etch non-diamond phases and passivate the silicon-vacancy and nitrogen-vacancy defects of the diamond films, resulting in an increase in the sensitivity of the device by a factor of about 2. Time-dependent response to X-ray indicates that the extended period to achieve photocurrent signals stability for the devices is a limitation for promising applications in radiation dosimetry.     

Ag-MgF2金属陶瓷薄膜的制备及其微观结构研究

用真空双蒸发源交替蒸发法和单蒸发源混合瞬时蒸发法制备了Ag-MgF2金属陶瓷薄膜。透射电镜、电子衍射、X射线衍射以及X射线光电子能谱分析结果表明，薄膜由晶态超微粒Ag镶嵌于主要为非晶态的MgF2中构成。Ag-MgF2形成的金属陶瓷复合晶体结构所对应的主要谱峰为d=0．26102，0．23540，0．20393nm。用真空单蒸发源混合瞬时蒸发法制备的Ag-MgF2薄膜表面元素的结合能大于双蒸发源交替蒸发法制备的薄膜表面元素的结合能。     

Ti-B超硬薄膜的合成及其显微结构和显微硬度的研究

采用离子束增强沉积方法，在p型（100）单晶硅衬底上，通过不同能量的氙离子辅助轰击，以不同的沉积速率制备了Ti－B超硬薄膜。X射线衍射分析结果表明，Ti-B薄膜呈TiBx多晶结构，其晶化程度随蒸发速率的不同而变化，而其缺位值x随氙离子轰击能量的不同而变化。超显微硬度的测试结果表明，氙离子束能量为60keV，沉积速率为0．6nm／s时，可以获得性能最佳的Ti-B超硬薄膜，其本征硬度在测试负荷为5mN时达28．6GPa，超过了TiB体材料的硬度水平，是衬底硅片的3．2倍。利用SEM观察了Ti-B薄膜的横断面，并讨论了工艺参数对Ti－B超硬薄膜韧性的影响。