Synthesis and study of structural,dielectric, magnetic and magnetoelectric properties of K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>NbO<Subscript>3</Subscript>–CoMn<Subscript>0.2</Subscript>Fe<Subscript>1.8</Subscript>O<Subscript>4</Subscript> composites

Magnetoelectric (ME) composites consisting of K_0.5Na_0.5NbO₃ (KNN) as ferroelectric phase and CoMn_0.2Fe_1.8O₄ (CMFO) as ferrite phase with general formula (x) CoMn_0.2Fe_1.8O₄–(1???x) K_0.5Na_0.5NbO₃ (x?=?10, 20, 30, 40 and 50 wt%) were synthesized using solid state reaction method. X-ray diffraction analysis asserts the existence of component phases including spinel phase of CMFO and orthorhombic phase of KNN. Field emission scanning electron microscopy has been used for studying the morphology and calculation of average grain size. The temperature dependent dielectric properties including dielectric constant (\(\varepsilon ^{\prime}\)) and dielectric loss (tan δ) at different frequencies has been studied and both are found to increase with incorporation of CMFO. Magnetic hysteresis loops have been measured at temperatures of 300 and 5 K. Variation of magnetization versus temperature has been studied in field cooled and zero field cooled modes. Polarization versus electric field (P–E) hysteresis loops are obtained at room temperature indicating presence of ferroelectric ordering in the composites at room temperature. The remnant polarization (2P_r) and coercive field (2E_c) are found to decrease linearly with incorporation of CMFO. ME voltage coefficient (α_ME) has been measured. The maximum value of α_ME is found to be 5.941 mV/cm-Oe for 10% CMFO–90% KNN bulk composite.     

Chemical interaction of InAs,InSb, GaAs,and GaSb with (NH<Subscript>4</Subscript>)<Subscript>2</Subscript>Cr<Subscript>2</Subscript>O<Subscript>7</Subscript>–HBr–C<Subscript>4</Subscript>H<Subscript>6</Subscript>O<Subscript>6</Subscript> etching solutions

This paper presents results on the kinetics and mechanism of the physicochemical interaction of InAs, InSb, GaAs, and GaSb semiconductor surfaces with (NH₄)₂Cr₂O₇–HBr–C₄H₆O₆ etching solutions under reproducible hydrodynamic conditions in the case of laminar etchant flow over a substrate. We have identified regions of polishing and nonpolishing solutions and evaluated the apparent activation energy of the process. The surface morphology of the crystals has been examined by microstructural analysis after chemical etching. The results demonstrate that the presence of C₄H₆O₆ in etchants helps to reduce the overall reaction rate and extend the region of polishing solutions.     

Structure and properties of CaF<Subscript>2</Subscript>–B<Subscript>2</Subscript>O<Subscript>3</Subscript> glasses

FTIR spectroscopy has been employed to investigate the structure of CaF₂–B₂O₃ glasses. It is proposed that CaF₂ partially modifies the borate network forming \textCa _{1 / 2} ²⁺ [\textBO _{3 / 2} \textF] ^- {\text{Ca}}_{ 1 / 2}^{ 2+ } [{\text{BO}}_{ 3 / 2} {\text{F]}}^{ - } units. The rest of CaF₂ is assumed to build an amorphous network formed of CaF₄ tetrahedra. Analysis of density and molar volume revealed that the volume of CaF₄ tetrahedron in the studied glasses is slightly greater than that in the crystalline form. Data of density, molar volume, and electric conductivity have been correlated with the glass structure. As far as the authors know, CaF₂–B₂O₃ glasses are investigated for the first time.     

Investigation of solid solution of ZrP<Subscript>2</Subscript>O<Subscript>7</Subscript>–Sr<Subscript>2</Subscript>P<Subscript>2</Subscript>O<Subscript>7</Subscript>

In this study, ZrP₂O₇ was synthesized by the solid state reaction of ZrO₂ and NH₄H₂PO₄ at 900 °C. Then, in set 1; 10, 5, 1, 0.5, 0.1, 0.05, 0.03% previously prepared Sr₂P₂O₇ were doped into ZrP₂O₇, and Sr₂P₂O₇ slightly affect the unit cell parameter of cubic ZrP₂O₇ (a = 8.248(6)–8.233(8) Å). The reverse of this process was also applied to Sr₂P₂O₇ system (set 2). ZrP₂O₇ changes the unit cell parameters of orthorhombic Sr₂P₂O₇ in between a = 8.909(5)–8.877(5) Å, b = 13.163(3)–13.12(1) Å, and c = 5.403(2)–5.386(4) Å. Analysis of the vibrations of the P₂O ₇ ^4? ion and approximate band assignments for IR and Raman spectra are also reported in this work. Some coincidences in infrared and Raman spectra both sets were found and strong P–O–P bands were observed. Surface morphology, EDX analysis, and thermoluminescence properties of both sets were given the first time in this paper.     

