Femtosecond self- and cross-phase modulation in semiconductor laseramplifiers

We present detailed derivation of our new model for femtosecond pulse amplification in semiconductor laser amplifiers. The various dynamic nonlinear terms of gain compression and associated self-phase modulation are derived semiphenomenologically, and are discussed physically. Included are the effects of carrier depletion, carrier heating and spectral hole-burning, as well as linear and two photon absorption and the instantaneous nonlinear index. Additionally, we account for dynamically changing gain curvature and slope. We apply the theory to strong signal cross-phase-cross-gain modulation experiments with ~500 fs pulses in a broad area GaAs amplifier and show that the model accurately describes the observed complex phenomena. We also present experimental results on single beam strong signal amplification in two different quantum-well amplifiers using 150-200 fs duration pulses. For such pulse lengths, carrier heating becomes an integrating nonlinearity and its self-phase modulation is similar to that due to carrier depletion. Additionally, since the pulse spectrum is broad, the gain slope and curvature shift and narrow it. The resultant spectral distortions are very different than observed (and modeled) earlier for the ~500 fs pulses. The model is again able to correctly describe the evolution of these ultrashort pulses, indicating that it remains valid, even though pulse durations approach the intraband relaxation time     

Frequency response of strain-compensated InGaAsN-GaAsP-GaAs SQW lasers

We investigate the below and above threshold frequency response of InGaAsN lasers with different nitrogen content. This is accomplished through detailed analysis of the small signal modulation response of the laser diodes using a comprehensive model based on rate equations and that incorporates the effect of parasitics. For below threshold conditions the model is instrumental in separating the contributions from the parasitics (more severe at low bias) and carrier recombination (predominant at higher bias) to the measured carrier lifetime. It is found that the addition of nitrogen reduces the recombination lifetime, mainly as a result of a four-fold increase in monomolecular recombination which predominates even near threshold. For bias above threshold the analysis compares electrical versus optical modulation frequency responses and concludes that resonance frequency and damping extracted from the electrical modulation responses are significantly influenced by the device parasitics. Instead, it is shown that optical modulation traces allow extraction of a relaxation frequency that is shaped only by the stimulated processes in the laser active region. Even in this case, the damping is found to be affected by the parasitics. When compared with nitrogen free lasers, a reduction in the resonance frequency is observed, while the damping is not altered. The former arises from a factor of /spl sim/2.5 decrease in the combined effect of the differential gain and carrier transport parameters. The latter reflects the more significant contribution of the parasitics to the damping.     

Reduction of second- and third-order harmonic distortion bynonlinear absorption in gain-coupled distributed-feedback laser diodes

We have calculated the characteristics of second- and third-order harmonic distortion in gain-coupled distributed feedback (DFB) lasers using a set of three rate equations. In these calculations, the relaxation oscillation, nonlinear gain compression, and nonlinear loss compression are taken into account. We have found that modulation distortion due to nonlinear gain compression is reduced significantly in the gain-coupled DFB laser of absorptive-grating type. This improvement occurs because gain compression is compensated by loss compression within the grating     

Experimental and theoretical study of semiconductor laser dynamics due to filtered optical feedback

We report experimental results on the nonlinear dynamical response of a semiconductor laser subjected to time-delayed (>5 ns), frequency selective, optical feedback from a Fabry-Pe/spl acute/rot interferometer type of filter. Three regimes of interest, based on the relative value of the filter bandwidth with respect to the relevant laser parameters (relaxation oscillation frequency and external cavity mode spacing), are identified, viz. a wide filter case, an intermediate filter width case, and a narrow filter case. The dynamical response of the laser is shown to be quite different in each of these regimes. The principal results are 1) the laser's linewidth enhancement factor, coupled with the nonlinear response of the filter, can be exploited to induce nonlinear dynamics in the instantaneous optical frequency of the laser light on a time scale related to the time-delay of the feedback, 2) a mode mismatch effect which arises from a detuning between the filter center frequency and the nearest external cavity mode and manifests itself in a reduction of the maximum light available for feedback, and 3) a reduction in, or even disappearance of, relaxation oscillations in the laser dynamics when a filter of appropriate width is chosen. More generally, it is observed that certain dynamics that occur due to unfiltered optical feedback may be suppressed when the feedback light is spectrally filtered.     

