SiC MOSFET特性分析及应用

碳化硅MOSFET因其材料的特殊性,适合高压、高频和高功率密度场合。该文设计一种碳化硅MOSFET的驱动电路,通过软件PSpice对碳化硅MOSFET以及碳化硅肖特基二极管的开关特性进行仿真研究,并设计RC缓冲电路解决开关的尖峰震荡问题。搭建硬件实验电路,在Buck电路中针对碳化硅MOSFET和Si IGBT在不同负载和占空比下进行电路效率分析。实验结果表明碳化硅MOSFET开关速度快、开关损耗小以及驱动电阻小。碳化硅肖特基二极管无反向恢复特性,适合高频下工作。RC缓冲电路能有效抑制开关产生的尖峰和震荡,在Buck电路中碳化硅MOSFET比Si IGBT在不同负载和占空比下效率要高。     

电容模块在缓冲电路中的应用

讨论了IGBT模块缓冲电路的缓冲原理,给出了在种通用的IGBT缓冲电路,并介绍了美国CDE公司的三种电容模块的基本参数和特点以及在缓冲电路中的应用。     

基于Simulink的改进Z源逆变器的设计

与传统逆变器相比,文章提出的改进型Z源逆变器不仅可以减小电容和电感,同时电容的电压应力得到有效降低。文中首先对其电路工作原理进行分析,得到各参数的设计方法,再由计算及仿真,推算出开关管上的电流应力确实有效降低,并在Simulink中验证了该改进型Z源设计的合理性。     

基于Saber的IGBT逆变桥无损缓冲电路的仿真分析

IGBT(绝缘栅双极型晶体管)缓冲电路对抑制IGBT开关过程中产生的尖峰电压具有重要作用。本文通过分析无损缓冲电路的原理及特点,结合原有RCD缓冲电路,探索研究了一种新的适用于IGBT逆变桥的无损缓冲电路,并采用Saber软件对两种电路进行了仿真分析,对比比较了两种缓冲吸收电路的优缺点。仿真结果验证了新无损缓冲电路抑制IGBT关断过电压的可靠性。     

美国CDE电容模块在缓冲电路中的应用

简要讨论了IGBT模块缓冲电路的有关问题,并介绍了美国CDE电容模块在缓冲电路中的应用。     

IGBT构成的交流传动逆变器的设计

分析了IGBT构成的交流传动逆变器的主电路原理、逆变电路结构及缓冲保护电路结构,并对主电路的安装布局以及电压电流参数的选取做出了说明,同时提出了一种由M57959构成的IGBT驱动电路的设计,该电路对逆变器的设计有一定的应用价值.     

CDE电容模块在缓冲电路中的应用

简要讲座了了IGBT模块缓冲电路的有关问题，并介绍了美国CDE公司的电容模块在缓冲电路中的应用。     

TG-900IGBT高频感应加热电源通过鉴定

TG-90IGBT高频感应加热电源是天津大学电力电子应用技术研究所，承担的天津市对世纪青年科学基金项目．1998年7月2日通过了由姚建铨院士组成的鉴定委员会的鉴定TG-90IGBT高频感应加热电源，摒弃了传统的感应加热电源，采用晶闸管相控整流调节逆变器电压来调节功率．整流部分直接采用二极管三相桥式整流，通过电容滤波为这变器提供一稳定的电压源，同时大大提高了功率因数，使之达到0．95以上．逆变部分采用以绝缘栅双极晶体管（IGBT）为功率开关器件的串联谐振逆变电路通过逆变器的拓扑结构，构成闭环控制系统，保证了逆变器工作频率…     

中小功率三相高频节能型谐振极逆变器

作为中小功率发电系统重要环节的三相逆变器的开关频率增大时,开关损耗也显著增大,不利于节能。为实现中小功率三相逆变器的高频化和节能化,提出了一种三相零电压开关谐振极逆变器拓扑结构.当桥臂上的辅助谐振电路处于工作状态时,开关器件并联的电容的电压能周期性变化到零,使开关器件完成零电压软切换,这有利于高频金属氧化物半导体场效应晶体管（Metal Oxide Semiconductor Field Effect Transistor,MOSFET）作为逆变器的开关器件.分析了电路的工作流程,实验结果表明开关器件处于零电压软切换.因此,该拓扑结构对于研发高性能的中小功率三相逆变器具有参考价值.     

