A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process

A 30 dBm ultra-low insertion loss CMOS transmit-receive switch fully integrated with an 802.11b/g/n transceiver front-end is demonstrated. The switch achieves an insertion loss of 0.4 dB in transmit mode and 0.1 dB in receive mode. The entire receiver chain from antenna to baseband output achieves a measured noise figure of 3.6 dB at 2.4 GHz. The switch has a P_1dB greater than 30 dBm by employing a substrate isolation technique without using deep n-well technology. The switch employs a 1.2 V supply and occupies 0.02 mm² of die area.     

High-performance GaAs switch IC's fabricated using MESFET's withtwo kinds of pinch-off voltages and a symmetrical pattern configuration

GaAs MESFET switch IC's operating at low control voltages of 0/-3 V and +3/0 V have been developed for use in Personal Handy Phones using the 1.9 GHz band. The switch IC's have excellent RF characteristics, and have no need for external circuit installation. The unique points of these IC's are the use of GaAs MESFET's with two kinds of pinch-off voltages and a symmetrical source and drain pattern configuration with respect to the gate. The 0/-3 V IC had low insertion loss of 0.55 dB and 0.65 dB, and high isolation of 31 dB and 24 dB at receiving and transmitting operations, respectively. The +3/0 V IC also had excellent characteristics such as insertion loss of 0.73 dB and 0.95 dB, and isolation of 27 dB and 23 dB, respectively. Both IC's had an output power at 1 dB gain compression point of 25.4 dBm and 3rd order intercept point of more than 46 dBm     

A GaAs high power RF single-pole dual throw switch IC fordigital-mobile communication system

A high power GaAs monolithic RF switch IC that can handle powers over 5 W (P1 dB: 37 dBm) with a positive 5-V control voltage was developed. This high power handling capability was achieved by using a novel circuit configuration that makes possible the feeding forward of the input-signal to the control gates. The implemented Single Pole Dual Throw switch IC integrated with the coupling capacitors using a high dielectric material, Barium Strontium Titanate, shows an insertion loss less than 0.8 dB at 1 GHz and an isolation over 25 dB in a frequency range of 0.5-1.5 GHz     

一种超低插损砷化镓射频开关

报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。该产品在82 0～ 95 0 MHz下 ,插入损耗≤ 0 .4 d B,回波损耗≥ 1 9.5 d B,反向三阶交调截距点≥ 67d Bm,隔离度≥ 1 5 .5 d B,控制电压为 (0 ,+4 .75 V)     

A 0.5-μm CMOS T/R switch for 900-MHz wireless applications

A single-pole double-throw transmit/receive switch for 3.0-V applications has been fabricated in a 0.5-μm CMOS process. An analysis shows that substrate resistances and source/drain-to-body capacitances must be lowered to decrease insertion loss. The switch exhibits a 0.7-dB insertion loss, a 17-dBm power 1-dB compression point (P_{1 dB}), and a 42-dB isolation at 928 MHz. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, by minimizing the substrate resistances, and by dc biasing the transmit and receive nodes, which decreases the capacitances while increasing the power 1-dB compression point. The switch has adequate insertion loss, isolation, P_{1 dB}, and IP₃ for a number of 900-MHz ISM band applications requiring a moderate peak transmitter power level (~15 dBm)     

Low-insertion-loss DP3T MMIC switch for dual-band cellular phones

We propose a new type of dual-pole triple-throw double heterojunction monolithic microwave integrated circuit (IC) switch for use in digital cellular phones. The IC we developed exhibits a low gate leakage current of 400 nA and an insertion loss as low as 0.4 dB, even at added power of 34 dBm at a frequency of 950 MHz. Measured P_{1 dB} was about 36 dBm, and a low distortion of 65 dBc was also obtained     

A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

A fully integrated single-pole-double-throw transmit/receive switch has been designed and fabricated in standard bulk 90-nm complementary metal-oxide semiconductor (CMOS) technology. Traveling wave concept was used to minimize the insertion loss at higher frequency and widen the operating bandwidth. The switch exhibits a measured insertion loss of 2.7 -dB, an input 1-dB compression point (input P_{1 dB}) of 15 dBm, and a 29-dB isolation at the center frequency of 77 GHz. The total chip size is only 0.57 times 0.42 mm ² including all testing pads. To our knowledge, this is the first CMOS switch demonstrated beyond 50 GHz, and the performances rival those monolithic microwave integrated circuit switches using standard GaAs PHEMTs     

X波段单片集成低噪声接收子系统

报道一种新型 X波段 0 .2 5 μm PHEMT全单片集成低噪声子系统。该子系统由开关衰减电路、采样检波电路和低噪声放大器三部分组成。开关插入损耗仅 0 .5 d B,放大器噪声系数小于 1 .5 d B。当开关控制电压为-2 V,输入电平 <-7d Bm时 ,此系统相当于一个低噪声放大器。在 8.5～ 1 0 .5 GHz频率内 ,整个系统增益大于2 4d B,噪声系数小于 2 .0 d B,输入输出 VSWR<1 .5 ;但当输入电平 >-7d Bm时 ,采样检波电路开始工作 ,打开主放大器前的开关衰减器 ,限制输入功率进入 LNA。输入功率越大 ,反射越大。在开关控制电压为 +2 V时 ,无论输入功率多大 ,开关关闭通道     

