共查询到11条相似文献,搜索用时 0 毫秒
1.
G. Guel E. A. Armour S. Z. Sun S. T. Srinivasan K. J. Malloy S. D. Hersee 《Journal of Electronic Materials》1992,21(11):1051-1056
The effects of surface preparation usinginsitu HCl etching and (NH4)2S passivation of AlxGa1-xAs episurfaces prior to regrowth by MOCVD are analyzed by deep level transient spectroscopy (DLTS), electrochemical profiling
(C-V) and room-temperature photoluminescence (PL). Four electron traps were found from the DLTS measurements; a DX-center
and three traps previously reported for oxygen-contaminated MOCVD systems. Electrical and optical measurements on quantum
well lasers containing a regrown interface in the optical confinement region are also presented. It is demonstrated that both
(NH4)2S passivation and HClin-situ etching improve the electrical and optical quality of the regrown AlxGa1-xAs interfaces, with the best results being obtained when the two methods are used in tandem. 相似文献
2.
R. Sporken Khaled M. Abuel-Rub Y. P. Chen S. Sivananthan 《Journal of Electronic Materials》1998,27(6):776-781
X-ray photoelectron spectroscopy was used to measure the valence band discontinuity at the ZnSe/ZnSxSe1−x interface as a function of alloy composition. Due to the large lattice mismatch, the experimental values have to be corrected
in order to account for strain in the ZnSe layers. We find the valence band discontinuity to vary between 0 and 0.76 eV as
a function of S content x. This result is in excellent agreement with theoretical calculations. It also shows that the conduction
band discontinuity is not negligibly small. 相似文献
3.
本文通过对比频散特性和滞回特性,计算界面态密度Dit和有效边界缺陷密度ΔNbt,分析界面缺陷和漏电流等方法,系统的研究了In0.53Ga0.47As表面氮化和硫钝化对其Al/Al2O3/InGaAs结构MOS电容特性的影响。实验结果表明,这两种方法都能够在InGaAs表明形成一层界面钝化层。相比较于未处理的样品,经过氮气等离子体处理的样品表现出较好的界面特性,得到了最小的积累区频散、滞回电压,以及良好的I-V性能。经过(NH4)2Sx处理的样品则获得了最小的平带电压区频散以及最低的界面态密度Dit=2.6E11cm-2eV-1. 相似文献
4.
L. J. Guido N. Holonyak K. C. Hsieh R. W. Kaliski J. E. Baker D. G. Deppe R. D. Burnham R. L. Thornton T. L. Paoli 《Journal of Electronic Materials》1987,16(1):87-91
Recent work indicates that the alloy (Si2)x(GaAs)1−x can be formed within the GaAs quantum well of an AlxGa1−xAs-GaAs quantum well heterostructure (QWH) and results in a shift of laser operation to higher energy. In this paper we show,
by SIMS and EDS measurements, that the Si concentration in the (Si2)x(GaAs)1−x layer far exceeds typical “doping” levels. The stability of these QWHs has been investigated with respect to thermal annealing
and Zn impurity-induced layer disordering (Zn-IILD). Data are presented showing that the (Si2)x(GaAs)1−x alloy is stable against thermal annealing unless a rich source of Ga vacancies is provided, and that relatively low temperature
Zn diffusion greatly enhances the disordering process of the alloy layer. 相似文献
5.
Jong Kyu Kim Chong Cook Kim Tae Sik Cho Jung Ho Je Joon Seop Kwak Yong Jo Park Jong-Lam Lee 《Journal of Electronic Materials》2001,30(3):170-174
We investigated the effects of surface treatments by aqua regia and (NH4)2Sx on the electrical and the microstructural changes of Pd contact on p-type GaN during annealing. The formation of a surface
oxide was suppressed by the (NH4)2Sx treatment, and S-Ga and S-N bonds with binding energy of 162.1 eV and 163.6eV were formed, degrading the structural ordering
of Pd. After 300°C annealing, the contact resistivity in the aqua regia-treated sample increased significantly. This could
be attributed to the outdiffusion of N atoms leaving N vacancies below the contact, as confirmed by the increase of the Pd
(111) plane spacing probably due to the dissolution of N atoms in Pd interstitial sites. Meanwhile, the contact resistivity
in the (NH4)2Sx-treated sample was not degraded and no change was observed in the Pd (111) plane spacing. These results suggest that S-Ga
and S-N bonds formed on (NH4)2Sx-treated GaN could act as a diffusion barrier for the outdiffusion of N atoms. The contact resistivity for the aqua regia-treated
sample decreased again, probably due to the outdiffusion of Ga as well as N atoms at 500°C. 相似文献
6.
