石墨靶电流对类石墨镀层摩擦性能的影响

用非平衡磁控溅射离子镀技术制备含铬类石墨镀层,研究了石墨靶电流对磁控溅射法制备类石墨镀层摩擦性能的影响.通过扫描电镜、原子力显微镜、透射电镜等分析了镀层的表面形貌与组织.结果表明:所制备镀层的硬度随着石墨靶电流的升高而增加;镀层的摩擦系数和比磨损率随靶电流的增大呈现先降后升的趋势;扫描电镜和原子力显微镜图片分析表明镀层表面呈典型的岛团状聚集态,且随着石墨靶电流增大,镀层表面岛团状尺寸变大、镀层表面粗糙度随之增大.用高分辨透射电镜分析显示:靶电流较小时碳层中出现Cr元素富集区,随着石墨靶电流的增大,表面层中的Cr弥散分布.     

直流磁过滤电弧源沉积氧化铝薄膜的研究

采用直流磁过滤电弧源技术,在K9玻璃基底上制备氧化铝薄膜,研究了沉积时的氧气分量和阴极靶电流对薄膜折射率、沉积速率、消光系数和表面粗糙度的影响。结果表明:薄膜折射率、沉积速率和消光系数均随着氧气分量的增加而降低,随着阴极靶电流的升高而增加;薄膜表面粗糙度则随氧气分量或阴极靶电流的增加,呈先减小、后增大的趋势。分析认为,主要是因为随着氧气分量和阴极靶电流的变化,基底表面铝原子和氧气的比例发生了改变,进而影响到薄膜的相关性能。     

复合高功率脉冲磁控溅射Ti的放电特性及薄膜制备

采用高功率脉冲磁控溅射与直流磁控溅射并联的复合高功率脉冲磁控溅射技术,研究直流磁控溅射部分耦合直流电流变化对Ti靶在Ar气氛中放电及等离子体特性的影响.采用表面轮廓仪、扫描探针显微镜、X射线衍射与纳米压痕仪对Ti薄膜厚度、结构特征以及力学性能进行表征.结果表明:耦合直流电流增加,靶平均功率增加,脉冲作用期间靶电流降低,等离子体电子密度增加;在耦合直流电流为2.0A时,等离子体电子密度和电子温度获得较大值,分别为2.98 V和0.93 eV;耦合直流电流增加,Ti薄膜沉积速率近似线性增加,粗糙度增加,硬度和弹性模量略有降低;相同靶平均功率时,采用复合高功率脉冲磁控溅射技术制备Ti薄膜与采用传统直流磁控溅射技术相比,沉积速率相当;靶平均功率650W时复合高功率脉冲磁控溅射所制Ti薄膜比传统直流磁控溅射所制Ti薄膜更加光滑,平均粗糙度降低1.32 nm,力学性能更加优异,硬度提高2.68GPa.     

磁控溅射沉积参数对硼碳氮薄膜沉积速率的影响

利用直流磁控溅射技术制备了三元硼碳氮(B-C-N)薄膜,通过改变靶功率、基体偏压、沉积温度和励磁线圈电流,在相同沉积时间内得到不同厚度的薄膜.采用纳米压入仪分析了沉积参数改变对B-C-N薄膜沉积速率的影响规律.结果表明,在低靶功率和高励磁电流的条件下沉积的薄膜,随着靶功率和励磁电流的增加薄膜沉积速率呈线性增长;薄膜的沉积速率随基体偏压的增加呈抛物线状下降;薄膜的沉积速率受基体是否升温影响很大,而受基体所加温度大小影响较小.     

直流磁控溅射制备二氧化硅薄膜及其性能

采用直流反应磁控溅射法在单晶硅上制备二氧化硅薄膜.利用X射线衍射仪(XRD)、原子力显微镜(AFM)以及傅里叶交换红外光谱仪(FTIR)等研究制备过程中氧含量和溅射功率对薄膜的微结构、表面形貌以及红外吸收等性能的影响.结果表明,室温下溅射出的SiO2薄膜是非晶结构的;随着氧含量的增加,折射率、沉积速率、粗糙度都逐渐减小;沉积速率和粗糙度随着溅射功率的增加而增加;当氧气含量为40％时,薄膜的折射率接近二氧化硅的折射率(1.46).退火后薄膜的压电常数随氧含量的增加先增大再减小,介电常数随着频率的增大而减小.     

