不同温度下氮化铬薄膜的疏水性能研究

利用电弧离子镀膜技术,以硅片、不锈钢、玻璃片为基底,在脉冲偏压分别为50 V、100 V、150 V的条件下制备了三组氮化铬薄膜样品,对其物相、表面形貌、力学性能及不同温度下的疏水性能进行了分析研究。结果表明：所制备薄膜样品组分单一,表面存在些许“大颗粒”,当脉冲偏压为100 V时“大颗粒”数量最多;氮化铬薄膜力学性能优良,150 V脉冲偏压下沉积的薄膜具有较高的硬度和杨氏模量,50 V脉冲偏压样品具有较高的膜基结合力;常温（20℃）下薄膜疏水性均较好,基底材料对疏水性能影响不大;各组薄膜疏水性能随环境温度的增加而降低,当环境温度上升至80℃时脉冲偏压为50 V的薄膜丧失疏水性能,脉冲偏压为100 V的薄膜样品疏水性能整体较优。     

基片偏压对直流反应磁控溅射CNx薄膜性能的影响

采用直流反应磁控溅射方法,在不同偏压条件下,在硬质合金基片(YG8 WC 8%Co)上沉积了氮化碳薄膜,并通过X光电子能谱仪、涂层附着力自动划痕仪和摩擦磨损试验机研究了CNx薄膜与基体的附着力及其摩擦学性能.结果表明,基片偏压对附着力和薄膜的摩擦学性能有一定的影响,在偏压为-100 V时沉积的CNx薄膜摩擦系数较小,具有良好的减摩作用,对硬质合金的附着力最好.     

磁场增强的碳阴极弧沉积ta-C薄膜的基体偏压效应

利用磁场增强的石墨阴极弧在Si片和M2高速钢上沉积了ta-C薄膜,重点研究了基体偏压对膜层截面形貌、沉积速率、膜层结构、耐腐蚀性能和摩擦系数的影响。结果发现,在-100V偏压下膜层较为致密,缺陷较少;基体偏压增加,膜层沉积速率增加;拉曼光谱分析显示,在-100V偏压下ID/IG值最小(0.4),表明sp3键含量最高;平衡腐蚀电位随基体偏压先升高后降低,在-100V时最大;膜层耐蚀性提高3倍;摩擦副采用Al2O3,在-100V偏压下摩擦系数最低。     

用XPS和AFM等方法研究氮化钛薄膜的物理化学特性

采用反应非平衡磁控溅射方法制备了氮化钛(TiN)薄膜,沉积时的衬底偏压的范围从0V到-500 V.实验结果表明:TiN薄膜的物理特性和力学性能随衬底偏压变化,最佳的薄膜硬度与弹性模量在偏压为-100 V时得到.AFM的测量结果显示薄膜的表面形貌和粗糙度随衬底偏压变化有一个非线性的变化趋势,同样的趋势也出现在Ti2p和N1s的芯态能谱上.特定谱峰的强度和位置的变化预示着偏压引起的薄膜成分和化学态的变化,XPS的结果表明:适当的偏压有助于TiN的成键,稳定的化学结构防止了表面的氧化和扩散,抑制了杂质和缺陷的形成,良好的机械特性归于表面形貌的改善.     

辅助离子束功率密度对透明塑料上室温磁控溅射沉积ITO薄膜结构和形貌的影响

基于双极脉冲磁控溅射复合离子束辅助沉积的新工艺,在透明塑料聚碳酸酯基片上,常温制备了透明导电的铟锡氧化物(ITO)薄膜.重点研究了不同辅助离子束功率密度对ITO薄膜晶体结构和表面形貌的影响.结果表明当离子束功率密度从52 mW/cm2逐渐增加到436 mW/cm2时,薄膜逐渐从非晶态转变为微晶态、直至长大为多晶态,晶体呈现(222)择优取向;薄膜在非晶态时表面相对平坦,随着晶粒的长大,表面均方根粗糙度Rq增加,并在离子束功率密度为436 mW/cm2时最大.离子束功率密度进一步增大到680 mW/cm2时,薄膜的晶体衍射峰强度变弱、峰的半高宽变大,表明晶粒尺寸变小;薄膜表面均方根粗糙度下降.离子束功率密度为252 mW/cm2,ITO薄膜具有最佳综合光电性能.     

