常压化学气相沉积法制备氮化钛薄膜结构和节能性能研究

在普通玻璃基板上利用常压化学气相沉积法在580℃条件下制备得到了氮化钛薄膜。对薄膜的结晶性能、断面形貌、方块电阻以及光学透过率和反射率进行了研究。随着沉积时间的增长,薄膜由单层结构变为一种特殊的双层结构,这种双层结构的形成是沉积过程中气相成核机制引起的。光谱结果显示制备得到的薄膜具备一定的阳光控制性能。然而,双层薄膜的红外反射率随沉积时间的增长迅速降低,影响了其阳光控制性能。     

射频等离子体沉积非晶碳氢薄膜及其阻隔性能

采用射频辉光放电等离子体化学气相沉积系统,,以甲烷和氩气作为工作气体在PET(聚对苯二甲酸乙二醇酯)片和玻璃片基上沉积了非晶碳氢薄膜,利用傅立叶变换红外光谱(FTIR)对碳氢薄膜的结构进行研究,并且通过透水蒸汽相对比较实验检测了PET上沉积碳氢膜的阻隔性能,详细讨论了沉积工艺参数对碳氢薄膜结构和阻隔性能的影响.实验结果证明,沉积的薄膜越厚,碳氢膜的含量越高,阻隔性能越好,沉积碳氢膜的PET阻隔性比原始PET都有明显提高,当膜厚达900nm时,阻水蒸汽透过率可提高7倍.     

气调性包装材料的制备及其性能研究

采用单体六甲基二硅氮烷(HMDS)和氧气作为反应气体,采用等离子体增强化学沉积的方法在壳聚糖、PET等基材上沉积薄膜。在薄膜的制备工艺中,改变各种工艺参数制备了阻隔薄膜,通过分析沉积薄膜厚度、傅里叶红外光谱、水蒸气和氧气的透过率,探讨了薄膜性能的变化。实验证明:等离子体输入功率以及单体的比例对薄膜的选择透过性有很大的影响,利用这种工艺可以很好地改善薄膜的气体透过性。最后对薄膜的选择透过性的机理进行了初步的探讨。     

SiOx/PET复合薄膜的力学性能及阻隔性能

目的基于氧化硅(SiO_x)镀层优异的性能,研究不同厚度的SiO_x层对SiO_x/PET复合薄膜力学性能和阻隔性能的影响,以期得到性能较优的SiO_x/PET复合薄膜。方法以自制的聚对苯二甲酸乙二醇酯(PET)薄膜为基材,采用等离子体增强化学气相沉积法沉积得到SiO_x层厚度分别为40,150,230,320 nm的SiO_x/PET复合薄膜,并进行傅里叶变换红外线光谱分析、力学性能和阻隔性能测试,以及薄膜表观形貌分析。结果沉积SiO_x层后,SiO_x/PET复合薄膜拉伸强度和断裂伸长率随SiO_x层厚度的增大先增大后减小,氧气透过率和水蒸气透过率则出现明显衰减而后逐渐平缓的趋势。SiO_x层厚度达150~230 nm时,复合薄膜的力学性能和阻隔性能表现较优,拉伸强度、断裂伸长率、氧气透过率以及水蒸气透过率分别提高了约25.0%,20.9%,79.3%,77.3%。结论适宜厚度的SiO_x层可以使得SiO_x/PET复合薄膜同时具备较优的力学性能和阻隔性能。     

柔性衬底上AZO薄膜的附着力特性研究

使用脉冲激光沉积(PLD)方法在柔性衬底PMMA和PET上制备了具有高c轴择优取向的AZO(ZnO∶Al)薄膜。通过X射线衍射(XRD)、紫外可见分光光度计(UV-Vis)和纳米划痕仪,研究了在不同衬底下生长的薄膜样品的晶体结构、光学性能和附着力。结果表明,两种柔性衬底上生长的AZO薄膜都是单一的ZnO六方相,可见光范围内光学透过率均大于85%;PMMA、PET衬底上AZO薄膜的临界载荷数值分别为31.31mN和16.97mN,PET衬底上ITO薄膜的临界载荷数值为40.55mN。     

ITO-Ag高透明柔性低辐射膜光学性能研究

本文介绍了基于PET基材，由ITO与Ag组成的单Ag层和双Ag层高透明低辐射膜系及其光谱特性，并在PET基材上通过直流磁控溅射制备了在几乎整个可见光波段透过率大于75%，低反射且能用于汽车前挡的高隔热贴膜。     

不同沉积温度下V掺杂的TiN薄膜的结构和性能

利用常压化学气相沉积法(APCVD)在玻璃基板上沉积制备了钒(V)掺杂的氮化钛(TiN)薄膜.利用X射线衍射仪(XRD)、光电子能谱仪(XPS)、扫描电子显微镜(SEM)、四探针电阻仪和分光光度计等对TiN薄膜的结构、形貌、以及光电性能进行了分析.结果表明,薄膜呈典型的粒状结构.随着沉积温度的升高,薄膜的结晶强度不断增...     

