应用于FPGA的边界扫描设计

针对在FPGA芯片中的应用特点,设计了一种边界扫描电路,应用于自行设计的FPGA新结构之中。该电路侧重于电路板级测试功能的实现,兼顾芯片功能的测试;同时,加入了器件编程功能。     

用FPGA实现16位格雷码译码和工程量显示

采用FPGA实现绝对式光电编码器格雷码输出的译码和工程量显示电路。设计包括FPGA的硬件电路设计,电路功能的VHDL语言设计和实现,以及采用JTAG边界扫描测试标准实现电路的在系统编程(ISP)等。     

板载FPGA芯片的边界扫描测试设计

边界扫描技术是标准化的可测试性设计技术，它提供了埘电路板上器件的功能、互连及相互问影响进行测试的一类方法，极大地方便了对于复杂电路的测试。文中针对某设备分机具体的待测电路，遵循IEEE1149.1标准，结合FPGA芯片的BSDL文件进行边界扫描测试设计，理解和掌握其设计原理、数据结构，并实现板级测试与ATE的接口。     

基于JTAG的计算机硬件实验系统的设计与实现

介绍了一种利用自建JTAG边界扫描结构、基于FPGA实现的计算机硬件实验教学系统。针对系统中计算机与FPGA内实验电路的信息交换以及对实验电路的运行控制两个关键点进行了研究,将边界扫描测试协议作为信息传递手段实现了计算机与FPGA内部实验电路以及运行控制器之间的数据通信。设计了自建JTAG边界扫描结构,并设计了相对通用的运行控制器以实现对不同计算机硬件课程不同实验电路的运行控制。设计以STM32作为主控芯片的USB和JTAG协议之间的协议转换器,用以连接计算机和FPGA中的自建JTAG边界扫描结构。以16位微程序控制的微处理器作为目标实验电路,在AlteraDE2-115教育开发板上对该系统进行了实现和验证。试验表明,该系统在可靠性、稳定性等方面均能满足高校计算机硬件实验的需求。     

基于边界扫描的板级动态扫描链路设计策略

边界扫描技术是一种新型的VLSI电路测试及可测性设计方法。但是在扫描链路的设计中如何将不同厂家、不同型号、不同工作电压的Bs器件实现JTAG互连，如何将边界扫描测试、在线编程和在线仿真结合起来一直是一个亟待解决的问题。为了解决上述问题，文中提出了两种基于边界扫描技术的板级动态链路设计方法。该方法不仅能完成边界扫描测试，还能完成在线编程或在线仿真等功能，具有很好的测试设计灵活性。     

基于边界扫描技术的Flash测试技术研究

提出了一种片内存储器的可测性设计方法.在详细分析了边界扫描技术的结构,功能与控制原理的基础上:设计了一种存储器测试接口.该接口符合JTAG标准(IEEE 1149.1标准),其中包含了标准的指令寄存器设计,用来控制访问不同的扫描链.在权衡了测试效率和芯片面积的基础上,提出了一种在线测试器电路的设计方法.实验表明,该测试电路可以以小的面积开销而节省大量测试时间.     

手机用TFT-LCD驱动控制芯片的测试电路结构设计

文章从分析手机用TFT-LCD驱动控制芯片的测试需求和芯片结构出发，提出了一种针对该芯片的测试电路结构设计方案。该方案采用多条扫描链对芯片内的多个异构的模块进行隔离，保证了各个模块有较高的测试独立性。考虑到内置SRAM的特殊性，采用边界扫描方式进行测试，提高了测试的灵活性，减少了测试电路的面积。电平敏化扫描链的引入．大大提高了Source Driver测试的可控制性。该方案支持手机用TFT-LCD驱动控制芯片的常规以及特殊项目的测试。     

边界扫描测试电路的设计

讨论了边界扫描测试电路的设计方法和电路的基本结构，并针对光纤通信系统中的32：1时分复用芯片设计了边界扫描电路，给出了模拟结果。     

边界扫描测试技术的原理及其应用

边界扫描技术是一种应用于数字集成电路器件的标准化可测试性设计方法，他提供了对电路板上元件的功能、互连及相互间影响进行测试的一种新方案，极大地方便了系统电路的测试。自从1990年2月JTAG与TEEE标准化委员会合作提出了“标准测试访问通道与边界扫描结构”的IEEE1149．1—1990标准以后，边界扫描技术得到了迅速发展和应用。利用这种技术，不仅能测试集成电路芯片输入／输出管脚的状态，而且能够测试芯片内部工作情况以及直至引线级的断路和短路故障。对芯片管脚的测试可以提供100％的故障覆盖率，且能实现高精度的故障定位。同时，大大减少了产品的测试时间，缩短了产品的设计和开发周期。边界扫描技术克服了传统针床测试技术的缺点，而且测试费用也相对较低。这在可靠性要求高、排除故障要求时间短的场合非常适用。特别是在武器装备的系统内置测试和维护测试中具有很好的应用前景。本文介绍了边界扫描技术的含义、原理、结构，讨论了边界扫描技术的具体应用。     

模拟集成电路的边界扫描可测性设计方案

提出了一种基于边界扫描技术的模拟集成电路内建自测试方案。该方案依照IEEE 1149.4边界扫描测试标准, 在添加极少电路元件的基础上, 增加了电路性能测试单元(FTM), 能够充分利用电路系统中已有数模混合资源, 通过控制器内部向被测电路施加激励, 完成模拟集成电路的功能性测试。采用Cyclone II系列芯片EP2C35F672C8实现测试系统设计, 并以模拟集成滤波芯片MAX292为被测核心电路展开实验, 其频率特性的测试结果表明了该测试方案的正确性和系统测试的有效性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.