Mechanical and Transport Properties of Argon Annealed Y<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ca<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>:123 Superconductors

We report here the effects of argon heat treatment at 450 ^°C for 12 h on two similar sets of oxygenated Y_{1 ? x} Ca _x :123 superconducting samples prepared by two different heat treatments and oxygen purity as reported by Sedky and Abu-Ziad (Physica C 470, 659; 12). The oxygenated samples are called ssqHp, sssHp, ssqLp, and sssLp, and the Ar annealed samples are called ssqHpAr, sssHpAr, ssqLpAr, and sssLpAr. It is found that the c parameter of annealed samples is gradually increased with Ca addition for all samples, while orthorhombic distortion (OD) is decreased. It is also noted that Ar heat treatment decreased the link between superconducting grains for all samples, and a linear decrease in microhardness (Vickers hardness number (VHN)) with Ca addition is obtained. But the rate of increase/decrease of the c parameter, OD, and VHN against Ca content is different in ssqHpAr and sssLpAr samples as compared to sssHpAr and ssqLpAr samples. Interestingly, the sssHpAr and ssqLpAr samples show a considerable loss of oxygen and small decrease in T _c. While the ssqHpAr and sssLpAr samples show much smaller loss of oxygen and a gradual increase in T _c up to 16 and 17 K, respectively. These results are discussed in terms of the mechanism of oxygen loss by Ca in addition to ssqHpAr and sssLpAr samples as compared to sssHpAr and ssqLpAr samples.     

Structural Parameters and Spin Filtering Properties of Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(<Emphasis Type="Bold">M</Emphasis>)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>P compound

In this work, we have explored the structural and magnetic properties of GaP-based diluted magnetic semiconductors (DMSs). Based on first-principle density functional theory (DFT) calculations and using a full potential linearized augmented plane wave (FP-LAPW) method in generalized gradient approximation (GGA), some significant structural and magnetic properties of Ga _1?x (M) _x P compound as DMS are investigated. In this compound, M is a transition element such as vanadium (V), manganese (Mn), cobalt (Co), and copper (Cu) with a concentration of X. We have calculated the structural parameters such as the equilibrium lattice constant and bulk modulus of the compound. Furthermore, the spin polarization and magnetic moments are studied. We have found that by increasing the atomic number of the transition element, the lattice constant reduces, except for that of Cu, and compressibility improved in comparison with GaP. Moreover, with X=25 %, the Ga_0.75(M)_0.25P compound becomes more stable by increasing the atomic number of the transition element M. The study of the electronic properties of the compound indicates that the main contribution in total density of states near Fermi level is related to the 3d orbitals of the transition elements and the highest magnetic moment is for Mn-doped GaP.     

Structural and Superconductivity Properties of BaFe<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Pt<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As<Subscript>2</Subscript>

Extraordinary magnetic behaviors, resistivity properties, and lattice parameters of the main sample BaFe₂As₂ and BaFe_2?x Pt _x As₂ in the variation of x from 0 to 0.4 with the step of 0.1 were investigated. The bulk materials have been prepared by the solid-state reaction method and sealed into a quartz tube. The crystal structure of all samples exhibited the ThCr₂Si₂-type crystal structure which is in harmony with earlier studies in the literature. The superconducting states with magnetization measurements have been detailed in the wide temperature range 5–170 K, up to a field of 20 Oe. Increasing Pt and decreasing Fe elements in the BaFe_2?x Pt _x As₂ compound deteriorated superconductivity. Using magnetization measurement data, we present the variation of superconducting critical temperature (T _c) correlating with a Pt dopant rate from x = 0 to x = 0.4. The dopant rate of x = 0.3 exhibited the limit rate for maximum T _c; deterioration of superconductivity was revealed with a dopant rate of more than x = 0.3. This should be explained by varying T _c related to a lattice shrinking and pressure effect (geometric factor).     

Lanthanum Concentration Effect of Magnetocaloric Properties in La<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3−<Emphasis Type="Italic">δ</Emphasis></Subscript>

Magnetocaloric properties of La _x MnO _3?δ films in the composition range 0.75 ≤ x ≤ 1 near phase transition from a ferromagnetic to a paramagnetic state were investigated. For x > 0.75 composition, it is showed that the increasing of La concentration improves magnetocaloric properties. It is also showed that post-annealing films in O ₂ improves magnetocaloric effect. The magnetocaloric properties are affected by Mn ⁺³/Mn ⁺⁴ ratios, which can be varied either by changing La concentration or varying the oxygen content in the La _x MnO _3?δ system. Moreover, La _x MnO _3?δ films can be used as a working material of an apparatus based on the active magnetic regenerator cycle that cools hydrogen gas.     

