基于单根氧化锌纳米线的场效应管的光电特性研究

本文介绍了一种基于单根氧化锌纳米线场效应管的制备方法,用XRD和SEM分析了样品的结构和形貌,测试了它的输出特性曲线和转移特性曲线.当Vds=2 V时,测得场效应管的开启电压Vgt=-16.2 V;计算得到低频跨导gm=46.6nS.在Vgs=0 V时,测得一维ZnO纳米线的载流子浓度n=1.15×108 cm-1,电子迁移率μe=14.4 cm2/Vs,电导率σ=0.26 Ω-1 cm-1.该场效应管的上限截止频率fH=1585 Hz,漏源极间电容C=25.4 pF.本文还对基于单根氧化锌纳米线的场效应管的光电灵敏度和光电时间响应进行了测试分析.     

合成和表征NiFe2O4纳米线阵列

采用真空灌注结合溶胶-凝胶和氧化铝模板法,在多孔氧化铝模板中制备了平均直径为50 nm的NiFe2O4纳米线阵列.X射线衍射结果显示所制备的纳米线是纯相的NiFe2O4纳米线,透射电镜和电子衍射的结果显示已制备的纳米线是多晶的且表面光滑,场发射扫描电镜图片显示纳米线是大面积且平行有序的、纳米线的长度和所用的氧化铝模板的厚度相当.磁测量的结果显示此纳米线阵列有形状各向异性,同块状材料相比矫顽力有所增强.对纳米线的生长机理做了简单的讨论.     

Perpendicular GMI Effect in Meander NiFe and NiFe/Cu/NiFe Film

We have evaluated the perpendicular giant magnetoimpedance effect (GMI) in both NiFe and NiFe/Cu/NiFe films with meander geometry in the $>$1 MHz high-frequency range. With the magnetic field, the perpendicular GMI effect shows an intense GMI peak value at a certain field. This effect is comparable to the longitudinal GMI effect in both profile and peak value amplitude. The experimental results correspond well with the predictions of a single-domain rotational magnetization model. These findings demonstrate that the deflection of the anisotropy to a perpendicular direction plays an important role in the perpendicular GMI effect.      

Dark Count Suppression in Superconducting Nanowire Single Photon Detectors

One of the important performance parameters of superconducting nanowire single photon detectors (SNSPD) is the dark count rate. Dark counts are related to thermally-activated hopping of magnetic vortices across the nanowire. We present an experimental analysis of how the thermal coupling of the NbN SNSPD to the heat sink affects the dark count rate. It was found that the rate decreases with the increase in coupling strength while the detection efficiency remains almost constant.     

Scientists Make Single-Mode Laser Out of a Single Nanowire

Although lasers come in all shapes and sizes,one of the most recent laser designs is especially intriguing,since it’s madeof just a single nanowire. Due to its small size and simplicity,the single-nanowire laser could be used as a nanoscale coherentlight source for applications in optical communications,sensing,and signal processing.     

Influences of Extra Magnets on Giant Magnetoimpedance Effect in Amorphous Wires

Adjacent extra magnets can induce an additional impedance to an amorphous wire. We have studied the additional impedance passing through a magnetic ring and found that it is related to the electromagnetic characteristics, shapes, and locations of the extra magnet and the frequency of the ac excitation, regardless of the amorphous material properties and the extra magnetic field conditions. According to our theoretical analysis, the additional impedance severely reduces the magnetoimpedance change of the amorphous wire and destroys the giant magnetoimpedance characteristic. We therefore propose a return structure to diminish the additional impedance. Our experiments measured the impedances of an amorphous wire, a Cu wire, and the return structure with a variety of extra magnetic fields. The results confirmed the characteristics of the additional impedance and verified the effectiveness of the return structure.      

钴基软磁非晶合金的巨磁阻抗效应研究进展

介绍了钴基软磁非晶合金丝与薄带的制备方法,重点讨论了频率、磁各向异性等因素对巨磁阻抗效应的影响.对非晶合金的巨磁阻抗效应传感器的应用进行了展望.     

