Mechanical and thermal properties of LaMgAl11O19

Lanthanum magnesium hexaaluminate (LaMgAl₁₁O₁₉) powders were synthesized successfully at 1300 °C for 4 h by solid-state reaction, and LaMgAl₁₁O₁₉ ceramic was prepared at 1700 °C for 6 h by pressureless sintering. Phase composition, microstructure, mechanical and thermophysical properties of LaMgAl₁₁O₁₉ ceramic were investigated. Results show that the flexural strength and fracture toughness of LaMgAl₁₁O₁₉ ceramic are 353.3 ± 12.5 MPa and 4.60 ± 0.46 MPa m^1/2. Young's Modulus and Poisson ratio is 295 GPa and 0.23, respectively. The linear thermal expansion coefficient of LaMgAl₁₁O₁₉ ceramic from 473 K to 1473 K is 9.17 × 10⁻⁶/K, and thermal conductivity at 1273 K is 2.55 W/m K.     

Microwave dielectric properties of MgAl2O4–CoAl2O4 spinel compounds prepared by reaction-sintering process

MgAl₂O₄ spinel exhibits fascinating microwave dielectric properties, but the synthesis of dense MgAl₂O₄ ceramics requires high firing temperatures. In this study, Co is introduced into MgAl₂O₄ ceramics to improve their sinterability and microwave dielectric properties. An Mg_1−xCo_xAl₂O₄ solid solution of a spinel structure was observed in the MgAl₂O₄–CoAl₂O₄ system, and dense Mg_1−xCo_xAl₂O₄ ceramics were obtained by sintering at 1475–1500 °C in air for 2–6 h. Co addition is effective in lowering the sintering temperature to 1475 °C. Q × f of Mg_1−xCo_xAl₂O₄ ceramics was increased to 49,300 GHz with an increase in Co content to 0.2, but degraded with a further increase in Co content. The temperature coefficient of resonant frequency of Mg_1−xCo_xAl₂O₄ ceramics was sustained at between −73 and −23 ppm/°C to the variation of Co content.     

Enhancement microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by Substituting Mg for Co

The microwave dielectric properties of La(Mg_0.5−xCo_xSn_0.5)O₃ ceramics were examined with a view to exploiting them for mobile communication. The La(Mg_0.5−xCo_xSn_0.5)O₃ ceramics were prepared using the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the La(Mg_0.4Co_0.1Sn_0.5)O₃ ceramics revealed that La(Mg_0.4Co_0.1Sn_0.5)O₃ is the main crystalline phase, which is accompanied by small extent of La₂Sn₂O₇ as the second phase. Formation of this Sn-rich second phase was attributed to the loss of MgO upon ignition. Increasing the sintering temperatures seemed to promote the formation of La₂Sn₂O₇. An apparent density of 6.67 g cm⁻³, a dielectric constant (?_r) of 20.3, a quality factor (Q.F.) of 70,500 GHz, and a temperature coefficient of resonant frequency (τ_f) of −77 ppm °C⁻¹ were obtained for La(Mg_0.4Co_0.1Sn_0.5)O₃ ceramics that were sintered at 1550 °C for 4 h.     

Structure and thermal conductivity of Gd2(TixZr1 − x)2O7 ceramics

The Gd₂(Ti_xZr_1 − x)₂O₇ (x = 0, 0.25, 0.50, 0.75, 1.00) ceramics were synthesized by solid state reaction at 1650 °C for 10 h in air. The relative density and structure of Gd₂(Ti_xZr_1 − x)₂O₇ were analyzed by the Archimedes method and X-ray diffraction. The thermal diffusivity of Gd₂(Ti_xZr_1 − x)₂O₇ from room temperature to 1400 °C was measured by a laser-flash method. The Gd₂Zr₂O₇ has a defect fluorite-type structure; however, Gd₂(Ti_xZr_1 − x)₂O₇ (0.25 ≤ x ≤ 1.00) compositions exhibit an ordered pyrochlore-type structure. Gd₂Zr₂O₇ and Gd₂Ti₂O₇ are infinitely soluable. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ increases with increasing Ti content under identical temperature conditions. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ first decreases gradually with the increase of temperature below 1000 °C and then increases slightly above 1000 °C. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ is within the range of 1.33 to 2.86 W m^− 1 K^− 1 from room temperature to 1400 °C.     

