Piezoelectric cantilever microphone and microspeaker

A micromachined piezoelectric cantilever transducer, which works both as a microphone and as a microspeaker, has been fabricated and tested. The 2000×2000×4.5 μm³ cantilever has a zinc oxide (ZnO) piezoelectric thin film on a supporting layer of low-pressure chemical-vapor-deposited (LPCVD) low-stress silicon nitride. A highlight of the fabrication process, which may also be relevant for other micromachined structures, is the technique for producing a flat, multilayer cantilever. The measured microphone sensitivity is fairly constant at 3 mV/μbar in the low frequency range and rises to 20 mV/μbar at the lowest resonant frequency of 890 Hz. The 3 mV/μbar sensitivity is the highest reported to date for a microphone with a micromachined diaphragm. When measured into a 2 cm³ coupler with 4 V(zero-peak) drive, the microspeaker output sound pressure level (SPL) is 75 dB at 890 Hz. It increases to approximately 100 dB SPL at 4.8 kHz with 6 V(zero-peak) drive. The measured microphone frequency response agrees well with the results of an ABAQUS simulation     

Microstructure to substrate self-assembly using capillary forces

We have demonstrated the fluidic self-assembly of micromachined silicon parts onto silicon and quartz substrates in a preconfigured pattern with submicrometer positioning precision. Self-assembly is accomplished using photolithographically defined part and substrate binding sites that are complementary shapes of hydrophobic self-assembled monolayers. The patterned substrate is passed through a film of hydrophobic adhesive on water, causing the adhesive to selectively coat the binding sites. Next, the microscopic parts, fabricated from silicon-on-insulator wafers and ranging in size from 150×150×15 μm³ to 400×400×50 μm ³, are directed toward the substrate surface under water using a pipette. Once the hydrophobic pattern on a part comes into contact with an adhesive-coated substrate binding site, shape matching occurs spontaneously due to interfacial free energy minimization. In water, capillary forces of the adhesive hold the parts in place with an alignment precision of less than 0.2 μm. Permanent bonding of the parts onto quartz and silicon is accomplished by activating the adhesive with heat or ultraviolet light. The resulting rotational misalignment is within ~0.3°. Using square sites, 98-part arrays have been assembled in less than 1 min with 100% yield. The general microassembly approach described here may be applied to parts ranging in size from the nano- to milliscale, and part and substrate materials including semiconductors, glass, plastics, and metals     

Thermal conductivity of doped polysilicon layers

The thermal conductivities of doped polysilicon layers depend on grain size and on the concentration and type of dopant atoms. Previous studies showed that layer processing conditions strongly influence the thermal conductivity, but the effects of grain size and dopant concentration were not investigated in detail. The current study provides thermal conductivity measurements for low-pressure chemical-vapor deposition (LPCVD) polysilicon layers of thickness near 1 μm doped with boron and phosphorus at concentrations between 2.0×10¹⁸ cm^-3 and 4.1×10¹⁹ cm^-3 for temperatures from 20 K to 320 K. The data show strongly reduced thermal conductivity values at all temperatures compared to similarly doped single-crystal silicon layers, which indicates that grain boundary scattering dominates the thermal resistance. A thermal conductivity model based on the Boltzmann transport equation reveals that phonon transmission through the grains is high, which accounts for the large phonon mean free paths at low temperatures. Algebraic expressions relating thermal conductivity to grain size and dopant concentration are provided for room temperature. The present results are important for the design of MEMS devices in which heat transfer in polysilicon is important     

Elimination of post-release adhesion in microstructures usingconformal fluorocarbon coatings

The adhesion of polysilicon microstructures to their substrates is eliminated using a relatively conformal hydrophobic fluorocarbon (FC) coating grown in a field-free zone of a plasma reactor. Experiments show that the FC film deposition on top of the microstructure and on the underside was approximately 2:1. The FC coating is able to cover the entire underside of a 200×200 μm² plate, with a 20% deposition nonuniformity. The coating exhibits a contact angle of 110° and is able to prevent adhesion of cantilever beams and doubly supported beams to their substrates even after direct immersion in DI water. The durability of the coating was tested using an accelerated aging method, predicting a lifetime of greater than ten years at 150°C. Periodic wear tests indicate that the coating remains hydrophobic even after 10⁷ contact cycles     