Atomistic structure and energetics of interface between Mn-doped γ-Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> and MgAl<Subscript>2</Subscript>O<Subscript>4</Subscript>

The interface between an Mn-doped γ-gallium oxide (Ga₂O₃) thin film and an MgAl₂O₄ (001) substrate has been investigated using high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), and first-principles calculations. A high-quality Mn-doped γ-Ga₂O₃ film with a defective spinel structure has been epitaxially grown by pulsed laser deposition. The γ-Ga₂O₃ crystal shows an uniform tetragonal distortion with a tetragonality of 1.05 throughout the film thickness of 75 nm. HRTEM and HAADF-STEM observations reveal that the γ-Ga₂O₃ and MgAl₂O₄ crystals form a coherent interface without any interfacial layers or precipitates. The atomistic structure and energies are theoretically evaluated for the interfaces with two types of termination plane, i.e., Mg- and Al₂O₄-termination of MgAl₂O₄. The cation sublattice is found to be continuous for both interfaces despite the defective spinel structure of Mn-doped γ-Ga₂O₃ with some vacant cation sites. The Al₂O₄-termination shows a lower interfacial energy than the Mg-termination under most conditions of the chemical potentials. This behavior is attributed to the energetic preference of the Mn–Al₂O₄ local configuration at the interface.     

Growth and structure of Mg(Fe<Subscript>0.8</Subscript>Ga<Subscript>0.2</Subscript>)<Subscript>2</Subscript>O<Subscript>4 − δ</Subscript> films

Films 150–200 nm in thickness, with the nominal composition Mg(Fe_0.8Ga_0.2)₂O_{4 − δ} have been grown on (100) single-crystal silicon substrates by ion-beam sputtering in vacuum. The effect of growth and annealing conditions on the crystal structure and morphology of the films has been studied, and the thermal conditions for the growth of spinel-structure films have been optimized.     

Synthesis and characterization of TiO<Subscript>2</Subscript>–NiO and TiO<Subscript>2</Subscript>–WO<Subscript>3</Subscript> nanocomposites

TiO₂–NiO and TiO₂–WO₃ nanocomposites were prepared by hydrothermal and surface modification methods. The samples were analyzed using X-ray diffraction, Scanning Electron Microscope images, Transmission Electron Microscope, Energy dispersive analysis, Zeta potential, Electrophoretic mobility and Photocatalysis activity measurement. XRD data sets of TiO₂–NiO, TiO₂–WO₃ powder nanocomposite have been studied for the inclusion of NiO, WO₃ on the anatase-rutile mixture phase of TiO₂ by Rietveld refinement. The cell parameters, phase fraction, the average grain size, strain and bond lengths between atoms of individual phases have been reported in the present work. Shifted positional co-ordinates of individual atoms in each phase have also been observed.     

Kinetics of Thermal Transformation of Mg<Subscript>3</Subscript>(PO<Subscript>4</Subscript>)<Subscript>2</Subscript> · 8H<Subscript>2</Subscript>O to Mg<Subscript>3</Subscript>(PO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The kinetics of thermal dehydration of Mg₃(PO₄)₂ · 8H₂O was investigated using thermogravimetry at four different heating rates. The activation energies of the dehydration step of Mg₃(PO₄)₂ · 8H₂O were calculated through the isoconversional Ozawa and Kissinger-Akahira-Sunose (KAS) methods and iterative methods, which were found to be consistent and indicate a single mechanism. The possible conversion function of the dehydration reaction for Mg₃(PO₄)₂ · 8H₂O has been estimated through the Coats and Redfern integral equation, and a better kinetic model such as random nucleation of the “Avrami–Erofeev equation (A _3/2 model)” was found. The thermodynamic functions (ΔH*, ΔG*, and ΔS*) of the dehydration reaction are calculated by the activated complex theory and indicate that it is a non-spontaneous process when the introduction of heat is not connected.     