A CMOS Active Balun Using Bond Wire Inductors and a Gain Boosting Technique

An active balun with a single-ended input and a pair of differential outputs is presented for the input stages of differential circuits. The active balun, which is composed of an input resonator and cascaded common-gate amplifiers, was implemented using 0.18-mum CMOS technology and bond wire inductors. A body-source cross-coupled configuration was used to enhance the gain of the active balun. The gain is 9.3 dB at 1.8 GHz, and the phase and the amplitude error are less than 2deg and 1 dB, respectively, in the frequency range of 1 to 2 GHz, even for a P_1dB of -2.7 dBm. The balun consumes 9 mA for 3-V supply voltage.     

多晶硅衬底上的RF MEMS开关

在微机械开关与硅IC工艺设计和兼容方面进行了改进,获得了一种可与IC工艺兼容的RF MEMS微机械开关.采用介质隔离工艺技术把这种RF MEMS微机械开关制作在绝缘的多晶硅衬底上,实现了与IC工艺兼容;采用在金属膜桥的端点附近刻蚀一些孔的优化方法,降低了RF MEMS微机械开关的下拉电压.用TE2819电容测试设备测试开关的电容,测得开关的开态电容、关态电容和致动电压分别为0.32pF、6pF和25V.用HP8753C网络分析仪对RF MEMS微机械开关进行了RF特性测试,得出RF MEMS微机械开关在频率1.5GHz下关态的隔离度为35dB,开态的插入损耗为2dB,用示波器测得该开关的开关速度为3μs.     

CMOS T/R Switch Design: Towards Ultra-Wideband and Higher Frequency

This paper presents the comprehensive considerations of CMOS transmit/receive (T/R) switch design towards ultra-wideband and over 15-GHz frequencies. Techniques for minimizing parasitics and increasing linearity are discussed. A customized transistor layout is proposed for T/R switch design and its effects on insertion loss and isolation are studied. The analysis shows that a series-only architecture using the customized transistor layout achieves better insertion loss and reasonable isolation. A double-well body-floating technique is proposed and its effects are discussed. A differential switch architecture without shunt arms is designed and verified by experimental results. Fabricated in 0.13-mum triple-well CMOS, the T/R switch exhibits less than 2 dB insertion loss and higher than 21 dB isolation up to 20 GHz. With resistive body floating and differential architecture, the high linearity is of ultra-wideband characteristic, more than 30-dBm power 1-dB compression point (P_1dB) is obtained up to 20 GHz in only 0.03 mm² active die area     

用于手机砷化镓MMIC射频开关的研制

报道一种用于手机的高功率、低插损砷化镓 MMIC射频开关。该产品在 870～ 970 MHz下 ,线性功率容量 >3 3 d Bm,插入损耗 (IL) <0 .6d B,隔离度 (Iso)≥ 1 7d B,反向三阶交调 (PT0 1 )≥ 70 d Bm,控制电压 :(0 ,-4) V。     

Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance

A low insertion-loss single-pole double-throw switch in a standard 0.18-/spl mu/m complementary metal-oxide semiconductor (CMOS) process was developed for 2.4- and 5.8-GHz wireless local area network applications. In order to increase the P/sub 1dB/, the body-floating circuit topology is implemented. A nonlinear CMOS model to predict the switch power performance is also developed. The series-shunt switch achieves a measured P/sub 1dB/ of 21.3 dBm, an insertion loss of 0.7 dB, and an isolation of 35 dB at 2.4 GHz, while at 5.8 GHz, the switch attains a measured P/sub 1dB/ of 20 dBm, an insertion loss of 1.1 dB, and an isolation of 27 dB. The effective chip size is only 0.03 mm/sup 2/. The measured data agree with the simulation results well, including the power-handling capability. To our knowledge, this study presents low insertion loss, high isolation, and good power performance with the smallest chip size among the previously reported 2.4- and 5.8-GHz CMOS switches.     

