ACRT—B法晶体生长过程的传质模型

基于对ＡＣＲＴ－Ｂ法晶体生长对时流及传质特性的认识，提出了ＡＣＲＴ－Ｂ法晶体生长过程的一维传质模型。得到了包括初始过渡区、稳态区及终端过渡区轴向成分分布的解析解。定量计算结果表明，与传统Ｂｒｉｄｇｍａｎ法相比，在生长参数不变的条件下，运用ＡＣＲＴ会失去部分轴向面分均匀区。在保护ＡＣＲＴ提高结晶及径向成分均匀性的前提下，适当提高生长速度，选择尽可能小的坩埚最大转速△ωｍａｘ或选用长径比更大的坩埚，是     

垂直布里奇曼法CdZnTe晶体生长过程的数值分析

模拟计算了半导体材料CdZnTe布里奇曼法单晶体生长过程，分析了熔体的过热温度、坩埚侧面强化换热以及坩埚加速旋转(ACRT)等因素对结晶界面的形态和晶体组分偏析的影响。结果表明：当熔体的过热温度减小时，熔体中自然对流的强度显著降低，固液界面的凹陷深度有所增加，晶体的轴向等浓度区显著加长，而晶体组分的径向偏析明显增大，坩埚的侧面强化换热增加了自然对流强度，也增大了固液界面的凹陷，但是对溶质成分的偏析影响较小，坩埚加速旋转引起的强迫对流强度远大于自然对流，显著增大了固液界面的凹陷，使熔体中的溶质分布成为均一的浓度场，显著减小了晶体组分的径向偏析，增加了晶体组分的轴向偏析。     

温度梯度溶液法生长的Cr掺杂的ZnTe晶体的表征

以CrTe作为掺杂源、以Te作为溶剂, 用温度梯度溶液法生长了Cr掺杂的ZnTe晶锭。晶锭头部的晶粒尺寸较大(>10 mm×10 mm), 且Te夹杂相较少。Te夹杂相的大小、形状和分布可以反映晶锭中的温场分布。晶锭的径向非对称温场导致富Te相沿径向非对称分布。Te夹杂相在温度梯度作用下的热迁移会导致其相互融合长大、变长。Te夹杂相也会在晶体中引入裂纹和空洞等缺陷。部分未被掺入ZnTe中的CrTe富集于固液界面处, 表明温度梯度溶液法生长晶体时具有一定的排杂作用。Cr掺杂的ZnTe晶体的电阻率(约1000 Ω·cm)高于未掺杂的ZnTe(约300 Ω·cm)。Cr掺杂晶体在约1750 nm处的吸收峰表明Cr²⁺离子被成功地掺入了ZnTe中。但是Cr掺杂后晶体的红外透过率降低, 表明Cr掺杂引入了较多的缺陷。     

Bridgman法生长的MnxCd1-xIn2Te4晶体相形成规律和物理性能研究

采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物MnxCd1-xIn2Te4晶体.研究了三根晶体中相的形貌、结构、成分和Mn0.1Cd0.9In2Te4晶体中各组元沿轴向和径向的成分分布.晶体生长初始端的组织为α+β+β1,随着生长的进行,形成β相的单相区.在晶锭末端,形成In2Te3类面心立方结构化合物.组分x增大后,MnxCd1-xIn2Te4晶体的吸收边向短波方向移动,禁带宽度则线性增大.磁化率测量结果表明:晶体在高温区的x-1-T曲线服从居里-外斯定律,在低温区(<50K)则表现出顺磁增强现象.     

HgCdTe晶体ACRT-B法生长过程的分凝特性研究

在定量估算的基础上，明确了Ｈｇ１－ｘＣｄｘＴｅ晶体ＡＣ－ＲＴ－Ｂ法生长过程轴向溶质再分配的 经条件，导出了计算公式。以ＨｇＴｅ－ＣｄＴｅ伪二元相图为基础进行了计算表明，按照远红外控制器要求的成分配料（ｘ０＝０．２２），仅在晶锭的某一部分可获得符合成分容差的晶体，而采用其它相近的成分配比也能获得符合成分要求的晶体，采用ｘ０值更小的槽糕成分获得的满足成分要求的晶段更长，并且位于结晶质量较高的晶锭前段‘     

Cd0.9Mn0.1Te晶体生长及其缺陷分析

采用Bridgman法和ACRT-B法生长了两根Cd0.9Mn0.1Te晶锭(简称CMT-B和CMT-A).采用光学金相显微镜和扫描电镜研究了这两种方法生长的晶体中出现的各种缺陷,并分析了其形成机理.采用JEOL-733电子探针测定了两根晶锭中Mn的分布.对比CMT-B和CMT-A两根晶锭,发现ACRT所产生的对流可提高Cd0.9Mn0.1Te晶体的结晶质量.     

