Varactor-tuned gunn diode voltage controlled oscillator antenna array

A simple varactor tuned X-band Gunn diode VCO antenna array which is strongly coupled has been demonstrated. These arrays have the advantages of simple biasing circuit, no resistors required to eliminate multimode problem and suitable for monolithic integration circuit. Preliminary results show a maximum tuning range of 47MHz for 1×1 array and 170MHz for 2×2 array. In order to solve power combining heating problem, we move the backside metal forward and it becomes a microstrip form. The measured frequency and radiation patterns of these grid arrays agree very well with theoretical calculations.     

Theoretical and experimental investigation of novel varactor-tunedswitchable microstrip ring resonator circuits

A microstrip ring resonator circuit loaded with two p-i-n diodes has been developed for use as a switchable filter. By replacing one p-i-n diode with a varactor diode, the switchable filter can be made electronically tunable. Isolation exceeding 20 dB with 9% tuning bandwidth was demonstrated. An analysis based on transmission line theory was used to model both circuits. The analysis includes the effects of diode parasitics, coupling gaps, dispersion, and mounting-gap capacitance. The experimental results agree very well with the theoretical calculation     

High-performance millimetre-wave suspended stripline Gunn VCO

A novel millimetre-wave integrated circuit Gunn voltagecontrolled oscillator (VCO) has been developed with high output power using suspended stripline. An output power of 100 to 150mW has been achieved at frequencies between 33 and 42 GHz. A varactor diode was mounted in alignment and in close proximity to the Gunn diode to achieve an electronic tuning range of 300 MHz     

A circuit technique for broadbanding the electronic tuning range of Gunn oscillators

A circuit technique is described whereby the electronic tuning range obtained by varactor tuning solid-state oscillators, such as Gunn oscillators, can be improved. The principle of the technique has been demonstrated by doubling the tuning range obtained from a coaxial X-band Gunn oscillator using distributed circuit elements. An analytical expression for the improved tuning range is presented and predictions for the improvement in an existing microstrip X-band oscillator using chip devices given.     

变容二极管调谐体效应振荡器的CAD

本文建立了一种新的 Gunn VCO 的电路模型,计算了 Gunn 管和变容二极管之间的径向盘耦合电容。首次利用谐波平衡法对 Gunn VCO 进行了非线性分析,设计并制作了一 Ka 波段混合集成 Gunn VCO,实验结果与 CAD 结果进行了比较,证明了该种电路模型与分析方法的有效性。此外利用该分析程序研究了Gunn 管和变容二极管之间的耦合与调谐带宽的关系。在分析的基础上,利用线性拟合误差函数作为 Gunn VCO 频率调谐线性度的优化目标函数,对 VCO 的频率调谐特性进行了优化,确定了此种电路在最佳线性调谐时 PN 结幂指数γ的值,从而在理论上对满足线性调谐的变容二极管提出了要求。     

A Gunn-Diode Active Leaky-Wave Frequency Scanning Antenna

A frequency tunable active leaky-wave scanning antenna using Gunn-diode voltage control oscillator (VCO) as source is developed. The frequency tuning controlled by changing either the varactor diode dc bias or the Gunn diode dc bias is demonstrated. The measured scanning angle of active antenna is close to 15 degree as the Gunn VCO frequency tuned from 12.58GHz to 12.98GHz. To excite the first higher order mode of the microstrip leaky-wave antenna is fed asymmetrically. The dominant mode excitation has been successfully suppressed by adding a sequence of covered wire in the middle line of the microstrip leaky wave antenna. This is a prototype of frequency scanning antenna using two terminal device, which can be easily scaled up to millimeter wave frequency region.     

Novel varactor-tuned millimetre-wave Gunn oscillator

A novel design of varactor-tuned millimetre-wave second-harmonic Gunn oscillator is reported in which a varactor is mounted in a secondary cavity resonant at the fundamental frequency of the Gunn diode. This has the advantage that the varactor does not significantly load the Gunn diode at the output second-harmonic frequency, and enables the oscillator to produce the maximum possible output power from the diode while still offering varactor tuning and high Q.     

Varactor Controlled Gunn Oscillator at W-Band

This paper describes the experimental circuit and measured performance of varactor tuned Gunn oscillator at W-band. The power output of 12.5 dBm has been achieved when packaged GaAs Gunn diode is used. Linear frequency excursion of 150 MHz with power variation of 1 dB has been observed when varactor was given reverse bias from 0 to 20 volts. GaAs hyperabrupt varactor is used in parallel to gunn diode at a distance of odd multiple of λg/2 in waveguide channel.     

