GaAs PIN二极管大功率毫米波单刀双掷开关单片

采用76.2mm(3英寸)GaAs PIN二极管工艺设计和制作了大功率毫米波单刀双掷开关单片。采用并联结构的单刀双掷开关以获得较高的功率特性。在片测试表明,在30～36GHz工作频段,开关导通支路插损1.0dB,驻波优于1.5,开关关断端口隔离度大于34dB。开关在导通态下输入功率0.5dB压缩点P-0.5 dB大于5W。     

GaAs MMIC broadband SPDT PIN switch

The first GaAs MMIC using PIN diodes as the active elements is described. The single-pole double-throw (SPDT) switch covers the frequency range 2 to 18 GHz, and can handle incident powers of 1W at X-band. Isolation and insertion loss vary respectively from ? 55 dB and 1 dB at 2 GHz to ?17 dB and 2.2 dB at 18 GHz.     

GaAs基E/D PHEMT技术单片集成微波开关及其逻辑控制电路

利用GaAs基E/D PHEMT技术单片集成微波开关及其逻辑控制电路的制作工艺和设计方法,采用0.8μm GaAsE/D PHEMT工艺,制备出性能良好的解码器功能内置的DC～10GHz SPDT MMIC,基本实现逻辑电路与开关电路的集成.开关电路在DC～10GHz内插入损耗小于1.6dB,隔离度大于24dB;整个电路只需要1位控制信号,有效地减少了开关电路的控制端口数目,节省了芯片面积,为GaAs多功能电路的研究奠定了基础.     

Novel high-isolation FET switches

This paper describes novel high-isolation monolithic microwave/millimeter-wave integrated circuit (MMIC) field-effect transistor (FET) switches that have higher isolation characteristics than conventional switches without much insertion loss degradation. The newly developed switches consist of series/shunt FETs and T-shaped R-C-R circuit. Each FET switch utilizes the parasitic capacitive component of the FETs in the off-state to produce a band-rejection filter at the operating frequency. The design method of the newly proposed switches and their characteristics are described herein. With this method, the isolation characteristics are improved by more than 15 dB between 5.4 GHz and 6.4 GHz and more than 20 dB between 5.5 GHz and 6.1 GHz over conventional values     

An Internally-Matched High-Isolation CMOS SPDT Switch Using Leakage Cancellation Technique

An internally-matched single-pole double-throw (SPDT) switch with high isolation is presented. The high isolation is resulted from the leakage cancellation by employing a compensation circuit, which also achieves impedance match for all ports. The SPDT chip, implemented in a 0.18-mum CMOS process, achieves a measured isolation of 72 dB, an insertion loss of 1.1 dB, return losses better than 10 dB at all ports and PidB of 19.3 dBm at 1.9 GHz.     

Broadband InGaAs PIN Traveling-Wave Switch Using a BCB-Based Thin-Film Microstrip Line Structure

This letter describes the design and fabrication of a broadband InGaAs PIN traveling wave switch. A new thin-film microstrip line structure integrated with InGaAs PIN diodes has been used to enhance the switch performance at higher frequencies. The developed InGaAs PIN switch has an insertion loss of less than 3.2 dB and an isolation of greater than 40 dB in a broadband frequency range from 25 to 95 GHz. The BCB-based multi-layer technology effectively reduces the chip size of the fabricated SPDT MMIC switch to 1.05 times 0.58 mm². To our knowledge, this is the first InGaAs PIN traveling-wave switch demonstrated up to 95 GHz.     

Analysis and Design of Bandpass Single-Pole–Double-Throw FET Filter-Integrated Switches

This paper proposes a method to integrate a single-pole - double-throw (SPDT) switch and a quarter-wavelength bandpass filter. A 1-GHz SPDT hybrid switch and a 60-GHz pseudomorphic HEMT monolithic-microwave integrated-circuit SPDT switch with 30% fractional bandwidth are demonstrated. The 1-GHz SPDT switch achieves 1.5-dB insertion loss and 20-dB isolation at center frequency. For the 60-GHz SPDT switch, the measured insertion loss is lower than 2.5 dB and the isolation is higher than 27 dB. The low insertion loss and high isolation show that no performance is degraded when integrating the filter function. The analysis of the power performance is also described. Using the device dc-IV curves, the power compression point can be predicted.     

