Nickel Oxide/Carbon Nanotubes Nanocomposite for Electrochemical Capacitance

A nanocomposite of nickel oxide/carbon nanotubes was prepared through a simple chemical precipitation followed by thermal annealing. The electrochemical capacitance of this electrode material was studied. When the mass fraction of CNTs (carbon nanotubes) in NiO/CNT composites increases, the electrical resistivity of nanocomposites decreases and becomes similar to that of pure CNTs when it reaches 30%. The specific surface area of composites increases with increasing CNT mass fraction and the specific capacitance reaches 160 F/g under 10 mA/g discharge current density at CNT mass fraction of 10%.     

Nanocomposite por-Si/SnOx layers formation for gas microsensors

Hetero-phase nanocomposite layers based on porous silicon and nonstoichiometric tin oxide (por-Si/SnO_x) were obtained by the chemical vapor deposition (CVD), magnetron sputtering, and molecular layer deposition methods. The structure, and the atomic and phase compositions of the nanocomposites were studied by means of transmission electron microscopy, energy-dispersive X-ray analysis (EDX), scanning electron microscopy, Raman spectroscopy, Auger spectroscopy, and X-ray photoelectron spectroscopy. The obtained data were indicative of the formation of por-Si/SnO_x nanocomposite layers up to 2 μm thick with x = 1.0-2.0. According to EDX data, in magnetron sputtering process the formation of por-Si/SnO_x nanocomposite layers proceeds on the externally exposed surface of polycrystalline por-Si skeleton elements with subsequent diffusion of tin atoms into the pores along the por-Si walls. The other two methods lead to formation of large SnO_x islands covering pores in the por-Si structure. Enhanced diffusion of tin atoms into porous matrix with D_eff ≈ 1 × 10⁻¹⁴ cm²/s was observed in samples annealed at 500 °C. Sensor heterostructures based on magnetron sputtered por-Si/SnO_x nanocomposite layers show high sensitivity to NO₂ environmental molecules and remarkable stability, thus offering promise in gas sensing applications.     

Thin polyaniline and polyaniline/carbon nanocomposite films for gas sensing

We have studied the gas sensing properties of five polyaniline-based materials—thick and thin PANI films, nanocomposite PANI/MWNT and PANI/SWNT films, and PANI nanogranules embedded in a polyvinylpyrrolidone matrix. The films (except for the latter) were deposited within the induction period of the polymerization process on gold interdigitated micro electrodes. Their sensitivity to NH₃, H₂, ethanol, methanol, and acetone was measured. The thin PANI film (~ 100 nm thick) prepared by a lift-off process had the sensitivity to ammonia below 0.5 ppm, which was higher than that of nanocomposite films. Two materials—thick PANI film and nanocomposite PANI/MWNT film—exhibited a shallow minimum in the temperature dependence of resistance (at 313 K and 319 K), which is a feature exploitable in practical applications, since the gas sensors should be insensitive to small temperature fluctuations at these temperatures.     

MWCNTs/多孔ZnO纳米材料的制备及室温NO气敏性研究

为开发室温气敏传感器材料,以Zn(NO3)2.6H2O为锌源、尿素为沉淀剂,在制备水合碱式碳酸锌(Zn4CO3(OH)6.H2O)的过程中加入羧基化的MWCNTs(MWCNT-COOH),焙烧制备了MWCNTs/ZnO复合材料.采用XRD,SEM和TEM等对其进行了分析.结果表明:复合材料中MWCNTs分散均匀,ZnO呈多孔纳米片状,纳米片由多个尺寸在10～20 nm的ZnO颗粒组成;在室温、空气湿度为50%的氛围中测试复合材料对NO的气敏响应发现,复合材料对体积浓度1×10-4的NO气敏响应灵敏度大约是MWCNT-COOH的3倍,明显高于MWCNT-COOH;对比加入不同量MWCNT-COOH制备的3种复合材料对NO的气敏性可知,加入200 mg MWCNT-COOH所制备的复合材料对低浓度(体积浓度≤50×10-6)的NO气体表现出较高的灵敏度.     