Varactor-tuned X band Gunn oscillator using lumped thin-film circuits

The operation of a varactor-tuned oscillator using an unen-capsulated Gunn and varactor diode is described, where the associated circuit consists of lumped elements fabricated using thin-film techniques. Depending on the GaAs material, the oscillator provides output powers greater than 10 mW and a tunable 3 dB bandwidth in excess of 1 GHz. At zero varactor bias, the frequency can be set in the 7?12 GHz range. Satisfactory correlation with the theory is demonstrated.     

Experiments on injection locking of active antenna elements foractive phased arrays and spatial power combiners

Two types of active antenna elements have been studied experimentally. One type uses a microstrip antenna with an active device mounted directly on the antenna. The other uses an active device coupled to a microstrip patch antenna through an aperture. Microstrip active antenna elements and two-element arrays have been demonstrated for both types of circuits. Injection locking of the antenna elements has been achieved through space and mutual coupling. The circuit Q factor was calculated based on the locking gain and the locking bandwidth. The power output from two elements has been successfully combined in free space with a combining efficiency of over 90%. For a single active antenna with a Gunn diode mounted directly on the patch, an electronic tuning range exceeding 9% has been achieved by varying the DC bias. The results should have many applications in low-cost active arrays, active transmitters, and spatial power combiners     

Wide-Band Varactor-tuned Coaxial Oscillators

An experimental investigation into the effects of package and circuit reactances on wide-band varactor-tuned oscillators is described. The results are used to design an X-band Gunn coaxial oscillator with a tuning range in excess of 3 GHz. It is shown that the stray reactance, junction capacitance, and bond-wire inductance affect the varactor tuning characteristics. The characteristics are conveniently displayed by the reflection phase variation with tuning voltage and frequency. A general theory for wide-band varactor-tuned oscillators is presented which is related to the impedance characteristics. These results are used to design three coaxial varactor-tuned oscillators. The first two oscillators are series arrangements while the third oscillator is a parallel arrangement. A simple circuit technique is used to improve the tuning range of each arrangement. This technique is shown to increase the coupling to the varactor diode and decrease the oscillator Q by reactance compensation.     

基于螺旋电感的Wilkinson功分器设计

Wilkinson功分器是一种常用的无源器件,随着通信设备小型化的要求越来越高,无源器件的体积成为其发展瓶颈。为解决这个问题,在分析螺旋电感主要参数及等效电路基础上,提出了一种基于π型等效1/4波长传输线原理,利用集总参数元件组成等效微带线电路的集总参数方法,设计出Si沉底上的螺旋电感和片上电容来实现微波单片集成(MMIC)电路的Wil-kinson功分器。实验表明,同等性能情况下,该方法设计的Wilkinson功分器可以有效减少Wil-kinson功分器的外形尺寸。     

U-band shield suspended-stripline Gunn DRO and VCO

A millimeter-wave IC dielectric resonator oscillator (DRO) is proposed. Equations that give the resonant frequency of the dielectric resonator DR in suspended stripline (SSL) are derived. A U-band voltage-controlled oscillator (VCO) with varactor tuning also has been developed. The Gunn diode and varactor used in both of the oscillators are commercially available packaged devices. Restrictions on the performance of the oscillators imposed by packaged and mounted networks and the self-characteristics of the solid-state devices have been analyzed. An electronic tuning range greater than 1000 MHz with an output power exceeding 15 dBm across the bandwidth in the 53-GHz region has been realized for the SSL VCO. An SSL DRO with an output power of more than 17 dBm and a mechanical tuning range of 1.5 GHz in the 54-GHz region has been achieved     

Nonlinear Frequency-Modulation Distortion Analysis for VCO Based on Harmonic Balance Method

The analysis methods for the steady-state responses of the voltage tuning negative resistance oscillator (voltage-controlling oscillator, VCO) by the microwave nonlinear autonomous circuit harmonic balance method in millimeter-wave bands are studied in the paper. Firstly, the quasi-periodic characteristic of the steady-state response of the VCO modulated by a periodic signal is proved. Then, on the bases of the harmonic balance analysis and the inter-modulation balance analysis, a novel method for obtaining the steady-state tuning performance and the nonlinear frequency-modulation distortion characteristic of the VCO is presented. The total analysis process is aimed to a kind of NRD-guide Gunn diode VCO. The large-signal lumped equivalent circuit model of the millimeter-wave P⁺N-junction varactor is also given for explaining the algorithm and the principle of the NRD-guide VCO.     

