高能重离子辐照制备SiOC复合材料的研究

用120 kev碳离子注入非晶SiO2薄膜,再用高能Xe、Pb和U离子辐照.注碳剂量范围为2.0×1017-8.6×1017 cm-2,高能离子辐照剂量1.0×1010-3.8×1012 cm-2.辐照后的样品用傅里叶变换红外光谱仪进行系统分析.实验结果显示,高能离子辐照在注碳非晶SiO2薄膜中形成了大量的Si-O-C键和Si-C键.这些Si-O-C结构具有环链、开链和笼链等多种结构形式.随电子能损、辐照剂量或者沉积能量密度的增加,SiOC结构由类笼向环/开链结构演化.对高能重离子驱动产生SiOC结构的机理进行了简单的讨论.     

高能重离子辐照制备碳氮化合物材料研究

室温下,先用100-120 keV的N离子注入类金刚石薄膜和石墨中,注入剂量5×1017至5×1018 cm-2,再用高能Xe、U、C60离子分别辐照注氮后的样品,然后用显微FTIR和Raman、XRD/XPS等手段进行分析表征,研究了实验样品中由辐照引起的新化学键和新相的产生.实验结果显示,高能重离子辐照可在所有样品中产生大量的CN键,高N浓度和大密度能量沉积导致sp3/sp2键比率的增加以及形成α-和β-C3N4必需的N-sp3C键的量的增加.C60离子辐照在注氮石墨样品中引起了ta-C、N=sp2C和N-sp3C键的形成;而高能离子辐照在注氮类金刚石薄膜样品中产生了α-和β-C3N4晶态夹杂物,其尺寸在1.4-3.6 nm之间.     

氩离子注入模拟太阳风对月岩的作用

对玄武岩和斜长岩等多种岩石样品进行了低能、超高剂量氩离子注入。氩离子能量12 0keV ,注入剂量 5× 10 18 cm2 。用X射线荧光光谱仪分析了辐照样品和未辐照样品的表面元素组成 ;用分步加热法分析了注入气体释放模式及岩石对氩气的保留能力。初步探讨了岩石对氩气的保留能力和分步加热释气模式等问题     

离子注入C60薄膜的电导率变化

沉积在云母片上的纯Ｃ６０薄膜受２０ｋｅＶ的Ｌｉ＋和Ｎ＋２离子轰击，剂量在０．５×１０１６／ｃｍ２～５．０×１０１６／ｃｍ２之间改变，测量了离子注入后Ｃ６０薄膜方块电阻随温度的变化，进而推导出Ｃ６０薄膜电导率随温度和注入离子剂量的变化；分析了非原位测量中氧元素对电导率变化的影响以及能量较高的注入离子对Ｃ６０薄膜的辐照损伤效应。研究结果表明，Ｌｉ＋注入对Ｃ６０薄膜电导率的影响明显高于Ｎ＋２注入的影响，并给出了不同离子注入条件下Ｃ６０薄膜电导率随温度变化的函数关系式。     

C注入GaN光致发光和微区拉曼散射的研究

使用光致发光谱和微区拉曼散射谱的测量,研究了C离子注入原生无黄光发射的GaN。C离子的注入剂量范围为1013-1017cm-2。发光谱的研究表明,C注入的GaN经950℃高温退火后出现了黄光发射,而近带边发射峰的峰位则由于C注入产生的某种缺陷而发生了蓝移。拉曼谱的测量表明,GaN薄膜的应力不随C注入而改变。当注入剂量增加至1015cm-2时,出现了与无序激活拉曼散射相关的300cm-1峰,但随着注入剂量进一步增加,300cm-1峰减弱并未消失,这被归因于注入束流强度随注入剂量增大。     

