Low dielectric dissipation and enhanced tunability of Ba0.6Sr0.4TiO3 thin films by the modified composition and multilayer structure

Ba_0.6Sr_0.4Ti_1+yO₃ (BST, y?=?0.1, 0.15, 0.2, 0.25, 0.3) thin films were fabricated on Pt-coated silicon substrates by modified sol-gel techniques. It was found that the tunability of BST thin films and dissipation factor decreased with the increase of Ti content. The multilayer structure of Ba_0.6Sr_0.4Ti_1+yO₃(200 nm)/Ba_0.6Sr_0.4TiO₃(100 nm)/Ba_0.6Sr_0.4Ti_1+yO₃ (200 nm; y?=?0.1, 0.2, 0.25) was designed to enhance the tunability. Our results indicated that the modified composition and multilayer structure were beneficial to lowering the dielectric dissipation and enhancing the tunability simultaneously. The tunability of 26.7% and dielectric dissipation of 0.013 were achieved for modified BST thin films.     

Influence of Al2O3 additive on the dielectric behavior and energy density of Ba0.5Sr0.5TiO3 ceramics

High dense Ba_0.5Sr_0.5TiO₃ ceramics with Al₂O₃ additives have been prepared by a method combined the sol?Cgel process and the solid state reaction. Phase compositions, microstructure and dielectric behaviors are investigated systematically. Our experiment results reveal that the Al₂O₃ additives reduce the dielectric constant slightly and increase the breakdown strength greatly due to the refined microstructure and the formation of the second phases. The estimated energy density of Ba_0.5Sr_0.5TiO₃ ceramics with optimized Al₂O₃ additives is improved by 1.5 times as compared with that of pure Ba_0.5Sr_0.5TiO₃ ceramics.     

Dielectric properties and tunability of BST and BZT thick films for microwave applications

Abstract

Dielectric properties and tunability of Ba_0.60Sr_0.40TiO₃ (BST) and BaZr_0.25Ti_0.75O₃ (BZT) thick films and bulk ceramics have been investigated as a function of temperature (90 K - 320 K) in the kHz region. Thick films show compared to bulk ceramics low permittivity and a very broad ferroelectric phase transition which leads to low temperature dependence of tunability. Tunability of 30% can be achieved with an external field of 2 kV/mm. Measurements in the microwave region adumbrate that the dielectric losses of BZT are about three times higher than that of BST thick films.     

Effect of Ca substitution on microwave dielectric properties of BaV<Subscript>2</Subscript>O<Subscript>6</Subscript> ceramics

Effects of Ca substitution for Ba on the phase composition, microstructure, sintering behavior and microwave dielectric properties of nominal ceramics Ba_1-xCa_xV₂O₆ (0.2?≤?x?≤?0.5) were investigated. The XRD, Raman and SEM results revealed that BaV₂O₆ and CaV₂O₆ composite ceramics were formed. Nominal ceramics Ba_1-xCa_xV₂O₆ could be well densified at about 550 °C via a solid-state reaction method. The microwave dielectric properties exhibited strong dependence on the composition and microstructure. Typically, the Ba_0.7Ca_0.3V₂O₆ ceramics sintered at 550 °C exhibited excellent microwave dielectric properties: ε_r?=?10.9, Qxf?=?17,100 GHz (at 9.9 GHz), and τ_f?=?4 ppm/°C. Meanwhile, Ba_0.7Ca_0.3V₂O₆ ceramics also showed good chemical compatibility with Al electrode. These results indicated that the Ba_0.7Ca_0.3V₂O₆ ceramics could be a promising candidate for the ULTCC technology.     

