Improved bounds for the rate loss of multiresolution source codes

We present new bounds for the rate loss of multiresolution source codes (MRSCs). Considering an M-resolution code, the rate loss at the ith resolution with distortion D/sub i/ is defined as L/sub i/=R/sub i/-R(D/sub i/), where R/sub i/ is the rate achievable by the MRSC at stage i. This rate loss describes the performance degradation of the MRSC compared to the best single-resolution code with the same distortion. For two-resolution source codes, there are three scenarios of particular interest: (i) when both resolutions are equally important; (ii) when the rate loss at the first resolution is 0 (L/sub 1/=0); (iii) when the rate loss at the second resolution is 0 (L/sub 2/=0). The work of Lastras and Berger (see ibid., vol.47, p.918-26, Mar. 2001) gives constant upper bounds for the rate loss of an arbitrary memoryless source in scenarios (i) and (ii) and an asymptotic bound for scenario (iii) as D/sub 2/ approaches 0. We focus on the squared error distortion measure and (a) prove that for scenario (iii) L/sub 1/<1.1610 for all D/sub 2/相似文献   

The empirical distribution of rate-constrained source codes

Let X = (X/sub 1/,...) be a stationary ergodic finite-alphabet source, X/sup n/ denote its first n symbols, and Y/sup n/ be the codeword assigned to X/sup n/ by a lossy source code. The empirical kth-order joint distribution Q/spl circ//sup k/[X/sup n/,Y/sup n//spl rceil/(x/sup k/,y/sup k/) is defined as the frequency of appearances of pairs of k-strings (x/sup k/,y/sup k/) along the pair (X/sup n/,Y/sup n/). Our main interest is in the sample behavior of this (random) distribution. Letting I(Q/sup k/) denote the mutual information I(X/sup k/;Y/sup k/) when (X/sup k/,Y/sup k/)/spl sim/Q/sup k/ we show that for any (sequence of) lossy source code(s) of rate /spl les/R lim sup/sub n/spl rarr//spl infin//(1/k)I(Q/spl circ//sup k/[X/sup n/,Y/sup n//spl rfloor/) /spl les/R+(1/k)H (X/sub 1//sup k/)-H~(X) a.s. where H~(X) denotes the entropy rate of X. This is shown to imply, for a large class of sources including all independent and identically distributed (i.i.d.). sources and all sources satisfying the Shannon lower bound with equality, that for any sequence of codes which is good in the sense of asymptotically attaining a point on the rate distortion curve Q/spl circ//sup k/[X/sup n/,Y/sup n//spl rfloor//spl rArr//sup d/P(X/sup k/,Y~/sup k/) a.s. whenever P(/sub X//sup k//sub ,Y//sup k/) is the unique distribution attaining the minimum in the definition of the kth-order rate distortion function. Consequences of these results include a new proof of Kieffer's sample converse to lossy source coding, as well as performance bounds for compression-based denoisers.     

Entropy and the law of small numbers

Two new information-theoretic methods are introduced for establishing Poisson approximation inequalities. First, using only elementary information-theoretic techniques it is shown that, when S/sub n/=/spl Sigma//sub i=1//sup n/X/sub i/ is the sum of the (possibly dependent) binary random variables X/sub 1/,X/sub 2/,...,X/sub n/, with E(X/sub i/)=p/sub i/ and E(S/sub n/)=/spl lambda/, then D(P(S/sub n/)/spl par/Po(/spl lambda/)) /spl les//spl Sigma//sub i=1//sup n/p/sub i//sup 2/+[/spl Sigma//sub i=1//sup n/H(X/sub i/)-H(X/sub 1/,X/sub 2/,...,X/sub n/)] where D(P(S/sub n/)/spl par/Po(/spl lambda/)) is the relative entropy between the distribution of S/sub n/ and the Poisson (/spl lambda/) distribution. The first term in this bound measures the individual smallness of the X/sub i/ and the second term measures their dependence. A general method is outlined for obtaining corresponding bounds when approximating the distribution of a sum of general discrete random variables by an infinitely divisible distribution. Second, in the particular case when the X/sub i/ are independent, the following sharper bound is established: D(P(S/sub n/)/spl par/Po(/spl lambda/))/spl les/1//spl lambda/ /spl Sigma//sub i=1//sup n/ ((p/sub i//sup 3/)/(1-p/sub i/)) and it is also generalized to the case when the X/sub i/ are general integer-valued random variables. Its proof is based on the derivation of a subadditivity property for a new discrete version of the Fisher information, and uses a recent logarithmic Sobolev inequality for the Poisson distribution.     