Ag离子注入ZnO薄膜对其发光性质的影响

采用磁控溅射技术在蓝宝石基底上制备了Zn O薄膜,并对样品在氧气氛下进行了热处理,然后采用不同能量、剂量的Ag离子注入Zn O薄膜中,形成Ag纳米颗粒。利用X射线衍射、光致发光、紫外可见吸收等技术详细地研究了样品的结构与发光性质。结果表明,未注入的Zn O薄膜在380 nm和610 nm处出现发光峰,分别对应Zn O激子峰与深能级缺陷峰。Ag离子注入Zn O样品的激子发光峰增强,并在400 nm和430 nm左右处出现新发光峰,同时深能级缺陷引起的发光峰减弱。在N2气氛下退火处理后,Ag离子注入Zn O样品在400 nm处的发光峰消失,430 nm左右发光峰减弱。Ag离子注入Zn O薄膜中合成了Ag纳米颗粒,观察到了Ag纳米颗粒的等离子共振效应。对Ag纳米颗粒和离子注入产生的缺陷、Zn O发光性质的影响给出了解释。     

高能离子注入对聚酚亚胺薄膜硬度的影响

报道了聚酚亚胺薄膜在高能（６５０ｋｅＶ－２ＭｅＶ）Ｂ＋、Ｃ＋和Ｃｕ＋离子注入后硬度的变化。对注入样品进行了显微硬度测量和ＸＰＳ及ＲＢＳ分析，观察了硬度与离子种类、能量及注入剂量的依赖关系。结果表明，离子注入之后薄膜样品的显微硬度值明显提高，注入离子在样品中的电子能量损失对聚合物材料改性起着关键作用。ＸＰＳ和ＲＢＳ分析显示，离子注入之后聚酰亚胺薄膜中Ｃ的含量增加，形成了以苯环结构为主的新的交联网状结构。     

高能离子注入对聚酰亚胺薄膜硬度的影响

报道了聚酰亚胺薄膜在高能（６５０ｋｅＶ－２ＭｅＶ）Ｂ＾＋、Ｃ＾＋和Ｃｕ＾＋离子注入后硬度的变化。对注入样品进行了显微硬度测量和ＸＰＳ及ＲＢＳ分析，观察了硬度与离子种类、能量及注入剂量的依赖关系。结果表明，离子注入之后薄膜样品的显微硬度值明显提高，注入离子在样品中的电子能量损失对聚合物材料改性起着关键作用。ＸＰＳ和ＲＢＳ分析显示，离子注入之后聚酰亚胺薄膜中Ｃ的含量增加，形成了以苯环结构为主的新的交联     

Mo-Re合金薄膜的辐照效应研究

使用离子注入技术,将200 keV氤离子注入到Mo-Re合金薄膜中,实现对薄膜的表面选区辐照改性.该薄膜的合金成分用X射线荧光光谱(XRF)测出.利用白光干涉表面形貌仪,测量了辐照区的溅射刻蚀深度和表面粗糙度,评价了合金成分对薄膜辐照行为的影响.结果表明适量Re的加入能够显著提高合金薄膜的抗溅射能力.     

O、C离子注入n型GaN的黄光发射研究

采用光致发光(Photoluminescencc,PL)谱的测量,研究了1012～1017cm-2的O和C两种离子注入和退火对非有意掺杂的n型GaN黄光发射(Yellow luminescence,YL)的影响,注入后的样品在流动N2的保护下进行退火,退火温度950℃,退火时间30 min.对比相同剂量下N离子注入GaN黄光发射,结果表明O、C两种离子的注入在GaN中分别引入了与黄光发射相关的不同的深能级中心,当C离子注入剂量高达1017cm-2时,能引起黄光发射的C相关的深能级中心显著增多.     