轴向磁场下分离结晶熔体内热毛细对流的数值模拟

为研究轴向磁场对分离结晶Bridgman法生长CdZnTe晶体熔体热毛细对流的影响,采用有限差分法进行了三维数值模拟。结果表明轴向磁场能有效抑制熔体内的热毛细对流;轴向磁场对熔体内部温度分布也有较大的影响,能使等温线分布变得平缓;当磁场强度不变时,随着狭缝宽度的增大熔体内部的流动减弱。     

超重力下Pb—Sn合金定向凝固组织和形态

采用臂长为１．３ｍ的离心机实现１、５、１０和１５克四个重力水平；利用Ｂｒｉｄｇｍａｎ法使Ｐｂ－Ｓｎ共晶在超重力下单向凝固发现Ｐｂ－Ｓｎ共晶生长形态因重力水平而异；１克时为挺直的片晶，５、１０克时呈胞枝状生长，１５克时又以一种挺直的片晶方式生长；共晶组织形态的差异是由于不同重力水平下浮力对流干扰特性不同所致。     

Cd0.9Mn0.1Te晶体生长及其缺陷分析

采用Bridgman法和ACRT－B法生长了两根Cd0.9Mn0.1Te晶锭（简称CMT－B和CMT－A）。采用光学金相显微镜和扫描电镜研究了这两种方法生长的晶体中出现的各种缺陷,并分析了其形成机理。采用JEOL－733电子探针测定了两根晶锭中Mn的分布。对比CMT－B和CMT－A两根晶锭,发现ACRT所产生的对流可提高Cd0.9Mn0.1Te晶体的结晶质量。     

Bridgman法生长的MnxCd1-xIn2Te4晶体相形成规律和物理性能研究

采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物Mn_xCd_1-xIn₂Te₄晶体.研究了三根晶体中相的形貌、结构、成分和Mn_0.1Cd_0.9In₂Te₄晶体中各组元沿轴向和径向的成分分布.晶体生长初始端的组织为α+β+β₁,随着生长的进行,形成β相的单相区.在晶锭末端,形成In₂Te₃类面心立方结构化合物.组分x增大后,Mn_xCd_1-xIn₂Te₄晶体的吸收边向短波方向移动,禁带宽度则线性增大.磁化率测量结果表明:晶体在高温区的x^-1-T曲线服从居里-外斯定律,在低温区(<50K)则表现出顺磁增强现象.     

CdTe单晶生长过程的分凝特性及其生长条件的选择

在Ｃｄ－Ｔｅ相图的基础出ＣｄＴｅ－Ｃｄ相图并定义其主要参数，讨论了高Ｃｄ的ＣｄＴｅ液体在结晶过程中的分凝特性及其生长条件对昌体中Ｔｅ固溶量的影响，进而维持平面生长界面所需的最小温度梯度。     

温度梯度和生长速率对CdZnTe-VBM生长晶体的影响

计算模拟了半导体材料CdZnTe垂直布里奇曼法(CdZnTe-VBM)单晶体生长过程，分析了炉膛温度梯度和坩埚移动速率对结晶界面形态和晶体内组份偏析的影响。计算结果表明炉膛温度梯度和生长速率的变化明显影响固-液界面前沿对流场的形态和强度。界面凹陷深度随着炉膛温度梯度的增加和生长速率减小而减小。炉膛温度梯度的增加和生长速率的减小虽然均能有效的减小径向偏析，但却增加轴向偏析，减小轴向等浓度区的长度。     

Evaluation and improvement of optical-grade LiTaO3 single crystals by the LFB ultrasonic material characterization system

This paper describes the first demonstration for feeding back the results obtained by the line-focus-beam ultrasonic material characterization (LFB-UMC) system to the crystal growth conditions for optical-grade LiTaO₃ crystals and for achieving much improved homogeneity of chemical composition. We evaluated a commercially available optical-grade LiTaO₃ single crystal with a nominally congruent composition in detail, by measuring distributions of the velocities of leaky surface acoustic waves (LSAW) along the Y-axis direction for a Z-cut specimen plate prepared from the crystal grown in the Y-axis direction. We detected an increment of 0.66 m/s in LSAW velocity along the pulling axis direction corresponding to 0.024 mol% in Li₂O content, and the compositional gradient was +0.346×10^-3 (Li₂O-mol%)/mm. By experimentally obtaining the starting material composition dependence of the gradients, we developed a method of estimating the proper composition ratio that would lead to a more homogeneous crystal. We grew a new crystal with a Li₂O content of 48.47 mol%, resulting in a very small compositional gradient of +0.046×10^-3 (Li ₂O-mol%)/mm and a compositional homogeneity of less than 0.012 Li₂O-mol% in a Z-cut area of 50 mm×50 mm used for device substrates     