Semi-empirical model of the ensemble-averaged differential Mueller matrix for microwave backscattering from bare soil surfaces

A semi-empirical model of the ensemble-averaged differential Mueller matrix for microwave backscattering from bare soil surfaces is presented. Based on existing scattering models and data sets measured by polarimetric scatterometers and the JPL AirSAR, the parameters of the co-polarized phase-difference probability density function, namely the degree of correlation /spl alpha/ and the co-polarized phase-difference /spl sigmav/, in addition to the backscattering coefficients /spl sigma//sub /spl nu//spl nu///sup 0/,/spl sigma//sub hh//sup 0/ and /spl sigma//sub /spl nu/h//sup 0/, are modeled empirically in terms of the volumetric soil moisture content m/sub /spl nu// and the surface roughness parameters ks and kl, where k=2/spl pi/f/c, s is the rms height and l is the correlation length. Consequently, the ensemble-averaged differential Mueller matrix (or the differential Stokes scattering operator) is specified completely by /spl sigma//sub /spl nu//spl nu///sup 0/,/spl sigma//sub hh//sup 0/,/spl sigma//sub /spl nu/h//sup 0/,/spl alpha/, and /spl zeta/.     

Compression mappings on primitive sequences over Z/(p/sup e/)

Let Z/(p/sup e/) be the integer residue ring with odd prime p/spl ges/5 and integer e/spl ges/2. For a sequence a_ over Z/(p/sup e/), there is a unique p-adic expansion a_=a_/sub 0/+a_/spl middot/p+...+a_/sub e-1//spl middot/p/sup e-1/, where each a_/sub i/ is a sequence over {0,1,...,p-1}, and can be regarded as a sequence over the finite field GF(p) naturally. Let f(x) be a primitive polynomial over Z/(p/sup e/), and G'(f(x),p/sup e/) the set of all primitive sequences generated by f(x) over Z/(p/sup e/). Set /spl phi//sub e-1/ (x/sub 0/,...,x/sub e-1/) = x/sub e-1//sup k/ + /spl eta//sub e-2,1/(x/sub 0/, x/sub 1/,...,x/sub e-2/) /spl psi//sub e-1/(x/sub 0/,...,x/sub e-1/) = x/sub e-1//sup k/ + /spl eta//sub e-2,2/(x/sub 0/,x/sub 1/,...,x/sub e-2/) where /spl eta//sub e-2,1/ and /spl eta//sub e-2,2/ are arbitrary functions of e-1 variables over GF(p) and 2/spl les/k/spl les/p-1. Then the compression mapping /spl phi//sub e-1/:{G'(f(x),p/sup e/) /spl rarr/ GF(p)/sup /spl infin// a_ /spl rarr/ /spl phi//sub e-1/(a_/sub 0/,...,a_/sub e-1/) is injective, that is, a_ = b_ if and only if /spl phi//sub e-1/(a_/sub 0/,...,a_/sub e-1/) = /spl phi//sub e-1/(b_/sub 0/,...,b_/sub e-1/) for a_,b_ /spl isin/ G'(f(x),p/sup e/). Furthermore, if f(x) is a strongly primitive polynomial over Z/(p/sup e/), then /spl phi//sub e-1/(a_/sub 0/,...,a_/sub e-1/) = /spl psi//sub e-1/(b_/sub 0/,...,b_/sub e-1/) if and only if a_ = b_ and /spl phi//sub e-1/(x/sub 0/,...,x/sub e-1/) = /spl psi//sub e-1/(x/sub 0/,...,x/sub e-1/) for a_,b_ /spl isin/ G'(f(x),p/sup e/).     

