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1.
An experimental 10.7-MHz switched-capacitor bandpass filter is demonstrated that exhibits a 400-kHz bandwidth with a 42-MHz sampling rate. Basic design issues of such high-frequency filters are also addressed with emphasis on dynamic range and power constraints. A theoretical square relation between power and center frequency agrees well with experimental results. The sixth-order differential bandpass filter chip occupies 2 mm2 using a 2.25-μm gate double-poly CMOS technology  相似文献   

2.
A 28-MHz wideband switched-capacitor (SC) bandpass filter employs an N-path technique and implements transmission zeros in the transfer function to achieve high attenuation. A modified SC biquadratic filter architecture is proposed to achieve high-speed operation. Implemented in a 0.35-/spl mu/m CMOS process, the bandpass filter operates at 28-MHz center frequency with a 3.84-MHz bandwidth and adjacent-channel attenuation of more than 35 dB. At 3-V supply, the filter measures a dynamic range of 37 dB at the 1% THD3 point while dissipating 19.6-mW per pole and occupying a chip area of 1.65 mm/sup 2/.  相似文献   

3.
A double-sampling pseudo-two-path bandpass ΔΣ modulator is proposed. This modulator has an output rate equal to twice the clock rate, uses n/2 operational amplifiers (op-amps) for an nth-older noise transfer function, and has reduced clock feedthrough in the signal path band. The required clocks can be simpler to implement than the conventional pseudo-two-path techniques. The measured signal-to-noise ratio and dynamic range of the fourth-order double-sampling pseudo-two-path bandpass ΔΣ modulator in a 30-kHz bandwidth at a center frequency of 2.5 MHz (at a clock frequency of 5 MHz) are 62 and 68 dB, respectively  相似文献   

4.
提出一种基于半模基片集成波导和缺陷地结构的新型宽带带通滤波器,将半模基片集成波导的高通特性与改进的哑铃形缺陷地结构的低通特性结合,实现了一种宽带小型化的带通滤波器。仿真与测试结果表明,该滤波器中心频率为5.3 GHz,相对带宽为53%,通带范围内插入损耗小于1.6 dB。该滤波器具有宽带小型化,容易集成等优点。  相似文献   

5.
Designing wideband bandpass filters (BPF) with parallel-coupled microstrip lines requires tight coupling resulting in close separation between the lines and difficulty of fabrication. Here, it is shown that the etched slots in the ground plane of the parallel coupled lines can significantly increase the coupling. This technique has been extended to realize ultra-wideband BPFs having 3-dB fractional bandwidth greater than 100% and low insertion loss in the passband.  相似文献   

6.
Nguyen  C. 《Electronics letters》1994,30(25):2149-2150
A new miniature bandpass filter, comprising three-conductor short-circuited spurline resonators of approximately a quarter-wavelength long, with a very wide bandwidth approaching multioctaves is reported for the first time. The chain matrix of the filter resonator is derived. The new filter has been developed using microstrip line with less than 1 dB insertion loss over a passband from 2 to 8 GHz. Reasonably good agreement between the measured and calculated results is observed  相似文献   

7.
This paper presents a compact wideband bandpass filter for TETRA band applications. The proposed filter design is based on a quad mode resonator designed using small rectangular loop loaded with four Stepped Impedance Stubs (SISs) and a short circuit stub. The four modes of the resonator help in generating a wide passband. The use of SISs makes the filter compact. In addition to four transmission poles, the resonator inherently generates a transmission zero above the higher end of passband. Two transmission zeros are generated by the input/output coupling which helps in increasing the selectivity and also for achieving wide stopband. This filter provides a 3 dB fractional bandwidth of 30.33% and maximum insertion loss of 1.3 dB at the center frequency 0.36 GHz with a compact size of 0.125 λg × 0.085 λg (4.1 × 2.78 cm2).  相似文献   

8.
A new compact ultra wideband (UWB) bandpass filter (BPF) using modified multi-mode resonator (MMR) is presented. The filter consists of a multi-mode resonator with dual spur-lines for providing the dual notch bands at 5.2 and 5.8 GHz and connected with a stepped impedance structure for controlling the transmission zeros at lower and higher passband edge. The interdigital coupling input/output (I/O) lines are used for coupling enhancement. The |S21|-magnitude and the frequencies of notch bands can be well determined by tuning the dimensions of the dual spur-lines. The designed procedures are discussed and good agreement between the measurement and EM simulation are compared.  相似文献   

9.
A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/.  相似文献   

10.
The distortion mechanism in switched-capacitor (SC) filters are considered, and closed-form expression relating switched-capacitors filter distortion to circuit parameters are derived. Design techniques for low-distortion applications are discussed and are applied to a sixth-order experimental filter. The filter design uses a fully differential class A/B op amp with a continuous-time common-mode feedback circuit. Distortion measurements show that for 82-dB dynamic range (relative to noise floor) the total harmonic distortion of 0.02% within the whole 4-kHz bandwidth and 0.07% within 20-kHz bandwidth.  相似文献   

11.
A novel wideband bandpass filter with a very compact size is presented in this article. Using a side-coupled stepped impedance resonator, wideband characteristics with adjustable centre frequency and 3-dB fractional bandwidth can be obtained easily. Finally, a filter sample is designed and fabricated to provide an experimental verification on the proposed topology. Good insertion/return losses, flat group delay, wide bandwidth as well as ultra compact size are achieved as demonstrated in both simulation and experiment, which makes this filter a very promising candidate for applications in future wideband communication system.  相似文献   

