Doped-vanadium oxides as sensing materials for high temperature operative selective ammonia gas sensors

Resistive electrochemical sensors based on vanadium oxides equipped with a pair of interdigital Au electrodes can detect NH₃ gas selectively at high temperature (500 °C). NH₃ addition in a base gas increased the relative conductance (σ/σ₀). Addition of less electronegative cation (Ce, Zr, Mg) to V₂O₅ increased the response and recovery rates, while electronegative cation (Al, Fe, Ni) increased sensor response magnitude. Among the samples tested, Al and Ce co-doped sample (VAlCe) was the most suitable sensor. The VAlCe sensor responded rapidly and linearly to change in concentration of NH₃ in the oxygen rich gas mixture and showed high selectivity in the presence of coexisting gases (NO, CO, H₂). The presence of water vapor did not markedly decrease the response magnitude but increased the response rate; the 90% response and 50% recovery times were less than 15 s. Based on the in situ UV–vis results, a possible sensing mechanism is proposed; adsorbed NH₃ causes reduction of V⁵⁺ to V⁴⁺, which results in the conductivity increase. Role of surface acidity on the selective detection of NH₃ as a basic molecule is also discussed.     

Fluctuation-enhanced scent sensing using a single gas sensor

Scent or aroma sensing during aromatherapy can be carried out by applying only a single resistance gas sensor (TGS - Taguchi Gas Sensors). This paper considers the efficiency of detection of essential oils by DC resistance and its fluctuations observed in TGS sensors. A detailed study has been conducted for scents emitted by five popular essential oils using three sensor types (TGS 2600, TGS 2602, TGS 823). The research was focused on the practical use in aromatherapy to assure the same intensity of scents which are sprayed by a glass nebulizer. The prepared system for scent emission and control of its intensity was presented as well.     

光纤光栅温度应力同时区分测量技术的新进展

从不同角度归纳了光纤光栅传感器区分测量温度及应力的最新技术方案,叙述其主要工作原理,给出图示说明,并对各种方案的适用场合及优缺点进行了比较分析,最后,指出了现有方案的不足。     

基于喷墨打印的可实现敏感材料原位沉积和高温检测的柔性丙酮气体传感器

通过离子交换技术对衬底表面改性,然后喷墨打印掩膜图形,在聚酰亚胺衬底两面分别制备了银叉指电极和加热电阻.通过调节电阻加热器两端的直流偏压,实现25 ℃~280 ℃的控温加热.集成的加热器具有双重功能:纳米ZnO敏感薄膜原位沉积和高温检测.结果表明,该传感器对丙酮气体的灵敏度随温度单调增加(<150 ℃).此外,加热器促进了ZnO敏感薄膜表面丙酮气体分子的解吸,缩短了传感器响应和恢复时间,并减小了初始电阻的漂移.此外,在丙酮检测中,加热器能有效地减少湿度干扰.     

Examination of Au/SnO2 core-shell architecture nanoparticle for low temperature gas sensing applications

Au/SnO₂ core-shell structure nanoparticles (NPs) were synthesized using two methods, microwave and conventional precipitation. In both cases, the size of the Au core was 12-18 nm and the thickness of the SnO₂ shell was 8-12 nm. The particle size of SnO₂ synthesized using the microwave and precipitation method was 3-5 nm and 1-2 nm, respectively. Upon heating to 400-600 °C, both particles maintained their core-shell morphology but the smaller SnO₂ particles prepared using the precipitation method were more sintered. The resistance changes in films of these particles were measured as a function of CO concentration. The Au/SnO₂ particles prepared using the microwave method showed higher sensor response than those prepared using the precipitation method, even providing a significant signal at testing temperatures approaching ambient conditions, thereby affording a new class of material for gas sensing. Both sets of core-shell particles showed higher sensor response than the SnO₂ nanoparticles. The role of the Au core as a catalyst in improving the adsorption and oxidation of CO gas is important for improving the low temperature response. In addition, the maintenance of the size of SnO₂ in the microwave method during sintering contributed to the higher response towards CO sensing.     

Low‐temperature fabrication of 5‐in. QVGA flexible AMOLED display driven by OTFTs using olefin polymer as the gate insulator

Abstract— A 5‐in. QVGA flexible AMOLED display driven by OTFTs has been fabricated at a low temperature of 130°C. A polyethylene naphthalate film was used as the flexible substrate and an olefin polymer was used as the gate insulator for the OTFT. This layer was formed by spin‐coating and baking at 130°C. Pentacene was used as the organic semiconductor layer. The OTFT performance to drive the flexible display with QVGA pixels in terms of current on/off ratio, carrier mobility, and spatial uniformity on the backplane have been obtained. Phosphorescent and fluorescent OLEDs were used as light‐emitting devices on a flexible display. Those layers were formed by vacuum deposition. After the flexible display was fabricated, a clear and uniform moving image was obtained on the display. The display also showed a stable moving image even when it was bent.