Preparation and Properties of Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Te

Mn _x Hg_{1 ? x}Te (x = 0.05, 0.12) single crystals were grown by solid-state recrystallization, and their axial and radial homogeneity was assessed by optical, electrical, and electron-microscopic measurements. The crystals are p-type, with a hole concentration of (4.3–5.3) × 10²² m^?3 and Hall mobility in the range (410–570) × 10^?4 m²/(V s).     

Synthesis and Characterization of Ni<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Bi<Subscript>3</Subscript> Superconductor

In this paper, we characterized the microstructure and superconducting properties of Cu-doped NiBi₃ samples. The polycrystalline Ni_1?x Cu _x Bi₃ (0 ≤ x ≤ 0.10) samples were prepared using a solid-state reaction method. The crystal structure and unit cell parameters were determined by Rietveld refinement of powder X-ray diffraction. The data showed that the main phase present corresponded to NiBi₃ without dependence on the Cu concentration, but with small quantities of Ni and Bi. The SEM and AFM measurements revealed that the main phase was inhomogeneous at microscopic level, with Bi richer regions in comparison to other regions. However, Raman spectroscopy results did not show significant changes in the spectra with Cu doping and in different regions of the samples. Another finding was that regardless of Cu doping, the superconducting transition temperature was 4.05–4.06 K.     

Properties of amorphous Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>:H (<Emphasis Type="Italic">x</Emphasis> = 0−1) films

Plasma deposition has been used to grow Si_1?x Ge _x :H(x= 0 ? 1) films, undoped and doped with PH₃ or B₂H₆, for p-i-n solar cells and other optoelectronic applications. The optical, electrical, and photoelectric properties of the films have been studied at constant hydrogenation and doping levels. The films deposited under appropriate conditions are amorphous, and three-layer solar cells fabricated from such films offer an efficiency of 9.5% at an illumination of 100 mW/cm². The photoresponse of the a-Si_{1 ? x} Ge _x :H films strongly depends on Ge content. The hydrogen concentration in the films was controlled by varying the gas phase composition and was determined from the IR absorption in the films.     

Synthesis of ultrafine fluorite Sr<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Nd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript> powders

We have identified conditions that ensure the preparation of ultrafine Sr_{1 − x} Nd _x F_{2 + x} powders uniform in phase composition. The powders were characterized by X-ray diffraction and scanning electron microscopy. The powder particles have the form of faceted nano- and microcubes and range in size from 30–100 nm to 0.3–2.5 μm, depending on precipitation conditions.     

Photoluminescence Properties of the Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Y<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O Tubes Prepared by Polycarbonate Templates

We have prepared Zn_1−x Y _x O (x=0 and 0.01) tubes to study its structural and photoluminescent properties. A pore wetting process of porous polycarbonate templates with the liquid precursor and following thermal treatment were utilized for preparing the Zn_1−x Y _x O tube structure. Using the polycarbonate template with pore size of about 2 μm diameter, the Zn_1−x Y _x O tubes were obtained. Photoluminescence (PL) spectroscopy was used to measure optical emissions from 350 to 650 nm with a He-Cd laser. The results of the PL spectra show that the Zn_1−x Y _x O tubes have evident emission peaks at the UV (about 380 nm) and visible (around 500 to 650 nm) region. The emission peak at the UV region was slightly shifted to higher wavelengths with increasing Y content. Meanwhile, the green and yellow emission peaks intensity increases as Y content increases. These results are explained by the structure tuning and oxygen deficiency with the introduction of Y.     

Theory of Pseudogap in La<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>CuO<Subscript>4</Subscript>

This paper proposes a mechanism for both the pseudogap and the superconducting gap in La_2−x Sr _x CuO₄ (LSCO), and gives theoretical temperature evolutions of the pseudogap and the superconducting gap for experimental verification.     

Structural Properties of Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Te Solid-Solution Nanoparticles

It is shown that Cd _x Hg_1–xTe solid-solution nanoparticles can be produced by ball milling, but their presence is masked by larger particles. The methods of laser-correlation spectroscopy and X-ray-diffraction analysis have been used to study the structure of the nanoparticles and their size distribution. The presence of a compositional disordering of the solid solution structure was experimentally confirmed.     

Magnetic Properties and Superconductivity in GdFeAsO<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Abstract A series of GdFeAsO_1−x F _x (x=0,0.1, 0.2, and 0.25) samples have been synthesized with conventional solid-state method. The phase purity is significantly improved by using Fe₂O₃ as the source of oxygen, compared to those prepared using Gd₂O₃ as the precursor. The lattice parameters are found to shrink with increasing fluorine doping level. The F-doped samples show a superconducting transition with T _c increasing with doping level, reaching T _c=40.1 K at x=0.25. A pronounced Curie–Weiss-like paramagnetic background, which is usually attributed to the impurity phases, is found to be independent of the fluorine doping level and proven to come from the Gd³⁺ in the GdFeAsO_1−x F _x compound with the effective magnetic moment of Gd³⁺ being μ _eff=7.83±0.05 μ_B. The extrapolated slope of dH_c2/dT|_T=Tc{dH}_{\mathrm{c2}}/dT|_{T=T_{\mathrm{c}}} in this system is about −4.5 T/K.     