Gas sensors based on doped-CNT/SnO2 composites for NO2 detection at room temperature

For the first time nitrogen or boron doped carbon nanotubes were added into a SnO₂ matrix to develop a new hybrid CNTs/SnO₂ gas sensors. The hybrid sensor is utilised to detect low ppb concentrations of NO₂ in air, by measuring resistance changes of thin CNTs/SnO₂ films. The tests are performed at room temperature. For comparison, pure SnO₂ and N or B-substituted CNT sensors are also examined. Comparative gas sensing results reveal that the CNTs/SnO₂ hybrid sensors exhibit much higher response towards NO₂, at least by a factor of 10, and good baseline recovery properties at room temperature than the blank SnO₂ and the N or B-substituted CNT sensors. This finding shows that doping SnO₂ with low quantity of CNTs doped with heteroatoms can dramatically improve sensitivity.     

多壁碳纳米管/氧化石墨烯/硅橡胶复合薄膜湿敏性能研究

采用化学修饰的多壁碳纳米管(o-MWCNTs)与Hummers法制备的氧化石墨烯(GO)超声混合,加入室温硫化硅橡胶(RTV),利用溶液共混法制备具有湿敏特性的o-MWCNTs/GO/RTV复合薄膜。借助于透射电子显微镜(TEM)、红外吸收光谱(FT-IR)等分析手段分别对化学修饰的多壁碳纳米管及氧化石墨烯进行表征,并对基于o-MWCNTs/GO/RTV的复合薄膜的湿敏性能及湿敏机理进行了探讨。结果表明,混酸处理后的碳纳米管端口打开,侧壁和开端处产生羧基和羟基等官能团,有利于水分子的吸附,同时也有利于与GO表面的基团作用,形成三维的纳微米结构,提高了碳纳米管与硅橡胶基体的相容性,使所制备的o-MWCNTs/GO/RTV复合薄膜灵敏度提高。当相对湿度在23%~87%的范围,m(GO)∶m(o-MWCNTs)=1∶3时,o-MWCNTs/GO/RTV复合薄膜的湿滞为5%RH,灵敏度为0.3152/%RH,响应时间和恢复时间分别为4和27 s。     

Realization of ultrathin silver layers in highly conductive and transparent zinc tin oxide/silver/zinc tin oxide multilayer electrodes deposited at room temperature for transparent organic devices

We report on transparent and highly conductive multilayer electrodes prepared at room temperature by RF sputtering of zinc tin oxide (ZTO) and thermal evaporation of ultrathin silver (Ag) as top contact for transparent organic light emitting diodes (TOLED). Specifically, we study the morphological, electrical and optical properties of the multilayer structure in particular of the thin Ag film. The tendency of Ag to form agglomerates over time on top of ZTO is shown by atomic force microscopy. From the optical constants derived from ellipsometric measurements we evidenced a bulk like behavior of an Ag film with a thickness of 8 nm embedded in ZTO leading to a low sheet resistance of 9 Ω/sq. Furthermore we verify the optical constants by simulation of an optimized ZTO/Ag/ZTO structure. As an application we present a highly efficient TOLED providing a device transmittance of > 82% in the visible part of the spectrum. The TOLED shows no damage caused by sputtering on a lighting area of 80 mm² and exhibits efficiencies of 43 cd/A and 36 lm/W.     

Influence of crystallinity on CO gas sensing for TiO2 films

In the present research, carbon monoxide (CO) gas sensing response was studied for TiO₂ thick films calcined and sintered between 700 and 900 °C. Crystalline phase, crystallite size, surface area, particle size, and amorphous content were measured for the calcined powder. Crystallinity of the powder was found to affect sensing response significantly towards CO. Anatase phase of TiO₂ thick film was stable up to 900 °C however, as calcination temperature increased from 700 to 900 °C, surface area and amorphous phase content decreased. Films calcined and sintered at 700 °C showed a lower response towards CO than those calcined at 800 °C. Upon increasing the calcination temperature further, particle growth and reduced surface area hindered the sensing response. A calcination temperature of 800 °C was necessary to achieve sufficient order in the crystal structure leading to more efficient adsorption and desorption of oxygen ions on the surface of TiO₂.     

Effects of hydrogen in working gas for sputter-deposition on surface morphology and microstructure of indium tin oxide thin films grown at room temperature

Surface morphology and microstructure of indium tin oxide (ITO) thin films sputter deposited without heat treatment were obviously different from each other depending on the hydrogen concentration [H] in the working gas. The film surface became smoother with increasing [H] to 1%, but nucleation and growth of grains were apparent above [H] = 1.5%. The width of columnar grains in the ≤200 nm-thick films narrowed from ≈100 nm to ≈50 nm with increasing [H] from 0% to 1.5%. Randomly oriented and agglomerated grains were observed for the film deposited with [H] = 3.6%. Hydrogen added to the working gas induced reduction of the grain size, and then resulted in lowering of the carrier mobility.     