$Ka$-Band Low-Loss and High-Isolation Switch Design in 0.13-$mu{hbox {m}}$ CMOS

This paper presents designs and measurements of Ka-band single-pole single-throw (SPST) and single-pole double-throw (SPDT) 0.13-CMOS switches. Designs based on series and shunt switches on low and high substrate resistance networks are presented. It is found that the shunt switch and the series switch with a high substrate resistance network have a lower insertion loss than a standard designs. The shunt SPST switch shows an insertion loss of 1.0 dB and an isolation of 26 dB at >35 GHz. The series SPDT switch with a high substrate resistance network shows excellent performance with 2.2-dB insertion loss and isolation at 35 GHz, and this is achieved using two parallel resonant networks. The series-shunt SPDT switch using deep n-well nMOS transistors for a high substrate resistance network results in an insertion loss and isolation of 2.6 and 27 dB, respectively, at 35 GHz. For series switches, the input 1-dB compression point (1P₁) can be significantly increased to with the use of a high substrate resistance design. In contrast, of shunt switches is limited by the self-biasing effect to 12 dBm independent of the substrate resistance network. The paper shows that, with good design, several 0.13- CMOS designs can be used for state-of-the-art switches at 26-40 GHz.     

5.7 GHz Gilbert I/Q Downconverter Integrated With a Passive LO Quadrature Generator and an RF Marchand Balun

A 5.7 GHz downconversion mixer is demonstrated in this letter using 0.35 mum SiGe BiCMOS technology. A quarter-wavelength coupled line and two center-tapped transformers are utilized to generate differential quadrature LO signals. A miniaturized Marchand balun is placed before the common-base-configured RF input stage of each Gilbert mixer to generate balanced RF signals. All the reactive passive elements are placed directly on the standard silicon substrate. The 5.7 GHz downconverter achieves 7 dB conversion gain, 26dBm _1dB, and 18dBm IIP₃ at the power consumption of 3.875 mW and 2.5 V supply voltage.     

一种DC～5GHz串联微波开关的温度特性和功率处理能力的测试与分析

描述了一种串联微波MEMS开关的设计、制造过程,它制作在玻璃衬底上,采用金铂触点,在DC～5GHz,插损小0.6dB,隔离度大于30dB,开关时间小于30μs.对这种微波开关的温度特性和功率处理能力进行了测试,在DC～4GHz,85℃下的插损增加了0.2dB,-55℃下的插损增加了0.4dB,而隔离度基本保持不变.在开关中流过的连续波功率从10dBm上升到35.1dBm,开关的插损下降了0.1～0.6dB,并且在35.1dBm(3.24W)下开关还能工作.和所报道的并联开关最大处理功率(420mW)相比,该结果说明串联开关具有较大的功率处理能力.     

A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch

A novel loss compensation technique for a series-shunt single-pole double-throw (SPDT) switch is presented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capacitance and a shunt inductance can reduce the impact of the feed forward capacitance to reduce the insertion loss and improve the isolation of the SPDT switch. The measured insertion loss and isolation characteristics of the switch somewhat deviating from the 60 GHz are analyzed revealing that the inaccuracy of the MOS model can greatly degrade the performance of the switch. The switch is implemented in TSMC 90-nm CMOS process and exhibits an isolation of above 27 dB at transmitter mode, and the insertion loss of 1.8-3 dB at 30-65 GHz by layout simulation. The measured insertion loss is 2.45 dB at 52 GHz and keeps<4 dB at 30-64 GHz. The measured isolation is better than 25 dB at 30-64 GHz and the measured return loss is better than 10 dB at 30-65 GHz. A measured input 1 dB gain compression point of the switch is 13 dBm at 52 GHz and 15 dBm at 60 GHz. The simulated switching speed with rise time and fall time are 720 and 520 ps, respectively. The active chip size of the proposed switch is 0.5×0.95 mm².     

A 0.13 μm CMOS UWB RF Transmitter with an On‐Chip T/R Switch

This paper presents a fully integrated 0.13 μm CMOS MB‐OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low‐pass filter, a variable gain amplifier, a voltage‐to‐current converter, an I/Q up‐mixer, a differential‐to‐single‐ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 μm CMOS technology. The fabricated transmitter shows a ?3 dB bandwidth of 550 MHz at each sub‐band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.     

A low-voltage, high-power T/R-switch MMIC using LC resonators

A novel T/R switch is proposed for high-power/low-distortion operation at a low control voltage. LC-resonant switches composed of inductors, capacitors, and switch FET's are incorporated in TX and RX arms to provide a reverse control scheme that removes the rf-voltage limitation in the transmit mode, A 1.9-GHz LC-resonant T/R switch MMIC with a total FET periphery of 3.36 mm exhibits 3rd IMR less than -40 dB for an input power up to 31 dBm when controlled at a V/-2 V. This MMIC occupies an area as small as less than 2×2 mm, This will make it possible to implement advanced T/R-switches at PCS and ISM frequencies below 5 GHz     

Super self-aligned GaAs RF switch IC with 0.25 dB extremely lowinsertion loss for mobile communication systems

An extremely low loss switch IC has been implemented by using a 0.15 μm-gate super self-aligned FET with reduced drain/source area. Both off-state-capacitance and the specific on-resistance of the implemented FET have been dramatically reduced by the novel device structure. The experimentally fabricated switch IC showed the low insertion loss of 0.25 dB at an added power of 35 dBm at a frequency of 0.9 GHz, which is the lowest value ever reported