共查询到20条相似文献,搜索用时 250 毫秒
1.
In order to minimise the excess-noise figure (excess-noise figure = noise figure ? 1) of a linear 2 port, the source conductance gs must have an optimum value of gso. It is shown that this value of gso does not necessarily correspond to the condition for maximum transducer gain. Considering the excess-noise figure and transducer gain, a compromise value of gs is found for the minimum noise measure. 相似文献
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The low-frequency (LF) noise behavior of Si NMOSTs stressed at 4.2 K is investigated and compared with the stress-induced changes in the DC parameters. In linear operation, a reduction of the noise spectral density is observed, which can be explained by considering the reduction in the device transconductance. The excess noise, typically observed in the kink region, is reduced after stress, as is the noise hysteresis. This behaviour can be understood by substituting the changes in the substrate current characteristic in the excess-noise model derived 相似文献
3.
《Electronics letters》1969,5(1):7-8
Measurement of IMPATT-diode-oscillator f.m. noise, for external Q factors ranging between 100 and 10 000, showed that the product of r.m.s. frequency deviation and square root of power output is inversely proportional to the Q factor, in accordance with the Edson formula for f.m. oscillator noise. The excess-noise temperature, varying between 30 and 50dB, rapidly increases with current through the diode. The correlation for f.m. and a.m. noise lies between 0.8 and 1. 相似文献
4.
We present a computer simulation of a strip-geometry superluminescent light emitting diode (SLD). One end of the strip waveguide has a finite reflectivity while the reflectivity vanishes at the other end because it is assumed that the strip waveguide terminates in a high-loss region. The gain of the structure is computed from the drive current and several intrinsic device parameters; gain saturation is taken into account. We discuss the dependence of the light power coupled into a fiber from an InGaAsP SLD at 1.3 μm as a function of the driving current, the reflectivity of one end of the strip waveguide, its numerical aperture (NA), and its length and width. A considerable improvement in power coupling efficiency can be realized when the waveguide NA equals the fiber NA or, in the absence of lateral confinement, when the fiber NA is much larger than the half-width to length ratio (times the refractive index) of the strip waveguide. Previous analyses have ignored lateral waveguiding effects. 相似文献
5.
Oh-Hyun Kwon Hayat M.M. Campbell J.C. Saleh B.E.A. Teich M.C. 《Lightwave Technology, Journal of》2005,23(5):1896-1906
A generalized history-dependent recurrence theory for the time-response analysis is derived for avalanche photodiodes with multilayer, heterojunction multiplication regions. The heterojunction multiplication region considered consists of two layers: a high-bandgap Al/sub 0.6/Ga/sub 0.4/As energy-buildup layer, which serves to heat up the primary electrons, and a GaAs layer, which serves as the primary avalanching layer. The model is used to optimize the gain-bandwidth product (GBP) by appropriate selection of the width of the energy-buildup layer for a given width of the avalanching layer. The enhanced GBP is a direct consequence of the heating of primary electrons in the energy-buildup layer, which results in a reduced first dead space for the carriers that are injected into the avalanche-active GaAs layer. This effect is akin to the initial-energy effect previously shown to enhance the excess-noise factor characteristics in thin avalanche photodiodes (APDs). Calculations show that the GBP optimization is insensitive to the operational gain and the optimized APD also minimizes the excess-noise factor. 相似文献
6.
A separate absorption, grading, and multiplication avalanche photodiode with an AlInAs/GaInAs multiquantum well multiplication region is reported. This device exhibits a low excess-noise factor and a gain-bandwidth product of 50 GHz, due to the high ratio of ionisation rates of the multiplication material. In addition, a large bandwidth is obtained owing to the use of an undoped (n type) GaInAs absorption layer, fully depleted when multiplication occurs.<> 相似文献
7.
为了对掺Yb3+双包层光纤激光器的自脉冲行为进行系统的理论研究,采用数值模拟方法,对光子数密度和反转粒子数密度随时间及抽运功率的变化、阻尼系数与后腔镜的反射率和掺杂粒子浓度的关系,以及光纤本身固有振荡频率随后腔镜反射率的变化进行了理论分析.结果表明,随抽运功率的增加,振荡频率增加,振幅度减小;降低输出端的反馈和粒子的浓度可以抑制自脉冲现象.另外提出了抑制光纤激光器自脉冲的措施,为设计掺Yb3+双包层光纤激光器提供了理论依据. 相似文献
8.
We report the results of excess-noise and normalised receiver sensitivity measurements for In0.53Ga0.47As/InP avalanche photodiodes for use in the ?=0.95 ?m to 1.65 ?m spectral region. The excess-noise measurements are consistent with a hole-to-electron ionisation rate ratio in InP of ~ 0.4. The receiver sensitivity, measured at 45 Mbit/s and 10?9 bit-error-rate, was ?53.2 dBm at a gain of 20 assuming unity quantum efficiency for the detector. This sensitivity is the highest reported at ?=1.3 ?m and represents an improvement over a PIN detector using the same amplifier. 相似文献
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为实现低相位噪声平面振荡器,对推-推振荡器的共用谐振器与相位噪声优化方法进行了研究。提出一种基于多环式开口谐振环的差分传输线,通过加载一对耦合谐振环的方式实现2个单元振荡器之间的弱耦合,提高了共用谐振器的频率选择特性。基于该结构设计并实现了一种X波段推-推振荡器,在设计中采用一种基于振荡器有源品质因子的相位噪声优化方法。测试结果表明:该振荡器在输出二次谐波9.52 GHz处的相位噪声为-115.48 dBc/Hz@100 kHz,基波抑制度达到-54.55 dBc。 相似文献
11.