Dielectric properties of BaTiO3-based ceramics measured up to GHz region

A new measuring method and analyzing procedure were proposed to determine the complex dielectric constant of materials with relatively high dielectric constant by a lumped impedance measurement using impedance analyzer. Samples used for the measurement were (Ba_0.6Sr_0.4)TiO₃ (BST) and Ba(Zr_0.25Ti_0.75)O₃ (BZT) ceramics. Micro planar electrodes were formed on the surface of samples by electron beam lithography followed by lift-off method. Complex admittances of these samples were measured up to 3 GHz at different temperatures. Electromagnetic simulations were performed for determining the relative dielectric constant and dielectric loss. The complex dielectric constant vs frequency curves of Ba(Zr_0.25Ti_0.75)O₃ showed a broad dielectric relaxation, while that of (Ba_0.6Sr_0.4)TiO₃ was almost flat up to 3 GHz on high-temperature side of T _m at which dielectric constant shows maximum value. Dielectric dispersion properties were discussed from the viewpoint of diffuse phase transition in ferroelectrics.     

CHARACTERIZATIONS OF W-DOPED (Ba0.5Sr0.5)TiO3 THIN FILMS USING LaNiO3 ELECTRODE

ABSTRACT

The (Ba_0.5Sr_0.5)TiO₃ thin films were deposited onto LaNiO₃ by RF-magnetron sputtering at 550°C. The influence of W content on microstructure and electrical properties of BST films were investigated. The surface and grain size become smoother and smaller as the W content increased. Besides, the dielectric constant, tunability, dissipation factor, and leakage current decreased when the W content increased. The 1% W is the optimal doping concentration. The resultant BST film, with proper dielectric constant and leakage current, has a tunability of 32%, a dissipation factor of 0.006, a FOM value of 53.3 under applied field of 450 kV/cm.     

Effect of raw material on properties of Ba0.55Sr0.45TiO3/MgO composites

The effect of raw material on properties of Ba_0.55Sr_0.45TiO₃/MgO composites was studied. The Ba_0.55Sr_0.45TiO₃ was prepared by BaCO₃, SrCO₃, TiO₂ and BaTiO₃, SrTiO₃. The MgO was prepared by heavy magnesium oxide, light magnesium oxide and basic magnesium carbonate, respectively. The crystalline phases of all ceramics were the same. Whereas, the grain size, lattice parameters, microwave dielectric properties and tunability of the samples were different. Overall, the Ba_0.55Sr_0.45TiO₃/MgO composites, in which BST were prepared from BaCO₃, SrCO₃ and TiO₂, and MgO was prepared by heavy magnesium oxide, exhibited excellent properties of ?_r = 141.55, Q × f = 905 GHz and n_r = 7.16% (E = 3 kV/mm).     

Effect of microwave sintering on structural, morphological and dielectric properties of Ba(FeNb)0.5O3 ceramics

Polycrystalline Ba(FeNb)_0.5O₃/BFN ceramics were sintered conventionally and in a microwave (MW) furnace, respectively. Conventional and microwave sintering temperatures were same with different soaking times. Microwave sintering of BFN ceramics showed enhanced grain growth with improved dielectric properties. Highest dielectric constant (~29,913 at 1 kHz) at room temperature (RT) was observed in BFN ceramics sintered in MW furnace for 30 min. At RT, a non-Debye type of dielectric relaxation was observed in both conventionally and MW sintered BFN ceramics. The observed giant dielectric constant of conventionally and MW sintered BFN ceramics was attributed to intrinsic (space charge polarization) and extrinsic (Maxwell-Wagner type polarization) effects, respectively.     

Microwave Tunable Properties of Ni-Doped (Ba0.5Sr0.5)TiO3 Thin Films Grown by Pulsed Laser Deposition

(Ba_0.5Sr_0.5)TiO₃ (BST) thin films were deposited by pulsed laser deposition (PLD) and investigated as a function of Ni dopant concentration in low and high frequency regions. In low frequency region (<10 MHz), the Ni-dopant concentration in BST films has a strong influence on the material properties including dielectric and tunable properties. Ni-doped (≤3 mol%) BST films showed denser, smoother morphologies and smaller grain sizes than those with 6 and 12 mol% Ni. Dielectric constant and loss of 3 mol% Ni-doped BST films were about 980 and 0.3%, respectively. In addition, tunability and figure of merit of 3 mol% doped BST films showed maximum values of approximately 39% and 108, respectively. In high frequency region (>1 GHz), the frequency tunability range at center frequency of undoped BST and 3 mol% Ni-doped BST coplanar waveguide (CPW) resonators showed 102 and 152 MHz, respectively at 30 V dc bias. The Ni-doped BST thin films are possible in applications of microwave tunable capacitors.     

