共查询到16条相似文献,搜索用时 156 毫秒
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对SiGe HBT低频噪声的各噪声源进行了较全面的分析,据此建立了SPICE噪声等效电路模型,进一步用PSPICE软件对SiGe HBT的低频噪声特性进行了仿真模拟.研究了频率、基极电阻、工作电流和温度等因素对低频噪声的影响.模拟结果表明,相较于Si BJT和GaAs HBT,SiGe HBT具有更好的低频噪声特性;在低频范围内,可通过减小基极电阻、减小工作电流密度或减小发射极面积、降低器件的工作温度等措施来有效改善SiGe HBT的低频噪声特性.所得结果对SiGe HBT的设计和应用有重要意义. 相似文献
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提出了一种硅锗异质结双极型晶体管(SiGe HBT)非准静态效应的小信号等效电路模型的参数提取方法。整个参数提取过程建立在由非准态效应的小信号等效电路推导出的一系列泰勒级数解析公式并结合参数直接法,该方法依赖于测量的S参数,不使用任何的数值优化法,参数提取结果使用CAD仿真验证。结果表明该参数提取方法简单易行,较为精确,该方法能够用到不同工艺SiGe HBT参数提取。 相似文献
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SiGe HBT小信号等效电路的参数直接提取 总被引:1,自引:0,他引:1
提出了一种求解硅锗异质结双极型晶体管(SiGe HBT)小信号等效电路模型的参数直接提取方法.整个提取过程使用由小信号等效电路推导出的一系列解析表达式,不使用任何数值优化方法.参数提取结果使用ADS软件仿真验证.结果表明,该方法简单易行,较为精确. 相似文献
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基于异质结双极晶体管(HBT)优良的微波特性,精确建模对使用该类器件进行电路设计具有重要的意义。介绍了HBT所具有的独特优越性,采用Gummel-Poon等效电路模型对常用HBT进行了小信号和大信号模型的建立,加入了寄生电感等效衬底寄生参数,测试了SiGe HBT在不同偏置下的S参数及I-V特性曲线,利用半解析方法分析了非线性模型的参数提取,讨论了本征参数和寄生参数的拟合优化。给出了关于HBT大信号和小信号等效电路模型,对比实测参数进行验证,建立模型在测试频率范围内拟合结果和测试结果吻合良好。 相似文献
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《固体电子学研究与进展》2017,(3)
基于双极结型晶体管(BJT)大信号简洁模型,采用在基极和集电极节点之间添加RC延迟噪声电流的方法对SiGe HBT高频相关噪声进行建模,将模型与现有的Transport模型、SPICE模型、Van Vliet模型进行对比来体现该建模方法的准确性,同时再对模型进行四噪声参数的提取,将提取结果与实测的结果进行比较来验证它的有效性。 相似文献
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基于SiGe HBT(异质结双极晶体管)大信号等效电路模型,建立了SiGe HBT大信号发射结扩散电容模型和集电结扩散电容模型.该模型从SiGe HBT正反向传输电流出发,研究晶体管内可动载流子所引起的存储电荷(包括正向存储电荷和反向存储电荷)的基础上,同时考虑了厄利效应对载流子输运的影响,其物理意义清晰,拓扑结构简单。将基于大信号扩散电容模型的SiGe HBT模型嵌入PSPICE软件中,实现对SiGe HBT器件与电路的模拟分析。对该模型进行了直流特性模拟分析,直流模拟分析结果与文献报道的结果符合得较好,瞬态特性分析结果表明响应度好。 相似文献
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An improved compact model for the high-frequency noise of bipolar junction transistors (BJTs) and heterojunction bipolar transistors (HBTs) is presented and implemented in SPICE3. It properly takes into account the frequency function of thermal noise in the input circuit, which is related to the real part of the input admittance. This quantity is the result of an interplay between the base resistance, the internal emitter-base capacitance, the small-signal input conductance of the intrinsic transistor, and the emitter series resistance. This requires the replacement of the noisy base resistance in SPICE by a frequency-dependent expression consisting of the appropriate SPICE parameters. A similar substitution is needed in the output circuit. For a Si/SiGe HBT these improvements lead to excellent agreement between the noise figure and device simulation results 相似文献
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Niu G. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2005,93(9):1583-1597
This paper presents an overview of the physics, modeling, and circuit implications of RF broad-band noise, low-frequency noise, and oscillator phase noise in SiGe heterojunction bipolar transistor (HBT) RF technology. The ability to simultaneously achieve high cutoff frequency (f/sub T/), low base resistance (r/sub b/), and high current gain (/spl beta/) using Si processing underlies the low levels of low-frequency 1/f noise, RF noise, and phase noise of SiGe HBTs. We first examine the RF noise sources in SiGe HBTs and the RF noise parameters as a function of SiGe profile design, transistor biasing, sizing, and operating frequency, and then show a low-noise amplifier design example to bridge the gap between device and circuit level understandings. We then examine the low-frequency noise in SiGe HBTs and develop a methodology to determine the highest tolerable low-frequency 1/f noise for a given RF application. The upconversion of 1/f noise, base resistance thermal noise, and shot noises to phase noise is examined using circuit simulations, which show that the phase noise corner frequency in SiGe HBT oscillators is typically much smaller than the 1/f corner frequency measured under dc biasing. The implications of SiGe profile design, transistor sizing, biasing, and technology scaling are examined for all three types of noises. 相似文献
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Analysis and design of wide-band SiGe HBT active mixers 总被引:1,自引:0,他引:1
The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the active mixer is taken into account by applying conversion matrix analysis. The main bandwidth-limiting mechanisms experienced in SiGe HBT active mixers performing frequency conversion of wide-band signals is discussed. The analysis is verified by computer simulations using a realistic high-frequency large-signal SiGe HBT model. An active mixer design based on the Gilbert cell topology modified for wide-band operation using emitter degenerated transconductance stage and shunt feedback load stage is discussed. Experimental results are given for an active mixer implemented in a 0.8-/spl mu/m 35-GHz f/sub T/ SiGe HBT BiCMOS process. 相似文献
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A simple compact model, suitable for circuit simulations, is derived which enables quantitative determination of the impact of neutral base recombination on the small signal ac output resistance of SiGe HBT's for arbitrary base ac drive conditions. The model uses existing SPICE parameters which are routinely extracted from bipolar transistors plus an additional model parameter which can be extracted from a proposed experimental technique involving output resistance measurements under base ac voltage and current drive conditions. The modeling approach also enables the forward and reverse base transit times to be related to transistor small signal ac output resistance by a simple analytic expression. The currently accepted expression for the r μ parameter, which is used to model neutral base recombination in the ac hybrid-π equivalent circuit, is shown to be incorrect and is replaced by a new correct expression. Numerical simulations of a SiGe HBT structure which exhibits neutral base recombination are used to verify the validity of the model 相似文献