A contact-type piezoresistive micro-shear stress sensor forabove-knee prosthesis application

A prototype contact-type micro piezoresistive shear-stress sensor that can be utilized to measure the shear stress between skin of stump and socket of above-knee (AK) prosthesis was designed, fabricated and tested. Micro-electro-mechanical system (MEMS) technology has been chosen for the design because of the low cost, small size and adaptability to this application. In this paper, the finite element method (FEM) package ANSYS has been employed for the stress analysis of the micro shear-stress sensors. The sensors contain two transducers that will transform the stresses into an output voltage. In the developed sensor, a 3000×3000×300 μm³ square membrane is formed by bulk micromachining of an n-type (100) monolithic silicon. The piezoresistive strain gauges were implanted with boron ions with a dose of 10¹⁵ atoms/cm². Static characteristics of the shear sensor were determined through a series of calibration tests. The fabricated sensor exhibits a sensitivity of 0.13 mV/mA-MPa for a 1.4 N full scales shear force range and the overall mean hysteresis error is than 3.5%. In addition, the results simulated by FEM are validated by comparison with experimental investigations     

Fabrication of ultrathin p++ silicon microstructuresusing ion implantation and boron etch-stop

This paper discusses the fabrication of submicron p⁺⁺ silicon microstructures for a number of MEMS applications using boron ion implantation, rapid thermal annealing, and boron etch-stop. To form these thin structures, the silicon is implanted with boron at an energy of 40 keV and doses of 5×10¹⁵ cm^-2 and 7×10¹⁵ cm^-2, which produce a peak concentration of more than 10²⁰ cm^-3, sufficient for achieving an effective etch-stop in ethylene diamine pyrocathecol. The thickness of the p⁺⁺ layer varies from 0.2 to 0.3 μm depending on the annealing time and temperature. SUPREM simulation has been used to determine optimum implantation and annealing conditions. A number of microstructures, including thin silicon diaphragms as large as 2 mm on a side and 0.2 μm thick, hot wire anemometers with a temperature coefficient of resistance of ~1600 ppm/°C, and piezoresistive sound detectors, have been fabricated with high reproducibility, uniformity, and yield     

Fabrication of metallic heat exchangers using sacrificial polymermandrils

This paper demonstrates the use of poly(dimethylsiloxane) (PDMS), polyurethane (PU), epoxy, and poly(methyl methacrylate) (PMMA) as mandrils to fabricate metallic heat exchangers having 300-700 μm internal channels. The mandrils were prepared using two soft lithographic techniques-replica molding and microembossing. To fabricate the heat exchangers, the polymeric mandrils were coated with a thin layer of metal by thermal evaporation or sputtering; this layer acted as the cathode for electrodeposition of a shell of nickel or copper that was 100 μm thick. The polymers were removed by burning them out at 400°C in air, or by dissolving them with a tetrahydrofuran solution of tetrabutylammonium fluoride. Studies of heat dissipation showed that the nickel heat exchangers with features that range in size from 150-750 μm have thermal resistances ranging from 0.07 to 0.12°^-2 C W^-1 cm at flow rates of water of ~20 L h^-1 and pressures of 8.6-83×10³ N m^-2     

Surface micromachined polysilicon heart cell force transducer

A microelectromechanical systems (MEMS) force transducer system, with a volume less than 1 mm³ millimeter, has been developed to measure forces generated by living heart muscle cells. Cell attachment and measurement of contractile forces have been demonstrated with a commercially fabricated surface-micromachined hinged polysilicon device. Two freestanding polysilicon clamps, each suspended by a pair of microbeams, hold each end of a heart cell. When the cell contracts, the beam bend and force is determined from the measured deflection and the spring constant in the beams. The average maximal force over seven contractile experiments using a calcium solution stimulus was F_max =12.6±4.66 μN. Normalizing to a cross-sectional area, F _max/area was 23.7±8.6 mN/mm². These force data were also correlated to optically imaged striation pattern periodicity. Intermediate forces were also measured in response to a calcium solution gradient and showed similar behavior to those measured in other laboratories. This MEMS force transducer demonstrates the feasibility of higher fidelity measurements from muscle cells and, thus, an improved understanding of the mechanisms of muscle contraction     

