Optical demultiplexing at 6 Gb/s using a semiconductor laser amplifier as an optical gate

A semiconductor laser amplifier (SLA) has been employed successfully for optical demultiplexing in two-channel optical time division multiplexed system experiments at 6 and 2 Gb/s. Demultiplexing of 6-Gb/s (2-Gb/s) signals was demonstrated with a power penalty of 1.6 dB (3.0 dB) at bit error rates of 10/sup -9/. It is also shown that a reduction of the generated amplified spontaneous emission can be obtained by optical gating/demultiplexing for systems incorporating inline amplifiers. A 0.5-dB improvement in sensitivity was achieved as a result of using an SLA for demultiplexing from 2.0 to 1.0 Gb/s in a system with one inline Er/sup 3+/-doped fiber amplifier.<>     

A 256-element CMOS imaging receiver for free-space optical communication

This paper describes a CMOS imaging receiver for free-space optical (FSO) communication. The die contains 256 optical receive channels with -47 dBm optical sensitivity and 30 dB optical dynamic range at 500 kb/s/channel while consuming 67 mW. Received signals are amplified by digitally self-calibrated open-loop amplifiers and digitized before clock and data recovery. The sampled data also provide inputs for digital automatic gain and offset control loops closed around the analog amplifier chain to compensate for signal variations due to atmospheric turbulence and daylight interference. Gain control logic can adapt to incident signals over the 30 dB dynamic range within 28 bit periods. Low-power logic design and analog circuit techniques are used to minimize digital crosstalk to single-ended photodetectors referenced to a bulk substrate. Local arbitration circuitry at each channel forms an intrachip data passing network to multiplex received data words from the 16 /spl times/ 16 array onto a common off-chip bus. The 1.6 M transistor mixed-signal die fabricated in a 0.25 /spl mu/m CMOS process measures 6.5/spl times/6.5 mm/sup 2/. Reception at 500 kb/s through a 1.5 km atmospheric channel is demonstrated with 3 mW optical transmit power during nighttime and daylight hours.     

Hybrid WDM/TDM-PON with wavelength-selection-free transmitters

A hybrid wavelength-division-multiplexed/time-division-multiplexed passive optical network serving 128 subscribers with wavelength-selection-free transmitters is presented by cascading 1/spl times/16 arrayed-waveguide gratings (AWGs) and 1/spl times/8 splitters. The wavelength-selection-free transmitter is an uncooled Fabry-Pe/spl acute/rot laser diode (FP-LD) wavelength-locked to an externally injected narrow-band amplified spontaneous emission (ASE). Bit-error rates better than 10/sup -9/ over temperature ranging from 0 to 60/spl deg/C are achieved in all 16 wavelength channels using a single FP-LD with an ASE injection of about -15 and -2 dBm in 622-Mb/s upstream and 1.25-Gb/s downstream transmissions over a 10-km feeder fiber, respectively. It is also reported that the ASE injection does not exert penalty upon burst-mode operations of the FP-LDs in the upstream.     

Optical gain and absorption of quantum dots measured using an alternative segmented contact method

An alternative segmented-contact method for accurate measurement of the optical gain and absorption of quantum-dot and quantum-dash active materials with small optical gain is reported. The usual error from unguided spontaneous emission is reduced by subtracting signals acquired from three independently controlled sections as opposed to just two found in the conventional technique. The quantum-dot gain spectra are measured to a precision of less than 0.2 cm/sup -1/ at nominal gain values below 2 cm/sup -1/, and gain spectrum of quantum-dash sample is calculated with an error less than 0.3 cm/sup -1/ at a gain less than 1 cm/sup -1/. These accuracies are checked with a self-calibrating method. The internal optical mode loss measurement is also described.     

Self-phase modulation coefficient of multiple-quantum-well optical amplifiers

The self-phase modulation coefficient /spl gamma/ of 1310 nm multiple-quantum-well (MQW) semiconductor optical amplifiers has been investigated. It is found to vary from 16/spl times/10/sup 4/ W/sup -1/ m/sup -1/ for low driving conditions to 3/spl times/10/sup 4/ W/sup -1/ m/sup -1/ for high-driving conditions. This implies that the amount of self-phase modulation occurring in the amplifier is between 1.5-10/spl times/ more than that occurring in the optical fiber following the amplifier. The additional self-phase modulation caused by the semiconductor optical amplifier may be used to achieve compensation for fiber dispersion in optical communication systems at significantly lower average power levels. The linewidth enhancement factor /spl alpha//sub H/ was found to increase from a value of 2 at low driving conditions, in agreement with results reported for MQW lasers, to a value of 3 at high-driving conditions.     