Microstructure,interfaces and creep behaviour of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–Sm<Subscript>2</Subscript>O<Subscript>3</Subscript> (ZrO<Subscript>2</Subscript>) eutectic ceramic composites

New compositions in the melt-grown eutectic ceramics field are investigated for thermomechanical applications. This paper is focused on the Al₂O₃–Sm₂O₃–(ZrO₂) system. The studied compositions give rise to interconnected microstructures without anisotropy along the growth direction. At variance with the binary eutectic Al₂O₃–SmAlO₃, the homogeneity of the microstructure of the Al₂O₃–SmAlO₃–ZrO₂ ternary eutectic is less sensitive to the growth rate. Interfaces between the alumina and perovskite phases are investigated by high-resolution transmission electron microscopy (TEM). They are semi-coherent. In stepped interfaces, the facets are parallel to dense planes of each phase. The steps have a dislocation character and may accommodate both misfits. The ternary eutectic displays a very good creep behaviour with strain rates very close to those obtained on other previously studied eutectics in the Al₂O₃–RE₂O₃(RE = Y, Gd, Er)–ZrO₂ systems. The deformation micromechanisms are analysed by TEM in the three eutectic phases. After creep, dislocations are present in every phase. The activation of unusual slip systems (pyramidal slip in the alumina phase) shows that high local stresses can be reached. The presence of dislocation networks with low energy configurations is consistent with predominance of dislocation climb processes controlled by bulk diffusion.     

High-damping and high-rigidity composites of Al<Subscript>2</Subscript>TiO<Subscript>5</Subscript>–MgTi<Subscript>2</Subscript>O<Subscript>5</Subscript> ceramics and acrylic resin

High-damping materials are widely used in engineering fields. In order to increase the precision of vibration control to different levels, high-damping materials with high-rigidity are required. This study attempts to develop a new high-damping high-rigidity material using ductile ceramics based on the Al₂TiO₅–MgTi₂O₅ system, which has many continuous microcracks along the grain boundaries. Ductile ceramics have high internal friction (Q ⁻¹ = 0.01–0.037), but very low rigidity (<10 GPa). The rigidity of Al₂TiO₅–MgTi₂O₅ ceramics was improved by combining them with a polymer such as acrylic resin. The Young’s modulus and internal friction of the composites of Al₂TiO₅–MgTi₂O₅ ceramics and acrylic resin are investigated. They show high-damping capacity (Q ⁻¹ = 0.03–0.04) with high rigidity (E = 50–60 GPa), and their properties depend on those of the polymer. Thus, the composites fabricated using the above method can serve as high-damping high-rigidity materials.     

Catalytic combustion of methane over Pt and PdO-supported CeO<Subscript>2</Subscript>–ZrO<Subscript>2</Subscript>–Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>/γ-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> catalysts

Catalytic combustion of methane was investigated on Pt and PdO-supported CeO₂–ZrO₂–Bi₂O₃/γ-Al₂O₃ catalysts prepared by a wet impregnation method in the presence of polyvinylpyrrolidone. The catalysts were characterized by X-ray fluorescence analysis, X-ray powder diffraction, X-ray photoelectron spectra, transmission electron microscopy, and BET specific surface area measurements. The Pt/CeO₂–ZrO₂–Bi₂O₃/γ-Al₂O₃ and PdO/CeO₂–ZrO₂–Bi₂O₃/γ-Al₂O₃ catalysts were selective for the total oxidation of methane into carbon dioxide and steam, and no by-products such as HCHO, CO, and H₂ were obtained. The catalytic activities of the PdO/CeO₂–ZrO₂–Bi₂O₃/γ-Al₂O₃ catalysts were relatively higher than those of the Pt-supported catalysts, due to the facile re-oxidation of metallic Pd into PdO based on lattice oxygen supplied from the CeO₂–ZrO₂–Bi₂O₃ bulk. A decrease in the calcination temperature during the preparation process was found to be effective in enhancing the specific surface area of the catalysts, whereby particle agglomeration was inhibited. Optimization of the PdO amount and calcination temperature enabled complete oxidation of methane at temperatures as low as 320 °C on the 11.6 wt% PdO/CeO₂–ZrO₂–Bi₂O₃/γ-Al₂O₃ catalyst prepared at 400 °C.     