Fe84Zr7B9薄带中的巨磁阻抗效应

详细研究了Ｆｅ８４Ｚｒ７Ｂ９薄带中的巨磁阻抗效应。研究了退火工艺对巨磁阻抗效应的影响。发现６００℃退火２０ｍｉｎ的Ｆｅ８４Ｚｒ７Ｂ９薄带在１．５ＭＨｚ下的（Ｚｍａｘ（Ｈ）－Ｚ（５２００Ａ／ｍ）／Ｚ（５２００Ａ／ｍ）达到１５２％。同时我们还测量磁导率随磁场的变化关系,研究了不同退火工艺下材料的磁导率,发现材料磁导率值与巨磁阻效应的大小紧密相关。     

Giant Magnetoimpedance Effect: Concept and Prediction in Amorphous Materials

Giant magneto impedance (GMI) effect was experimentally measured on as-cast, post-production and coated with chemical technique amorphous wire and ribbon materials consisted of varied chemical composition over a frequency range from 0.1 to 8 MHz under a static magnetic field between ?8 and +8 kA/m. The results show that each amorphous sample has a certain operational frequency for which the GMI effect has maximum magnitude and the other parameters such as annealing and coating have a significant influence on the GMI effect. It is believed that the domain structure and wall mechanism in the material are responsible for this behaviour. A 3-node input layer, 1-node output layer artificial neural network (ANN) model with three hidden layers including 30 neurons and full connectivity between the nodes was developed. A total of 1600 input vectors obtained from varied treated samples was available in the training data set. After the network was trained, better results were obtained from the network formed by the hyperbolic tangent transfer function in the hidden layers, there was a sigmoid transfer function in the output layer and we predicted the GMI. Comparing the predicted values obtained from the ANN model with the experimental data indicates that a well-trained neural network model provides very accurate results.     

Superconducting Single Photon Nanowire Detectors Development for IR and THz Applications

We present our progress in the development of superconducting single-photon detectors (SSPDs) based on meander-shaped nanowires made from few-nm-thick superconducting films. The SSPDs are operated at a temperature of 2–4.2 K (well below T _c ) being biased with a current very close to the nanowire critical current at the operation temperature. To date, the material of choice for SSPDs is niobium nitride (NbN). Developed NbN SSPDs are capable of single photon counting in the range from VIS to mid-IR (up to 6 μm) with a record low dark counts rate and record-high counting rate. The use of a material with a low transition temperature should shift the detectors sensitivity towards longer wavelengths. We present state-of-the art NbN SSPDs as well as the results of our recent approach to expand the developed SSPD technology by the use of superconducting materials with lower T _c , such as molybdenum rhenium (MoRe). MoRe SSPDs first were made and tested; a single photon response was obtained.      

电流退火对CoFeSiB非晶丝和薄带的巨磁阻抗效应比较

采用熔融抽拉法和单辊急冷法分别制备了Co68.25Fe4.5Si12.25B15非晶丝和薄带。测量了制备态下两者的巨磁阻抗(GMI)效应,发现非晶丝的GMI比率高于薄带。研究了不同电流密度退火后非晶丝和薄带的GMI效应,结果发现ΔΖ/Ζ=[Z(H)-Z(H=0)]/Z(H=0)都明显上升,且非晶薄带数值更大;当电流密度等于0.96×107A/m2时,薄带的这一比率最大达到410%,磁场灵敏度达到5.1%/(A/m)。分析了出现上述现象的原因。     

Possibility of Transport Through a Single Acceptor in a Gate-All-Around Silicon Nanowire PMOSFET

Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.      