Investigations of thin film structures of WO3 and WO3 with Pd for hydrogen detection in a surface acoustic wave sensor system

A single thin film sensor structure of WO₃ (∼ 50 nm) and bilayer sensor structure of WO₃ (∼ 50 nm) with a very thin film of palladium (Pd ∼ 18 nm) on the top, have been studied for hydrogen gas-sensing application at ∼ 30 °C and ∼ 50 °C. The structures were obtained by vacuum deposition (first the WO₃ and than the Pd film) onto a LiNbO₃ Y-cut Z-propagating substrate making use of the surface acoustic wave method and additionally (in this same technological processes) onto a glass substrate with a planar microelectrode array for simultaneously monitoring of the planar resistance of the structure. In the case of a bilayer structure a very good correlation has been observed between these two methods — frequency changes in SAW method correlate very well with decreases of the bilayer structure resistance. These frequency changes are on the level of 2.4 kHz to 4% of hydrogen concentration in dry air, whereas in the case of a single WO₃ structure almost no frequency shift is observed.     

Influence of oxygen/argon pressure ratio on the morphology, optical and electrical properties of ITO thin films deposited at room temperature

Transparent conductive oxides (TCOs) such as indium tin oxide (ITO) thin films onto glass substrates are widely used as transparent and conductive electrodes for a variety of technological applications including flat panel displays, solar cells, smart windows, touch screens, etc.ITO films on glass and polycarbonate (PC) substrates were prepared at room temperature (RT) and at different PO₂. The films were characterized in terms of the surface roughness (δ), sheet resistance, the refractive index (n) and extinction coefficient (k). The free carrier density (n_c) and the carrier mobility (μ) of the ITO (In₂O₃:Sn) films were measured and studied. The n_c and μ values vary in different ratio of oxygen partial pressure (PO₂) of ITO deposition. The observed changes in the ITO film resistivity are due to the combined effect of different parameter values for n_c and μ. From AFM analysis and spectra calculations, the surface roughness values of the ITO films were studied and it was observed that the δ values were lower than 15 nm. The energy band gap E_g ranges from 3.26 eV to 3.66 eV as determined from the absorption spectrum. It was observed an increase on the energy band gap as the PO₂ decrease in the range of 20-2% PO₂. The Lorentz oscillator classical model has also been used to fit the ellipsometric spectra in order to obtain both refractive index n and extinction coefficient κ values.     

Influence of effective surface area on gas sensing properties of WO3 sputtered thin films

WO₃ thin films having different effective surface areas were deposited under various discharge gas pressures at room temperature by using reactive magnetron sputtering. The microstructure of WO₃ thin films was investigated by X-ray diffraction, scanning electron microscopy, and by the measurement of physical adsorption isotherms. The effective surface area and pore volume of WO₃ thin films increase with increasing discharge gas pressure from 0.4 to 12 Pa. Gas sensors based on WO₃ thin films show reversible response to NO₂ gas and H₂ gas at an operating temperature of 50-300 °C. The peak sensitivity is found at 200 °C for NO₂ gas and the peak sensitivity appears at 300 °C for H₂ gas. For both kinds of detected gases, the sensor sensitivity increases linearly with an increase of effective surface area of WO₃ thin films. The results demonstrate the importance of achieving high effective surface area on improving the gas sensing performance.     

Deposition of ZnO thin films on SiO2/Si substrate with Al2O3 buffer layer by radio frequency magnetron sputtering for high frequency surface acoustic wave devices

ZnO films with c-axis (0002) orientation have been grown on SiO₂/Si substrates with an Al₂O₃ buffer layer by radio frequency magnetron sputtering. Crystalline structures of the films were investigated by X-ray diffraction, atomic force microscopy and scanning electron microscopy. The center frequency of the surface acoustic wave (SAW) device with a 4.8 μm thick Al₂O₃ buffer layer was measured to be about 408 MHz, which was much higher than that (265 MHz) of ZnO/SiO₂/Si structure and approaches that (435 MHz) of ZnO/sapphire. It is a possible way as an alternative for the sapphire substrate for the high frequency SAW device applications, and is also useful to integrate the semiconductor and high frequency SAW devices on the same Si substrate.