沉积参量对硼碳氮薄膜光透过性质的影响

采用射频磁控溅射技术,用六角氮化硼和石墨为溅射靶,以氩气(Ar)和氮气(N2)为工作气体,在玻璃衬底上制备出硼碳氮(BCN)薄膜.通过改变氮气分压比、衬底温度及沉积时间,研究了沉积参量对薄膜光透过性质的影响.利用X射线光电子能谱(XPS)、原子力显微镜(AFM)及可见-近红外透过光谱对薄膜进行了表征.实验结果表明,所制备薄膜在400～1000nm波段具有较高透过率.并且沉积参量对BCN薄膜的透过性能有很大影响,适当改变沉积参量能获得透过率高于90%的BCN薄膜.在固定其它条件只改变一个沉积参量的情况下,得到制备具有较高透过率的BCN薄膜的最佳沉积条件:氮气分压比为1/3、沉积温度为300℃、沉积时间为1h.     

等离子浸没离子注入沉积纳米TiN薄膜的机械性能研究

采用等离子体浸没离子注入沉积(PⅢ-D)在不锈钢基底上合成TiN薄膜。对沉积TiN薄膜后的不锈钢试样进行拉伸变形实验,扫描电子显微镜(SEM)原位观察表明在较大塑性变形量下氮化钛薄膜没有剥落和裂纹出现。采用划痕法测得薄膜与基体间有较强的结合力。薄膜的纳米压痕测试显示出很高的纳米硬度和弹性模量值。通过对合成TiN薄膜的TEM结构测试、AFM表面观察、AES成分结果分析,认为该合成薄膜的纳米级晶粒尺寸、致密的表面质量以及成分沿深度的分布是其具有优异的抗塑性变形性能以及高的结合强度的原因。     

在室温条件下制备高质量纳米结构TiN薄膜研究

在室温条件下,利用磁过滤等离子体在单晶硅和不锈钢表面上制备了性能优异的纳米结构TiN薄膜.运用原子力显微镜和掠角入射X射线衍射仪对其结构与形貌进行了表征,利用纳米压痕仪测量了TiN薄膜的硬度和弹性模量.结果表明:TiN薄膜表面光滑,致密,无柱状晶;TiN晶粒的平均尺寸为50nm,薄膜硬度达50 GPa,是传统CVD和PVD技术沉积氮化钛的两倍多;XRD衍射试验表明,纳米TiN的衍射角都普遍向小角度移动,TiN晶粒沿(111)择优生长.     

镀TiN薄膜的保温节能遮阳玻璃

镀有 TiN 薄膜的玻璃是一种新的“热镜”材料。当 TiN 薄膜厚度大于90nm 时,它对红外线的反射率大于75%。小样试验结果表明:使用镀 TiN 的窗玻璃比用普通玻璃节省取暖能源50%以上。此外,TiN 薄膜与玻璃的结合力强,它不被酸、碱、海水所腐蚀,时延性好。     

新型铁电薄膜底电极TiN的结构与电性能研究

自制了导电的TiN薄膜底电极,并在其上制备了铁电钽酸锂薄膜,测试了TiN薄膜电阻随热处理温度变化的关系,以及TiN底电极上钽酸锂薄膜的介电和漏电特性.实验结果表明,当热处理温度低于700℃时,TiN薄膜的电阻率小于0.004QΩ·cm,具有良好的导电性,可用作钽酸锂薄膜底电极;TiN底电极上钽酸锂薄膜的漏电电流大于Pt衬底上钽酸锂薄膜的漏电电流;N2气氛下在TiN底电极上结晶的钽酸锂薄膜的介电损耗远大于O2气氛下结晶的钽酸锂薄膜的介电损耗;氧缺位是TiN底电极上钽酸锂薄膜介电损耗大和漏电大的主要原因.     

High energy xenon ion beam assisted deposition of TiN film and its industrial application

TiN films have been synthesized by ion beam assisted deposition employing xenon ions with an energy of 40 keV. The formed TiN films were investigated systematically in respect of surface morphology, composition, structure and mechanical properties. Then, they were applied to surface protection of scoring dies. Atomic force microscopy and interferometric observation showed that the TiN film is relatively smooth. Rutherford backscattering spectroscopy analysis indicated that few xenon atoms are retained in the film. It was found by transmission electron microscopy and X-ray diffraction experiments that the formed TiN is a nanocrystal (< 10 nm) film and exhibits slightly (200) preferred orientation. An ultra low load microhardness indentor system was used to examine the plastic property of the film and a hardness of 2300 kgf mm^–2 was calculated from the measured data. Scratch tests showed that the adhesion of TiN film deposited by ion beam assisted deposition at ambient temperature is superior to that of high temperature physical vapour deposited (PVD) TiN film. Both a pin-on-dick tribotest and SRV wear test revealed that the wear resistance of the specimen can be greatly improved by TiN coating. A five times increase of service life of different scoring dies could be obtained by protection of TiN coating.     