Nanowire lithography on silicon

Nanowire lithography (NWL) uses nanowires (NWs), grown and assembled by chemical methods, as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that SiO2 NWs are a simple and compatible system to implement NWL on crystalline silicon and fabricate a wide range of architectures and devices. Planar field-effect transistors made of a single SOI-NW channel exhibit a contact resistance below 20 kOmega and scale with the channel width. Further, we assess the electrical response of NW networks obtained using a mask of SiO2 NWs ink-jetted from solution. The resulting conformal network etched into the underlying wafer is monolithic, with single-crystalline bulk junctions; thus no difference in conductivity is seen between a direct NW bridge and a percolating network. We also extend the potential of NWL into the third dimension, by using a periodic undercutting that produces an array of vertically stacked NWs from a single NW mask.     

Pt对In2O3纳米线场效应晶体管电学性能的影响

氧化铟纳米线(In2 O3 NWs)因具有合适的禁带宽度、较高的电子迁移率等优异的电学性能,可应用于晶体管、存储器、传感器等而备受关注,成为研究的热点.本实验通过简单易行的化学气相沉积法生长了In2 O3纳米线,结合电子束光刻(EBL)成功制备了In2 O3纳米线场效应晶体管器件(Field effect transistor,FET),利用溅射系统在In2 O3 FET上沉积不同厚度的Pt,研究了Pt纳米颗粒对In2 O3 FET电学性能的影响.利用扫描电子显微镜、X射线衍射及光致发光光谱研究了In2 O3纳米线的形貌、组成及光学性能;利用X射线光电子能谱分析纳米线的元素化学价态和组成.通过分析沉积Pt前后In2O3纳米线FET的电学性能发现,沉积Pt纳米颗粒后场效应晶体管阈值电压(Vth)有向右偏移的趋势,开关比(Ion/Ioff)有所下降,载流子浓度降低,载流子迁移率增大.晶体管阈值电压(Vth)向右偏移可归因于沉积Pt后金属/半导体接触形成电子转移,此外纳米线的表面缺陷可以充当吸附位点,表面缺陷吸附的氧和水分子将捕获来自纳米线的自由电子,导致表面电子消耗,从而使得载流子浓度降低.研究结果表明,Pt金属纳米颗粒对In2 O3纳米线FET的电学性能存在一定的影响.     

Role of Contact and Contact Modification on Photo-response in a Charge Transfer Complex Single Nanowire Device

Nano-Micro Letters - We investigated the feasibility of obtaining large photoresponse in metal-semiconductor-metal (MSM)type single nanowire device where one contact can be blocking type. We showed...     

添加剂对NiFe2O4尖晶石性能的影响

研究了3种添加剂对NiFe2O4尖晶石性能和微观结构的影响.对试样的体积密度、三点抗弯强度、抗热震性、导电率进行了测试,并结合SEM和EDX进行了微观结构分析.结果表明,添加剂M使试样的体积密度变化最快,含有3%M试样的抗弯强度较纯尖晶石提高了25MPa,添加T的试样热震性最好,添加剂M和T均能提高试样的导电能力.     

Cu层和Mo层对NiFe多层膜巨磁电阻（GMR）的影响

采用磁控溅射方法制备了ＮｉＦｅ／Ｃｕ和ＮｉＦｅ／Ｍｏ两个系列的多层膜，进行了结构，磁性和磁电阻测量，并对部分ＮｉＦｅ／Ｃｕ多层膜样品作了电镜分析，对于ＮｉＦｅ／Ｃｕ多层膜，在室温下的测量到巨磁电阻随Ｃｕ层厚度振荡的第一，二三峰。在ＮｉＦｅ／Ｍｏ多层膜样品中未发现巨磁电阻效应，讨论了非磁性 多层膜的磁性，界面结构和巨磁电阻效应。     

金属Ag对NiFe2O4尖晶石性能的影响

制备了不同金属Ag含量的Ag-NiFe2O4金属陶瓷,利用扫描电子显微镜观察显微组织,由X射线衍射分析化学成分,研究了Ag的添加量对其体积密度、气孔率、热震性、导电率以及腐蚀速率的影响,试验结果表明,抗热震性和导电能力随着Ag含量的增加而增强,导电率的提高和腐蚀率的增大仍是一对突出的矛盾.单一通过添加金属Ag不可能使导电率和腐蚀率都满足要求.