A generalized family of memristor‐based voltage controlled relaxation oscillator

Recently, memristive oscillators are a significant topic in the nonlinear circuit theory where there is a possibility to build relaxation oscillators without existence of reactive elements. In this paper, a family of voltage‐controlled memristor‐based relaxation oscillator including two memristors is presented. The operation of two memristors‐based voltage relaxation oscillator circuits is demonstrated theoretically with the mathematical analysis and with numerical simulations. The generalized expressions for the oscillation frequency and conditions are derived for different cases, where a closed form is introduced for each case. The effect of changing the circuit parameters on the oscillation frequency and conditions is investigated numerically. In addition, the derived equations are verified using several transient PSPICE simulations. The power consumption of each oscillator is obtained numerically and compared with its PSPICE counterpart. Furthermore, controlling the memristive oscillator with a voltage grants the design an extra degree of freedom which increases the design flexibility. The nonlinear exponential model of memristor is employed to prove the oscillation concept. As an application, two examples of voltage‐controlled memristor‐based relaxation oscillator are provided to elaborate the effect of the reference voltage on the output voltage. This voltage‐controlled memristor‐based relaxation oscillator has nano size with storage property that makes it more efficient compared with the conventional one. It would be helpful in many communication applications.     

南阳电厂电力系统稳定器投运引起振荡的分析

电力系统稳定器(PSS)是抑制电网低频振荡的有效手段.南阳电厂在已完成参数整定的PSS投运时激发了低频增幅振荡.通过对PSS工作原理的详细分析,找出了振荡的原因,并对输入PSS的转速信号参数进行了调整.试验表明,PSS 不仅要求补偿参数正确,还要求其转速信号输入通道的增益不能太大,才能有效地抑制低频振荡.     

High-power continuous-wave intracavity frequency-doubled Nd:GdVO/sub 4/-LBO laser under diode pumping into the emitting level

The continuous-wave high power laser emission of Nd:GdVO/sub 4/ at the fundamental wavelength of 1.06 /spl mu/m and its 531-nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal is investigated under pumping by diode laser at 808 nm (on the /sup 4/I/sub 9/2//spl rarr//sup 4/F/sub 5/2/ transition) and 879 nm (on the /sup 4/I/sub 9/2//spl rarr//sup 4/F/sub 3/2/ transition). It is shown that, in spite of a lower absorption at 879 nm, the infrared emission is comparable under these two wavelengths of pump. The green emission performances were, however, improved by the 879 nm pump: 5.1 W at 531 nm with M/sup 2/=1.46 and 0.31 overall optical-to-optical efficiency was obtained from a 3-mm-thick 1-at.% Nd:GdVO/sub 4/ laser medium and a 10-mm-long LBO nonlinear crystal in a Z-type cavity for 16.5 W pump power. In similar conditions, the maximum green power for the 808 nm pump was 4.4 W, with 0.26 overall optical-to-optical efficiency and M/sup 2/=3.40 beam quality; at this pump wavelength the green emission shows evident saturation for pump power in excess of 9.9 W. This behavior is connected with the enhanced heat generation under 809-nm pumping, as evidenced by the increased thermal lensing of the fundamental emission. A careful alignment of the laser enables emission almost free of chaotic intensity fluctuations.     

一种新型电力系统稳定器模型研究

针对电力系统低频振荡问题,本文提出一种新型低频段抑制增强的电力系统稳定器模型。该模型基于发电机机械运动模型,转速变化量经微分环节相位超前,加速功率变化量相位超前Δω轴90°,解决了PSS2B相位补偿主要为超前环节而造成的低频段增益小于高频段的问题。RTDS试验证明,该模型能够增强低频段系统阻尼,提高低频段有功振荡的抑制效果。     

汽轮机调速系统对电网低频振荡的影响

近年来电力系统中频繁出现汽轮机调速系统引发的低频振荡,为了探明该类低频振荡的原因,分析了调速系统对电力系统动态稳定的影响。建立了包含汽轮机调速系统的单机无限大系统模型,研究了调速系统增益对系统低频振荡模态的影响。研究结果表明,汽轮机调速系统增益虽然不改变调速系统阻尼特性分界频率,但是却对系统低频振荡模态频率产生影响,从而改变调速系统对低频振荡的阻尼性质。当调速系统增益超过临界增益时会诱发低频振荡现象,时域仿真和频域分析结果验证了上述结论的正确性。     