Nd-Fe-B薄膜的磁控溅射法制备与组织结构

对直流磁控溅射法制备Nd-Fe-B薄膜工艺进行了研究.在不同的溅射功率、溅射气压、溅射时间等条件下制备薄膜,并对薄膜进行了AFM、XRD分析.结果表明,Nd-Fe-B薄膜的沉积速率、表面形貌及相结构与溅射功率、溅射气压、溅射时间密切相关.薄膜的沉积速率随磁控溅射功率的增加而增加,薄膜表面晶粒尺寸和表面粗糙度随溅射功率增加而增大.沉积速率随溅射气压的升高先增大后减小.低功率溅射时,薄膜中出现α-Fe、Nd2Fe14B相相对较少,随溅射功率增加,α-Fe相消失,Nd2Fe14B相增多.综合考虑各种因素,最佳溅射功率为100～130 W.     

多组分缓冲层W梯度掺杂DLC复合薄膜研究

用离子束辅助非平衡中频磁控溅射技术, 在Si, 高速钢或不锈钢基体上分别沉积得到了具有多组分过渡金属层缓冲的W梯度掺杂类金刚石碳(DLC)膜, 研究了W靶电流对DLC膜组成、结构和性能的影响. 实验表明, 随着W靶电流增大, 薄膜中W掺杂量增加, W的碳化物含量增加, sp³结构含量减少; 薄膜的纳米硬度和弹性模量逐渐增大, 且材料抗塑性参数H/E随之增大; 随W靶电流增大, 材料与基体结合力增强, 划痕实验临界载荷在80-100 N之间, 材料摩擦系数增大; 但磨损率因W掺杂而明显减小, 且随W靶电流增大而减小. 样品表面元素分布均匀, 粗糙度(R_a)较小, R_a值在7.56-15.8 nm之间.     

氧氩流量比对溅射氧化钒薄膜结构和光学性能的影响

采用射频反应磁控溅射方法制备氧化钒(VOx)薄膜,对样品的沉积速率、物相结构、表面形貌和可见光波段的透过率进行表征,研究了在沉积气压一定的情况下,氧氩流量比对氧化钒薄膜结构和光学性能的影响。结果表明,改变氧氩流量比可明显改变薄膜结构,随着氧气比例的增加,沉积速率下降,薄膜表面出现了颗粒结构,颗粒尺寸具有增大的趋势,光透过率增大。     

基于硅靶和碳化硅靶的碳化硅薄膜磁控溅射工艺对比

目的 通过基于碳化硅陶瓷靶的直接溅射和基于硅靶与甲烷的反应溅射,在Si(100)基底上沉积碳化硅薄膜,对比两种工艺制备碳化硅薄膜的异同.方法 采用直接磁控溅射与反应磁控溅射工艺制备碳化硅薄膜,通过白光干涉仪、轮廓仪、X光电子能谱仪(XPS)分析薄膜粗糙度、厚度、沉积速率、组分,通过X射线衍射仪和扫描电子显微镜分析薄膜的物相结构和形貌.结果 基于硅靶和甲烷的反应溅射工艺,甲烷流量百分比为20％～70％时,沉积速率从11.3 nm/min升高到36.5 nm/min.甲烷流量百分比为20％～60％时,表面粗糙度Rq值变化不大;甲烷流量百分比为70％时,Rq值有增大的趋势.对于甲烷反应溅射工艺,硅碳元素比例可调,但甲烷气体不易控制.基于碳化硅陶瓷靶工艺,随沉积时间(即膜层沉积厚度)的增加,表面粗糙度Rq变化不大,硅碳原子比接近1:1.两种工艺制备的薄膜均为晶态,且为8H-SiC.结论 比较两种工艺,相同靶功率下,硅靶反应溅射的沉积速率明显快于碳化硅陶瓷靶.硅靶反应溅射的元素比例可调,但甲烷气体不易控制;碳化硅陶瓷靶的沉积过程稳定,硅碳原子比接近1:1.     