一种基于直流输电中反激式逆变器功率解耦控制研究

针对直流输电并网系统中反激式逆变器存在大量二倍于工频谐波分量等问题,提出了一种新型反激式逆变器解耦电路,从而减少了母线和直流侧二次谐波分量。通过主动控制功率解耦电路中开关管开断,研究解耦电容充电模式和放电模式的4个工作阶段,使得储能电容可以有效地依次放电。最终,通过仿真和实验结果一致可以稳定输出100 Hz和100 V电压,表明该解耦方法的有效性和合理性。     

Modeling buffer layer IGBTs for circuit simulation

The dynamic behavior of commercially available buffer layer IGBTs is described. It is shown that buffer layer IGBTs become much faster at high voltages than nonbuffer layer IGBTs with similar low voltage characteristics. Because the fall times specified in manufacturers' data sheets do not reflect the voltage dependence of switching speed, a new method of selecting devices for different circuit applications is suggested. A buffer layer IGBT model is developed and implemented into the Saber circuit simulator, and a procedure is developed to extract the model parameters for buffer layer IGBTs. It is shown that the new buffer layer IGBT model can be used to describe the dynamic behavior and power dissipation of buffer layer IGBTs in user-defined application circuits. The results of the buffer layer IGBT model are verified using commercially available IGBTs     

节能型单相全桥零电流开关谐振极逆变器

为改善以绝缘栅双极型晶体管（Insulated Gate Bipolar Transistor,IGBT）作为开关器件的单相全桥逆变器的效率,提出了一种节能型单相全桥零电流开关谐振极逆变器,在每个桥臂上分别并联1组辅助电路.在工作过程中,主开关和辅助开关都能完成零电流软切换,可消除IGBT拖尾电流造成的关断损耗.分析了电路工作过程,在2kW样机上的实验结果表明开关器件实现了零电流软切换.因此,该拓扑结构可实现以IGBT作为开关器件的单相全桥逆变器的节能运行.     

新型三相谐振极软开关逆变器

为提高三相逆变器的转换效率,提出了一种新型三相谐振极软开关逆变器拓扑结构,通过在每相桥臂上增加结构简单的辅助电路,实现了主开关的零电压软开通和零电流软关断.逆变器主开关采用金属氧化物半导体场效应晶体管（Metal Oxide Semiconductor Field Effect Transistor,MOSFET）或者绝缘栅双极型晶体管（Insulated Gate Bipolar Transistor,IGBT）时,都能实现无损耗切换,解决了MOSFET内部结电容造成的容性开通损耗问题和IGBT拖尾电流造成的关断损耗问题.分析了电路的工作过程,实验结果表明开关器件完成了软切换.因此,该拓扑结构对于提高逆变器的性能具有重要意义.     

IR2132驱动器及其在三相逆变器中的应用

提出了IR2132驱动器在三相逆变器中的应用。采用数字信号处理器对电源系统进行全数字控制,通过改变PWM波形的脉冲宽度和调制周期可以达到调压和变频的目的。采用功率MOSFET和IGBT专用驱动芯片IR2132驱动三相桥式逆变电路。介绍了IR2132驱动电路的特点、内部结构、工作原理和基于IR2132构成的三相逆变电路结构,并提出了一种新型实用的预制相位PWM数字控制方案,取代了传统的模拟驱动电路和模块化桥臂电路设计,降低了开发成本,并融合了多元化的保护功能使逆变电源系统的驱动电路变得简单可靠。     

Coreless printed circuit board (PCB) transformers for powerMOSFET/IGBT gate drive circuits