Jongwoon Park Xun Li Wei-Ping Huang 《Quantum Electronics, IEEE Journal of》2005,41(3):366-375
A systematic investigation of gain-clamped semiconductor optical amplifiers (GC-SOAs) based on the second-order index-coupled DFB gratings is carried out by way of simulation. In particular, we focus on the main effects of the radiation loss caused by the first-order diffraction of the gratings on the amplifier performance. The magnitude of the total complex coupling coefficient is the main factor to determine the level of gain clamping. We demonstrate that a high-performance GC-SOA can be realized by using purely loss-coupled second-order DFB gratings with more relaxed tolerance on grating strength and period. It is shown that, in the presence of weak reflection-related coupling, the parasitic radiation loss associated with the second-order grating always helps to expand the linear amplification region and to reduce the longitudinal spatial hole burning along the cavity. Further, we demonstrate through comparison that the GC-SOAs have higher saturation power and much shorter carrier lifetime than the conventional SOAs. An improved design by longitudinal variation of the grating duty cycle is proposed such that the noise performance of the amplifier can be enhanced without much sacrifice on the linear amplification regime. 相似文献
12.
Noise figure of vertical-cavity semiconductor optical amplifiers 总被引:3,自引:0,他引:3
The noise figure of vertical-cavity semiconductor optical amplifiers (VCSOAs) is investigated theoretically and experimentally. Limitations on the noise figure set by the reflectivity of the mirrors are studied. Highly reflective mirrors lead to increased output noise as well as lasing at moderate carrier densities, which imposes a limit on the obtainable population inversion. Expressions for the excess noise coefficient, which governs signal-spontaneous beat noise enhancement due to finite mirror reflectivity, are presented for transmission and reflection-mode operation. Experimental results from a VCSOA operating in the reflection mode at 1.3 μm are presented. The results, from optical as well as electrical measurement techniques, are analyzed and compared to theoretical values 相似文献
13.
The dependence of excess noise in the radiation from c.w. d.h. GaAlAs-diode lasers as a function of d.c.-pump current has been investigated at microwave frequencies (1 and 4 GHz) in the temperature range from ?30°C to +20°C. Measurements are compared to the results of excess-noise computations obtained from a simple, analytical, laser model. 相似文献
14.
dos Santos Ferreira M.F. Rodrigues Ferreira da Rocha J. de Lemos Pinto J. 《Quantum Electronics, IEEE Journal of》1992,28(4):833-841
A theoretical analysis is performed of the frequency noise in tunable two- and three-section distributed Bragg reflector (DBR) laser diodes (LDs), taking into account the nonlinear gain compression effect. For a two-section DBR LD the frequency noise is shown to depend significantly on the tuning current, particularly at low frequencies (below the gigahertz range) and for low and moderate values of the grating coupling coefficient. For high values of this coefficient the tuning dependence is generally negligible when the tuning is performed only through the DBR section, but it becomes significant when using the phase control current in a three-section device. It is shown that the enhancement factor for the spontaneous emission rate due to the longitudinal field dependence increases significantly with tuning for low values of the grating coupling coefficient 相似文献
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A formalism for computing the reflectivity at oblique incidence of grating Bragg reflectors in integrated optics is developed. Attention is focused on the wavelength region near the Bragg wavelengths, where efficient reflection and strong Te-TM mode coupling occurs. The waveguide fields are expanded in normal modes of a waveguide film without the grating, and an answer is given to the question of how to define this film. Polarization resolved reflectivity spectra for a number of Bragg reflectors are calculated, and implications for device design in integrated optics are discussed 相似文献
17.
《IEEE transactions on information theory / Professional Technical Group on Information Theory》2009,55(2):689-699
18.
A Green's function approach to the analysis of semiconductor lasers is formulated in a form suitable for complex cavity structures. Both the spontaneous emission rate and the effective phase-amplitude coupling factor can be accurately evaluated. For distributed-feedback (DFB) lasers, the spontaneous emission rate is strongly dependent on both the facet reflectivities and the grating coupling coefficients. The effective phase-amplitude coupling factor depends on the wavelength detuning from the gain maximum. The calculated linewidth of DFB lasers differs considerably from previous calculated results and gives better agreement with experimental results. For composite-cavity lasers, the frequency dependence of the equivalent reflectivity has a strong impact on the phase-amplitude coupling factor and the spontaneous emission rate. Distributed Bragg reflector (DBR) lasers are investigated as an example of a composite-cavity structure 相似文献
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