A merged process for thick single-crystal Si resonators and BiCMOScircuitry

A simple process has been developed which combines thick single-crystal Si micromechanical devices with a bipolar complimentary metal-oxide-semiconductor (BiCMOS) integrated circuit process. This merged process allows the integration of Si mechanical resonators as thick as 11 μm with any integrated circuit process with the addition of only a single masking step. The process does not require the use of Si on insulator wafers or any type of wafer bonding. The Si resonators were etched in an inductively coupled plasma source which allowed deep trenches to be fabricated with high aspect ratios and smooth sidewall surfaces. Clamped-clamped beam Si resonators that were 500 μm long, 5 μm wide, and 11 μm thick have been fabricated and tested. A typical resonator had a resonance frequency of 28.9 kHz and a maximum amplitude of vibration at resonance of 4.6 μm in air. The average measured resonance frequency across a 4-in-diameter Si wafer was within 0.5% of that predicted by theory. Working NMOS transistors were fabricated and tested on the same chip as the resonator with measured threshold voltages of 0.6 V and an output conductance of 2.0×10 ^-5 Ω^-1 for a gate voltage of 4 V     

MgO sacrificial layer for micromachining uncooled Y-Ba-Cu-O IRmicrobolometers on Si3N4 bridges

This paper describes a new micromachining technique for fabrication of semiconducting yttrium barium copper oxide (YBCO) microbolometers using magnesium oxide (MgO) as the sacrificial layer. This type of bolometer can be operated at room temperature, providing a low-cost alternative for more expensive cryogenically cooled thermal detectors used for infrared (IR) imaging. The new micromachining techniques described here would enable the fabrication of YBCO IR focal plane array (FPA) with CMOS signal processing circuitry. Devices were fabricated by growing YBCO films on 4000-Å-thick suspended Si₃N₄ membranes measuring 40×40 μm² in area and extended over micromachined air gaps, which provide the low thermal conductivity that is required for high responsivity. The gap was created by etching an MgO sacrificial layer. This is the first example of using MgO in this type of application. The MgO sacrificial layer technique is fully CMOS compatible and presents no major fabrication challenges. Thermal conductivities achieved in vacuum with the Si₃N₄ suspended structures were on the order of 10^-7 W/K, yielding an effective thermal isolation for bolometer operation. Optical characterization has shown responsivity up to 60 kV/W and detectivity over 10⁸ cm.Hz^1/2/W to black-body IR radiation, indicating that this technology is a suitable candidate for low-cost thermal imaging     

Performance of GaAs microbridge thermocouple infrared detectors

GaAs microbridge thermocouples with lengths ranging from 40 to 650 μm and operating at room temperature have been fabricated for the detection of infrared radiation. A CO₂ laser of a 10.6 μm wavelength was used to characterize the performance of the detectors in air and in vacuum. A responsivity of 4.2 V/W with a corresponding detectivity D*=8×10⁶ cm Hz^1/2/W and a time constant of 2.2 ms have been measured in vacuum for 650-μm-long bridges, and a shorter time constant of 50 μs was obtained for 40-μm-long bridges. An analytic thermal transport model has been used to simulate the operation of the sensors. The heat-transfer coefficient has been evaluated by comparing the data from air and vacuum measurements. The spectral response and the absorbance of the microbridge have also been presented     

A micro active probe device compatible with SOI-CMOS technologies

A surface-micromachined active probe device with built-in electrostatic actuator and on-chip CMOS circuits is described. The device has been fabricated on a silicon-on-insulator (SOI) substrate using a 0.6-μm CMOS-based process containing four polysilicon layers and one metal layer, and its basic functionality has been verified experimentally. A 0.135-μm-thick surface silicon layer of an SOI substrate was used to form cantilever beams. The very thin structures enable a probe to be turned on at a voltage as low as several volts. A stopper structure, used to avoid contact between a deflector electrode and its paired stator electrode, was formed with a small overlap area of approximately 0.05 μm². The small overlap area results in a small adhesion force, approximately 70 nN. An n-p-n junction was exploited as an isolator in the probe. A p-n junction in a released beam had only a 5-pA leakage current at a 9-V reverse bias. In addition, it has been found that electrostatic charging is a major source causing unrestorable postrelease stiction     