Full characterization of packaged Er-Yb-codoped phosphate glass waveguides

We present a procedure for the characterization of packaged Er-Yb-codoped phosphate glass waveguides. The procedure is based on precise measurements of the output optical powers when the waveguide is diode-laser pumped at 980 nm. The dependence of these optical powers on the input pump power is then fitted to the results from a numerical model that describes in detail the propagation of the optical powers inside the waveguide. The best fit is obtained for the following parameters: the signal wavelength scattering losses are /spl alpha/(1534)=8.3/spl times/10/sup -2/ dB/cm, the Yb/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 5.4/spl times/10/sup -25/ m/sup 2/ and 7.0/spl times/10/sup -25/ m/sup 2/, the Er/sup 3+/ absorption and emission cross sections (/spl ap/980 nm) are 1.6/spl times/10/sup -25/ m/sup 2/ and 1.2/spl times/10/sup -25/ m/sup 2/, the Yb/sup 3+/--Er/sup 3+/ energy-transfer coefficient is 1.8/spl times/10/sup -23/ m/sup 3//s and the cooperative-upconversion coefficient is 8/spl times/10/sup -25/ m/sup 3//s. An approximate method is introduced that allows the determination of the absorption and emission cross section distributions for the erbium /sup 4/I/sub 13/2//spl hArr//sup 4/I/sub 15/2/ transition from the amplified spontaneous emission power spectrum.     

Maximum-likelihood optimal-sampling-phase estimation for ultra-high-sensitivity optically preamplified duobinary receivers

This paper describes the demonstration of a novel method for detecting optical duobinary signals. Oversampling in combination with maximum-likelihood estimation-based data processing of the optical-to-electronic converted signal results in a record sensitivity for an optically preamplified receiver. The concept is investigated at 10 Gb/s and allows data recovery at bit-error rates of 1/spl times/10/sup -9/ and 1/spl times/10/sup -3/ with a receiver sensitivity of better than -39.5 dBm and an optical signal-to-noise ratio (OSNR) of only 7.8 dB, respectively.     

16 Gbit/s all-optical demultiplexing using four-wave mixing

A novel, purely optical technique for demultiplexing high-speed time-division multiplexed data is proposed and demonstrated. The technique uses optical fibre nonlinearity induced four-wave mixing with a data signal and a probe signal located at different wavelengths. Using only semiconductor laser light sources, 1:4 demultiplexing of 20 ps long, subpicojoule, 2/sup 15/-1 RZ pulses at a data rate of 16 Gbit/s with less than 1 dB penalty is demonstrated.<>     

Light amplification and lasing in a stilbenoid compound-doped glass-clad polymer optical fiber

We report on a large optical gain, over the wide spectral range, and lasing in a glass-clad polymer optical fiber that uses a novel highly fluorescent stilbenoid compound. The compound 1,4-bis(4-diphenylamino-styryl)-benzene is designed for the blue region of the spectrum and has a high quantum yield of 0.85 in polystyrene and a relatively large Stokes shift of /spl sim/50 nm. A fiber doped with 0.2-wt.% of the compound is photoexcited with a thin striped-shape area at 355 nm with nanosecond optical pulses, and the emission from one end is monitored as a function of the excitation length to deduce the net gain coefficient. The gain spectroscopy has revealed a broad optical gain exceeding 25 cm/sup -1/ and up to 36 cm/sup -1/ at 494 nm that covers a wide spectral range of about 70 nm when the fiber is transversely photoexcited at 12 mJ/cm/sup 2/ at room temperature. An analysis shows that the saturation effect expected for homogeneously broadened gain accounts for the amplified spontaneous emission output behavior at longer excitation lengths. Waveguide loss is measured to be 0.7 cm/sup -1/ at 494 nm. The large gain and low loss have been utilized to demonstrate blue laser emission at 489 nm from the fiber (which is only 1.4 cm in length) in a low finesse cavity defined by the Fresnel reflections at the fiber-air interfaces. The threshold for lasing is found to be 1.7 mJ/cm/sup 2/.     

Three-stage burst-mode transimpedance amplifier in deep-sub-/spl mu/m CMOS technology

A transimpedance amplifier, designed in a digital 120-nm CMOS technology, used as preamplifier for optical burst-mode receivers in passive optical networks is presented. A wide optical input power range of 27 dB can be handled with a variable transimpedance without stability problems by varying the open-loop gain by a factor of 115. Noise and stability analysis of the optical receiver are presented. Sensitivities of - 31.3 dBm at 622 Mb/s and - 28.6 dBm at 1.25 Gb/s with a bit error ratio of 10/sup -10/ and a pseudorandom bit stream of 2/sup 31/-1 are achieved with a power consumption of 88.5 mW.     