The inequalities of quantum information theory

Let /spl rho/ denote the density matrix of a quantum state having n parts 1, ..., n. For I/spl sube/N={1, ..., n}, let /spl rho//sub I/=Tr/sub N/spl bsol/I/(/spl rho/) denote the density matrix of the state comprising those parts i such that i/spl isin/I, and let S(/spl rho//sub I/) denote the von Neumann (1927) entropy of the state /spl rho//sub I/. The collection of /spl nu/=2/sup n/ numbers {S(/spl rho//sub I/)}/sub I/spl sube/N/ may be regarded as a point, called the allocation of entropy for /spl rho/, in the vector space R/sup /spl nu//. Let A/sub n/ denote the set of points in R/sup /spl nu// that are allocations of entropy for n-part quantum states. We show that A~/sub n/~ (the topological closure of A/sub n/) is a closed convex cone in R/sup /spl nu//. This implies that the approximate achievability of a point as an allocation of entropy is determined by the linear inequalities that it satisfies. Lieb and Ruskai (1973) have established a number of inequalities for multipartite quantum states (strong subadditivity and weak monotonicity). We give a finite set of instances of these inequalities that is complete (in the sense that any valid linear inequality for allocations of entropy can be deduced from them by taking positive linear combinations) and independent (in the sense that none of them can be deduced from the others by taking positive linear combinations). Let B/sub n/ denote the polyhedral cone in R/sup /spl nu// determined by these inequalities. We show that A~/sub n/~=B/sub n/ for n/spl les/3. The status of this equality is open for n/spl ges/4. We also consider a symmetric version of this situation, in which S(/spl rho//sub I/) depends on I only through the number i=/spl ne/I of indexes in I and can thus be denoted S(/spl rho//sub i/). In this case, we give for each n a finite complete and independent set of inequalities governing the symmetric allocations of entropy {S(/spl rho//sub i/)}/sub 0/spl les/i/spl les/n/ in R/sup n+1/.     

Achievable key rates for universal simulation of random data with respect to a set of statistical tests

We consider the problem of universal simulation of an unknown source from a certain parametric family of discrete memoryless sources, given a training vector X from that source and given a limited budget of purely random key bits. The goal is to generate a sequence of random vectors {Y/sub i/}, all of the same dimension and the same probability law as the given training vector X, such that a certain, prescribed set of M statistical tests will be satisfied. In particular, for each statistical test, it is required that for a certain event, /spl epsiv//sub /spl lscr//, 1 /spl les/ /spl lscr/ /spl les/ M, the relative frequency /sup 1///sub N/ /spl Sigma//sub i=1//sup N/ 1/sub /spl epsiv//spl lscr//(Y/sub i/) (1/sub /spl epsiv//(/spl middot/) being the indicator function of an event /spl epsiv/), would converge, as N /spl rarr/ /spl infin/, to a random variable (depending on X), that is typically as close as possible to the expectation of 1/sub /spl epsiv//spl lscr/,/ (X) with respect to the true unknown source, namely, to the probability of the event /spl epsiv//sub /spl lscr//. We characterize the minimum key rate needed for this purpose and demonstrate how this minimum can be approached in principle.     

Order statistics from a logistic distribution and applications to survival and reliability analysis

Joint moments involving arbitrary powers of order statistics are the main concern. Consider order statistics u/sub 1/ /spl les/ u/sub 2/ /spl les/ /spl middot//spl middot//spl middot/ /spl les/ u/sub k/ coming from a simple random sample of size n from a real continuous population where u/sub 1/ = x/sub r(1):n/ is order-statistic #r/sub 1/, u/sub 2/ = x/sub r(1)+r(2):n/ is order statistic #(r/sub 1/ + r/sub 2/), et al., and u/sub k/ = x/sub r(1)+/spl middot//spl middot//spl middot/+r(k):n/ is order statistic #(r/sub 1/ +/spl middot//spl middot//spl middot/+ r/sub k/). Product moments are examined of the type E[u/sub 1//sup /spl alpha/(1)/ /spl middot/ u/sub 2//sup /spl alpha/(2)//sub /spl middot/ /spl middot//spl middot//spl middot//spl middot//u/sub k//sup /spl alpha/(k)/] where /spl alpha//sub 1/, ..., /spl alpha//sub k/ are arbitrary quantities that might be complex numbers, and E[/spl middot/] denotes the s-expected value. Some explicit evaluations are considered for a logistic population. Detailed evaluations of all integer moments of u/sub 1/ and recurrence relations, recurring only on the order of the moments, are given. Connections to survival functions in survival analysis, hazard functions in reliability situations, real type-1, type-2 /spl beta/ and Dirichlet distributions are also examined. Arbitrary product moments for the survival functions are evaluated. Very general results are obtained which can be used in many problems in various areas.     