低压低能耗应用的InGaAs／AlGaAsPHEMT单片微波SPDT开关

提出了微波频率下ＰＨＥＭＴ在作开关运用时一种简化的等效电路模型，其模型参数可从对实际ＰＨＥＭＴ芯片的在片微波测试方便地确定。对于电路中元件采用不同尺寸组合情形下所进行的开关性能（插入损耗，隔离度，输入及输出反射损耗）的模拟计算表明，与实验结果符合良好。在对串／并联ＰＨＥＭＴ型ＳＰＤＴ开关的ＣＡＤ优化设计基础上进行了ＩｎＧａＡｓ／ＡｌＧａＡｓＰＨＥＭＴ单片ＳＰＤＴ微波开关的实验研制。从研制的ＭＭＩＣ芯片上在片测试得到的结果为：对应新的个人通信频段的应用，在０～２ＧＨＺ范围内，插入损耗＜１．０ｄＢ，隔离度＞５０ｄＢ，输入及输出反射损耗均优于２４ｄＢ。研制的这种高性能单片开关还可在低至－２．０Ｖ的控制电压下工作。     

$Ka$-Band Low-Loss and High-Isolation Switch Design in 0.13-$mu{hbox {m}}$ CMOS

This paper presents designs and measurements of Ka-band single-pole single-throw (SPST) and single-pole double-throw (SPDT) 0.13-CMOS switches. Designs based on series and shunt switches on low and high substrate resistance networks are presented. It is found that the shunt switch and the series switch with a high substrate resistance network have a lower insertion loss than a standard designs. The shunt SPST switch shows an insertion loss of 1.0 dB and an isolation of 26 dB at >35 GHz. The series SPDT switch with a high substrate resistance network shows excellent performance with 2.2-dB insertion loss and isolation at 35 GHz, and this is achieved using two parallel resonant networks. The series-shunt SPDT switch using deep n-well nMOS transistors for a high substrate resistance network results in an insertion loss and isolation of 2.6 and 27 dB, respectively, at 35 GHz. For series switches, the input 1-dB compression point (1P₁) can be significantly increased to with the use of a high substrate resistance design. In contrast, of shunt switches is limited by the self-biasing effect to 12 dBm independent of the substrate resistance network. The paper shows that, with good design, several 0.13- CMOS designs can be used for state-of-the-art switches at 26-40 GHz.     

基于GaAs PIN二极管的宽带大功率单片单刀双掷开关

GaAs PIN二极管具有开态电阻小、截止频率高以及功率容量大的特点,采用GaAs PIN二极管制作的开关插入损耗较小、隔离度较高、并且功率的线性较好。基于河北半导体研究所GaAs PIN工艺制造了一款单刀双掷开关芯片。该开关采用单级并联结构。通过微波在片测试,在小信号条件下,6～18 GHz范围内插入损耗小于1.45 dB、隔离度大于28 dB,输入输出反射损耗小于7.5 dB。把开关装入夹具中进行功率特性测试,在连续波输入功率37 dBm,12 GHz条件下测试输出功率仅压缩0.5 dB,具有非常好的功率特性。在4英寸(100 mm)晶圆上开关的成品率较高,具有非常好的工程应用前景。     

DC—12GHz GaAs微波单片集成开关

本文介绍了全气密陶瓷封装GaAs MMIC开关的设计方法和制造工艺.研制成的GaAsMMIC单刀单掷开关在DC-12GHz频带内,插入损耗为0.3—1.4dB,隔离度为19—27dB,反射损耗大于11dB,开关速度小于1ns,8GHz下功率处理能力大于25dBm.     

宽带GaAs MMIC开关耦合器芯片设计

介绍了一种宽带开关耦合器芯片的研制。在GaAs pHEMT工艺平台上将宽带单刀双掷开关和兰格耦合器集成在一个芯片上,在实现二路功率分配功能的同时,还提供了在两个输出端口之间±90°相位切换的功能。该芯片频率范围覆盖6~18GHz,在整个频带内插入损耗<3.7dB,相位误差<14°,输入输出驻波比<1.8∶1。芯片尺寸1.5mm×3.0mm×0.1mm。详细描述了电路的设计流程,并提供最终的测试结果。该芯片具有频带宽、体积小、使用方便等特点,可应用于不同的微波系统。     

基于滤波器综合分析法的118 GHz单刀二掷开关

采用滤波器综合分析方法, 基于分立式AlGaAs/GaAs异质结PIN二极管, 根据其等效寄生参数, 综合出单刀二掷开关集总参数滤波器模型, 以此分析其等效分布参数电路, 设计出了118 GHz星载辐射计用单刀二掷开关准单片, 开关电路尺寸6×2.5×0.1 mm3.通过开关模块封装用波导-微带过渡和键合金带插损的分析研究, 研制出了低插损的118 GHz开关模块, 在110~120 GHz, 测得开关插损小于3.0 dB, 插损典型值2.6 dB;开关隔离度大于22 dB;开关响应时间、导通时间、关断时间、恢复时间分别小于18 ns、20 ns、10 ns、18 ns, 该准单片作为通道切换开关可集成应用于118 GHz收发组件中.     

