7.1 GHz bandwidth monolithically integratedIn0.53Ga0.47As/In0.52Al0.48As PIN-HBT transimpedance photoreceiver

A monolithically integrated photoreceiver using an InAlAs/InGaAs HBT-based transimpedance amplifier has been fabricated and characterized. The p-i-n photodiode is implemented using the base-collector junction of the HBT. The 5 μm×5 μm emitter area transistors have self-aligned base metal and non-alloyed Ti/Pt/Au contacts. Discrete transistors demonstrated f_T and f_max of 54 GHz and 51 GHz, respectively. The amplifier demonstrated a -3 dB transimpedance bandwidth of 10 GHz and a gain of 40 dBΩ. The integrated photoreceiver with a 10 μm×10 μm p-i-n photodiode showed a -3 dB bandwidth of 7.1 GHz     

An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver

A monolithically integrated 1-Gb/s p-i-n/HBT transimpedance photoreceiver is discussed. The optoelectronic integrated circuit (OEIC) was made from metalorganic vapor-phase epitaxy (MOVPE)-grown InP/InGaAs heterostructures and had a transimpedance of 1375 Ω, a sensitivity of -26.1 dBm, >25-dB dynamic range, and a 500-MHz bandwidth     

A 3 GHz transimpedance OEIC receiver for 1.3-1.55 μm fiber-opticsystems

A high-performance metal-semiconductor-metal high-electron-mobility transistor (MSM-HEMT) transimpedance photoreceiver fabricated using OMCVD-grown InAlAs/InGaAs heterostructures on an InP substrate is discussed. This is the first demonstration of a monolithically integrated receiver amplifier that incorporates a cascode amplifier stage and a Schottky diode level-shifting stage implemented on InP-based optoelectronic integrated circuit (OEIC) photoreceivers. The transimpedance amplifier has an open-loop gain of 5.7 and a bandwidth of 3.0 GHz, which represent the highest gain and the highest speed performance reported for 1.3-1.55-μm-wavelength OEIC receivers     

Monolithically integrated multichannel SiGe/Si p-i-n-HBTphotoreceiver arrays

A low-power, short-wavelength eight-channel monolithically integrated photoreceiver array, based on SiGe/Si heterojunction bipolar transistors, is demonstrated. The photoreceiver consists of a photodiode, three-stage transimpedance amplifier, and passive elements for feedback, biasing and impedance matching. The photodiode and transistors are grown by molecular beam epitaxy in a single step. The p-i-n photodiode exhibits a responsivity of 0.3A/W and a bandwidth of 0.8 GHz at λ=0.88 μm. The three-stage transimpedance amplifier demonstrates a transimpedance gain of 43 dBΩ and a -3 dB bandwidth of 5.5 GHz. A single channel monolithically integrated photoreceiver consumes a power of 6 mW and demonstrates an optical bandwidth of 0.8 GHz. Eight-channel photoreceiver arrays are designed for massively parallel applications where low power dissipation and low crosstalk are required. The array is on a 250-μm pitch and can be easily scaled to much higher density. Large signal operation up to 1 Gb/s is achieved with crosstalk less than -26 dB. A scheme for time-to-space division multiplexing is proposed and demonstrated with the photoreceiver array     

A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBTphotoreceiver module for long-wavelength transmission systems

A very high sensitivity, high speed, fiber-pigtailed photoreceiver module is described. The OEIC photoreceiver, composed of a p-i-n photodetector monolithically integrated with an InP-InGaAs heterojunction bipolar transistor (HBT)-based transimpedance amplifier, has measured sensitivity of -20 dBm and -17.6 dBm for data rates of 10 and 12 Gb/s, respectively, at a bit error rate of 1×10^-9. These results are the best ever reported for an OEIC photoreceiver at these speeds. In an optical transmission experiment with a low noise erbium-doped fiber amplifier (EDFA) preceding the OEIC photoreceiver, the measured sensitivities were -35.2 and -32 dBm at 10 and 12 Gb/s respectively     

27-GHz bandwidth high-speed monolithic integrated optoelectronicphotoreceiver consisting of a waveguide fed photodiode and anInAlAs/InGaAs-HFET traveling wave amplifier

A monolithic integrated photoreceiver for 1.55-μm wavelength has been designed for operation in a 20-Gb/s synchronous digital hierarchy system (SDH/SONET), based on a new integration concept. The optoelectronic integrated circuit (OEIC) receiver combines a waveguide-integrated PIN-photodiode and a traveling wave amplifier in coplanar waveguide layout with four InAlAs/InGaAs/InP-HFETs (0.7-μm gate length). The receiver demonstrates a bandwidth of 27 GHz with a low frequency transimpedance of 40 dBΩ. This is, to our knowledge, the highest bandwidth ever reported for a monolithic integrated photoreceiver on InP. Furthermore, a receiver sensitivity of -12 dBm in the fiber (20 Gb/s, BER=10^-9) and an overall optical input dynamic range of 27 dB is achieved. Optical time domain multiplex (TDM) system experiments of the receiver packaged in a module show an excellently shaped eye pattern for 20 Gb/s and an overall sensitivity of -30.5 dBm (BER=10^-9) [including erbium doped fiber amplifiers (EDFA)]     