7.
采用高温固相法合成了蓝色荧光粉KNaCa2(PO4)2:Eu2+,利用X射线衍射(XRD)和光谱技术等表征了材料的性能。结果显示,少量Eu 2+的掺入并没有影响KNaCa2(PO4)2的晶体结构。 在399nm近紫外光激发下,KNaCa2(PO4)2:Eu2+材料发 射蓝光,发射光谱为400~600nm, 主发射峰位于471nm,对应Eu2+的4f65d1→ 4f7跃迁发射;471nm发射峰,对应的激发光 谱为250~450nm,主激发峰位于399nm,与近紫外芯片匹配很好。 以365nm近紫外光作为 激发源时,KNaCa2(PO4)2:Eu2+材料的发射强度约为商用蓝色荧光粉BAM:Eu 2+的85%;而以 399nm近紫外光作为激发源时,相较于BAM:Eu2+,KNaCa2(P O4)2:Eu2+材料具有更强的发射强 度。此外,KNaCa2(PO4)2:Eu2+和BAM:Eu2+的CIE色坐标接近,均位于蓝 色区域,色坐标分别 为(0.154,0.154)和(0.141,0.112)。研究结果 表明,KN aCa2(PO4)2:Eu2+是一种在三基色白光LED中有应用前景的蓝色荧光粉。 相似文献
8.
Hafnium oxide (HfO2) films were deposited on Si substrates with a pre-grown oxide layer using hafnium chloride (HfCl4) source by surface sol-gel process, then ultrathin (HfO2)x(SiO2)1−x films were fabricated due to the reaction of SiO2 layer with HfO2 under the appropriate reaction-anneal treatment. The observation of high-resolution transmission electron microscopy indicates that the ultrathin films show amorphous nature. X-ray photoelectron spectroscopy analyses reveal that surface sol-gel derived ultrathin films are Hf-Si-O alloy instead of HfO2 and pre-grown SiO2 layer, and the composition was Hf0.52Si0.48O2 under 500 °C reaction-anneal. The lowest equivalent oxide thickness (EOT) value of 0.9 nm of film annealed at 500 °C has been obtained with small flatband voltage of −0.31 V. The experimental results indicate that a simple and feasible solution route to fabricate (HfO2)x(SiO2)1−x composite films has been developed by means of combination of surface sol-gel and reaction-anneal treatment. 相似文献
9.
S.A. Kanade 《Microelectronics Journal》2006,37(11):1302-1305
The effect of thick film Ni(1−x)CoxMn2O4 in-touch overlay on the X band resonance characteristics of thick film microstrip ring resonator is studied. The thick film overlay decreases the resonance frequency and increases the peak output. From the frequency shift the dielectric constant of the thick film Ni(1−x)CoxMn2O4 has been calculated. For the first time Ag thick film microstrip ring resonator has been used to study thick film Ni(1−x)CoxMn2O4 in the X band. 相似文献
10.
采用固相法于550℃灼烧4h,合成了Eu3+ 单掺杂的NaY(MoO4)2材料,研究了材料的 发光特性。X射线衍射(XRD)结果显示,掺杂少量杂质的材料仍为纯相的NaY(MoO4)2。以 393nm波长 近紫外光作为激发源时,NaY(MoO4)2:Eu3+可以发射主峰位于616nm波长的红色光,对应Eu3+的 5D0-7F2跃迁发射。研究发现,增大Eu3+掺杂量 时,对应材料的发射强度会逐渐增大,但是 未发现浓度猝灭现象,通过相应的衰减曲线解释了此结果。测量不同Eu3+掺杂量下 , NaY(MoO4)2:Eu3+的色坐标结果显示,色坐标基本不变,位于红色区域。上述 结果表明, NaY(MoO4)2:Eu3+在白光LEDs领域有一定的应用潜力。 相似文献