Computational modeling of magnetic nanoparticle targeting to stent surface under high gradient field

A multi-physics model was developed to study the delivery of magnetic nanoparticles (MNPs) to the stent-implanted region under an external magnetic field. The model is firstly validated by experimental work in literature. Then, effects of external magnetic field strength, magnetic particle size, and flow velocity on MNPs’ targeting and binding have been analyzed through a parametric study. Two new dimensionless numbers were introduced to characterize relative effects of Brownian motion, magnetic force induced particle motion, and convective blood flow on MNPs motion. It was found that larger magnetic field strength, bigger MNP size, and slower flow velocity increase the capture efficiency of MNPs. The distribution of captured MNPs on the vessel along axial and azimuthal directions was also discussed. Results showed that the MNPs density decreased exponentially along axial direction after one-dose injection while it was uniform along azimuthal direction in the whole stented region (averaged over all sections). For the beginning section of the stented region, the density ratio distribution of captured MNPs along azimuthal direction is center-symmetrical, corresponding to the center-symmetrical distribution of magnetic force in that section. Two different generation mechanisms are revealed to form four main attraction regions. These results could serve as guidelines to design a better magnetic drug delivery system.     

Bulk Bridgman growth of cadmium mercury telluride for IR applications

Cadmium mercury telluride (CMT, CD_xHg_1-xTe) is the pre-eminent infrared material, despite the difficulties associated with the production and subsequent processing of this ternary compound. By varying the x value the material can be made to cover all the important infrared (IR) ranges of interest. The first technique developed was the basic vertical Bridgman process with typical crystal dimensions of 13 mm diameter and 150 mm length. We found it necessary to purify both the mercury and the tellurium on-site before use to obtain the required electrical properties. There is marked segregation of the matrix elements in Bridgman growth that is both a disadvantage and an advantage. Its disadvantage is that the yield of material in terms of composition for the two most common regions required (x=0.21 and 0.3 for 8–14 and 3–5 m atmospheric transmission windows, respectively) is low. The advantage is that both regions of interest are produced in the same crystal. A further advantage is that segregation of impurities also occurs and leads to low background donor levels in Bridgman material. This Bridgman material is used exclusively for photoconductive IR detectors that require n-type material. The main disadvantages of the Bridgman technique are that material is non-uniform in composition in the radial direction, as well as in the growth direction, and there are numerous grain and sub-grain boundaries. An improved process was developed at BAE Systems based on the accelerated crucible rotation technique (ACRT). Here, growth ampoules are subjected to periodic acceleration/deceleration in their rotation, rather than constant rotation as in the Bridgman process. The major effect of this is to stir the melt during growth and produce flatter solid/liquid interfaces. This, in turn, improves the radial and axial compositional uniformity of the material, normally by a factor of at least ten-fold. The only drawback is that the material is now p-type as grown and must be annealed in mercury vapor to convert it to n-type. An additional marked advantage of ACRT is that the improved radial compositional uniformity enables larger diameter material to be considered. We are currently growing 20 mm diameter, 200 mm long crystals of 0.5 kg weight with acceptable uniformity of composition and good electrical properties for current photoconductive detector programs. © 2001 Kluwer Academic Publishers     

A numerical investigation of dopant segregation by modified vertical gradient freezing with moderate magnetic and weak electric fields

The paper numerically investigates melt growth of doped gallium-antimonide (GaSb) semiconductor crystals by the vertical gradient freeze (VGF) method utilizing a submerged heater. Electromagnetic (EM) stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a small radial electric current in the melt together with an axial magnetic field. The transport of any dopant by the stirring can promote better compositional homogeneity. This investigation presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a moderate axial magnetic field and a weak electric field. Numerical predictions of the dopant distributions in the crystal and in the melt at several different stages during growth are presented.     

Solute Redistribution in Directional Melting Process

1. IntroductionSolidification has been an important research fieldsince 50's with fruitful results. But, less attentionhas been paid to its reverse process, melting process,because of its limited applications. The science andtechnology progress in the last years makes the investigation on melting process not only a scientifically interesting topic, but also an ilnportallt applied researchfield with many applications, such as3 the dissolutionof refractory particles in liquid metals, the melting…