Very high characteristic temperature and constant differentialquantum efficiency 1.3-μm GaInAsP-InP strained-layer quantum-welllasers by use of temperature dependent reflectivity (TDR) mirror

A very high characteristic temperature T₀ of 150 K (25-70°C) or 450 K (25-50°C) and an almost constant differential quantum efficiency operation in the temperature range of 25-70°C were achieved in 1.3-μm GaInAsP-InP strained-layer quantum-well (SL-QW) lasers by use of a novel temperature dependent reflectivity (TDR) mirror composed of multiple quarter-lambda thickness α-Si-SiOx dielectric films with quarter-lambda shift in the vicinity of center portion, The mechanism of high T₀ and constant differential quantum efficiency were explained using the structural parameters, transparent current density and gain coefficient of a SL-QW laser that are derived experimentally. The effect of TDR mirror was confirmed by measuring the temperature dependence of net gain of a SL-QW laser with TDR mirror. It was found that less temperature dependent net gain due to the decrease of mirror loss with temperature played an important role for improving the temperature characteristics of threshold current. Almost constant differential quantum efficiency over a wide temperature range is attributed to the increase of the facet reflectivity with temperature     

用TCSC装置抑制电力系统低频振荡的研究

可控串联补偿(TCSC)对于阻尼电力系统低频振荡具有重要意义。文章重点从工程应用方面分析了TCSC装置阻尼低频振荡的系统结构与工作原理,确定了阻尼控制输入量的选取原则,并在有无功率振荡阻尼的情况下进行了动模实验,从而验证了TCSC阻尼低频振荡的效果。     

大干扰下主导低频振荡模式的鉴别

Prony方法是获取系统振荡模式特征的一种非常有效的方法,它可通过给定输入信号下的响应直接估计系统的振荡频率、衰减、幅值和初相位。基于Prony算法,作者提出了振荡模式能量级的概念,用于鉴别电力系统大干扰下的主导低频振荡模式,在8机36节点系统中应用本文所提方法准确识别出了主导低频振荡模式,验证了该方法的正确性,并与正则形理论研究低频振荡模式间的非线性相关作用的结果进行了比较,再次验证了大干扰中主导低频振荡模式对系统动态特性和稳定性有重要影响这一观点的正确性。     

逆变器供电下异步电动机低频振荡现象的研究

对PWM电压源逆变器供电下异步电动机开环控制下低频振荡进行了模拟,分析了低频振荡的原因,提出了用逆变器输入电流ⅠD中的负电流分量间隔时间是否大于1／Fc（Fc是PWM信号的载波频率）来作为低频振荡的判据。     

Diode array pumped kilowatt laser

The diode array pumped kilowatt laser (DAPKL) has demonstrated more than an order of magnitude increase in brightness and average power for short pulse diode-pumped solid-state lasers since its inception in 1991. Significant advances in component technology have been demonstrated, including: development of a diffusion bonding process for producing large slabs of Nd:YAG laser material. Phase conjugation by stimulated Brillouin scattering (SBS) has been demonstrated with high reflectivity and fidelity in a simple focused geometry with input powers of 100 W. Pulse energies at 1.06 μm of 10 J have been demonstrated with a beam quality of 1.5 times diffraction limited at the 500-W level. An average power of 875 W at 100 Hz has been obtained. Efficient frequency doubling with a record power of 165 W has been demonstrated with 5 J per pulse at 0.53 μm. Work is ongoing to enclose the system in a compact brassboard with improved performance and long term stability     

Dynamic model of tapered semiconductor lasers and amplifiers based on transmission-line laser modeling

We have proposed a new dynamic model for both tapered laser oscillator and laser amplifier structures based on transmission-line laser modeling. The internal laser processes are represented in terms of microwave circuit theory, giving additional insight to the operation of the laser. The model is semianalytical to improve computational efficiency and is in time domain to allow inclusion of nonlinear effects. Simulation results agree with published results, proving the validity of the model. The dynamics of picosecond pulse amplification in tapered amplifier structures have been studied using the model, taking into account the effects of pulse energy and residual reflectivity. It has been found that residual reflectivity can give an almost undistorted amplified pulse, at the expense of pulse energy gain.     