InP基长波长单片集成光接收前端的设计和制备

叙述了利用InP基长波长pin光探测器和异质结双极晶体管(HBT)单片集成实现光接收前端的设计和制备方法.pin光探测器和HBT采用共享层结构,这样的结构不仅性能优于堆叠层结构,而且制备工艺兼容.制备的HBT截止频率达到30GHz,pin光探测器的3dB带宽达到了15GHz,集成光接收前端的3dB带宽达到3GHz,跨阻放大倍数达到800.     

37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55-/spl mu/m wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dB/spl middot//spl Omega/. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC.     

InP-InGaAs single HBT technology for photoreceiver OEIC's at 40Gb/s and beyond

We describe an advanced InP-InGaAs-based technology for the monolithic integration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure. Employing this technology, we have designed and fabricated two photoreceivers achieving transimpedance gains of 170 Ω/380 Ω and optical/electrical bandwidths of 50 GHz/34 GHz. To the best of our knowledge, this is the highest bandwidth of any heterojunction bipolar transistor (HBT)-based photoreceiver optoelectronic integrated circuit (OEIC) published to date. We even predict a bandwidth of 60 GHz for the same circuit topology by a simple reduction of the photodiode diameter and an adjustment of the feedback resistor value     

A monolithic 5 Gb/s p-i-n/HBT integrated photoreceiver circuit realized from chemical beam epitaxial material

The authors report on a high performance monolithic photoreceiver fabricated from chemical beam epitaxy (CBE) grown InP/InGaAs heterostructures, incorporating a p-i-n photodetector followed by a transimpedance preamplifier circuit configured from heterojunction bipolar transistors (HBTs). The optoelectronic integrated circuit (OEIC) was fabricated on a semi-insulating Fe-doped InP substrate. Microwave on-wafer measurements of the frequency response of the transistors yielded unity current gain cutoff frequencies of 32 GHz and maximum oscillation frequencies of 28 GHz for collector currents between 2 and 5 mA. The photoreceiver was operated up to 5 Gb/s, at which bit rate a sensitivity of -18.8 dBm was measured at a wavelength of 1.5 mu m. The results demonstrate that the CBE growth technique is suitable for high performance HBT-based OEICs.<>     

Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology

The epitaxial structure and growth, circuit design, fabrication process and characterization are described for the photoreceiver opto-electronic integrated circuit (OEIC) based on the InP/lnGaAs HBT/PIN photodetector integration scheme. A 1.55 μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/lnGaAs heterojunction bipolar transistor (HBT) process. The InP/lnGaAs HBT with a 2 μm × 8 μm emitter showed a DC gain of 40, a DC gain cutoff frequency of 45 GHz and a maximum frequency of oscillation of 54 GHz. The integrated InGaAs photodetector exhibited a responsivity of 0.45 AAV at λ = 1.55 μm, a dark current less than 10 nA at a bias of -5 V and a -3 dB bandwidth of 10.6 GHz. Clear and opening eye diagrams were obtained for an NRZ 223-l pseudorandom code at both 2.5 and 3.0 Gbit/s. The sensitivity for a bit error ratio of 10-9 at 2.5 Gbit/s is less than -15.2 dBm.     

40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology

An optoelectronic integrated circuit operating in the 1.55-/spl mu/m wavelength range was realized on GaAs substrate through metamorphic technology. High indium content layers, metamorphically grown on a GaAs substrate, were used to fabricate the optoelectronic integrated circuits (OEICs) with -3 dB bandwidth of 40 GHz and 210 V/W of calculated responsivity. The analog OEIC photoreceiver consists of a 12-/spl mu/m, top-illuminated p-i-n photodiode, and a traveling wave amplifier (TWA). This receiver shows 6 GHz wider bandwidth than a hybrid photoreceiver, which was built using comparable, but stand-alone metamorphic p-i-n diode and TWA. With the addition of a buffer amplifier, the OEIC shows 7 dB more gain than the hybrid counterpart. To our knowledge, this is the first 40 Gbit/s OEIC achieved on a GaAs substrate operating at 1.55 /spl mu/m.     

