一种新型半绝缘键合SOI结构

报道了一种新型半绝缘键合SOI结构,采用化学气相淀积加外延生长键合过渡多晶硅层的方法实现了该结构.研制出的这种新结构,完整率大于85%,Si-Si键合界面接触比电阻小于5×10-4Ω·cm2.这种新结构可以广泛用于高低压功率集成电路、高可靠集成电路、MEMS、硅基光电集成等新器件和电路中.     

引线带键合技术在混合集成电路中的应用

在混合集成电路的引线带键合中,由于与圆形键合丝在键合引线形状上的不同,导致其键合方式和键合参数有所不同。本文以金带键合为例,就混合集成电路中金带键合点的失效模式、键合引线的评价等问题进行了讨论,通过采用正交试验法对键合参数进行优化试验,提高键合的可靠性,达到引线带在混合集成电路中实际应用的要求。     

基于薄膜HIC金铝键合失效的工艺研究

介绍了薄膜混合集成电路(HIC)中金铝键合失效机理,提出了一种解决金铝键合失效的新工艺.分析失效机理发现,铝丝和薄膜金导带形成的金铝界面因原子扩散而形成内部空洞,出现键合根部的键合丝断裂的现象.通过改变键合区金属层结构,实现了单一金属化系统,有效避免了金属间化合物的形成.该项研究结果对陶瓷基薄膜HIC的工艺应用范围的拓...     

三维CMOS集成电路技术研究

论述了三维集成电路(3DIC)的发展概况,介绍了近几年国外发展的各种三维集成电路技术,主要包括再结晶技术、埋层结构技术、选择性外延过生长技术和键合技术.并基于SiGe材料特性,提出了一种新型的Si-SiGe三维CMOS结构,即将第一层器件(Si nMOS)做在SOI(Si on insulator)材料上,接着利用SiO2/SiO2低温直接键合的方法形成第二层器件的有源层,然后做第二层器件(SiGe pMOS),最终形成完整的三维CMOS结构.与目前所报道的Si基三维集成电路相比,该电路特性明显提高.     

用于MEMS器件的单面溅金硅共晶键合技术

分析了金硅共晶键合的基本原理,讨论了键合实验的基本工艺,给出了键合的测试结果.这种键合方法键合温度低,键合工艺简单,与器件制造工艺兼容,对工艺环境要求不高,可以得到满意的键合强度,而且成本低,特别适合于已经做过结构的器件键合封接工艺.     

铜丝球键合工艺及可靠性机理

文章针对铜丝键合工艺在高密度及大电流集成电路封装应用中出现的一系列可靠性问题,对该领域目前相关的理论和研究成果进行了综述,介绍了铜丝球键合工艺、键合点组织结构及力学性能、IMC生长情况、可靠性机理及失效模式。针对铜丝球键合工艺中易氧化、硬度高等难点,对特定工艺进行了阐述,同时也从金属间化合物形成机理的角度重点阐述了铜丝球键合点可靠性优于金丝球键合点的原因。并对铜丝球键合及铜丝楔键合工艺前景进行了展望。     

晶圆混合键合工艺优化研究

随着集成电路制造工艺技术的发展和不断进步,一种永久性晶圆键合技术可以在不需要光刻尺寸的进一步缩小而增加IC制造的复杂性的情况下使芯片平面尺寸大幅减小,今天已成为热门的研究方向.而且该晶圆键合工艺可以将图像传感器感光芯片与专用集成电路芯片连接起来,大幅降低信号衰减,从而提升产品性能.但是,在晶圆键合过程中,通常会发生键合...     

混合集成电路的外引线键合技术

混合集成电路外引线键合的方式很多。与混合集成电路的内引线键合不同，外引线键合时，键合丝的1端在管壳的引线柱上。因此，管壳外引线金属镀层的结构、镀层材料、键合丝的性能和键合工艺因素都将影响混合电路外引线键合的质量。本文主要对Au丝球焊、Au丝点焊、SiAl丝超声焊等不同的键合工艺及其对应的金属学系统进行研究，并对其结果进行比较。采用Au丝点焊工艺键合混合电路外引线的效果最佳。     

IC封装中键合线传输结构的仿真分析

随着高频高速集成电路制造工艺的不断进步,电子封装技术的发展也登上了一个新高度。作为微电子器件制造过程中的重要步骤之一,封装中的传输线、过孔、键合线等互连结构都可能对电路的性能产生影响,因此先进的集成电路封装设计必须要进行信号完整性分析。介绍了一种键合线互连传输结构,采用全波分析软件对模型进行仿真,着重分析与总结了键合线材料、跨距、拱高以及微带线长度、宽度五种关键设计参数对封装系统中信号完整性的影响,仿真结果对封装设计具有实际的指导作用。     

功率混合集成电路键合强度控制研究

通过引入铜过渡键合垫片，取消了金-铝键合系统，改用铝-铝键合，以提高功率混合集成电路内引线键合强度的可靠性等级，满足某些特殊领域的要求。运用SPC控制，对键合工艺进行了有效控制，使功率混合集成电路内引线键合强度和键合工序能力得到了较大的提高。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.