12.
介绍了一种基于基片集成波导(SIW)结构的小型化微波宽带带通滤波器,采用紧凑型设计,同时提出了其工程设计方法及流程,通过11GHz和15GHz典型微波频段的四腔带通滤波器实例验证,达到对于偏离中心2GHz以上的频段抑制35dB以上的要求,且仿真与测试结果相对吻合较好,设计方法和流程合理、有效。本文网络版地址:http://www.eepw. com.cn/article/271650.htm  相似文献   

13.
A configuration of wideband bandpass filter (BPF) with multiple notched bands is presented. Proposed BPF is based on stepped-impedance resonator. By utilising dual stepped-impedance resonators in folded topology a rectangular-ring resonator is formed. Two notched bands in the passband are achieved without using asymmetrical coupled lines. In other words, the filter configuration is capable of producing notched bands. It should be noted that additional information on filter performance and design is presented. Measurement results are presented to approve propounded filter characteristics. The measured passband of the second proposed filter is from 3.68 to 10.2 GHz with insertion loss of –1.76 dB in the first passband at the centre frequency of 4.45 GHz. The measured notched band frequencies are about 5.45 and 7.95 GHz with rejection of –21.77 and –20.82 dB, respectively. The return loss in the passband is better than –11.4 dB.  相似文献   

14.
This paper presents a new ultra wideband (UWB) bandpass filter (BPF) with dual-notched bands (at 5.2/5.7 GHz) using the stub-loaded rectangular ring multi-mode resonator (MMR). The proposed resonator consists of the dual embedded open-circuited stubs for introducing the dual notch bands and connected with a stub-loaded rectangular ring structure for controlling the two transmission zeros (at 3/11 GHz) at both sides of the UWB passband edge. This study mainly provides a simple method to design a UWB bandpass filter with high passband selectivity and dual-notched bands for satisfying the Federal Communications Commission (FCC-defined) indoor UWB specification. Experimental verification is provided and good agreement has been found between simulation and measurement.  相似文献   

15.
16.
The high frequency (HF) behavior of the switched-capacitor (SC) LDI ladder filter is studied. This study shows that using low sampling frequency with respect to the cutoff frequency reduces the HF error due to the reduction in amplifier gain. Design techniques are also given for the HF SC filters, such as double-sampling scheme, a low sampling frequency with an exact synthesis algorithm, as well as a fast-settling folded-cascode amplifier. These techniques are applied to an experimental fifth-order elliptic SC filter fabricated in a 2-/spl mu/m CMOS technology. The experimental results show that a 3.6-MHz cutoff frequency is attained. All the capacitors are scaled down in order to reduce the setting time of the amplifiers. The active area of the filter is 0.9 mm/SUP 2/. The F/SUB sampling//F/SUB cutoff/ is only 5. The circuit operates from /spl plusmn/5 V and typically dissipates 80 mW when sampled at 18 MHz.  相似文献   

17.
A microstrip bandpass filter has been built with dielectric resonators made of a temperature-compensated material. Its unloaded Q at X band is calculated to be greater than 1200, a four-fold improvement upon conventional printed-on devices. With additional temperature compensation, a temperature coefficient less than 5 ppm/°C is shown to be feasible.  相似文献   

18.
A new combined switched-capacitor (SC) frequency-sampling N-path filter is presented, which allows the implementation of very narrow bandpass filters. The included frequency-sampling (FS) filter suppresses undesirable passbands of the SC N-path filter. The center frequency f/SUB m/ of the bandpass filter is identical to the circuit clock frequency f/SUB c/. Experimental results are presented for a CMOS SC frequency-sampling four-path filter with second-order filter cells, a center frequency of 1 kHz, and -3-dB passband bandwidth of 11.5 Hz.  相似文献   

19.
A 10.7-MHz fully balanced, high-Q, wide-dynamic-range current-tunable Gm-C bandpass filter is presented. The technique is relatively simple based on two fully balanced components, i.e. an adder and a low-Q-based bandpass filter. The Q factor is approximately equal to a typically high and constant value of a common-emitter current gain (β) and is, for the first time, independent of variables such as a center frequency. Possible solutions for good stability of the Q factor with temperature are suggested. Not only can the need for additional Q-tunable circuits be greatly reduced, the sensitivity of the Q factor can be greatly improved. Sensitivities of either the Q factor or the center frequency are constant between 1 and −1 and are no longer strongly affected by the Q factor or variables. As a simple example at 10.7 MHz, the paper demonstrates the high-Q factor of 121, the low total output noise of 5.303 μVrms, the 3rd-order intermodulation-free dynamic range (IMFDR3) of 74.45 dB and the wide dynamic range of 87.45 dB at 1% IM3. The center frequency is current tunable over three orders of magnitude. Comparisons to other 10.7-MHz Gm-C approaches are also included.  相似文献   

20.
The implementation of high-frequency switched-capacitor filters using unity-gain amplifiers in a balanced configuration is described. The effect of parasitic capacitances is analyzed for different structures, single-ended and balanced. Experimental results from a third-order elliptic filter integrated in a standard NMOS process are presented.  相似文献   

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