4H-SiC power bipolar junction transistor with a very low specific ON-resistance of 2.9 m/spl Omega//spl middot/cm/sup 2/

This letter reports a newly achieved best result on the specific ON-resistance (R/sub SP/spl I.bar/ON/) of power 4H-SiC bipolar junction transistors (BJTs). A 4H-SiC BJT based on a 12-/spl mu/m drift layer shows a record-low specific-ON resistance of only 2.9 m/spl Omega//spl middot/cm/sup 2/, with an open-base collector-to-emitter blocking voltage (V/sub ceo/) of 757 V, and a current gain of 18.8. The active area of this 4H-SiC BJT is 0.61 mm/sup 2/, and it has a fully interdigitated design. This high-performance 4H-SiC BJT conducts up to 5.24 A at a forward voltage drop of V/sub CE/=2.5 V, corresponding to a low R/sub SP-ON/ of 2.9 m/spl Omega//spl middot/cm/sup 2/ up to J/sub c/=859 A/cm/sup 2/. This is the lowest specific ON-resistance ever reported for high-power 4H-SiC BJTs.     

On the joint source-channel coding error exponent for discrete memoryless systems

We investigate the computation of Csisza/spl acute/r's bounds for the joint source-channel coding (JSCC) error exponent E/sub J/ of a communication system consisting of a discrete memoryless source and a discrete memoryless channel. We provide equivalent expressions for these bounds and derive explicit formulas for the rates where the bounds are attained. These equivalent representations can be readily computed for arbitrary source-channel pairs via Arimoto's algorithm. When the channel's distribution satisfies a symmetry property, the bounds admit closed-form parametric expressions. We then use our results to provide a systematic comparison between the JSCC error exponent E/sub J/ and the tandem coding error exponent E/sub T/, which applies if the source and channel are separately coded. It is shown that E/sub T//spl les/E/sub J//spl les/2E/sub T/. We establish conditions for which E/sub J/>E/sub T/ and for which E/sub J/=2E/sub T/. Numerical examples indicate that E/sub J/ is close to 2E/sub T/ for many source-channel pairs. This gain translates into a power saving larger than 2 dB for a binary source transmitted over additive white Gaussian noise (AWGN) channels and Rayleigh-fading channels with finite output quantization. Finally, we study the computation of the lossy JSCC error exponent under the Hamming distortion measure.     

A high current gain 4H-SiC NPN power bipolar junction transistor

This work reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150/spl deg/C. The transistor blocks larger than 480 V and conducts 2.1 A (J/sub c/=239 A/cm/sup 2/) at V/sub ce/=3.4 V, corresponding to a specific on-resistance (R/sub sp on/) of 14 m/spl Omega/cm/sup 2/, based on a drift layer design of 12 /spl mu/m doped to 6/spl times/10/sup 15/cm/sup -3/. Current gain /spl beta//spl ges/35 has been achieved for collector current densities ranging from J/sub c/=40 A/cm/sup 2/ to 239 A/cm/sup 2/ (I/sub c/=2.1 A) with a peak current gain of 38 at J/sub c/=114 A/cm/sup 2/.     

