Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

SiO_xN_y films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O₂ and N₂ as gaseous precursors diluted in He. Interface properties of SiO_xN_y films have been investigated by analyzing high-frequency and quasistatic capacitance-voltage characteristics of metal-oxide-semiconductor capacitors. It is found that addition of N into the oxide increases both interface state density (D_it) and positive fixed charge density (Q_f). After forming gas anneal, D_it decreases largely with decreasing N₂/O₂ flow ratio from 1 to 0.01 while the change of Q_f is insignificant. These results suggest that low N₂/O₂ flow ratio is a key parameter to achieve a low D_it and relatively high Q_f, which is effective for field effect passivation of n-type Si surfaces.     

A new regime for high rate growth of nanocrystalline diamond films using high power and CH4/H2/N2/O2 plasma

In this work, we report high growth rate of nanocrystalline diamond (NCD) films on silicon wafers of 2 inches in diameter using a new growth regime, which employs high power and CH₄/H₂/N₂/O₂ plasma using a 5 kW MPCVD system. This is distinct from the commonly used hydrogen-poor Ar/CH₄ chemistries for NCD growth. Upon rising microwave power from 2000 W to 3200 W, the growth rate of the NCD films increases from 0.3 to 3.4 μm/h, namely one order of magnitude enhancement on the growth rate was achieved at high microwave power. The morphology, grain size, microstructure, orientation or texture, and crystalline quality of the NCD samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, and micro-Raman spectroscopy. The combined effect of nitrogen addition, microwave power, and temperature on NCD growth is discussed from the point view of gas phase chemistry and surface reactions.     

An exploratory study of diesel soot oxidation with NO2 and O2 on supported metal oxide catalysts

A number of supported metal oxide catalysts were screened for their catalytic performance for the oxidation of carbon black (CB; a model diesel soot) using NO₂ as the main oxidant. It was found that contact between the carbon and catalyst was a key factor in determining the rate of oxidation by NO₂. Oxides with low melting points, such as Re₂O₇, MoO₃ and V₂O₅ showed higher activities than did Fe₃O₄ and Co₃O₄. The activities of MoO₃ and V₂O₅ on various supporting materials were also examined. MoO₃/SiO₂ was the most active catalyst among the supported MoO₃ examined, whereas, V₂O₅/MCM-41 showed the highest activity among the supported V₂O₅. Different performances of the supported MoO₃ catalysts were explained by the interaction of MoO₃ with the supports: a strong MoO₃/support interaction may result in a poor mobility of MoO₃ and a poor activity for oxidation of carbon by NO₂. The high activity of V₂O₅/MCM-41 was associated with its catalysis of the oxidation of SO₂ by NO₂ to form SO₃, which substantially promotes oxidation of carbon by NO₂. Addition of transition metal oxides or sulfates to supported MoO₃ and V₂O₅ was also investigated. Combining MoO₃ or V₂O₅ with CuO on SiO₂, adding VOSO₄ to MoO₃/SiO₂ or MoO₃/Al₂O₃ and adding TiOSO₄ or CuSO₄ to V₂O₅/Al₂O₃ improved the catalytic performance.     

Electrodeposition and characterization of Fe80Ga20 alloy films

Due to its high magnetostriction and good mechanical properties Fe₈₀Ga₂₀ is interesting for magnetostrictive microactuators and sensors. Here we use electrodeposition to grow Fe–Ga films onto Au and Pt coated Si substrates by potentiostatic and pulse potential deposition. Composition, microstructure and structure are analysed. The desired composition of Fe₈₀Ga₂₀ was obtained at −1.4 V_SCE and −1.5 V_SCE, respectively. The origin of low reproducibility and high oxygen content up to 50 at.% is investigated. Optimum deposition conditions to achieve dense, homogeneous films with low oxygen content are identified. In these films the saturation magnetization reaches a maximum value of 1.7 T confirming the high quality of electrodeposited films.     