磁控溅射Co/AZO纳米复合薄膜的结构及光学性能

利用对靶磁控溅射交替沉积技术在不同Co靶电流下沉积Co/AZO纳米复合薄膜,并对其进行真空退火。研究了Co靶电流对薄膜的结构及光学性能的影响。结果表明,沉积态薄膜晶化程度随Co靶电流增加而降低,未发现Co的相关衍射峰;真空退火后,薄膜结晶性明显改善,0.3 A薄膜中出现了Co纳米颗粒,当Co靶电流增大到0.5 A时还发现了CoO纳米颗粒。UV-Vis光谱显示薄膜透过率随Co靶电流增加而降低,退火后透过率明显提高;光谱中还出现了高自旋态Co2+(d7)电子跃迁的3个特征吸收峰,0.2 A薄膜中尤其显著。     

自支撑金刚石膜冲蚀磨损研究

在研制的高压气动冲蚀磨损实验系统中对自支撑金刚石膜(抛光和未抛光)的冲蚀磨损进行了研究.比较了冲蚀磨料(SiO2,Al2O3,SiC和玻璃珠)、冲蚀角度、冲蚀速度,以及冲蚀时间对冲蚀磨损率的影响.利用扫描电子显微镜(SEM)观察了冲蚀磨损后金刚石膜表面形貌,对其进行了Raman光谱分析,并测定了抛光金刚石薄膜红外透过率的变化.结果表明,随冲蚀磨料硬度、冲蚀角度以及冲蚀速度的增加,自支撑金刚石膜的冲蚀磨损率增加.由于抛光和未抛光的金刚石薄膜表面形貌的差异,使得它们的冲蚀磨损率随冲蚀时间的变化过程不同.Raman光谱检测结果显示,由于冲蚀作用,金刚石膜表面部分碳的键合类型发生改变.冲蚀磨损使得抛光金刚石薄膜红外透过率降低,采用180目SiC磨料,在134 m/s的速度下冲蚀4 h,红外透过率降低约20%.     

射频辉光放电等离子体辅助化学气相沉积法制备类金刚石碳膜工艺与性能表征

使用射频辉光放电等离子体辅助化学气相沉积技术（简称RFGDPECVD）在玻璃载玻片表面沉积类金刚石薄膜。用原子力显微镜（AFM）、摩擦试验仪、划痕试验机测定了其表面形貌、耐磨性及附着性。采用X射线光电子能谱（XPS）、分光光度计对两种气源（C4H10、C2H2）制备的DLC薄膜微观组成和透光率进行了检测和对比。结果表明：DLC薄膜的表面光滑、平整,表面粗糙度随沉积时间的增加单调递增;耐磨性及附着性优良;与C4H10相比使用C2H2作为碳源气体可以得到较高Sp^3含量和较低Sp^1含量的DLC膜;C2H2制备DLC薄膜的透光率低于C4H10;同一种碳源气体,反应流量比例越小,则DLC薄膜的透光性越好。     

Preparation and characterization of superhydrophobic silica-based surfaces by using polypropylene glycol and tetraethoxysilane precursors

Preparation of superhydrophobic silica-based surfaces via sol-gel process by adding polypropylene glycol (PPG) polymer into the precursor solution has been developed. Surface roughness of the films was obtained by removing the organic polymer at 500 °C and then the hydrophobic groups bonded onto the films were obtained by chemical reaction with hexamethyldisilazane (HMDS). Physical properties of the as-prepared films were analyzed by contact angle measurements, scanning electron microscopy (SEM), UV-VIS scanning spectrophotometer and Fourier transform infrared (FT-IR) spectrophotometer. The experimental parameters were varied by the type of silane species, the weight ratio of PPG solution to precursor solution, the hydrolysis time of the precursor solution, the molecular weight of PPG, the casting temperature and the evaporation temperature. The phase separation of the PPG polymer rich domain occurred on the substrates at a lower temperature. The result showed that the contact angles of the films prepared at 5 °C were greater than 150° when the weight ratio of PPG solution to precursor solution was 5. In addition, the transmittance of the films was greater than 80% simultaneously.     

Fabrication of highly transparent and superhydrophobic silica-based surface by TEOS/PPG hybrid with adjustment of the pH value

Preparation of superhydrophobic silica-based thin film with high transmittance (T%) in the visible light region by adjusting different pH value of mixing solution has been developed. The hybrid films were coated by the mixing solution which included precursor solution (sol–gel process) and polypropylene glycol (PPG) polymer solution. Rough surfaces were obtained by removing the organic polymer at high temperature and then the hydrophobic groups bonded onto the films were obtained by the reaction with hexamethyldisilazane (HMDS). Characteristic properties of the as-prepared surface of the films were analyzed by contact angle measurement, scanning electron microscopy (SEM), atom force microscopy (AFM), UV–VIS scanning spectrophotometer and Fourier transform infrared (FT-IR) spectrophotometer. The experimental parameters were mainly varied by the pH value (0, 1, 2.3, 6 and 8) of the mixing solution. The result showed that the contact angle of the film was greater than 150° and the transmittance of the film was greater than 90% simultaneously when the pH value of mixing solution was adjusted to 1. In addition, the highly transparent superhydrophobic surfaces was obtained by adding 20 μL acid solution into the mixing solution, which the contact angle of the film was 156.3° as well as the transmittance of the film at the 600 nm visible light was 97.9%.     