Random properties of the highest level sequences of primitive sequences over Z(2/sup e/)

Using the estimates of the exponential sums over Galois rings, we discuss the random properties of the highest level sequences /spl alpha//sub e-1/ of primitive sequences generated by a primitive polynomial of degree n over Z(2/sup e/). First we obtain an estimate of 0, 1 distribution in one period of /spl alpha//sub e-1/. On the other hand, we give an estimate of the absolute value of the autocorrelation function |C/sub N/(h)| of /spl alpha//sub e-1/, which is less than 2/sup e-1/(2/sup e-1/-1)/spl radic/3(2/sup 2e/-1)2/sup n/2/+2/sup e-1/ for h/spl ne/0. Both results show that the larger n is, the more random /spl alpha//sub e-1/ will be.     

InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and f/sub max/ and low C/sub cb//I/sub c/ ratio

We report an InP-InGaAs-InP double heterojunction bipolar transistor (DHBT), fabricated using a conventional triple mesa structure, exhibiting a 370-GHz f/sub /spl tau// and 459-GHz f/sub max/, which is to our knowledge the highest f/sub /spl tau// reported for a mesa InP DHBT-as well as the highest simultaneous f/sub /spl tau// and f/sub max/ for any mesa HBT. The collector semiconductor was undercut to reduce the base-collector capacitance, producing a C/sub cb//I/sub c/ ratio of 0.28 ps/V at V/sub cb/=0.5 V. The V/sub BR,CEO/ is 5.6 V and the devices fail thermally only at >18 mW//spl mu/m/sup 2/, allowing dc bias from J/sub e/=4.8 mA//spl mu/m/sup 2/ at V/sub ce/=3.9 V to J/sub e/=12.5 mA//spl mu/m/sup 2/ at V/sub ce/=1.5 V. The device employs a 30 nm carbon-doped InGaAs base with graded base doping, and an InGaAs-InAlAs superlattice grade in the base-collector junction that contributes to a total depleted collector thickness of 150 nm.     

A class of 1-generator quasi-cyclic codes

If R = F/sub q/[x/spl rceil/]/(x/sup m/ - 1), S = F/sub qn/[x]/(x/sup m/ - 1), we define the mapping a_(x) /spl rarr/ A(x) =/spl sigma//sub 0//sup n-1/a/sub i/(x)/spl alpha//sub i/ from R/sup n/ onto S, where (/spl alpha//sub 0/, /spl alpha//sub i/,..., /spl alpha//sub n-1/) is a basis for F/sub qn/ over F/sub q/. This carries the q-ray 1-generator quasicyclic (QC) code R a_(x) onto the code RA(x) in S whose parity-check polynomial (p.c.p.) is defined as the monic polynomial h(x) over F/sub q/ of least degree such that h(x)A(x) = 0. In the special case, where gcd(q, m) = 1 and where the prime factorizations of x/sub m/ 1 over F/sub q/ and F/sub qn/ are the same we show that there exists a one-to-one correspondence between the q-ary 1-generator quasis-cyclic codes with p.c.p. h(x) and the elements of the factor group J* /I* where J is the ideal in S with p.c.p. h(x) and I the corresponding quantity in R. We then describe an algorithm for generating the elements of J*/I*. Next, we show that if we choose a normal basis for F/sub qn/ over F/sub q/, then we can modify the aforementioned algorithm to eliminate a certain number of equivalent codes, thereby rending the algorithm more attractive from a computational point of view. Finally in Section IV, we show how to modify the above algorithm in order to generate all the binary self-dual 1-generator QC codes.     