Crystal structure and ferroelectric properties of Ca(Cu3−xMx)Ti4O12 (M = Fe and Ni) ceramics

M-substituted Ca(Cu_3−xM_x)Ti₄O₁₂ (CCMTO) ceramics, where M = Fe and Ni, were synthesized and the influence of M substitutions for Cu on the crystal structure and ferroelectric properties of CCMTO ceramics were investigated in this study. From the variations in the lattice parameters of CCMTO ceramics, the solubility limit of Ni substitution for Cu in CaCu_3−xNi_xTi₄O₁₂ (CCNTO) ceramics was x = 0.2, whereas that of CaCu_3−xFe_xTi₄O₁₂ (CCFTO) ceramics was x = 0.05. The crystal structural analysis of CCMTO ceramics revealed that the single phase of CCMTO ceramics belongs to the I23 non-centrosymmetric space group of I23; as a result, the P_r and E_c values of CCFTO ceramics at x = 0.05 were 1.8 μC/cm² and 40 kV/cm, respectively. The ferroelectric behavior of CCMTO ceramics by the M substitutions for Cu may be related to the displacement of a Ti⁴⁺ cation in the TiO₆ octahedra and tilting of the Ti–O–Ti angle because of the non-centrosymmetric space group.     

Correlation of crystal structure and microwave dielectric properties for Zn(Ti1−xSnx)Nb2O8 ceramics

The correlation of crystal structure and microwave dielectric properties for Zn(Ti_1−xSn_x)Nb₂O₈ ceramics were investigated. The Zn(Ti_1−xSn_x)Nb₂O₈ ceramics contained ZnTiNb₂O₈ and an unknown Columbite-type phase. The columbite structure phase with increasing degree of ordering led to decrease of dielectric constant, increase of Qf and τ_f. The ZnTiNb₂O₈ with decreasing cation valence led to increase of τ_f. The typical values were: ? = 30.88, Qf = 43,500 GHz, τ_f = −54.32 × 10⁻⁶/ °C.     

Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates

In the present work we report on the structural and electrical properties of metal-oxide-semiconductor (MOS) devices with HfO₂/Dy₂O₃ gate stack dielectrics, deposited by molecular beam deposition on p-type germanium (Ge) substrates. Structural characterization by means of high-resolution Transmission Electron Microscopy (TEM) and X-ray diffraction measurements demonstrate the nanocrystalline nature of the films. Moreover, the interpretation of the X-ray reflectivity measurements reveals the spontaneous growth of an ultrathin germanium oxide interfacial layer which was also confirmed by TEM. Subsequent electrical characterization measurements on Pt/HfO₂/Dy₂O₃/p-Ge MOS diodes show that a combination of a thin Dy₂O₃ buffer layer with a thicker HfO₂ on top can give very good results, such as equivalent oxide thickness values as low as 1.9 nm, low density of interfacial defects (2-5 × 10¹² eV^− 1 cm^− 2) and leakage currents with typical current density values around 15 nA/cm² at V_g = V_FB − 1V.     

Elaboration and characterization of lanthanide aluminate single crystals with the formula LnMgAl11O19

Single crystals of lanthanide aluminates LnMgAl₁₁O₁₉ have been prepared with the purpose of investigating their physical properties which could eventually have useful applications. Large crystals of LaMgAl₁₁O₁₉, PrMgAl₁₁O₁₉, NdMgAl₁₁O₁₉, SmMgAl₁₁O₁₉, EuMgAl₁₁O₁₉ and La_1?xNd_xMgAl₁₁O₁₉ (0 < x < 1) are obtained by two fusion crystal growth methods : Verneuil flame fusion process and floating zone. The main characteristics of these crystals are given : growth conditions, aspect, crystal perfection, size, structure (determined from LaMgAl₁₁O₁₉), cleavage, chemical reactivity, microhardness... The compound La_0.9Nd_0.1MgAl₁₁O₁₉ (L.N.A.) exhibits optical properties which make it a promising candidate for high power laser material.     