离子辐照GaAs的光致发光和拉曼散射研究

利用250 keV质子和4.5 MeV氪离子(Kr17+)辐照未掺杂GaAs,注量分别为1×10~(12)-3×10~(14) cm~(-2)和3×10~(11)-3×10~(14) cm~(-2),使用光致发光谱和拉曼散射谱分析表征。发光谱的结果表明,随着剂量增大,质子辐照后的CAs峰及其声子伴线逐渐减弱,913 nm处的复合缺陷峰则先增大后减小,此峰与材料制备时的Cu掺杂无关。Kr离子辐照后本征发光峰则完全消失。拉曼散射谱的结果表明,相比于质子辐照,Kr离子辐照后LO声子峰峰位向低频方向移动,出现非对称性展宽,晶体结构发生明显改变。质子和Kr离子辐照效应的差异是由于移位损伤相差至少三个量级造成的。最后采用多级损伤累积(Multi-step damage accumulation,MSDA)模型得到了材料内缺陷的演化过程,并很好地解释了随损伤剂量增大GaAs光学性能及晶体结构的变化趋势。     

A new detection method in studying penetration depth of low－energy heavy ions in botanic samples

1 INTRODUCTIONLow-energy heavy ion imPlantation has fOund its new application in crop breedingin recent years. It has been reported that the imPlantation of 20ro300 keV N+ ions intodry plant seeds such as rice and wheat in the dose ral1ge of 1015-1017 ions/cm' producedsignilicant inheritable mutation effe.t,[1]. The mutation effects axe guessed to be inducedby the direct interaction between energetic imPlanted ions and the DNA molecules in theembryo of seeds. However, based on the LS…     

Investigations on the effect of 100 MeV Ni ions irradiated chloride vapour phase epitaxy (Cl-VPE) grown GaN epilayers

Gallium nitride (GaN) epilayers have been grown by chloride vapour phase epitaxy (Cl-VPE) technique and the grown GaN layers were irradiated with 100 MeV Ni ions at the fluences of 5 × 10¹² and 2 × 10¹³ ions/cm². The pristine and 100 MeV Ni ions irradiated GaN samples were characterized using X-ray diffraction (XRD), UV-visible transmittance spectrum, photoluminescence (PL) and atomic force microscopy (AFM) analysis. XRD results indicate the presence of gallium oxide phases after Ni ion irradiation, increase in the FWHM and decrease in the intensity of the GaN (0 0 0 2) peak with increasing ion fluences. The UV-visible transmittance spectrum and PL measurements show decrease in the band gap value after irradiation. AFM images show the nanocluster formation upon irradiation and the roughness value of GaN increases with increasing ion fluences.     

Color center formation in silica glass induced by high energy Fe and Xe ions

Silica glass samples were implanted with 1.157 GeV ⁵⁶Fe and 1.755 GeV ¹³⁶Xe ions to fluences range from 1 × 10¹¹ to 3.8 × 10¹² ions/cm². Virgin and irradiated samples were investigated by ultraviolet (UV) absorption from 3 to 6.4 eV and photoluminescence (PL) spectroscopy. The UV absorption investigation reveals the presence of various color centers (E′ center, non-bridging oxygen hole center (NBOHC) and ODC(II)) appearing in the irradiated samples. It is found that the concentration of all color centers increase with the increase of fluence and tend to saturation at high fluence. Furthermore the concentration of E′ center and that of NBOHC is approximately equal and both scale better with the energy deposition through processes of electronic stopping, indicating that E′ center and NBOHC are mainly produced simultaneously from the scission of strained Si-O-Si bond by electronic excitation effects in heavy ion irradiated silica glass. The PL measurement shows three emissions peaked at about 4.28 eV (α band), 3.2 eV (β band) and 2.67 eV (γ band) when excited at 5 eV. The intensities of α and γ bands increase with the increase of fluence and tend to saturation at high fluence. The intensity of β band is at its maximum in virgin silica glass and it is reduced on increasing the ions fluence. It is further confirmed that nuclear energy loss processes determine the production of α and γ bands and electronic energy loss processes determine the bleaching of β band in heavy ion irradiated silica glass.     