Independent tuning of linear and nonlinear stiffness coefficients[actuators]

Using a combination of electrostatic actuators, we present a method to independently tune the linear and nonlinear stiffness coefficients of a uniaxial micromechanical device. To demonstrate the method's capability, we investigated the tuning of an oscillator with linear and cubic restoring forces. We successfully tuned the cubic stiffness from 0.31×10¹¹ to -5.1×10¹¹ N/m³ without affecting the resonant frequency or the linear stiffness. Numerical results are presented which characterize the actuators and indicate important design parameters. Finally, issues such as actuator design, quadratic stiffness, and stability are discussed     

6-MHz 2-N/m piezoresistive atomic-force microscope cantilevers withINCISIVE tips

Piezoresistive atomic force-microscope (AFM) cantilevers with lengths of 10 μm, displacement sensitivities of (ΔR/R)/A 1.1×10^-5, displacement resolutions of 2×10^-3 A/√Hz, mechanical response times of less than 90 ns, and stiffnesses of 2 N/m have been fabricated from a silicon-on-insulator (SOI) wafer using a novel frontside-only release process. To reduce mass, the cantilevers utilize novel inplane crystallographically defined silicon variable aspect-ratio (INCISIVE) tips with radius of curvature of 40 A. The cantilevers have been used in an experimental AFM data-storage system to read back data with an areal density of 10 Gb/cm ². Four-legged cantilevers with both imaging and thermomechanical surface modification capabilities have been used to write 2-Gb/cm² data at 50 kb/s on a spinning polycarbonate sample and to subsequently read the data. AFM imaging has been successfully demonstrated with the cantilevers. Some cantilever designs have sufficient displacement resolution to detect their own mechanical-thermal noise in air. The INCISIVE tips also have applications to other types of sensors     

Embedding of complete binary trees into meshes with row-columnrouting

This paper considers the problem of embedding complete binary trees into meshes using the row-column routing and obtained the following results: a complete binary tree with 2^p-1 nodes can be embedded (1) with link congestion one into a ⁹/₈√(2^p)×⁹/ ₈√(2^p) mesh when p is even and a √( ⁹/₈2^p)×√(⁹/ ₈2^p) mesh when p is odd, and (2) with link congestion two into a √(2^p)×√(2^p) mesh when p is even, and a √(2^p-1)×√(2^p-1) mesh when p is odd     

Piezoelectric microphone with on-chip CMOS circuits

An IC-processed piezoelectric microphone with on-chip, large-scale integrated (LSI) CMOS circuits has been designed, fabricated, and tested in a joint, interactive process between a commercial CMOS foundry and a university micromachining facility. The 2500×2500×3.5 μm ³ microphone has a piezoelectric ZnO layer on a supporting low-pressure chemical-vapor-deposited (LPCVD), silicon-rich, silicon nitride layer. The optimum residual-stress-compensation scheme for maximizing microphone sensitivity produces a slightly buckled microphone diaphragm. A model for the sensitivity dependence of device operation to residual stress is confirmed by applying external strain. The packaged microphone has a resonant frequency of 18 kHz, a quality factor Q≈40, and an unamplified sensitivity of 0.92 mV/Pa. Differential amplifiers provide 49 dB gain with 13 μV A-weighted noise at the input     

A new silicon gas-flow sensor based on lift force

This paper presents the first silicon-flow sensor based on lift force. The sensor is a bulk-micromachined airfoil structure that uses the lift force as a sensing principle. The lift force acts normal to the flow in contrast to drag-force sensor types, where the force acts in the flow direction. The sensor utilizes the special distribution of the lift force along the length of the sensor structure. Since the sensor, like an airfoil, is mounted at a small angle to the flow, it induces very little flow disturbance. The sensor consists of two plates connected to a center beam. Each plate is 5×5-mm square with a thickness of 30 μm. The flow-induced forces deflect the two plates in the same direction, but with different magnitude. The deflections are detected by polysilicon strain gauges. The differential mode bridge makes the sensor insensitive to common mode deflection, e.g., acceleration forces. The lift-force principle is characterized using fundamental airfoil theory. The sensor has been experimentally verified, and a flow sensitivity of 7.4 μV/V/(m/s)² has been measured in both flow directions     