Enhanced thermoelectric properties of NaCo2O4 by adding ZnO

The primary phase present in the as-sintered Na(Co_1 − xZn_x)₂O₄ (0 ≤ x ≤ 0.1) bodies was the solid solution of the constituent oxides with a bronze-type layered structure. The electrical conductivity of the Na(Co_1 − xZn_x)₂O₄ samples significantly increased with an increase in ZnO content. The sign of the Seebeck coefficient for all samples was positive over the whole temperature range (723-1073 K), i.e., p-type conduction. The power factor of Na(Co_0.95Zn_0.05)₂O₄ showed an outstanding power factor (1.7 × 10^− 3Wm^− 1 K^− 2) at 1073 K. The power factor was above four times superior to that of ZnO-free NaCo₂O₄ (0.4 × 10^− 3Wm^− 1 K^− 2). This originates from an unusually large Seebeck coefficient (415 μVK^− 1) accompanied with high conductivity (127Ω^− 1 cm^− 1) at 1073 K.     

Synthesis of Tb3Al5O12 (TAG) transparent ceramics for potential magneto-optical applications

Tb₃Al₅O₁₂ transparent ceramics have been prepared by solid state reaction and vacuum sintering. The optical quality and the microstructure of the samples were investigated. The sample sintered at 1650 °C possessed relatively good optical transparency from 400 nm to 1600 nm. The Verdet constant measured at 632.8 nm of the quasi-pore-free Tb₃Al₅O₁₂ transparent ceramic was −172.72 rad T⁻¹ m⁻¹, which was close to the counterpart of Tb₃Al₅O₁₂ single crystal. The thermal conductivity of the sample was also measured. To the best of our knowledge, this is the first time that Tb₃Al₅O₁₂ transparent ceramic with relatively good optical quality and magneto-optical property has been reported.     

Optical properties of transparent Dy doped Ba2TiSi2O8 glass ceramic

The Ba₂TiSi₂O₈ is a well known piezoelectric, ferroelectric and non-linear crystal. Nanocrystals of Ba₂TiSi₂O₈ doped with 1.5 Dy³⁺ have been obtained by thermal treatment of a precursor glass and their optical properties have been studied. X-ray diffraction patterns and optical measurements have been carried out on the precursor glass and glass ceramic samples. The emission spectra corresponding to the Dy³⁺: ⁴F_9/2 → ⁶H_13/2 (575 nm), ⁴F_9/2 → ⁶H_11/2 (670 nm) and ⁴F_9/2 → ⁶H_9/2 (757 nm) transitions have been obtained under laser excitation at 473 nm. These measurements confirm the incorporation of the Dy³⁺ ions into the Ba₂TiSi₂O₈ nanocrystals which produces an enhancement of luminescence at 575 nm. At this wavelength has been demonstrated a maximum optical amplification around 1.9 cm⁻¹ (∼8.2 dB/cm).     

A yellow-emitting Ca3Si2O7: Eu phosphor for white LEDs

A series of yellow-emitting phosphors based on a silicate host matrix, Ca_3 − xSi₂O₇: xEu²⁺, was prepared by solid-state reaction method. The structure and photoluminescent properties of the phosphors were investigated. The XRD results show that the Eu²⁺ substitution of Ca²⁺ does not change the structure of Ca₃Si₂O₇ host and there is no impurity phase for x < 0.12. The SEM images display that phosphors aggregate obviously and the shape of the phosphor particle is irregular. The EDX results reveal that the phosphors consist of Ca, Si, O, Eu and the concentration of these elements is close to the stoichiometric composition. The Ca_3 − xSi₂O₇: xEu²⁺ phosphors can be excited at a wavelength of 300-490 nm, which is suitable for the emission band of near ultraviolet or blue light-emitting-diode (LED) chips. The phosphors exhibit a broad emission region from 520 to 650 nm and the emission peak centered at 568 nm. In addition, the shape and the position of the emission peak are not influenced by the Eu²⁺ concentration and excitation wavelength. The phosphor for x = 0.045 has the strongest excitation and emission intensity, and the Ca_3 − xSi₂O₇: xEu²⁺ phosphors can be used as candidates for the white LEDs.     