Dynamic annealing study of SiC epilayers implanted with Ni ions at different temperatures

SiC epilayers grown on 4H-SiC single crystals were implanted with 850 keV Ni⁺ ions with fluences in the 0.5-9 × 10¹⁶ Ni⁺/cm² range. Most of the samples were implanted at 450 °C, but for comparison some implantations were performed at room temperature (RT). In addition, a post-implantation annealing was performed in N₂ at 1100 °C in order to recover the implantation-induced structural damage. The disorder produced by the implantation at 450 °C and the effect of the post-implantation annealing on the recrystallization of the substrates have been studied as a function of the fluence by Backscattering Spectrometry in channeling geometry (BS/C) with a 3.45 MeV He²⁺ beam. RT as-implanted samples showed a completely amorphous region which extends until the surface when irradiated with the highest dose, whereas in the case of 450 °C implantation amorphization does not occur. In general, partial recovery of the crystal lattice quality was found for the less damaged samples, and the dynamic recovery of the crystalline structure increases with the irradiation temperature.     

Blistering and flaking of amorphous alloys bombarded with He ions

The blistering and flaking behavior of many kinds of amorphous alloys under helium ion bombardment at room temperature was investigated.Helium ions with energies of 40keV and 60keV were implanted within the fluence range (1.0-4.0)013310^18ions/cm^2.The surface topography of samples after irradiation was observed by using a scanning electron microscope.The diameter of blister and the thickness of exfoliated blister lids were measured.The results showed that many kinds of surface topography characteristics appeared for different fluences,energies and amorphous alloys,such as flaking,blistering,exfoliation,blister rupture,secondgeneration blistering and porous structure.The dependence of surface damage modes and the critical fluence for the onset of blistering and flaking on the sort of materials and ion energy was discussed.     

Energy and flux measurements of laser-induced silver plasma ions by using Faraday cup

Silver(Ag)plasma has been generated by employing Nd∶YAG laser(532 nm,6 ns)laser irradiation.The energy and flux of ions have been evaluated by using Faraday cup(FC)using time of flight(TOF)measurements.The dual peak signals of fast and slow Ag plasma ions have been identified.Both energy and flux of fast and slow ions tend to increase with increasing irradiance from 7 GW cm-2 to 17.9 GW cm-2 at all distances of FC from the target surface.Similarly a decreasing trend of energies and flux of ions has been observed with increasing distance of FC from the target.The maximum value of flux of the fast component is 21.2×1010cm-2,whereas for slow ions the maximum energy and flux values are 8.8 keV,8.2×1012 cm-2 respectively.For the analysis of plume expansion dynamics,the angular distribution of ion flux measurement has also been performed.The overall analysis of both spatial and angular distributions of Ag ions revealed that the maximum flux of Ag plasma ions has been observed at an optimal angle of～15°.In order to confirm the ion acceleration by ambipolar field,the self-generated electric field(SGEF)measurements have also been performed by electric probe;these SGEF measurements tend to increase by increasing laser irradiance.The maximum value of 232 V m-1 has been obtained at a maximum laser irradiance of 17.9 GW cm-2.     

Energy of secondary ions desorbed from insulating films by MeV heavy ions as a function of projectile velocity

The influence of projectile velocity on the axial energy distribution and mean axial energy of secondary ions was measured with a double-field time-of-flight method at the GSI accelerator-system. The secondary ions were ejected from thin layers ( ~ 150 nm) of CsI, MgO, CaF2, valine and phenylalanine irradiated with Sn and U projectiles.The mean energy of ions like Cs⁺ and Mg⁺ clearly increases in the velocity range from 0.3 to 1.5 cm/ns, whereas the energy of cluster ions remains almost constant. In most cases an influence of the cluster size on the mean ion energy was not observed. The results are discussed in relevance to desorption models and their significance for the optimum design of time-of-flight mass spectrometers.     

环氧有机硅阳离子光聚合引发体系的增感研究

研究了裂解型和夺氢型自由基光引发剂种类及用量对脂环族环氧官能化聚有机硅氧烷预聚物(CEPS)阳离子光聚合中二芳基碘鎓盐SR—1012引发体系增感作用的影响。结果表明，自由基型光引发剂对SR—1012有很好的增感作用，增感后的体系感应可达112．2mJ／cm^2。自由基光引发剂与SR—1012的最佳配比为不超过1：2(重量比)。