Gate drive circuits for modern power electronic switches, such as MOSFET and insulated gate bipolar transistor (IGBT), often require electrical isolation. This paper describes the modeling and experimental results of some coreless printed circuit board (PCB)-based transformers that can be used for MOSFET and IGBT devices at high-frequency (500 kHz to 2 MHz) operation. PCB-based transformers do not require the manual winding procedure and thus simplify the manufacturing process of transformer-isolated gate drive circuits. With no core loss, coreless transformers are found to have favorable characteristics at high-frequency operations. This project demonstrates an important point that the size of the magnetic core can approach zero and become zero when the frequency is sufficiently high     

节能型三相桥式零电流开关整流器

为使三相桥式整流器实现节能运行,提出了一种节能型三相桥式零电流开关整流器拓扑结构,在各相桥臂上的辅助谐振电路处于工作状态时,整流器的开关器件能完成零电流软关断.三相桥式整流器通常以绝缘栅双极型晶体管（Insulated Gate Bipolar Transistor,IGBT）作为开关器件,实现零电流软关断能消除IGBT拖尾电流产生的关断损耗.分析了电路工作过程,在三相3kW样机上的实验结果表明开关器件实现了零电流软切换.因此,该拓扑结构可实现以IGBT作为开关器件的三相桥式整流器的节能运行.     

IGBT集成驱动电路及其功率扩展

针对大容量IGBT的实际应用特点,介绍了EXB841,M57962,HL402,HCPL316J,2SD315A五种常用的集成专用驱动电路,分析了各自的工作原理和过电流保护动作过程,给出了多种适于驱动大容量IGBT的实用扩展电路。     

辅助电路与主开关并联的单相全桥节能逆变器

为了改善逆变器的性能,提出了一种辅助电路与主开关并联的单相全桥节能逆变器.逆变器采用受限单极式正弦脉宽调制（Sinusoidal Pulse Width Modulation,SPWM）方法,在每个开关周期,只需要控制1个主开关和1个辅助开关的切换,辅助开关可以采用固定占空比控制,而且不需要设定谐振电流阈值来控制辅助开关.在每个开关周期的换流过程中,需要切换的主开关所并联的谐振电容的电压能变化到零,主开关能实现零电压软开通.辅助电路中无器件直接串联在直流母线上,可有效降低辅助电路通态损耗.分析了电路工作原理,实验结果表明主开关和辅助开关都实现了软切换.因此该拓扑能有效降低开关损耗和提高逆变器效率.     

The novel resonant DC link three-level soft-switching inverter

ABSTRACT

In the paper, the novel topology of the resonant DC link three-level soft-switching inverter is proposed to reduce switching losses and improve the efficiency of three-level inverter at high switching frequency. Symmetrical auxiliary resonant circuits are set in the DC link of three-level hard-switching inverter. Moreover, the terminal voltage of the resonant capacitors between the DC buses periodically drops to zero via the resonance of auxiliary circuits. Furthermore, under such condition, the main switches of the three-level inverter would be operated, in order to achieve zero-voltage switching. Based on the equivalent circuits in different operating modes, the paper analyses the working process of the soft-switching inverter in detail. In addition, a 3 kW laboratory prototype of resonant DC link three-phase three-level soft-switching inverter is built. The experimental results show that the main switches and auxiliary switches of the inverter are operated under soft-switching conditions, and the efficiency is significantly improved compared with the three-level hard-switching inverter. Therefore, the proposed topology can effectively reduce switching losses and prove to be more practical in engineering.     

A high switching frequency IGBT PWM rectifier/inverter system forAC motor drives operating from single phase supply

A pulse width modulated (PWM) rectifier/inverter system using insulated gate bipolar transistors (IGBTs), capable of switching at 20 kHz is reported. The base drive circuit for the IGBT, incorporating short-circuit protection, is presented. The inverter uses an Undeland snubber together with a simple energy recovery circuit, which ensures reliable and efficient operation even for 20 kHz switching. The front end for the system is a regenerative single phase full bridge IGBT inverter along with an AC reactor. Steady-state design considerations are explained, and control techniques for unity power factor operation and fast current control of the front end power converter, in a rotating as well as a stationary reference frame, are discussed and compared. Results from computer simulations and experimental results for a 1.5 kW prototype system are presented