共查询到18条相似文献,搜索用时 84 毫秒
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采用射频等离子体增强化学气相沉积(rf-PECVD)技术,在玻璃和硅衬底上沉积微晶硅(μc-Si:H)薄膜。利用拉曼光谱、AFM和电导率测试对不同射频功率下沉积的薄膜的结构特性及光电性能进行分析。研究表明:随着射频功率的增加,薄膜的晶化率和沉积速率也随之增加,而当射频功率增加到一定的程度,晶化率和沉积速率反而减小。薄膜的暗电导率与晶化率的变化情况相对应。 相似文献
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以硅烷 (SiH4 )和硼烷 (B2 H6)为气相反应先驱体 ,采用等离子体增强化学气相沉积法 (PECVD)制备出轻掺硼非晶氢硅薄膜。X射线衍射、原子力显微镜和光、暗电导测试表明 ,一定程度的硼掺杂提高了非晶氢硅薄膜的电导率 ,降低了非晶氢硅薄膜的光、暗电导比 ,并促进了非晶氢硅薄膜中硅微晶粒的生长。红外吸收谱研究预示了大量的硼原子与硅、氢原子之间能形成某些形式的复合体 ,仅有少量硼元素对P型掺杂有贡献。 相似文献
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通过硅烷、乙烯和氮气的混合气体在620下采用常压化学气相沉积(APCVD)法沉积了非晶硅薄膜,讨论了乙烯/硅烷的体积比(R=VC2H4/VsiH4)对薄膜的光学性质的影响.用Raman光谱、红外光谱和紫外-可见光光谱仪对薄膜进行表征.结果表明通过乙烯掺杂制备的薄膜样品中存在着Si-C键,在R值变化的开始阶段薄膜的光学带隙随着R值增大而增大,在R=0.1时达到最大值,然后随着R值的增大而减小. 相似文献
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硼掺杂对非晶硅薄膜微结构和光电性能的影响 总被引:2,自引:0,他引:2
以硅烷(SiH4)和硼烷(B2H6)为气相应反应先驱体,采用等离子体增强化学气相沉积法(PECVD)制备出轻掺硼非昌氢硅薄膜,X射线衍射,原子力显微镜和光,暗电导测试表明,一定程度的硼掺杂提高了非晶氢硅薄膜的电导率,降低了非晶氢硅薄膜的光,暗电导比,并促进了非晶氢硅薄膜中硅微晶粒的生长,红外吸为研究预示了大量的硼原子与硅,氢原子之间能形成某些形式的复合体,仅有少量硼元素对P型掺杂有贡献。 相似文献
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采用等离子体增强化学气相沉积(PECVD)方法在玻璃衬底上制备出非晶硅薄膜,利用正交试验法对射频功率、气体总压、硅烷比例、沉积时间、退火温度、退火时间因素进行了研究,对透过率和电阻率进行了分析,结果表明,采用PECVD法成功制备出非晶硅薄膜。正交实验表的分析得知,气体总压对透过率影响最大;硅烷比例对电阻率影响最大。制备非晶硅薄膜的优化条件为:射频功率30W、气体总压100Pa,硅烷5%、沉积时间5min、退火温度300℃、退火时间45min。非晶硅薄膜的光透过率93.18%,电阻率为13.238kΩ·cm。 相似文献
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V2O5薄膜的结构和光电性能研究 总被引:1,自引:0,他引:1
在O2/Ar混合气氛中,用脉冲磁控溅射金属V靶沉积出非晶的V2O5薄膜。对所沉积的薄膜进行450℃退火。利用X射线衍射、原子力显微镜、分光光度计和电阻测量等手段对薄膜的结构和性能进行了分析,从200nm-2500nm光谱的透射和反射测量结果,计算出薄膜的吸收系数。结果表明,V2O5薄膜纯度高,结晶好,高低温电阻变化2个量级。光学能隙为2.46eV。 相似文献
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Cerium oxide (CeO2) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10−6 Torr. The thickness of CeO2 films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850
nm. The film is highly transparent in the visible region. It is also observed that the film has low reflectance in the ultra-violet
region. The optical band gap of the film is determined and is found to decrease with the increase of film thickness. The values
of absorption coefficient, extinction coefficient, refractive index, dielectric constant, phase angle and loss angle have
been calculated from the optical measurements. The X-ray diffraction of the film showed that the film is crystalline in nature.
The crystallite size of CeO2 films have been evaluated and found to be small. The experimental d-values of the film agreed closely with the standard values. 相似文献
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Dinesh Patidar Kuldeep S. Rathore Kananbala Sharma T.P. Sharma 《Journal of Modern Optics》2013,60(18):3041-3047
A thin film of zinc selenide (ZnSe) was deposited onto a clean glass substrate using a vacuum evaporation technique. This thin film was characterized through X-ray diffraction, which indicated that the film was polycrystalline in nature. Absorption and transmission spectra of this thin film were recorded using a spectrophotometer. The energy band gap, refractive index and extinction coefficient were determined using these spectra. It was found that the energy band gap of ZnSe film was 2.55 eV. It was also observed that the refractive index and extinction coefficient of the film decreased with the increase of wavelength. The conductivity of this thin film was determined by current–voltage measurement using an electrometer over the temperature range from room temperature to 413 K. It was observed that conductivity increased with increase in temperature. This is explained on the basis of structural changes occurring due to the change in grain size and the increase in carrier density. 相似文献
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In this paper, we present preparation and characterization of Al-Sb bilayer thin films. Thin films of thicknesses, 3000/1000 Å and 3000/1500 Å, were obtained by the thermal evaporation (resistive heating) method. Vacuum annealing and rapid thermal annealing methods were used to mix bilayer thin film structure. Results obtained from optical band gap data and Rutherford back scattering spectrometry showed mixing of Al-Sb bilayer system. 相似文献
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A suitable method to determine the optical constants of high index thin films is essential for developing high efficiency
dielectric thin film devices in theuv region from 240 nm to 400 nm. A quick and accurate method is established to determine these constants. Using this method
the optical losses, refractive index, absorption coefficient and extinction coefficient of ZrO2 films prepared by the method of reactive evaporation were evaluated in theuv region. 相似文献
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I. Banerjee Neelam Kumari Mukesh Kumar A.B. Panda P.K. Barhai 《Thin solid films》2010,518(24):7240-7244
Nano structured carbon nitride thin films were deposited at different RF powers in the range of 50 W to 225 W and constant gas ratio of (argon: nitrogen) Ar:N2 by RF magnetron sputtering. The atomic percentage of Nitrogen: Carbon (N/C) content and impedance of the films increased from 14.36% to 22.31% and 9 × 10−1 Ω to 7 × 105 Ω respectively with increase in RF power. The hardness of the deposited films increased from 3.12 GPa to 13.12 GPa. The increase in sp3 hybridized C-N sites and decrease of grain size with increase in RF power is responsible for such variation of observed mechanical and electrical properties. 相似文献