Similarity and differences in the oxidative dehydrogenation of C2–C4 alkanes over nano-sized VOx species using N2O and O2

The effect of O₂ and N₂O on alkane reactivity and olefin selectivity in the oxidative dehydrogenation of ethane, propane, n-butane, and iso-butane over highly dispersed VO_x species (0.79 V/nm²) supported on MCM-41 has been systematically investigated. For all the reactions studied, olefin selectivity was significantly improved upon replacing O₂ with N₂O. This is due to suppressing CO_x formation in the presence of N₂O. The most significant improving effect of N₂O was observed for iso-butane dehydrogenation: S(iso-butene) was ca. 67% at X(iso-butane) of 25%.Possible origins of the superior performance of N₂O were derived from transient experiments using ¹⁸O₂ traces. ¹⁸O¹⁶O species were detected in ¹⁸O₂ and ¹⁸O₂–C₃H₈ transient experiments indicating reversible oxygen chemisorption. In the presence of alkanes, the isotopic heteroexchange of O₂ strongly increased. Based on the distribution of labeled oxygen in CO_x and in O₂ as well as on the increased CO_x formation in sequential O₂–C₃H₈ experiments, it is suggested that non-lattice oxygen species (possibly of a bi-atomic nature) originating from O₂ are non-selective ones and responsible for CO_x formation. These species are not formed from N₂O.     

Theoretical and experimental study on the emission characteristics of waste plastics incineration by modified O2/RFG combustion technology

For mitigating the emission of greenhouse gas CO₂ from general air combustion systems, a clean combustion technology O₂/RFG is in development. The O₂/RFG combustion technology can significantly enhance the CO₂ concentration in the flue gas; however, using almost pure oxygen or pure CO₂ as feed gas is uneconomic and impractical. As a result, this study proposes a modified O₂/RFG combustion technology in which the minimum pure oxygen is mixed with the recycled flue gas and air to serve as the feed gas. The effects of different feed gas compositions and ratios of recycled flue gas on the emission characteristics of CO₂, CO and NO_x during the plastics incineration are investigated by theoretical and experimental approaches.Theoretical calculations were carried out by a thermodynamic equilibrium program and the results indicated that the emissions of CO₂ were increased with the O₂ concentrations in the feed gas and the ratios of recycled flue gas increased. Experimental results did not have the same trends with theoretical calculations. The best feed gas composition of the modified O₂/RFG combustion was 40% O₂ + 60% N₂ and the best ratio of recycled flue gas was 15%. As the O₂ concentration in feed gas and the ratio of recycled flue gas increased, the total flow rates and pressures of feed gas reduced. The mixing of solid waste and feed gas was incomplete and the formation of CO₂ decreased. Moreover, the emission of CO was decreased as the O₂ concentration in feed gas and the ratio of recycled flue gas increased. The emission of NO_x gradually increased with rising the ratio of recycled flue gas at lower O₂ concentration (<40%) but decreased at higher O₂ concentration (>60%).     

Amorphous LiCoO2 thin films on Li1+x+yAlxTi2−xSiyP3−yO12 prepared by radio frequency magnetron sputtering for all-solid-state Li-ion batteries

Amorphous LiCoO₂ thin films were deposited on the NASICON-type glass ceramics, Li_1+x+yAl_xTi_2−xSi_yP_3−yO₁₂ (LATSP), by radio frequency (RF) magnetron sputtering below 180 °C. The as-deposited LiCoO₂ thin films were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscope. All-solid-state Li/PEO₁₈-Li (CF₃SO₂)₂N/LATSP/LiCoO₂/Au cells were fabricated using the amorphous film. The electrochemical performance of the cells was investigated by galvanostatic cycling, cyclic voltammetry, potentiostatic intermittent titration technique and electrochemical impedance spectroscopy. It was found that the amorphous LiCoO₂ thin film shows a promising electrochemical performance, making it a potential application in microbatteries for microelectronic devices.     