Low temperature sintering and microwave dielectric properties of Ba3Ti5Nb6O28 with B2O3 and CuO additions

The low sintering temperature and the good dielectric properties such as high dielectric constant (ε _r ), high quality factor (Q × f), and small temperature coefficient of resonant frequency (TCF) are required for the application of chip passive components in wireless communication low temperature co-fired ceramics (LTCC). In the present study, the sintering behaviors and dielectric properties of Ba₃Ti₅Nb₆O₂₈ ceramics were investigated as a function of B₂O₃-CuO content. The pure Ba₃Ti₅Nb₆O₂₈ system showed a high sintering temperature (1250^∘C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ε _r of 37, TCF of −12 ppm/^∘C. The addition of B₂O₃-CuO was revealed to lower the sintering temperature of Ba₃Ti₅Nb₆O₂₈, 900^∘C and to enhance the microwave dielectric properties: Q × f of 32,500 GHz, ε _r of 40, TCF of 9 ppm/^∘C. From the X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction (XRD) studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.     

Fabrication and dielectric properties of Na0.5Bi0.5Cu3Ti4O12 from co-precipitation method

High dielectric Na_0.5Bi_0.5Cu₃Ti₄O₁₂ (NBCTO) ceramics were firstly prepared by co-precipitation method at low temperature. X-ray diffraction results revealed that pure phase of NBCTO was achieved by calcination at 950 °C for 2 h. Thermo-gravimetric analysis on a dried NBCTO precursor was carried out to study the thermal decomposition process. The microstructure and dielectric properties of NBCTO ceramics sintered at different temperatures were investigated. The results indicate that the sintering temperature has a sensitive influence on the microstructure and dielectric properties. Higher sintering temperature gave rise to increased dielectric constant and dielectric loss of NBCTO samples, and the sample sintered at 975 °C for 8 h exhibits high dielectric constant of 8.3?×?10³ and low dielectric loss of 0.069 at 10 kHz. The dielectric properties were further discussed by the impedance spectroscopy.     

Phase transition,microstructure and properties of (Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>)<Subscript>1-x</Subscript>Ba<Subscript>x</Subscript>TiO<Subscript>3</Subscript> lead-free piezoelectric ceramics

In this article, (Na_0.5Bi_0.5)_1-xBa_xTiO₃ lead-free piezoelectric ceramics were prepared by solid-state reaction. The influence of Ba contents on phase structures, compositional distribution and electrical properties of (Na_0.5Bi_0.5)_1-xBa_xTiO₃ ceramics were systematically investigated to further understand the nature of phase transition. It was found that the phase structure of (Na_0.5Bi_0.5)_1-xBa_xTiO₃ transforms from rhombohedral to tetragonal symmetry at x = 0.06 ~ 0.07 and Ba²⁺ segregation forms the coexistence of Ba-rich tetragonal and Ba-deficient rhombohedral phases close to MPB. The electrical properties of prepared samples regularly changed with Ba content, which is closely related to the distribution of rhombohedral and tetragonal phases. The prepared sample near MPB exhibited the largest dielectric constant and the excellent piezoelectric properties (the maximal measuring field reached 78 kV/cm and the piezoelectric constant d ₃₃ = 151pC/N).     

Deposition and characterization of low-loss epitaxial non-linear dielectric thin films for microwave devices

Abstract

Oxide ferroelectric thin films for frequency-tunable microwave devices, in which the dielectric constant of the non-linear dielectric is varied by application of electric fields, have been deposited using PLD. We have fabricated single phase epitaxial Ba_0.6Sr_0.4TiO₃ and KTaO₃ thin film capacitors for applications at 300K and 77K, respectively. Single phase KTaO₃ films were obtained only with excess potassium source in the target along with KTaO₃ perovskite phase. The films have been characterized for structure and morphology by X-ray diffraction and AFM. The dielectric properties were measured in the low frequency range from 100 kHz to 10 MHz, using interdigitated capacitors. Low loss tangents (0.002 at 300K) were observed for highly oriented Ba_0.6Sr_0.4TiO₃ films. The importance of low losses for various devices is discussed and the dielectric constants, loss tangents and tunability of these films are reported in this paper.     