脉冲偏压对304不锈钢表面多弧离子镀CrAlN薄膜结构和耐蚀性能的影响

目前,鲜见有关脉冲偏压对多弧离子镀Cr Al N薄膜耐蚀性能影响的报道。以不同的脉冲偏压在304不锈钢表面多弧离子镀Cr Al N薄膜。采用扫描电镜、显微镜、X射线衍射仪、硬度仪、粗糙度仪分析了Cr Al N薄膜的表面形貌、相结构、硬度、表面粗糙度及耐蚀性能,分析了脉冲偏压对相关性能的影响。结果表明:随着脉冲偏压幅值的增大,Cr Al N薄膜表面大颗粒及凹坑尺寸和数量减少,薄膜质量提高;Cr Al N薄膜主要由(Cr,Al)N相组成,随着偏压增加,Cr Al N薄膜出现(220)择优取向;Cr Al N薄膜表面粗糙度随脉冲偏压增大而减小,显微硬度随脉冲偏压的增大而增大;Cr Al N薄膜在3.5%Na Cl溶液中的耐蚀性随着脉冲偏压的增大而增大,脉冲偏压为400 V时,Cr Al N薄膜与基体304不锈钢的腐蚀速率之比为0.34,薄膜的综合性能最好。     

衬底负偏压对线性离子束DLC膜微结构和物性的影响

采用一种新型线性离子束PVD技术制备出大面积类金刚石薄膜(DLC膜),研究了衬底负偏压对薄膜微结构和物性的影响.结果表明:制备出的类金刚石薄膜在300 mm×100 mm范围内纵向厚度均方差约10-12 nm,横向薄膜厚度均方差约2-4 nm.随着衬底偏压的提高,薄膜中sp~3键的含量先增加后减小,在衬底偏压为-100 V时sp~3键的含量最大;DLC膜的残余应力、硬度和弹性模量与sp~3键的含量呈近似线性的关系,在衬底偏压为-100 V时其最大值分别为3.1 GPa、26 GPa和230 GPa.DLC薄膜的摩擦学性能与薄膜中sp~3碳杂化键的含量密切相关,但是受衬底偏压的影响不大,其摩擦系数大多小于0.25.偏压对磨损的影响很大,在偏压比较低(0～-200 V)时,薄膜的磨损率约为10~(-8)mm~3/N·m,偏压升高到300 V磨损率急剧提高到10~(-7)mm~3/N·m.     

偏压对CrAlTi(Ce)N薄膜的制备和性能的影响

本文通过使用Teer-UDP450磁控溅射设备制备CrAlTi(Ce)N薄膜,实验过程中改变偏压。使用了原子力显微镜、X射线衍射仪对CrAlTi(Ce)N薄膜进行分析和研究。试验结果表明:CrAlTi(Ce)N薄膜生长速度随着偏压值的增加而减小;CrAlTi(Ce)N薄膜中XRD衍射峰发生变化,偏压值从60 V升高到100 V,(111)峰择优生长趋势明显,偏压120 V时出现非晶态;CrAlTi(Ce)N薄膜的粗糙度随着偏压值的增加而降低;CrAlTi(Ce)N薄膜的柱状晶尺寸随着偏压值的升高而减小,但当偏压值为120V时,CrAlTi(Ce)N薄膜为非柱状晶结构,CrAlTi(Ce)N薄膜表面出现弹坑形状。     

基体偏压对中频磁控溅射沉积DLC膜结构的影响

利用中频非平衡磁控溅射技术,以氩气和甲烷混合气体为工作气体,在载玻片和单品硅片上沉积含氢的类金刚石簿膜.改变加载在基体上的负偏压,在0～400 V范围内,制备5种偏压值下的薄膜,研究偏压对薄膜结构的影响.用光学显微镜和AFM考察薄膜的光学形貌;激光Raman谱定性分析膜的化学组分;VFIR分析其C-H键合类型;纳米压痕法测量膜的硬度.结果表明:当基体上施加偏压-100 V时,可以有效地提高沉积粒子与基体结合力以及溥膜的致密性,薄膜中正四面体的sp3结构和sp3CHn含最增加,纳米硬度提高.     

脉冲负偏压对直流磁控溅射碳膜结构和性能的影响

通过直流磁控溅射技术在基体(硅片、高速钢、钢片)上沉积碳膜。保持其它工艺参数基本恒定,探究薄膜在100V-400V脉冲负偏压下,结构和性能的变化规律。实验结果表明,这种碳膜为非晶态硬质薄膜,具有较好表面形貌,且随着脉冲偏压数值的逐渐增加,其厚度、沉积速率和硬度均呈现先增大后减小的趋势,而摩擦系数则先减小后增大。当脉冲负偏压为200 V时,薄膜具有最佳的力学性能。     

直流磁控溅射功率对ITO薄膜光学性能的影响

本实验的ITO薄膜样品是利用直流磁控溅射技术在玻璃基片上沉积而成的。通过改变溅射功率,研究不同溅射功率对ITO薄膜光学性能的影响。经各实验测试后发现：在实验给定的功率区间内,ITO薄膜的厚度随着溅射功率的增加而增加,其可见光透过率则随之降低。     

Growth of ITO thin films by magnetron sputtering: OES study,opticaland electrical properties

In this work tin doped indium oxide (ITO) thin films were deposited onto soda lime glass substrates by the direct current magnetron sputtering system analyzing process of deposition with optical emission spectroscopy (OES). The dependence of electro-optical characteristics of the deposited films on the sputtering pressure, O₂/Ar working gas flow ratio and the discharge power was investigated. Transparency of the ITO films was measured using the ultraviolet and visible light spectrometer (UV–vis). The X-Ray photoelectron spectroscopy (XPS) method was applied for analysis of thin films surface chemical composition. It was found that in-situ measurement of plasma emission spectra allowed prediction and control of parameters of ITO thin films, namely resistivity and transparency. The correlation between the thin films resistivity, optical transparency and kinetics of deposition was examined.     