Fabrication of patterned TiO2 thin film by a wet process

Hydrophobic/hydrophilic patterned TiO₂ thin film was successfully fabricated on a glass substrate by a wet process. A micro-nano complex structure with a high roughness was fabricated by a layer-by-layer selfassembly and liquid phase deposition (LPD) method. To fabricate superhydrophobic TiO₂ thin films, TiO₂ nanoparticles were deposited on the surface of (PAH/PAA) thin film by a LPD method and the surface of TiO₂ was modified by a hydrophobic treatment using fluoroalkyltrimethoxysilane. The RMS roughness and water contact angle of the prepared TiO₂ thin film were ca. 65.6 nm and ca. 155°. The superhydrophobic surface exposed to UV light changed to a hydrophilic surface by the photocatalytic property of TiO₂ to decompose a hydrophobic group. Finally, hydrophobic/hydrophilic patterned TiO₂ thin film with a 300 ??m dot size was fabricated. The surface morphology, transmittance, surface roughness and water contact angle of the prepared thin films were measured by a field emission scanning electron microscope, an atomic force microscope, a UV-Vis spectrophotometer and a contact angle meter.     

Plasma enhanced CVD of fluorocarbon films by low-pressure dielectric barrier discharge

Low-pressure dielectric barrier discharge (DBD) plasmas have been used to deposit polymerized fluorocarbon (FC) films on silicon substrates. The effects of discharge pressure and frequency of power supply on the film quality have been systematically investigated. The deposited films were characterized by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and static contact angle measurements. Experimental results show that FC films with a less crosslinked structure may be deposited at a relatively high pressure. Increasing the frequency of power supply leads to a significant increase in the deposition rate. All deposited FC films with a uniform microstructure show the hydrophobic property. Decreasing the frequency of power supply or increasing the deposition pressure results in the deposition of FC films with the extremely low surface roughness. The relationship between plasma parameters and the analyzed properties of deposited FC films is discussed.     

Physical properties of chemical vapour deposited nanostructured carbon thin films

A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor “turpentine oil” on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 °C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp³ bonds with diamond phase and less for SS shows graphitization effect with dominant sp² bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.     

硼碳氮薄膜的制备与表征

用电子束蒸发的方法在单晶硅(100)基片上制备了硼碳氮薄膜,通过椭圆偏振仪、X射线衍射仪(XRD)、X光电子能谱仪(XPS)、傅立叶红外光谱仪(FTIR),测试分析了薄膜厚度均匀性、成分与结构.结果表明,薄膜均匀性较好,薄膜的沉积速率非常慢;薄膜在衬底温度为常温下沉积已是晶态的,随着衬底温度升高到450 ℃,其结晶性逐渐增强;薄膜不是石墨与BN的混和膜而是C、B、N相互结合成键.     

Use of near atmospheric pressure and low pressure techniques to modification DLC film surface

Diamond-like carbon (DLC) films have been use in numerous industrial applications due to its mechanical properties such as low friction coefficient, high hardness, and high adherence on different substrate materials. It has been demonstrated that the DLC surface can be modified with oxygen plasma treatment. The purpose of this paper is to study two kinds of surface treatments (atmospheric and low pressures) using oxygen gas for different etching exposure times in DLC films. Plasma durability along the time was also evaluated. DLC films were deposited using plasma enhanced chemical vapor deposition technique. The properties of DLC treated for both techniques in different exposure times were investigated through Raman, AFM and contact angle measurements. D band position slightly shifts toward lower wave numbers after oxygen plasma etching treatment whilst the surface becomes rougher, although the roughness values are still lower. A conventional wetting contact angle method was used to study the surface properties of DLC films with different treatments. The wetting contact angle reduced significantly due to the increase of carbon–oxygen sites on the surface.     

负偏压对多弧离子镀制备的(Ti,Cr)N膜的影响

利用扫描电子显微镜、原子力显微镜等手段研究负偏压对多弧离子镀制备的(Ti,Cr)N薄膜表面缺陷、表面粗糙度、化学成分、沉积速率及硬度的影响。结果发现:随着负偏压的增加,(Ti,Cr)N薄膜的液滴受到抑制,表面粗糙度下降,沉积速率降低,硬度增加,但负偏压对薄膜的Cr含量影响较小。