Microstructure and dielectric properties of ferroelectric barium strontium titanate ceramics prepared by hydrothermal method

Ba _x Sr_1-x TiO₃, nanoparticles with different Ba compositions were synthesized by a hydrothermal method. The mechanism of hydrothermal reactions was discussed based on DTA/TG, XRD and TEM characterizations. The result showed that perovskite structure was developed through the mutual diffusion between the intermediate phases and TiO₂ phase. The grain size of the Ba_0.77Sr_0.23TiO₃ (BST77) powders was about 20–40 nm. BST ceramics were made from the hydrothermal-derived BST powders and the dielectric properties of the BST ceramics were measured. Due to the small grain size and active surface energy of the BST powders prepared by hydrothermal method, the BST ceramics showed low sintering temperature. It was found that the BST77 ceramics sintered at 1280 °C showed dielectric constant peak dispersion which was believed to be caused by dimension domino effect.     

Effects of co-doped CaO/MnO on the piezoelectric/dielectric properties and phase transition of lead-Free (Bi0.5Na0.5)0.94Ba0.06TiO3 piezoelectric ceramics

The piezoelectric properties of (1?x)(Bi_0.5Na_0.5)TiO₃-xBaTiO₃ ceramics were reported and their piezoelectric properties reach extreme values near the MPB (about x?=?0.06). The X-ray analysis of (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ ceramics for all compositions exhibited a pure perovskite structure without any secondary phase. Within a certain ratio of contents, the co-doped ceramics enhanced piezoelectric coefficient (d ₃₃ ), lowered the dielectric loss, and increased the sintered density. The temperature dependence of relative dielectric permittivity (K ₃₃ ^T ) reveals that the solid solutions experience two phase transitions, ferroelectric to anti-ferroelectric and anti-ferroelectric to relaxor ferroelectric, which can be proven by P-E hysteresis loops at different temperatures. In addition, the specimen containing 0.04/0.01 wt.% CaO/MnO showed that the coercive field E _c was a minimum value of 26.7 kV/cm, while the remnant polarization P _r was a maximum value of 38.7 μC/cm², corresponding to the enhancement of piezoelectric constant d₃₃ of 179 pC/N, electromechanical coupling factor k _p of 37.3%, and relative dielectric permittivity K ₃₃ ^T of 1137. (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ ceramics co-doped with CaO/MnO were considered to be a new and promising candidate for lead-free piezoelectric ceramics owing to their excellent piezoelectric/dielectric properties, which are superior to an un-doped BNBT system.     

Structure and dielectric properties of Ca-doped (Ba0.7Sr0.3) TiO3 thin films fabricated by sol–gel method

A wide range of Ca-doped (Ba_0.7Sr_0.3)TiO₃ (BST) thin films (from 0 to 20 mol%) have been prepared on Pt/Ti/SiO₂/Si (100) substrates by sol–gel technique. The structural and dielectric properties of BST thin films were investigated as a function of Ca dopant concentration. The results showed that the microstructure and dielectric properties of the BST films were strongly dependent on the Ca contents. With the Ca dopant concentration increasing, the grain size, dielectric constant and dielectric loss of the BST thin films decreased. As the content of Ca dopant reaches 10 mol%, the dielectric constant, dielectric loss, tunability, the value of FOM and the leakage current density are 281, 0.0136, 16.7%, 12.3 and 5.5?×?10^?6 A/cm², respectively.     