V-doping effects on ferroelectric properties of K0.5Bi4.5Ti4O15 thin films

V-doped K_0.5Bi_4.5Ti₄O₁₅ (K_0.5Bi_{4.5 − x/3}Ti_4 − xV_xO₁₅, KBTiV-x, x = 0.00, 0.01, 0.03, and 0.05) thin films were prepared on a Pt(111)/Ti/SiO₂/Si(100) substrate by a chemical solution deposition method. The thin films were annealed by using a rapid thermal annealing process at 750 °C for 3 min in an oxygen atmosphere. Among them, KBTiV-0.03 thin film exhibited the most outstanding electrical properties. The value of remnant polarization (2P_r) was 75 μC/cm² at an applied electric field of 366 kV/cm. The leakage current density of the thin film capacitor was 5.01 × 10⁻⁸ at 100 kV/cm, which is approximately one order of magnitude lower than that of pure K_0.5Bi_4.5Ti₄O₁₅ thin film capacitor. We found that V doping is an effective method for improving the ferroelectric properties of K_0.5Bi_4.5Ti₄O₁₅ thin film.     

Enhancement of thermoelectric figure of merit by doping Dy in La0.1Sr0.9TiO3 ceramic

Ceramic samples of La_0.1Sr_0.9−xDy_xTiO₃ (x = 0.01, 0.03, 0.07, 0.10) have been prepared by the solid-state reaction method. Characterization from the powder X-ray diffraction indicates that their crystal structure changes from cubic to tetragonal phase. Their electrical and thermal transport properties are measured in the temperature range of 300-1100 K. n-Type thermoelectric is obtained with large Seebeck coefficient. The figure of merit is markedly improved, due to relatively lower electrical resistivity and thermal conductivity by Dy doping effect. A much lower electrical resistivity of 0.8 mΩ cm at room temperature is obtained in La_0.1Sr_0.8Dy_0.1TiO₃, and with a relatively lower thermal conductivity of 2.5 W/m K at 1075 K. The maximum figure of merit reaches ∼0.36 at 1045 K for La_0.1Sr_0.83Dy_0.07TiO₃, which is the largest value among n-type oxide thermoelectric ceramics.     

Structural and spectroscopic characterization of Yb doped Lu2O3 transparent ceramics

Yb³⁺ doped Lu₂O₃ transparent ceramics were fabricated by the solid-state reaction method and sintered in H₂ atmosphere. Structural and spectroscopic properties of Yb:Lu₂O₃ ceramics were studied. The Yb:Lu₂O₃ ceramic structure, and the lattice parameter are refined with the Rietveld method. Yb:Lu₂O₃ has broad absorption and emission bands with a long fluorescence lifetime (1.31 ms). The energy level diagram is calculated based on the absorption and emission spectra, Yb³⁺ in Lu₂O₃ ceramics exhibits a big splitting energy of the ²F_7/2 ground state (1023 cm⁻¹). Furthermore, the gain cross-section (σ_g) is estimated with different β values.     

Microwave dielectric properties of LaMgAl11O19

The suitable choice of a substrate material is one of the aims to be fulfilled in high speed microwave technology. LaMgAl₁₁O₁₉ oxide ceramic material, which belongs to the magnetoplumbite family, has been reported earlier as a potential candidate for such applications. This material has been prepared by conventional solid-state ceramic route. The structure has been studied by X-ray diffraction and characterized at microwave frequencies. The effect of dopant and glass addition on the microwave dielectric properties of this material has also been investigated. LaMgAl₁₁O₁₉ has relatively low dielectric constant (ε_r=14), low dielectric loss or high quality factor (Q_u×f>28,000 GHz at 7 GHz) and small temperature variation of resonant frequency (τ_f=−12 ppm/°C) at room temperature (300 K). These properties make LaMgAl₁₁O₁₉ as a good substrate material and as a dielectric resonator to be used in microwave devices operating at relatively high frequencies.     