Properties of nano-crystalline LiMn2O4 thin films deposited by pulsed laser deposition

Properties of LiMn₂O₄ thin films deposited on polished stainless steel substrates at 400 °C and 200 mTorr of oxygen by pulsed laser deposition have been characterized by electrochemical measurements and physical analyses. The film was mainly composed of nano-crystals less than 100 nm. A maximum specific capacity of 141.9 mAh/g cycled between 3.0 and 4.5 V with a current density of 20 μAh/cm² has been achieved. The film exhibited an excellent cycling stability up to 500 cycles. The low charge-transfer resistance at high potentials as revealed by AC impedance resulted in high charge/discharge potential and more capacity. The effect of overdischarge was limited and Jahn-Teller effect was overcome to a significant extent in this nano-crystalline film. Ex situ XRD, Raman and XPS provided supporting evidence in the changes in structure, reactivity and cycling stability of nano-crystalline LiMn₂O₄ film cathodes under different charge/discharge states and cycling tests. SEM images also revealed the stability of the surface topography after a long-term cycling test.     

Investigation of NO Adsorption and NO/O2 Co-adsorption on NOx-Storage-Components by DRIFT-Spectroscopy

NO adsorption and NO/O₂ co-adsorption on CeO₂ at different temperatures was studied by DRIFT-Spectroscopy. The results indicate that this oxide plays an important role in storing NO _x . FTIR studies show that NO adsorption is dominated by the formation of nitrite species. Furthermore, cis- and trans hyponitrite species are detected. Co-adsorption of NO/O₂ leads to the formation of nitrates. The experimental data show that the formation of nitrates is a consecutive reaction: adsorption of NO to form nitrite species (NO₂ ^–), followed by an oxidation to form nitrate species (NO₃ ^–).     

Scanning electrochemical microscopy studies of micropatterned copper sulfide (CuxS) thin films fabricated by a wet chemistry method

Patterned copper sulfide (Cu_xS) microstructures on Si (1 1 1) wafers were successfully fabricated by a relatively simple solution growth method using copper sulfate, ethylenediaminetetraacetate and sodium thiosulfate aqueous solutions as precursors. The Cu_xS particles were selectively deposited on a patterned self-assembled monolayer of 3-aminopropyltriethoxysilane regions created by photolithography. To obtain high quality Cu_xS films, preparative conditions such as concentration, proportion, pH and temperature of the precursor solutions were optimized. Various techniques such as optical microscopy, atomic force microscopy (AFM), X-ray diffraction, optical absorption and scanning electrochemical microscopy (SECM) were employed to examine the topography and properties of the micro-patterned Cu_xS films. Optical microscopy and AFM results indicated that the Cu_xS micro-pattern possessed high selectivity and clear edge resolution. From combined X-ray diffraction analysis and optical band gap calculations we conclude that Cu₉S₅ (digenite) was the main phase within the resultant Cu_xS film. Both SECM image and cyclic voltammograms confirmed that the Cu_xS film had good electrical conductivity. Moreover, from SECM approach curve analysis, the apparent electron-transfer rate constant (k) in the micro-pattern of Cu_xS dominated surface was estimated as 0.04 cm/s. The SECM current map showed high edge acuity of the micro-patterned Cu_xS.     

Preparation of TiO2 thin films on glass beads by a rotating plasma reactor

We experimentally coated the TiO₂ thin films on the glass beads by a rotating cylindrical plasma chemical vapor deposition (PCVD) process. The precursors for the thin films were generated by the plasma reactions, and they deposited on the glass beads to become the grains on the films. The TiO₂ thin films grow more quickly on the glass beads by increasing the reactor pressure, or the rotation speed of the reactor. As the applied power increases, the thickness of the thin films on the glass beads decreases. As the thickness of the TiO₂ thin films increases, the uniformity of the TiO₂ thin films decreases due to the deposition of larger grains or due to the increase of crack size. The rotating cylindrical PCVD process can be a good method to prepare the particles coated with metal or organic-doped thin films for highly functionalized materials.     