Low‐noise blue light generation of intracavity frequency‐doubled LD‐pumped Cr:LiSAF laser by single‐mode method

We have demonstrated the production of low‐noise blue SHG (Second Harmonic Generation) light by single‐mode oscillation in an intracavity frequency‐doubled laser diode (LD)‐pumped Cr‐doped LiSrAlF₆ (Cr:LiSAF) solid‐state laser. The SHG crystal was LiB₃O₅ (LBO). A birefringent filter and an etalon plate were used for the single‐mode Cr:LiSAF laser oscillation wave. A maximum blue SHG output power of 32 mW was obtained by using a 1‐mm‐thick birefringent filter and an etalon plate 200 μm thick with 20% reflectivity. The oscillation wavelength varied by 0.24 pm/hPa in response to changes in atmospheric pressure. A long‐term stability of 300 hours was obtained with the cavity enclosed in a barostat. © 2001 Scripta Technica, Electr Eng Jpn, 138(1): 49–55, 2002     

Simulations of boundary layers and point defects in coupled VCSEL arrays

The inherent gain dependence on carrier depletion and on the lateral cavity interactions differentiates active photonic lattices from passively coupled models, employing a given complex gain profile. This paper addresses coupled vertical-cavity surface-emitting laser array effects due to finite boundaries and the possibility of individual bias failures, of interest for practical applications. The "cold-cavity" characteristic parameters are assumed identical, focusing on biasing defects and site vacancies. Analysis and numerical simulations based on the tight-binding approximation show that phase-locking persists in finite arrays. Self-regulation of the edge cavity density and power generate boundary layers of differentiated cavity operation values. The inter-cavity phase shift remains nearly uniform, with a small superimposed linear slope caused by cross-cavity reflection interference from distributed Bragg reflectors. Phase locking is robust against partial or complete failure to lase for individual cavity sites, or even entire rows, due to biasing errors.     

High third-order-intercept series-FET driver power amplifier [Application Notes]

An amplifier is called linear when the output power increases linearly with the input power. As input power increases, the amplifier transfer function becomes nonlinear, and a stage is reached where the output power does not increase with the input power. This happens because of transistor current and voltage clipping and the variations of transistor transconductance and junction capacitances with input RF power. One of the measures of nonlinearity of amplifiers is intermodulation distortion (IMD). When more than one carrier frequency is present in a nonlinear amplifier, multiple sidebands will be generated as intermodulation products due to mixing in the nonlinear device [1]-[8].     

基于模态分析与相对增益矩阵的多STATCOM交互影响分析与仿真

STATCOM以快速无功控制稳定电压,但缺乏协调配合会产生交互影响。采用模态分析与相对增益矩阵(relative gain array,RGA)结合的方法进行交互影响分析,借助精确反馈线性化改进内层电流控制。建立多STATCOM系统的状态空间表达式,通过模态分析确定系统出现负阻尼振荡模式的控制器参数;结合状态空间表达式系数矩阵,求解相对增益矩阵,研究输入信号及电气距离与交互影响的关联机理;结果表明STATCOM控制器比例增益设置会引入新的局部振荡模式,引起低频功率振荡;而参考电压与电气耦合程度是负交互影响产生的重要因素。针对传统内环电流控制,利用非线性控制理论对其改进,设计输入状态反馈线性化控制器;借助线性二次型控制理论确定状态反馈矩阵,推导最优控制律,实现受控状态对期望状态的最优逼近;仿真结果表明非线性控制器能有效改善参考信号阶跃引起的功率波动,显著提高系统阻尼。     

FDTD simulation of the nonlinear gain dynamics in active optical waveguides and semiconductor microcavities

We use the finite-difference time-domain (FDTD) solution of the full-wave vectorial Maxwell-Bloch equations for a two-level quantum system developed earlier , to investigate the nonlinear gain spatio-temporal dynamics of active optical waveguides and semiconductor microcavities. The numerical model has been successfully validated against density matrix theory of gain saturation in homogeneously broadened two-level quantum systems for optical waveguides containing resonant gain nonlinearities. The semiclassical equations have been extended employing the Langevin formalism to account for the quantum noise and the spontaneous emission. We have numerically demonstrated the time evolution of the coherent oscillations build up at the output laser facet identifying the lasing threshold and the fast relaxation oscillations until the settlement of a steady-state emission. Our simulation predictions of the lasing wavelength in a number of vertical-cavity surface-emitting laser geometries, when the spontaneous emission is the only source of radiation, agree very well with standard results and, thus, allow us to infer and subsequently optimize important emission characteristics, such as the spontaneous emission rate, the laser line shape, and the relaxation oscillation frequencies and decay rates.