Phase compositions and microwave dielectric properties of MgTiO<Subscript>3</Subscript>-based ceramics obtained by reaction-sintering method

MgTiO₃-based microwave dielectric ceramics were prepared successfully by reaction sintering method. The X-ray diffraction patterns of the sintered samples revealed a major phase of MgTiO₃-based and CaTiO₃ phases, accompanied with Mg₂TiO₄ or MgTi₂O₅ determined by the sintering temperature and time. The microwave dielectric properties had a strong dependence of sintering condition due to the different phase compositions and the microstructure characteristics. The ceramics sintered at 1360 °C for 4 h exhibited good microwave dielectric properties: a dielectric constant of 20.3, a high quality factor of 48,723 GHz (at 9GHz), and a temperature coefficient of resonant frequency of ?1.8 ppm/^oC. The obtained results demonstrated that the reaction-sintering process is a simple and effective method to prepare the MgTiO₃-based ceramics for microwave applications.     

Enhanced dielectric properties of low-temperature-sintered Ba0.6Sr0.4TiO3 thick films

Ba_0.6Sr_0.4TiO₃ thick films were fabricated at a lower temperature of 880°C by adding Li₂O as sintering aid. A novel pretreatment of cold isostatic pressing was introduced to enhance the quality of films. After cold isostatic pressing prior to annealing, the thick film had a more compact morphology and better dielectric properties. The permittivity and tunability were increased to 1,318 and 19.04% from 925 and 14.81% while the dielectric loss was still kept low (1 MHz, 16 kV/cm). The enhanced properties and low-temperature sintering made BST thick films a potential candidate for Low Temperature Co-fired Ceramic (LTCC) and microwave tunable devices.     

Liquid phase effect of La2O3 and V2O5 on microwave dielectric properties of Mg2TiO4 ceramics

Dielectric ceramics of Mg₂TiO₄ (MTO) were prepared by solid-state reaction method with 0.5–1.5 wt.% of La₂O₃ or V₂O₅ as sintering aid. The influences of La₂O₃ and V₂O₅ additives on the densification, microstructure and microwave dielectric properties of MTO ceramics were investigated. It is found that La₂O₃ and V₂O₅ additives lowered the sintering temperature of MTO ceramics to 1300 °C and 1250 °C respectively, whereas the pure MTO exhibits highest density at 1400 °C. The reduction in sintering temperature with these additives was attributed to the liquid phase effect. The average grain sizes of the MTO ceramics added with La₂O₃, and V₂O₅ found to decrease with an increase in wt%. The dielectric constant (ε_r) was not significantly changed, while unloaded Q values were affected with these additives, and the values were in the range of 92,000–157,550 GHz and 98,000–168,000 GHz with the addition of La₂O₃ and V₂O₅, respectively. The dielectric properties are strongly dependent on the densification and the microstructure of the MTO ceramics. The decrease in Q×f _o value at higher concentration of La₂O₃ and V₂O₅ addition was owing to inhomogeneous grain growth and the liquid phase which is segregated at the grain boundary. In comparison with pure MTO ceramics, La₂O₃ and V₂O₅ additives effectively improved the densification and dielectric properties with lowering of sintering temperature. The proposed loss mechanisms suggest that the oxygen vacancies and the average grain sizes are the influencing factors in the dielectric loss of MTO ceramics.     

Dielectric and ferroelectric properties of Nb-doped Ba0.8Sr0.2TiO3 ceramics

Ferroelectric and dielectric properties were investigated for Ba_0.8Sr_0.2Ti_(1?5/4x)Nb _x O₃ ceramics with different Nb₂O₅ concentrations. The relations between the ceramic structures and those properties were discussed. The Ba_0.8Sr_0.2TiO₃ doping with 0.01mol% Nb₂O₅ appears to have a strong ferroelectric effect and better dielectric properties. The max permittivity (? _max) is up to 7,521.3 and Ba_0.8Sr_0.2Ti_(1?5/4x)Nb _x O₃ ceramics has higher permittivity even at room temperature. The permittivity presents broadened curves at large temperature ranges, which suggests a non Curie–Weiss behavior near the transition temperature. The diffuse phase transition coefficient (δ) for Ba_0.8Sr_0.2Ti_(1?5/4x)Nb _x O₃ doping with 0.01mol% Nb₂O₅ reaches 0.098, and its P–E loop expresses a diffusing curve. The remanent polarization (2P _r) and coercive field are 31.3 μC/cm² and 10 kV/cm, respectively. The P–E loop presents a diffusing curve, which is relative to the relaxor characteristic.