Interfacial Bonding Strength of TiN Film Coated on Si3N4 Ceramic Substrate

The fraction of TiN/Si3N4 in the cross section was observed with scanning electric microscope (SEM), and residual stresses of TiN coated on the surface of Si3N4 ceramic were measured with X-ray diffraction (XRD).The hardness of TiN film was measured, and bonding strength of TiN film coated on Si3N4 substrate was measured by scratching method. The formed mechanism of residual stress and the failure mechanism of the bonding interface in the film were analyzed, and the adhesion mechanism of TiN film was investigated preliminarily. The results show that residual stresses of TiN film are all behaved as compressive stress, and TiN film is represented smoothly with brittle fracture, which is closely bonded with Si3N4 substrate. TiN film has high hardness and bonding strength of about 500 MPa, which could satisfy usage requests of the surface of cutting Si3N4 ceramic.     

Interracial Bonding Strength of TiN Film Coated on Si3N4 Ceramic Substrate

The fraction of TiN/Si3N4 in the cross section was observed with scanning electric microscope （SEM）, and residual stresses of TiN coated on the surface of Si3N4 ceramic were measured with X-ray diffraction （XRD）.The hardness of TiN film was measured, and bonding strength of TiN film coated on Si3N4 substrate was measured by scratching method. The formed mechanism of residual stress and the failure mechanism of the bonding interface in the film were analyzed, and the adhesion mechanism of TiN film was investigated preliminarily. The results show that residual stresses of TiN film are all behaved as compressive stress, and TiN film is represented smoothly with brittle fracture, which is closely bonded with Si3N4 substrate. TiN film has high hardness and bonding strength of about 500 MPa, which could satisfy usage requests of the surface of cutting Si3N4 ceramic.     

等离子体基离子注入制备TiN膜的成分结构

采用Ti、N等离子体基离子注入和先在基体表面沉积纯钛层然后离子注氮混合两种方法在铝合金基体上制备了TiN膜.利用XPS分析了两种方法制备TiN薄膜的成分深度分布和元素化学价态,并用力学性能显微探针测试对比了TiN膜的纳米硬度.研究表明:两种方法制备的薄膜均由TiN组成,Ti、N等离子体基离子注入薄膜中Ti/N≈1.1,而离子注入混合薄膜中Ti/N≈1.3,Ti、N等离子体基离子注入薄膜表面区域为TiN和TiO2的混合组织,TiN含量多于TiO2,离子注入混合薄膜表面主要是TiO2;Ti、N等离子体基离子注入所制备的薄膜的纳米硬度峰值为12.26 GPa,高于离子注入混合的7.98 GPa.     

TiN镀层对真空系统释气率的影响概述

抑制射频真空系统表面二次电子倍增的一种常用方法是在系统内表面镀TiN薄膜,因为TiN薄膜具有较低的二次电子发射率.但对于真空应用来说,必须关注TiN薄膜的真空释气率问题.本文综述了国内外在TiN镀层真空特性方面的研究现状,其中涉及TiN镀层低释气率的物理机制、产生低释气率TiN薄膜的最优化镀膜条件以及两种常用镀膜方法的比较.     

Influence of TiN-nanolayered insertions on microstructure and mechanical properties of TiSiN nanocomposite film

TiN nanolayers with different thicknesses were inserted in TiSiN nanocomposite film by magnetron-sputtering technique. The influences of TiN insertion nanolayers with different thicknesses on microstructure and mechanical properties of TiSiN film were investigated X-ray diffraction, high-resolution transmission electron microscopy, scanning electron microscopy, and nanoindentation techniques. When the TiN insertion layer thickness is <0.5 nm, TiN nanolayers can coordinate the misorientations between TiN nanocrystallites in adjacent TiSiN layers, leading to the transformation from the nanocomposite structure with TiN nanocrystallites encapsulated by SiN _x interfacial phase into columnar crystal structure, and disappearance of the strengthening effect from the nanocomposite structure. When the TiN insertion layer thickness increases to 1.0 nm, the film is strengthened with the epitaxial growth structures between TiSiN and TiN layers. As the TiN insertion layers further thicken, the hardness and elastic modulus evidently decrease, which can be attributed to the breakage of epitaxial growth structures between TiSiN and TiN layers.     

TiN/Ti多层膜调制比对摩擦磨损行为影响的研究

考察了TiN/Ti多层膜调制比对其摩擦磨损行为的影响. 采用磁过滤阴极弧沉积的方法制备了具有不同调制比的TiN/Ti多层膜, 用扫描电镜和透射电镜对其层状结构及子层结构进行了观察和分析. 用纳米压痕和SRV摩擦磨损试验的方法, 对多层膜进行了纳米硬度和弹性模量测试以及摩擦磨损实验. 结果表明, 所制备的TiN/Ti多层膜层状结构清晰, 与基底结合良好, 调制比对多层膜的硬度和磨损特性影响较大, 而对摩擦系数的影响却不明显. 结合实验结果, 讨论了硬度与弹性模量的比值(H/E值)对TiN/Ti多层膜耐磨性的影响.