Photoluminescence properties of RE-activated Na3GdP2O8 (RE = Tb, Dy, Eu, Sm) under VUV excitation

RE³⁺-activated monoclinic Na₃GdP₂O₈ (RE³⁺ = Tb³⁺, Dy³⁺, Eu³⁺, Sm³⁺) phosphors have been synthesized by a solid-state reaction method. Their photoluminescence properties in the vacuum ultraviolet (VUV) region were investigated. By analyzing their excitation spectra, the host-related absorption band was determined to be around 166 nm. The f-d transition bands and the charge transfer bands for Na₃GdP₂O₈:RE³⁺ (RE³⁺ = Tb³⁺, Dy³⁺, Eu³⁺, Sm³⁺) were assigned and corroborated. For the sample Na₃GdP₂O₈:5%Tb³⁺, the strong bands at around 202 and 221 nm are assigned to the 4f-5d spin-allowed transitions and the weak band at 266 nm is related to the spin-forbidden transition of Tb³⁺. For Na₃GdP₂O₈:5%Dy³⁺, the broad band at 176 nm could be related to the f-d transitions of Dy³⁺ and the O²⁻ → Dy³⁺ charge transfer band (CTB) besides the host-related absorption. In the excitation spectrum of Eu³⁺ doped sample, the O²⁻ → Eu³⁺ CTB is observed to be at 245 nm. For the Sm³⁺ doped sample, the O²⁻ → Sm³⁺ CTB is not distinguished obviously and is overlapped with the host-related absorption band.     

Microwave dielectric properties of La1−xBix(Mg0.5Sn0.5)O3 ceramics

The La_1−xBi_x(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the La_0.97Bi_0.03(Mg_0.5Sn_0.5)O₃ ceramics revealed no significant variation of phase with sintering temperatures. An apparent density of 6.50 g cm⁻³, a dielectric constant (?_r) of 20.2, a quality factor (Q × f) of 58,100 GHz and a temperature coefficient of resonant frequency (τ_f) of −84.2 ppm °C⁻¹ were obtained for La_0.97Bi_0.03(Mg_0.5Sn_0.5)O₃ ceramics that were sintered at 1550 °C for 4 h.     

Improved thermoelectric properties by adding Al for Zn in (ZnO)mIn2O3

The grain size and density of the sintered (Zn_1 − xAl_xO)_mIn₂O₃ bodies decreased with the small Al₂O₃ content (≤ 0.012), and then increased gradually by further increasing the Al₂O₃ content. The addition of Al for Zn in the (ZnO)_mIn₂O₃ led to an increase in both the electrical conductivity and the absolute value of the Seebeck coefficient. This indicates that the power factor was significantly enhanced by adding Al for Zn. The thermoelectric power factor was maximized to 1.67 × 10^− 3 W m^− 1 K^− 2 at 1073 K for the (Zn_0.992Al_0.008O)_mIn₂O₃ sample.     

Effects of Fe2O3 doping on the microstructure and piezoelectric properties of 0.55Pb(Ni1/3Nb2/3)O3-0.45Pb(Zr0.3Ti0.7)O3 ceramics

0.55Pb(Ni_1/3Nb_2/3)O₃-0.45Pb(Zr_0.3Ti_0.7)O₃(PNN-PZT) ceramics with different concentration of xFe₂O₃ doping (where x = 0.0, 0.8, 1.2, 1.6 mol%) were synthesized by the conventional solid state sintering technique. X-ray diffraction analysis reveals that all specimens are a pure perovskite phase without pyrochlore phase. The density and grain size of Fe-doped ceramics tend to increase slightly with increasing concentration of Fe₂O₃. Comparing with the undoped ceramics, the piezoelectric, ferroelectric and dielectric properties of the Fe-doped PNN-PZT specimens are significantly improved. Properties of the piezoelectric constant as high as d₃₃ ~ 956 pC/N, the electromechanical coupling factor k_p ~ 0.74, and the dielectric constant ε_r ~ 6095 are achieved for the specimen with 1.2 mol% Fe₂O₃ doping sintered at 1200 °C for 2 h.