磁控溅射制备ITO薄膜光电性能的研究

采用直流磁控溅射方法在玻璃基底上制备了ITO薄膜.分别用分光光度计和四探针仪测试了所制备ITO薄膜在可见光区域内的透过率和电阻率,研究了溅射气压、氧氩流量比和溅射功率三个工艺参数对ITO薄膜光电性能的影响.研究结果表明,制备ITO薄膜的最佳工艺参数为:溅射气压0.6 Pa,氧氩流量比1:40,溅射功率108 W.采用此工艺参数制备的ITO薄膜在可见光区平均透过率为81.18％,薄膜电阻率为8.9197×10-3Ω·cm.     

磁控溅射低温沉积ITO薄膜及其光电特性研究

采用直流反应磁控溅射法低温沉积ITO薄膜,用XRD、SEM和UV—Vis分别表征ITO薄膜的晶体结构、表面形貌及其紫外-可见光吸收谱,研究了氧分压、溅射功率及薄膜厚度等工艺参数对薄膜光电性能的影响,结果表明,氧分压过大时,ITO薄膜中有大量的位错和缺陷,使薄膜的电阻率变大,导电性变差;氧分压过小时,薄膜中将有大量氧空位产生,导致晶格变形,使电阻率增加。随着溅射功率增大,在相同时间内薄膜厚度增加,方块电阻减小,薄膜电阻率降低。随着薄膜厚度增加,制备的薄膜晶体结构相对完整,载流子浓度和迁移率逐渐增大,薄膜电阻率变小,进而对样品的光电性能产生明显影响。     

Growth and characterization of indium tin oxide thin films deposited on PET substrates

Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 × 10^− 3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters.     

Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target

Indium tin oxide (ITO) thin films were deposited on quartz substrates by radio frequency (RF) sputtering with different RF power (100–250 W) using the powder target at room temperature. The effect of sputtering power on their structural, electrical and optical properties was systematically investigated. The intensity of (400) orientation clearly increases with the sputtering power increases, although the films have (222) preferred orientation. Increasing sputtering power is benefit for lower resistivity and transmittance. The films were annealed at different temperature (500–800 °C), then we explored the relationship between their electro-optical and structural properties and temperature. It has been observed that the annealed films tend to have (400) orientation and then show the lower resistivity and transmittance. The ITO thin film prepared by RF sputtering using powder target at 700 °C annealing temperature and 200 W sputtering power has the resistivity of 2.08 × 10^?4 Ω cm and the transmittance of 83.2 %, which specializes for the transparent conductive layers.     

溅射功率和氧分压对ITO薄膜光电性能的影响研究

采用直流反应磁控溅射法制备了氧化铟锡(ITO)透明导电薄膜,通过四探针、紫外可见分光光度计、X射线衍射(XRD)、霍尔效应仪、扫描电镜(SEM)等对薄膜样品进行了表征,研究了溅射功率和氧分压对ITO薄膜微观结构和光电性能的影响,结果表明:溅射功率对ITO的光电性能影响较小,沉积速率随着溅射功率的增大而加快;随着氧分压的升高,载流子浓度降低,霍尔迁移率先增大后减小,电阻率逐渐增大。在优化的工艺条件下,制备了在可见光区平均透过率达85%、电阻率为1×10-4Ω.cm的光电性能优良的ITO薄膜。     

Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering

High rate deposition of ITO thin films at a low substrate temperature was attempted by using a facing target sputtering (FTS) system. Deposition rate as high as 53 nm/min was realized on polycarbonate film substrate of 80-μm thickness. When the film was deposited at a deposition rate above 80 nm/min, polycarbonate film substrate was thermally damaged. The film deposited by FTS has much smaller compressive film stress than the film deposited by conventional magnetron sputtering. The film stress was reduced significantly by increasing the sputtering gas pressure and stress-free films can be obtained by adjusting the sputtering gas pressure. This may be mainly caused by the fact that bombardment by high energy negative oxygen ions to substrate surface during deposition can be completely suppressed in the FTS. Film structure and electrical properties changed little with substrate position, and uniform films were obtained by the FTS.     

退火对反应磁控溅射制备ITO薄膜性能影响

采用铟锡合金靶 (铟 锡 ,90 - 10 ) ,通过直流反应磁控溅射在玻璃基片上制备出ITO薄膜 ,并在大气环境下高温退火处理。研究了退火温度对薄膜结构、光学和电学性能的影响。研究表明 ,随着退火温度升高薄膜的电学特性得到很大提高     

Influence of the sputtering system''s vacuum level on the properties of indium tin oxide films

The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Corning glass using In₂O₃:SnO₂ target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm² and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%.