驱动与信号隔离的单刀双掷RF MEMS开关

设计了一种基于横向金属接触的DC-5 GHz单刀双掷RF MEMS开关,该开关包括一套有限地共面波导(FGCPW)传输线和左右摆动的悬臂梁。利用绝缘的介质层实现了驱动信号与射频信号的隔离,提高了开关的性能。根据开关的拓扑结构,提出相应的等效电路,并据此实现开关射频性能的优化设计。开关利用MetalMUMPs工艺实现,测试结果显示,该开关在5GHz的插入损耗为0.8dB,回波损耗大于20dB,隔离度为40dB。测得开关的开启电压为59V。     

砷化镓0.25μm PHEMT开关模型研究

借助于传统的FET等效电路模型,给出了0.25μm GaAs PHEMT的开关模型,并在ICCAP和ADS软件中,完成等效电路参数的提取与优化。通过对单刀单掷(SPST)开关的仿真和测试,表明,在0.1～20 GHz的频域内,其"开"态插入损耗误差、端口1和端口2的电压驻波比误差分别小于0.3 dB、0.24和0.19;其"关"态隔离度误差、端口1和端口2的电压驻波比误差分别小于1.9 dB、0.12和0.08。文中得到的PHEMT开关模型将有助于控制类单片集成电路的研究与开发。     

Design and analysis of a 70-ps SiGe differential RF switch

This paper presents the design and analysis of an SiGe high isolation single-pole double-throw (SPDT) differential absorptive switch at 24 GHz for pulsed ultra-wideband applications. Sub-100-ps envelope rise times are achieved through the use of differential current steering. The SPDT results in 1.9 dB of gain in the passband and an isolation of 35 dB while remaining matched at its ports (absorptive). The measured rise time of the RF envelope is 70 ps using a transistor with an f/sub T/ of 80 GHz and agrees with both the simulated and analytically determined values.     

单刀双掷RF MEMS开关的研究与设计

介绍了一种基于横向金属接触的DC-5GHz单刀双掷RF MEMS开关的研究与设计．横向金属接触开关包括了一套有限的共面波导（FGCPW）传输线和左右摆动的悬臂梁．为了降低开启电压,设计了一种曲折型的折叠梁结构,通过理论分析与仿真实验验证了该结构的可行性,并利用MetalMUMPs工艺加以实现．测试结果显示,该开关在5GHz处的插入损耗为0．8dB,回波损耗大于20dB,隔离度为40dB．测得最低开启电压为33V．     

Low-power InP-HEMT switch ICs integrating miniaturized 2/spl times/2 switches for 10-Gb/s systems

This paper presents a wideband cold-FET switch with virtually zero power dissipation. The use of InP HEMTs with a low R/sub on//spl middot/C/sub off/ product enables us to configure a DC-to-over-10-GHz single-pole double-throw (SPDT) switch without using a shunt FET. The series-FET configuration offers a logic-level-independent interface and makes possible positive control voltage operation in spite of using depletion-mode FETs. A miniaturized 2/spl times/2 switch using two SPDT switches yields an insertion loss of less than 1.16 dB and isolation of more than 21.2 dB below 10 GHz, which allows us to increase the scale of the switch in a single chip easily. The add-drop operation combining two 2/spl times/2 switches in a single chip and a 4/spl times/4 switch IC integrating four 2/spl times/2 switches are presented. The packaged ICs achieve error-free operation up to 12.5 Gb/s with either positive or negative logic-level input. Extremely fast switching of /spl sim/140 ps is also successfully demonstrated.     

A high-performance 40-85 GHz MMIC SPDT switch using FET-integrated transmission line structure

A compact ultra-broadband distributed SPDT switch has been developed using GaAs PHEMTs. An FET-integrated transmission line structure, where the source pad of the shunt FET has been integrated into the signal line while the drain has been grounded to a via-hole with minimum parasitic inductance, has been proposed to extend the operating bandwidth of the distributed switches. SPDT and SPST switches using this structure have been fabricated using a commercial GaAs PHEMT foundry. The SPDT switch showed low insertion loss (<2 dB) and good isolation (>30 dB) over an octave bandwidth from 40 to 85 GHz. At 77 GHz, the SPDT switch showed extremely low insertion loss of 1.4 dB and high isolation of 38 dB. The chip size was as small as 1.45/spl times/1.0 mm/sup 2/. To the best of our knowledge, this is among the best performance ever reported for an octave-band SPDT switch at this frequency range. SPST switch also showed the excellent performance with the insertion loss of 0.4 dB and isolation of 34 dB at 60 GHz.     

20 GHz band high-power onboard beam-switching circuit for multibeam satellite systems

A newly developed K-band beam-switching circuit is presented. The experimental SPDT switching circuit has a high-power handling capability of more than 10 W, low insertion loss of less than 1.2 dB, high isolation of more than 23 dB and a high-speed switching time of faster than 100 ns in the frequency band between 18.85 and 19.15 GHz.