Magnetic Anomalies and Electronic Structure of Ce<Subscript>2</Subscript>Cu<Subscript>2</Subscript>Mg and Ce<Subscript>2</Subscript>Pd<Subscript>2</Subscript>Mg

The intermetallic compounds RE ₂Cu₂Mg and RE ₂Pd₂Mg (RE=La, Ce) were prepared and characterized by magnetic susceptibility and heat-capacity measurements. They crystallize with an ordered U₃Si₂ type structure (space group P4/mbm) and the cerium compounds contain stable trivalent cerium ions, which undergo antiferromagnetic ordering at ∼7.5 and ∼4 K, respectively. In high magnetic fields Ce₂Cu₂Mg exhibits spin reorientation with critical field strength of 40 kOe at 5 K. The data are compared to the non-magnetic isotypic compounds La₂ T ₂Mg (T=Cu, Ni, Pd) and to the already reported intermediate valent Ce₂Ni₂Mg.     

Syntheses and proton conductivity of mesoporous Nd<Subscript>2</Subscript>O<Subscript>3</Subscript>–SiO<Subscript>2</Subscript> and NdOCl–SiO<Subscript>2</Subscript> composites

Two mesoporous oxide composites of Nd₂O₃–SiO₂ and NdOCl–SiO₂ were synthesized using SBA-15 as a template and neodymium nitrate or neodymium chloride as a precursor. The porous Nd₂O₃–SiO₂ with a SBA-15-like structure has amorphous walls and the porous NdOCl–SiO₂ with a replicated structure of SBA-15 has crystalline walls. These porous materials were characterized by X-ray diffraction, transmission electron microscopy and nitrogen adsorption/desorption. They exhibited significant proton conductivities in the presence of moisture at low temperatures and the highest conductivity observed was 4.55 × 10⁻⁴ S/cm at 47 °C in wet air (RH = 28.6%).     

Synthesis and study of sodium uranate Na<Subscript>2</Subscript>U<Subscript>2</Subscript>O<Subscript>7</Subscript>·6H<Subscript>2</Subscript>O and of products of its dehydration and thermal decomposition

Previously unknown sodium uranate of the composition Na₂U₂O₇·6H₂O was synthesized by precipitation from solution under hydrothermal conditions at 200°С. The composition and structure of this compound were determined by chemical analysis, X-ray diffraction, IR spectroscopy, and thermal analysis. The dehydration and thermal decomposition of the compound were studied.     

Chemical interaction of InAs,InSb, GaAs,and GaSb crystals with aqueous (NH<Subscript>4</Subscript>)<Subscript>2</Subscript>Cr<Subscript>2</Subscript>O<Subscript>7</Subscript>–HBr solutions

We have studied the nature and kinetics of the chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH₄)₂Cr₂O₇–HBr solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, solution stirring rate, and temperature. The results demonstrate that the dissolution rate of the semiconductors is diffusion-limited. We have determined the composition ranges of polishing solutions, optimized their compositions, and found conditions for the dynamic chemical polishing of the semiconductors. Ultrasmooth polished semiconductor surfaces have been obtained, with R _a ≈ 1 nm.     

Effect of gamma radiation on electrical and optical properties of (TeO<Subscript>2</Subscript>)<Subscript>0·9</Subscript> (In<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>0·1</Subscript> thin films

We have studied in detail the gamma radiation induced changes in the electrical properties of the (TeO₂)_0·9 (In₂O₃)_0·1 thin films of different thicknesses, prepared by thermal evaporation in vacuum. The current–voltage characteristics for the as-deposited and exposed thin films were analysed to obtain current versus dose plots at different applied voltages. These plots clearly show that the current increases quite linearly with the radiation dose over a wide range and that the range of doses is higher for the thicker films. Beyond certain dose (a quantity dependent on the film thickness), however, the current has been observed to decrease. In order to understand the dose dependence of the current, we analysed the optical absorption spectra for the as-deposited and exposed thin films to obtain the dose dependences of the optical bandgap and energy width of band tails of the localized states. The increase of the current with the gamma radiation dose may be attributed partly to the healing effect and partly to the lowering of the optical bandgap. Attempts are on to understand the decrease in the current at higher doses. Employing dose dependence of the current, some real-time gamma radiation dosimeters have been prepared, which have been found to possess sensitivity in the range 5–55 μGy/μA/cm². These values are far superior to any presently available real-time gamma radiation dosimeter.     