Simple and highly sensitive method for wavelength measurement of low-power time-multiplexed signals using optical amplifiers

We describe a simple method for the wavelength measurement of optical signals that is easily capable of measuring a 1-nW average power optical signal with a wavelength resolution of 0.1 pm/Hz/sup 1/2/ while maintaining a large measurement range in excess of 12 nm. The system uses an erbium-doped fiber amplifier to increase the signal level before being measured with a wide-band edge filter. This technique is well suited to the measurement of low duty cycle time-multiplexed signals such as those in multiplexed fiber sensor systems. We show that the measurement of the amplified signal is improved despite the broadband nature of the amplified spontaneous emission noise. We show for the first time that the addition of an amplifier can increase the detection capabilities of the edge filter method beyond the shot noise limit of an unamplified measurement.     

A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog front-end

A fully integrated 10-Gb/s optical receiver analog front-end (AFE) design that includes a transimpedance amplifier (TIA) and a limiting amplifier (LA) is demonstrated to require less chip area and is suitable for both low-cost and low-voltage applications. The AFE is fabricated using a 0.18-/spl mu/m CMOS technology. The tiny photo current received by the receiver AFE is amplified to a differential voltage swing of 400 mV/sub (pp)/. In order to avoid off-chip noise interference, the TIA and LA are dc-coupled on the chip instead of ac-coupled though a large external capacitor. The receiver front-end provides a conversion gain of up to 87 dB/spl Omega/ and -3dB bandwidth of 7.6 GHz. The measured sensitivity of the optical receiver is -12dBm at a bit-error rate of 10/sup -12/ with a 2/sup 31/-1 pseudorandom test pattern. Three-dimensional symmetric transformers are utilized in the AFE design for bandwidth enhancement. Operating under a 1.8-V supply, the power dissipation is 210 mW, and the chip size is 1028 /spl mu/m/spl times/1796 /spl mu/m.     

Wavelength conversion up to 18 nm at 10 Gb/s by four-wave mixing in a semiconductor optical amplifier

We characterize the conversion bandwidth of a four-wave mixing semiconductor optical amplifier wavelength converter. Conversion of 10-Gb/s signals with bit-error-rate (BER) performance of <10/sup -9/ is demonstrated for wavelength down-shifts of up to 18 nm and upshifts of up to 10 nm.     

Carrier synchronization for 3- and 4-bit-per-symbol optical transmission

We investigate carrier synchronization for coherent detection of optical signals encoding 3 and 4 bits/symbol. We consider the effects of laser phase noise and of additive white Gaussian noise (AWGN), which can arise from local oscillator (LO) shot noise or LO-spontaneous beat noise. We identify 8- and 16-ary quadrature amplitude modulation (QAM) schemes that perform well when the receiver phase-locked loop (PLL) tracks the instantaneous signal phase with moderate phase error. We propose implementations of 8- and 16-QAM transmitters using Mach-Zehnder (MZ) modulators. We outline a numerical method for computing the bit error rate (BER) of 8- and 16-QAM in the presence of AWGN and phase error. It is found that these schemes can tolerate phase-error standard deviations of 2.48/spl deg/ and 1.24/spl deg/, respectively, for a power penalty of 0.5 dB at a BER of 10/sup -9/. We propose a suitable PLL design and analyze its performance, taking account of laser phase noise, AWGN, and propagation delay within the PLL. Our analysis shows that the phase error depends on the constellation penalty, which is the mean power of constellation symbols times the mean inverse power. We establish a procedure for finding the optimal PLL natural frequency, and determine tolerable laser linewidths and PLL propagation delays. For zero propagation delay, 8- and 16-QAM can tolerate linewidth-to-bit-rate ratios of 1.8/spl times/10/sup -5/ and 1.4/spl times/10/sup -6/, respectively, assuming a total penalty of 1.0 dB.     