Cyclic codes over GR(4/sup m/) which are also cyclic over /spl Zopf//sub 4/

Let GR(4/sup m/) be the Galois ring of characteristic 4 and cardinality 4/sup m/, and /spl alpha/_={/spl alpha//sub 0/,/spl alpha//sub 1/,...,/spl alpha//sub m-1/} be a basis of GR(4/sup m/) over /spl Zopf//sub 4/ when we regard GR(4/sup m/) as a free /spl Zopf//sub 4/-module of rank m. Define the map d/sub /spl alpha/_/ from GR(4/sup m/)[z]/(z/sup n/-1) into /spl Zopf//sub 4/[z]/(z/sup mn/-1) by d/spl alpha/_(a(z))=/spl Sigma//sub i=0//sup m-1//spl Sigma//sub j=0//sup n-1/a/sub ij/z/sup mj+i/ where a(z)=/spl Sigma//sub j=0//sup n-1/a/sub j/z/sup j/ and a/sub j/=/spl Sigma//sub i=0//sup m-1/a/sub ij//spl alpha//sub i/, a/sub ij//spl isin//spl Zopf//sub 4/. Then, for any linear code C of length n over GR(4/sup m/), its image d/sub /spl alpha/_/(C) is a /spl Zopf//sub 4/-linear code of length mn. In this article, for n and m being odd integers, it is determined all pairs (/spl alpha/_,C) such that d/sub /spl alpha/_/(C) is /spl Zopf//sub 4/-cyclic, where /spl alpha/_ is a basis of GR(4/sup m/) over /spl Zopf//sub 4/, and C is a cyclic code of length n over GR(4/sup m/).     

High-responsivity high-gain In/sub 0.53/Ga/sub 0.47/As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy

We report the growth and fabrication of bound-to-bound In/sub 0.53/Ga/sub 0.47/As-InP quantum-well infrared photodetectors using metal-organic vapor phase epitaxy. These detectors have a peak detection wavelength of 8.5 /spl mu/m. The peak responsivities are extremely large with R/sub pk/=6.9 A/W at bias voltage V/sub b/=3.4 V and temperature T=10 K. These large responsivities arise from large detector gain that was found to be g/sub n/=82 at V/sub b/=3.8 V from dark current noise measurements at T=77 K and g/sub p/=18.4 at V/sub b/=3.4 V from photoresponse data at T=10 K. The background-limited temperature with F/1.2 optics is T/sub BLIP/=65 K for 0相似文献   

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors (DHBT) have been designed for increased bandwidth digital and analog circuits, and fabricated using a conventional mesa structure. These devices exhibit a maximum 450 GHz f/sub /spl tau// and 490 GHz f/sub max/, which is the highest simultaneous f/sub /spl tau// and f/sub max/ for any HBT. The devices have been scaled vertically for reduced electron collector transit time and aggressively scaled laterally to minimize the base-collector capacitance associated with thinner collectors. The dc current gain /spl beta/ is /spl ap/ 40 and V/sub BR,CEO/=3.9 V. The devices operate up to 25 mW//spl mu/m/sup 2/ dissipation (failing at J/sub e/=10 mA//spl mu/m/sup 2/, V/sub ce/=2.5 V, /spl Delta/T/sub failure/=301 K) and there is no evidence of current blocking up to J/sub e//spl ges/12 mA//spl mu/m/sup 2/ at V/sub ce/=2.0 V from the base-collector grade. The devices reported here employ a 30-nm highly doped InGaAs base, and a 120-nm collector containing an InGaAs/InAlAs superlattice grade at the base-collector junction.     

Characterization of accumulation layer capacitance for extracting data on high-/spl kappa/ gate dielectrics

A new parameter extraction technique has been outlined for high-/spl kappa/ gate dielectrics that directly yields values of the dielectric capacitance C/sub di/, the accumulation layer surface potential quotient, /spl beta//sub acc/, the flat-band voltage, the surface potential /spl phi//sub s/, the dielectric voltage, the channel doping density and the interface charge density at flat-band. The parallel capacitance, C/sub p/(=C/sub sc/+C/sub it/), was found to be an exponential function of /spl phi//sub s/ in the strong accumulation regime, for seven different high-/spl kappa/ gate dielectrics. The slope of the experimental lnC/sub p/(/spl phi//sub s/) plot, i.e., |/spl beta//sub acc/|, was found to depend strongly on the physical properties of the high-/spl kappa/ dielectric, i.e., was inversely proportional to [(/spl phi//sub b/m/sup *//m)/sup 1/2/K/C/sub di/], where /spl phi//sub b/ is the band offset, and m/sup */ is the effective tunneling mass. Extraction of /spl beta//sub acc/ represented an experimental carrier confinement index for the accumulation layer and an experimental gate-dielectric direct-tunneling current index. /spl beta//sub acc/ may also be an effective tool for monitoring the effects of post-deposition annealing/processing.