Structural and magnetic properties of Cr<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>V<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te (<Emphasis Type="Italic">x</Emphasis> = 0−0.4) solid solutions

Cr_1?x V _x Te solid solutions with a hexagonal structure (NiAs type) have been obtained in the composition range x = 0?0.4 by direct melting of elemental mixtures, followed by annealing and quenching. The 80-K magnetic moment is found to decrease from 2.4μ_B in CrTe to 1.52μ_B in Cr_0.6V_0.4Te. The Curie temperature varies from 342 K to 321 K, respectively.     

The Effect of Charge Transport Mechanisms on the Efficiency of Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1 – <Emphasis Type="Italic">x</Emphasis></Subscript>As/GaAs Photodiodes

Photovoltaic characteristics of heterostructure Al_xGa_{1 – x}As/GaAs p–i–n photodiodes fabricated by molecular-beam epitaxy have been studied. Efficiencies of 50% were reached in conversion of monochromatic light in the photovoltaic mode at power density of up to 200 W/cm² at a wavelength λ = 830 nm. A relationship was demonstrated between the “saturation currents” for the diffusion-related charge-transport mechanism (Shockley) in p–i–n photodiodes, calculated from dark current–voltage characteristics, and the experimental values of efficiency. As the “saturation current” of the diffusion-related charge-transport mechanism increases by an order of magnitude, a relative decrease in the efficiency from the maximum value by more than 10% is observed under excitation by constant or pulsed monochromatic light.     

Magnetic Properties of CuTi<Subscript>2−2<Emphasis Type="Italic">x</Emphasis></Subscript>Cr<Subscript>2<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>4</Subscript> Materials

The magnetic properties of semi-conductor CuTi_2−2x Cr_2x S₄ systems have been studied. The nearest neighbour J ₁(x) and the next-neighbour super-exchange J ₂(x) interactions are evaluated by using the mean field theory for this spinel CuTi_2−2x Cr_2x S₄ system. The magnetic energy, the intraplanar and the interplanar interactions are deduced. The high-temperature series expansion (HTSE) combined with the Padé approximants method (PA) is applied to this spinel system to determinate the magnetic phase diagrams, i.e. T _C versus dilution x. The critical exponents associated with the magnetic susceptibility (γ) and with the correlation length (ν) are deduced in order phase.     

Enhanced Superconductivity in Double-Doping Cu<Subscript>0.15</Subscript>TaSe<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript><Emphasis Type="Italic">S</Emphasis><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Superconducting Cu _x TaSe₂(x=0.05, 0.15) and Cu_0.15TaSe_2?x S _x (x=0, 0.5, 1, 1.5) single crystals have been systematically fabricated by a chemical vapor transport method. It is found that the double doping in TaSe₂, i.e., the simultaneous intercalation of Cu and substitution of Se by S, can substantially enhance the superconducting transition temperature. Transport property measurements give evidence of the coexistence and competition of charge density wave state and superconductivity in Cu _x TaSe₂ which provide meaningful information to understand the complex electronic states in this system. The parallel shift and the fan-shape broadening behaviors are observed in the superconducting transition curves under magnetic fields of Cu_0.15TaSeS and TaSeS, respectively, indicating an increase of coherence length and suppression of superconducting fluctuation induced by copper intercalation.     

Investigation on the Electronic Structure of Fe-Based Superconductor SmFe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ir<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>AsO

Electronic structure of Fe-based superconductor SmFe_1−x Ir _x AsO is investigated through X-ray photoemission spectroscopy (XPS) in this study. It is found that iridium element was doped at the Fe site, which introduces electrons to the conduction Fe–As layer directly. As a result, the magnetic ordering corresponding to the Fe3d is suppressed by iridium doping through suppressing magnetism of the 3d itinerant electrons. Compared to fluorine doping, iridium doping affects the superconductivity more significantly due to Ir-induced disorder in FeAs layers.     

Raman spectroscopy determination of carrier concentration in <Emphasis Type="Italic">n</Emphasis>-In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>As epitaxial films

We have studied in detail the coupled phonon-plasmon mode Raman spectra of n-In _x Ga_{1 − x} As with n in the range 10¹⁷ to 10¹⁹ cm⁻³. The results indicate that the behavior of the high-frequency mode L ₊ can be described in terms of coupled modes in the Drude approximation. The proposed theory and experimental data are used to estimate the carrier concentration in the solid solution and its composition.     

Effect of Low Temperature Annealing on the Magnetic Properties of Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As/GaAs Superlattices

We have studied the effect of low-temperature (LT) annealing on the properties of Ga_1?xMn _x As/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (H_C) three times larger than the undoped SL, and showed a much more robust remanent magnetization (M_r). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of M_r in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.