Microstrip Varactor-Tuned Millimeter-Wave IMPATT Diode Oscillators

Varactor-tuned millimeter-wave IMPATT diode oscillators in microstrip form using chip-mounted diodes are described. A nearly level output power of 28 /spl plusmn/ 8 mW was achieved over a 6-GHz tuning range. Tunable bandwidths as high as 8 GHz with 6-26 mW of power were obtained from a single source. P-type epitaxial silicon IMPATT diodes were used for both the active device and the tuning varactor functions.     

An integrated wide-band varactor-tuned Gunn oscillator

A report is made of a thin-film varactor-tuned Gunn effect oscillator in X band employing unencapsulated diodes. The Gunn device, which is an inverted mesa type, is mounted off the substrate on a copper header and this arrangement can dissipate 7 W without the Gunn device suffering thermal damage. The varactor is a beam-lead silicon p⁺nn⁺IMPATT diode connected in series with the Gunn device. A circulator is integrated with the oscillator to provide load isolation, and tuning ranges in excess of 2 GHz are reported. Good agreement exists between calculated and measured values of oscillator tuning range.     

A 50-GHz silicon IMPATT diode oscillator and amplifier

Recent experimental observations on a silicon impact avalanche transit-time diode oscillator and amplifier CW-operated at 50 GHz are presented. 1) CW oscillation power of 100 mW was obtained at an overall efficiency of 2 percent. The oscillation frequency was continuously tunable over a 1.3-GHz range by a sliding short. 2) Phase-locking has been achieved with a maximum normalized gain-bandwidth product of 0.1. The minimum locking signal power required for a 500-MHz locking bandwidth was 20 dB below the oscillator output. 3) Electronic tuning of the oscillator frequency was demonstrated by placing a millimeter-wave varactor diode in the tuning circuit. The output frequency versus the bias voltage on the varactor diode was linear with maximum frequency deviation of 300 MHz. Frequency modulation of the oscillator by driving the varactor with a sinusoidal source was obtained at a modulation frequency of 50 MHz. 4) Stable amplification with 13-dB gain was obtained, centered at 52.885 GHz with a 3-dB bandwidth of 1 GHz. The maximum output power obtained was 16 mW. Higher gain of about 17 dB was obtained at a reduced bandwidth. The noise figure of the amplifier was 36 dB. Equivalent circuits for the oscillator and the amplifier are derived. The calculated results agree reasonably well with the experimental observations.     

Experimental investigation of millimeter wave Gunn oscillator circuits in circular waveguides

Millimeter wave Gunn oscillator circuits using circular waveguides for 33–50 GHz and 75–110 GHz frequency bands are described. These oscillators are simpler to construct at millimeter wavelengths compared to the conventional rectangular waveguide circuits. The effect of various circuit parameters on the oscillator frequency and output power has been experimentally studied. The CW power and mechanical tuning range obtained from the circular waveguide Gunn oscillators are found to be comparable and sometimes even better than those obtained with conventional rectangular waveguide circuits using the same Gunn device.     

Analysis of Millimeter Wave Varactor-Tuned Gunn Oscillator Stabilized with a Transmission Cavity

A novel circuit architecture which describes millimeter wave varactor-tuned Gunn oscillator stabilized with a transmission cavity has been proposed in this paper. A corresponding equivalent circuit model has been presented in order to study its performance characteristics. The circuit model consists of four parts which are varactor cavity, main cavity, transmission waveguide and transmission cavity. Based upon this model, electrical tuning characteristics have been studied at first. Mode jumping problems during electrical tuning process have been analyzed qualitatively. Moreover, quality factor and efficiency of the circuit model have been derived by virtue of relevant circuit parameters. The effects of some important circuit parameters affecting circuit performance parameters have been discussed. The circuit model can describe the circuit architecture accurately and effectively. This circuit architecture, which can generate signals exhibiting low frequency modulation noise, high frequency stabilization and electrical tunable characteristics, is applicable to various practical situations.