120-Gb/s VCSEL-based parallel-optical interconnect and custom 120-Gb/s testing station

A 120-Gb/s optical link (12 channels at 10 Gb/s/ch for both a transmitter and a receiver) has been demonstrated. The link operated at a bit-error rate of less than 10/sup -12/ with all channels operating and with a total fiber length of 316 m, which comprises 300 m of next-generation (OM-3) multimode fiber (MMF) plus 16 m of standard-grade MMF. This is the first time that a parallel link with this bandwidth at this per-channel rate has ever been demonstrated. For the transmitter, an SiGe laser driver was combined with a GaAs vertical-cavity surface-emitting laser (VCSEL) array. For the receiver, the signal from a GaAs photodiode array was amplified by a 12-channel SiGe receiver integrated circuit. Key to the demonstration were several custom testing tools, most notably a 12-channel pattern generator. The package is very similar to the commercial parallel modules that are available today, but the per-channel bit rate is three times higher than that for the commercial modules. The new modules demonstrate the possibility of extending the parallel-optical module technology that is available today into a distance-bandwidth product regime that is unattainable for copper cables.     

10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

The SONET OC-192 receiving performance of In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode grown on linearly graded metamorphic In/sub x/Ga/sub 1-x/P buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10/sup -9/ at 10 Gb/s, a sensitivity of -17.8 dBm, and a noise equivalent power of 3.4/spl times/10/sup -15/ W/Hz/sup 1/2/ owing to its ultralow dark current of 3.6/spl times/10/sup -7/ A/cm/sup 2/. Eye diagram analysis at 10 Gb/s without transimpedance amplification reveals a statistically distributed Q-factor of 8.21, corresponding to a minimum BER of 1.1/spl times/10/sup -16/ at receiving power of -6 dBm.     

Design and fabrication of zinc oxide thin-film ridge waveguides on silicon substrate with ultraviolet amplified spontaneous emission

Zinc oxide (ZnO) thin-film ridge waveguides have been designed and fabricated on n-type (100) silicon substrate. A filtered cathodic vacuum arc technique is used to deposit high-crystal-quality ZnO thin films on lattice-mismatched silicon substrates at 230/spl deg/C. A ridge waveguide of width /spl sim/2 /spl mu/m and height /spl sim/0.1 /spl mu/m is defined on the ZnO thin film by plasma etching. Room-temperature amplified spontaneous emission is observed with peak wavelength at /spl sim/385 nm under 355-nm optical excitation. It is found that the net optical gain of the ZnO thin-film ridge waveguides can be as large as 120 cm/sup -1/ at a pump intensity of /spl sim/1.9 MW/cm/sup 2/.     

16 W continuous-wave output power from 100 /spl mu/m-aperture laser with quantum well asymmetric heterostructure

16 W continuous-wave room temperature front facet output optical power and 74% wallplug efficiency were attained in 100 /spl mu/m-aperture 1.06 /spl mu/m-emitting laser diodes with 2-3 mm cavity length. The lasers are based on AlGaAs/GaAs/InGaAs quantum well asymmetric heterostructures with 1.7 /spl mu/m-thick waveguide having 0.34 cm/sup -1/ internal optical loss.     

Amplification of femtosecond pulses in Er/sup 3+/-doped single-mode optical fibres

Femtosecond pulse amplification in Er/sup 3+/-doped single-mode optical fibres has been experimentally investigated. The effect of amplified pulse compression from 80 to 55 fs has been observed. The amplified pulse energy was evaluated as 5 nJ. Maximum gain for the amplified signal was 26 dB.<>     

Gigabit/s Optical Receiver Sensitivity and Zero-Dispersion Single-Mode Fiber Transmission at 1.55 µm

High-speed pulse response and receiver sensitivity at 1.55 µm were measured at data rates ranging from 400 Mbits/s to 2 Gbits/s, in order to elucidate characteristics of a reach-through p/sup +/nn/sup -/ Ge APD. The p/sup +/nn/sup -/ Ge APD receiver provided a 2 Gbit/s received optical power level of -32.0 dBm at 1.55 µm and a 10/sup -9/ error rate, which was 4 dB better than the receiving level with a p/sup +/n Ge APD. Detector performance at 1.3 µm was also studied for comparison with performance at 1.55 um. Single-mode fibers, which have 0.54 dB/km loss and zero dispersion at 1.55 µm, and an optical transmitter-receiver, whose repeater gain is 29.2 dB, have enabled 51.5 km fiber transmission at 2 Gbits/s. The transmission system used in this study has a data rate repeater-spacing product of 103 (Gbits/s) /spl dot/ km at 1.55 µm. Optical pulse broadening and fiber dispersion were also studied, using 1.55 and 1.3 µm dispersion free fibers. Future repeater spacing prospects for PCM-IM single-mode fiber transmission systems are discussed based on these experimental results.