Modulator driver and photoreceiver for 20 Gb/s optic-fiber links

Two integrated circuits, a modulator driver and a photoreceiver integrating a metal-semiconductor-metal (MSM) photodetector, a differential transimpedance amplifier and two limiting amplifier stages for high-speed optical-fiber links are presented. The IC's were manufactured in a 0.2 μm gate-length AlGaAs-GaAs high-electron mobility transistor (HEMT) technology with a f_T of 60 GHz. The modulator driver IC operates up to 25 Gb/s with an output voltage swing of 3.3 V_p-p at each output. The 1.3-1.55 μm wavelength monolithically integrated photoreceiver optoelectronic integrated circuit (OEIC) has a bandwidth of 17 GHz with a high transimpedance gain of 12 kΩ. Eye diagrams are demonstrated at 20 Gb/s with an output voltage of 1 V_p.p     

Monolithic balanced p-i-n/HBT photoreceiver for coherent optical heterodyne communications

Two InGaAs p-i-n photodetectors connected in a balanced configuration have been monolithically integrated with a transimpedance preamplifier made from InP-InGaAs heterojunction bipolar transistors (HBTs) to realize a balanced optoelectronic integrated circuit (OEIC) receiver. The receiver, with a bandwidth of 3 GHz and a common mode rejection of 25 dB, has a sensitivity of -49 dBm at a bit error rate of 10/sup 9/ under NRZ FSK reception at 200 Mb/s.<>     

A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors

Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350 Omega . In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of -15.5 dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.53 mu m. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.<>     

DC to 2.5 Gb/s×4 p-i-n/HBT optical receiver array with lowcrosstalk

A multichannel optical receiver with an In_0.53Ga_0.47As p-i-n photodetector array and a monolithic transimpedance amplifier array fabricated in AlGaAs/GaAs HBT (heterojunction bipolar transistor) technology were demonstrated. Both flip-chip rear-illuminated and wire-bonded front-illuminated detector configurations were implemented. The transimpedance was 65 dBΩ, and the 3-dB bandwidth was measured to be 2.3 GHz. By using series feedback, the transimpedance gain of each cell was matched to within 0.5 dB, and the entire array operated from a single 5-V supply. A low interchannel crosstalk of less than -40 dB was measured up to a data rate of 2 Gb/s     

Fabrication of Transimpedance Amplifier Module and Post‐Amplifier Module for 40 Gb/s Optical Communication Systems

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut‐off frequency (f_T) of 129 GHz and a maximum oscillation frequency (f_max) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 dBΩ. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post‐amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.     

Monolithically integrated InP-based front-end photoreceivers

The performance characteristics of a monolithically integrated front-end photoreceiver, consisting of a photodiode and a MODFET amplifier, were analyzed and measured. A vertical scheme of integration was initially used to realize a photoreceiver circuit on InP consisting of an InGaAs p-i-n diode, an InGaAs/InAlAs pseudomorphic MODFET, and passive circuit elements. The device structures were grown by single-step molecular beam epitaxy with an isolating layer in between. The microwave performance of 1-μm-gate MODFETs in the circuit is characterized by f_T=9 GHz, although identical discrete devices have f_T=30-35 GHz. The degradation is due to additional parasitic capacitances present in this integration scheme. In spite of this disadvantage the bandwidth of the circuit is 2.1 GHz. Integration of the p-i-n diode with 1.0- and 0.25-μm-gate MODFETs has also been done in a planar scheme using regrowth, and receiver bandwidths of 6.5 GHz were measured. This value is comparable to that of hybrid circuits with InP-based devices     

A monolithically integrated photoreceiver compatible withInP/InGaAs HBT fabrication process

We demonstrate, for the first time, the characteristics of an InP/InGaAs HBT-compatible pin-PD and a monolithically integrated pin/HBT photoreceiver. The pin-PD can produce a short pulse with an FWHM of 80.8 ps followed by an elongated tail, when illuminated by optical pulses with an FWHM of 40 ps and a wavelength of 1.3 μm. The fall time of the output is determined by the transit time of holes generated in the n ⁺-InGaAs layer. The monolithically integrated photoreceiver, consisting of the pin-PD and a transimpedance preamplifier, can operate at 2.5 Gb/s with a sensitivity of -9.8 dBm. This performance was mainly limited by the characteristics of the pin-PD     

11 GHz ultrawide-bandwidth monolithic photoreceiver using InGaAspin PD and InAlAs/InGaAs HEMTs

A very-wide-bandwidth long-wavelength monolithically integrated photoreceiver is presented which comprises an InGaAs pin PD and a transimpedance amplifier. The receiver uses epilayers grown by one-step MOVPE. The InGaAs channel high-electron-mobility field effect transistor (HEMT) employs an Si planar-doped carrier supplying layer to obtain larger transconductance and uniform threshold voltage. The 0.5 μm gate length is used for HEMTs to enhance the speed of operation. This receiver shows a very wide bandwidth of 11 GHz, and opened eye for a 15 Gbit/s NRZ signal. This is the first demonstration of a long-wavelength monolithic photoreceiver receiving a 15 Gbit/s light signal