Microwave and photoluminesent characterizations of (Ca<Subscript>2</Subscript>Mg<Subscript>3</Subscript>)(X<Subscript>1.75</Subscript>Sb<Subscript>0.25</Subscript>)TiO<Subscript>12</Subscript> [X = Nb and Ta] ceramics

(Ca₂Mg₃)(X_1.75Sb_0.25)TiO₁₂ [X = Nb and Ta] ceramics are prepared through the conventional solid-state route. The samples are calcined at 1,100 and 1,180 °C, and are sintered at 1,250 and 1,375 °C. The substitution of Sb decreases the calcination and sintering temperatures of pure (Ca₂Mg₃)(Nb/Ta)₂TiO₁₂. The structure of the samples is analyzed using X-ray diffraction method. The microstructure of the sintered pellet is studied using scanning electron microscopy. The dielectric properties such as dielectric constant (ε_r), quality factor (Q_uxf) and temperature coefficient of resonant frequency (τ_f) are measured in the microwave frequency region. By Sb substitution, thermal stability is achieved, with the increase in dielectric constant, without much change in the quality factor. The materials have intense emission lines in the wavelength region 500–700 nm. The compositions have good microwave dielectric properties and photoluminescence and hence are suitable for dielectric resonator and ceramic laser applications.     

Crystal growth,X-ray diffraction characterization,and Mössbauer spectroscopy of FeIn<Subscript>2</Subscript>S<Subscript>4</Subscript>-In<Subscript>2</Subscript>S<Subscript>3</Subscript> solid solutions

Crystals of (FeIn₂S₄)_{1 ? x} (In₂S₃) _x solid solutions consisting of large blocks have been grown by directional solidification (horizontal Bridgman process). FeIn₂S₄, In₂S₃, and the solid solutions are shown to crystallize in the spinel structure. The composition dependence of their unit-cell parameter a follows Vegard's law. The local states of the Fe ions in the solid solutions have been studied by Mössbauer spectroscopy in a transmission geometry.     

Dielectric and piezoelectric properties of Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>–BaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics (1 − x)Bi_0.5Na_0.5TiO₃–xBaNb₂O₆ (BNT–BN100x), a new member of the BNT-based group, was prepared by conventional solid state reaction. X-ray diffraction showed that BaNb₂O₆ (BN) diffused into the lattice of Bi_0.5Na_0.5TiO₃ to form a solid solution with perovskite-type structure. The temperature dependence of dielectric constant ε_r revealed that the solid solution underwent two phase transitions from ferroelectric to anti-ferroelectric and anti-ferroelectric to paraelectric. Both the transition temperature T _d and T _m were shifted to lower with the increasing content of BaNb₂O₆. The temperature dependence of dielectric constant at different frequency revealed that the solid solution exhibited obviously dielectric relaxation characteristics. The sample with x = 0.6 mol% exhibited excellent electrical properties, piezoelectric constant d ₃₃ = 94 pC/N; electromechanical coupling factor k _p = 0.185. The results showed that BNT–BN100x ceramics were good candidates for use as lead-free piezoelectric ceramics.     

Dual relaxation behaviors and large electrostrictive properties of Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>–Sr<Subscript>0.85</Subscript>Bi<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> ceramics

Lead-free ceramics (1???x)Bi_0.5Na_0.5TiO₃–xSr_0.85Bi_0.1TiO₃ (BNT–xSBT, x?=?0.4, 0.5, 0.6 and 0.7) were prepared by a solid-state reaction process. Coexistence of ferroelectric relaxation at low temperature and Maxwell–Wagner dielectric relaxation at high temperature was revealed for the first time in this system. Meanwhile, hysteresis-free P–E loops combined with a very high piezoelectric strain coefficient (d₃₃) of 1658 pC/N concurrently with large electrostrictive coefficient Q?=?0.287 m⁴C^?2 were achieved. The ferroelectric relaxor behavior and large electrostrictive strain might be linked to easy reorientation and reversal of ergodic PNRs and the combined effect of Bi off-center position and lone pair electrons.