Kinetic modeling of storage and reduction with different reducing agents (CO, H2, and C2 H4) on a Pt–Ba/-Al2O3 catalyst in the presence of CO2 and H2O

In this paper a global reaction kinetic model is used to understand and describe the NO_x storage/reduction process in the presence of CO₂ and H₂O. Experiments have been performed in a packed bed reactor with a Pt–Ba/γ-Al₂O₃ powder catalyst (1 wt% Pt and 30 wt% Ba) with different lean/rich cycle timings at different temperatures (200, 250, and ) and using different reductants (H₂, CO, and C₂H₄). Model simulations and experimental results are compared. H₂O inhibits the NO oxidation capability of the catalyst and no NO₂ formation is observed. The rate of NO storage increases with temperature. The reduction of stored NO with H₂ is complete for all investigated temperatures. At temperatures above , the water gas shift (WGS) reaction takes place and H₂ acts as reductant instead of CO. At , CO and C₂H₄ are not able to completely regenerate the catalyst. At the higher temperatures, C₂H₄ is capable of reducing all the stored NO, although C₂H₄ poisons the Pt sites by carbon decomposition at . The model adequately describes the NO breakthrough profile during 100 min lean exposure as well as the subsequent release and reduction of the stored NO. Further, the model is capable of simulating transient reactor experiments with 240 s lean and 60 s rich cycle timings.     

Electrochemical anticorrosion performance evaluation of Al2O3 coatings deposited by MOCVD on an industrial brass substrate

Alumina (Al₂O₃) coatings of different thickness were deposited on OT59 brass substrate (BS) using the metal organic chemical vapour deposition (MOCVD) technique to evaluate the corrosion performance by EIS measurements. The used precursor was dimethyl-aluminium-isopropoxide. Electrochemical characterizations of the deposited films were performed in a standard very aggressive acidic solution (aerated 1N H₂SO₄ at 25 °C up to 168 h of immersion time) by means of direct current method (Tafel curves) and electrochemical impedance spectroscopy (EIS). The Rutherford backscattering spectroscopy (RBS) indicated that the films are very pure with the correct Al₂O₃ stoichiometry, while the IR absorption spectra showed that the films did not contain any OH groups. The surface film morphology was investigated by atomic force microscopy (AFM) and displayed a globular texture. The films were very smooth, with a maximum root mean square roughness, for example, of 14 nm for a 0.96 μm thick coating. The EIS data confirmed, as expected, that a 2.40 μm Al₂O₃ layer ensures the best corrosion protection after 168 h of immersion in the very acidic environment used.     

Adsorption of NO and NO2 on ceria–zirconia of composition Ce0.69Zr0.31O2: A DRIFTS study

In this study, the nature of surface intermediates generated by adsorption of NO and NO₂ on a commercial ceria–zirconia powder of composition Ce_0.69Zr_0.31O₂ was investigated using Diffuse Reflectance Infrared Fourier Transform Spectroscopy (DRIFTS). The conditions of occurrence of the main adsorbed species, i.e. nitrites and nitrates, are studied semi-quantitatively as a function of catalyst pre-treatment and/or type of adsorbed NO_x molecule. On the partially reduced ceria–zirconia, the primary role of NO_x is to re-oxidize the surface via adsorption/decomposition on reduced sites. By contrast, the formation of nitrites and nitrates readily occurs on oxidized surfaces, the latter kind of species being strongly promoted in the case of NO₂ adsorption only.     

Electrochemical performance of LiFePO4 thin films with different morphology and crystallinity

LiFePO₄ thin films have been prepared by pulsed laser deposition method on titanium substrates. The influence of the deposition parameters, e.g. substrate temperature, ambient argon pressure, and post-annealing on the crystallinity and morphology of as-deposited thin films are investigated. Well-crystallized pure olivine-phase is obtained under optimized deposition condition (20–30 Pa, 500 °C). It shows a high electrochemical activity (83% theoretical capacity) at low current density (0.33 μA cm⁻², 1/20 C) and elevated testing temperature (45 °C). Moderate post-annealing treatment can enhance the utilization of the films further. The deposition of the film at a too high temperature or post-annealing for too long time could introduce Fe³⁺ impurities, i.e., Li₃Fe₂(PO₄)₃ and Fe₄(P₂O₇)₃, which can be easily detected by extending the electrochemical test voltage down to 2.5 V.     

A comparative study of the selective oxidation of NH3 to N2 over gold, silver and copper catalysts and the effect of addition of Li2O and CeOx

This paper describes the selective oxidation of ammonia into nitrogen over copper, silver and gold catalysts between room temperature and 400 °C using different NH₃/O₂ ratios. The effect of addition of CeO_x and Li₂O on the activity and selectivity is also discussed. The results show that copper and silver are very active and selective toward N₂. However the multicomponent catalysts: M/Li₂O/CeO_x/Al₂O₃ (M: Au, Ag, Cu) perform the best. On all three metal containing catalysts the activity and selectivity is influenced by the particle size and the interaction between metal particles and support.     

Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

Structural, microstructural and ferroelectric properties of Pb_0.90Ca_0.10TiO₃ (PCT10) thin films deposited using La_0.50Sr_0.50CoO₃ (LSCO) thin films which serve only as a buffer layer were compared with properties of the thin films grown using a platinum-coated silicon substrate. LSCO and PCT10 thin films were grown using the chemical solution deposition method and heat-treated in an oxygen atmosphere at 700 °C and 650 °C in a tube oven, respectively. X-ray diffraction (XRD) and Raman spectroscopy results showed that PCT10 thin films deposited directly on a platinum-coated silicon substrate exhibit a strong tetragonal character while thin films with the LSCO buffer layer displayed a smaller tetragonal character. Surface morphology observations by atomic force microscopy (AFM) revealed that PCT10 thin films with a LSCO buffer layer had a smoother surface and smaller grain size compared with thin films grown on a platinum-coated silicon substrate. Additionally, the capacitance versus voltage curves and hysteresis loop measurement indicated that the degree of polarization decreased for PCT10 thin films on a LSCO buffer layer compared with PCT10 thin films deposited directly on a platinum-coated silicon substrate. This phenomenon can be described as the smaller shift off-center of Ti atoms along the c-direction 〈001〉 inside the TiO₆ octahedron unit due to the reduction of lattice parameters. Remnant polarization (P_r) values are about 30 μC/cm² and 12 μC/cm² for PCT10/Pt and PCT10/LSCO thin films, respectively. Results showed that the LSCO buffer layer strongly influenced the structural, microstructural and ferroelectric properties of PCT10 thin films.     

The effect of co-doping with MgO and Yb2O3 on the structure and electrical conductivity of the Sm2Zr2O7 pyrochlore

SmYb_1−xMg_xZr₂O_7−x/2 (0 ≤ x ≤ 0.15) ceramics are pressureless-sintered at 1973 K for 10 h in air. The structure and electrical conductivity of SmYb_1−xMg_xZr₂O_7−x/2 ceramics are investigated by the X-ray diffraction, scanning electron microscopy and impedance spectroscopy measurements. SmYb_1−xMg_xZr₂O_7−x/2 ceramics exhibit a defect fluorite-type structure. The measured electrical conductivities of SmYb_1−xMg_xZr₂O_7−x/2 ceramics obey the Arrhenius relation, and electrical conductivity of each composition increases with increasing temperature from 673 to 1173 K. At identical temperature levels, the electrical conductivity of SmYb_1−xMg_xZr₂O_7−x/2 ceramics gradually increases with increasing magnesia content. SmYb_1−xMg_xZr₂O_7−x/2 ceramics are oxide-ion conductors in the oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The electrical conductivity obtained in SmYb_1−xMg_xZr₂O_7−x/2 ceramics reaches the highest value of 2.72 × 10⁻³ S cm⁻¹ at 1173 K for the SmYb_0.85Mg_0.15Zr₂O_6.925 ceramic.     

Role of vanadium sites in NO and O2 adsorption processes over VOx/CeO2-ZrO2 catalysts – EPR and IR studies

The interaction of NO and O₂ with 5 mol.% of vanadia deposited on Ce_0.10Zr_0.90O₂ and Ce_0.69Zr_0.31O₂ supports by wet impregnation was studied by means of EPR and IR. The supports were structurally characterized by XRD and Raman spectroscopy. Influence of the phase composition of the support on vanadium speciation as well as on surface architecture of the oxovanadium entities was discussed. The NO forms adsorbed on vanadium-containing systems were compared to those observed on bare CeO₂-ZrO₂ supports. The main products appearing on the catalysts surface during the consecutive reaction with NO and O₂ were identified and their thermal evolution was observed. Changes in vanadium speciation accompanying redox processes related to NO and O₂ activation were also observed and discussed.