Thermally actuated microprobes for a new wafer probe card

A new type of MEMS microprobe was designed and fabricated which can be used for a nest generation wafer probe card. A prototype MEMS probe card consisting of an array of microprobes individually actuated by bimorph heating to make contact with the test chip was also fabricated. This probe card is called the CHIPP (Conformable, HIgh-Pin count, Programmable) card and can be designed to contact up to 800 I/O pads along the perimeter of a 1-cm² chip with a microprobe repeat distance of approximately 50 μm. Microprobes for a prototype CHIPP probe card have been fabricated with a variety of cantilever structures including Al-SiO₂, W-SiO₂ and Al-Si bimorphs, and with the resistive heater placed either inside or on the surface of the cantilever. Ohmic contacts between tips and bond pads were tested with contact resistance as low as 250 mΩ. The deflection efficiency varies from 5.23-9.6 μm/mW for cantilever lengths from 300-500 μm. The maximum reversible deflection is in the range of 280 μm. The measured resonant frequency is 8.16 kHz for a 50×500 μm device and 19.4 kHz for a 40×300 μm device. Heat loss for devices operating in air was found to be substantially higher than for vacuum operation with a heat loss ratio of about 2/1 for a heater inside the structure, and 4.25/1 for a structure with the heater as an outer layer of the cantilever     

Porous polycrystalline silicon: a new material for MEMS

A new technique for the fabrication of thin patterned layers of porous polycrystalline silicon (polysilicon) and surface micromachined structures is presented. First, a multilayer structure of polysilicon between two layers of low-stress silicon nitride is prepared on a wafer of silicon. Electrochemical anodization with an external cathode takes place in an RF solution. A window in the outer nitride layer provides contact between the polysilicon and the HF solution; the polysilicon layer contacts the substrate through openings in the lower silicon nitride layer (remote from the upper windows). Porous polysilicon growth in the lateral direction is found at rates as high as 15 μm min^-1 in 12M (25%, wgt) HF to be controlled by surface-reaction kinetics. A change in morphology occurs when either the anodic potential is raised or the HF concentration is decreased, causing the polysilicon to be electropolished. The etch front advances proportionally to the square root of time as expected for a mass-transport-controlled process. Similar behavior is observed in HF anodic reactions of single-crystal silicon. Dissolution of the polysilicon layer is confirmed using profilometry and scanning electron microscopy. Enclosed cavities (chambers surrounded by porous plugs) are formed by alternating between pore formation and uniform dissolution. Porous polysilicon also forms over a broad-area layer of polycrystalline silicon that has been deposited without overcoating the silicon wafer with a thin film of silicon nitride. The resulting porous layer may be useful for gas-absorption purposes in ultrasonic sensors     

Process-dependent thin-film thermal conductivities for thermal CMOSMEMS

The thermal conductivities κ of the dielectric and conducting thin films of three commercial CMOS processes were determined in the temperature range from 120 to 400 K. The measurements were performed using micromachined heatable test structures containing the layers to be characterized. The κ values of thermally grown silicon oxides are reduced from bulk fused silica by roughly 20%. The κ of phosphosilicate and borophosphosilicate glasses are 0.94±0.08 W m^-1 K^-1 and 1.18±0.06 W m^-1 K^-1, respectively, at 300 K. A plasma-enhanced chemical-vapor-deposition silicon-nitride layer has a thermal conductivity of 2.23±0.12 W m^-1 K^-1 at 300 K. This value is between published data for atmospheric-pressure CVD and low-pressure CVD nitrides. For the metal layers, we found thermal conductivities between 167 W m^-1 K^-1 and 206 W m ^-1 K^-1, respectively, at 300 K, to be compared with 238 W m^-1 K^-1 of bulk aluminum. The temperature-dependent product κρ of κ with the electrical resistivity ρ agrees better than 8.2% between 180-400 K with that of pure bulk aluminum. The κ values of the polysilicon layers are between 22.4 W m^-1 K^-1 and 37.3 W m^-1 K^-1 at 300 K. They are reduced from similarly doped bulk silicon by factors of between 2.0-1.3. The observed discrepancies between thin film and bulk data demonstrate the importance of determining the process-dependent thermal conductivities of CMOS thin films