KTP晶体倍频器件的1.064μm和0.532μm双波长增透膜

本文介绍KTP(KTiOPO4)倍频晶体端面等厚度三层倍频双波长增透膜的设计和制备工艺。该膜系结构和制备工艺简单,重复性好,在1.064μm和0.532μm的剩余反射率做到0.15%～0.20%。     

KTP晶体倍频器件的1.064μm和0.532μm双波长增透膜

本文介绍KTP(KTiOPO_4)倍频晶体端面等厚度三层倍频双波长增透膜的设计和制备工艺。该膜系结构和制备工艺简单,重复性好,在1.064μm和0.532μm的剩余反射率做到0.15％～0.20％。     

LD泵浦NYAB自倍频激光器和双波长激光器的实验研究

研制出国内第一台用LD泵浦的NYAB自倍频激光器和双波长激光器。采用直接耦合方式进行端面泵浦。自倍频激光器产生0.531μm的绿色激光,基横模运转,阈值泵浦功率为14.31mW,输出功率达2.2mW,斜效率达2.1％。双波长激光器同时产生0.531μm的绿色激光和1.062μm的近红外激光,基横模运转,阈值泵涌功率力14.81mW,输出功率达9.2mW,斜效率达7％。     

我国制成新型可调谐染料激光器

中国科学院上海光机所制成一种新型可调谐染料激光器.这台激光器采用Nd~(3+):YAG倍频激光和三倍频激光泵浦,用微机控制由光栅和棱镜组成的调谐系统,自动调谐激光器的输出波长,并同时自动显示激光波长.连续调谐范围复盖着整个可见光区(波长从0.42μm至0.71μm),激光脉冲宽度在30～50ps之间,平均功率大于2mW,峰值脉冲     

双波长激光测距系统及精度的研究

本文介绍用毫微秒脉宽YAG激光器的基频光(1.064μm)和倍频光(0.532μm)进行双波长激光测距的研究结果。实验装置的测时精度优于22ps(r. m. s.),测距精度优于15cm。若将二倍频改为三倍频(0.355μm)或对输出的二波长激光的脉冲峰值相对抖动进行修正,则测距精度可达厘米级。     

80 mm×80 mm衍射光栅零级衍射效率实验研究

研制了一种用于激光惯性约束聚变研究的衍射光栅。光栅的制作采用离子束刻蚀方法,光栅尺寸为80 mm×80 mm,工作周期为90μm,对1.053、0.527、0.351μm 3种波长的激光束进行谐波分离。利用YLF激光器系统对衍射光栅的性能参数进行测试,结果表明,衍射光栅对波长为0.351μm的三倍频激光束零级衍射效率为79.7%。     

LBO倍频1.8 W连续671 nm红光激光器

Nd：YVO4晶体中掺杂的Nd^3 除了1．064μm的受激辐射跃迁外，还可产生1．342μm波段的弱辐射，经腔内倍频，最终可输出671nm的红色激光。报道了一种光纤耦合半导体激光二极管(LD)阵列端面抽运Nd：YVO4晶体，腔内采用Ⅰ类临界相位匹配LBO(LiB3O5)晶体倍频，实现波长为671nm的全固态红光激光器瓦级输出的理论分析和实验结果。采用短三镜折叠腔结构，通过对激光晶体热透镜焦距的估算，用计算机优化设计选取了合适的谐振腔参数，在芯径为400μm的光纤耦合808nm半导体激光二极管阵列抽运下，当注入功率为8W时，获得了波长为671nm的红光基模稳定输出．最高输出功率达1．8W，光-光转换效率达22．5％。     

非线性光子晶体二次谐波的产生与仿真

在光子晶体的一维周期极化结构中，其频率转换只允许在单一方向上进行，而二维准相位匹配光子晶体比一维准相位匹配光子晶体具有更多方向上的倒格矢。故可实现多方向、多波长的同时倍频。文中在各向异性非线性FDTD算法的基础上。对周期为6．82方形格子二维周期性极化的LiNbO3非线性光子晶体进行了分析，给出了利用一阶准相位匹配来实现1．06μm波长的二倍频方法。     

紧凑型连续波半导体激光倍频的488nm蓝光激光器

利用波导型准相位匹配周期极化反转铌酸锂(PPLN)晶体直接倍频波长为976nm的连续半导体激光二极管,在 接近室温的晶体工作温度(28℃)下,获得了488nm的连续蓝光输出,最大输出大于20mW。所用的晶体尺寸为8mm× 1．4mm×1mm,波导截面为4．5μm×3．5μm,极化周期为5．2μm。研究了波导型PPLN晶体的倍频效率与温度的关系。     

脉冲电光调Q 1.319μm Nd:YAG激光技术

Nd:YAG激光器输出的1.319μm激光在众多领域有重要应用,但目前研究重点集中在连续或准连续输出.采取对腔镜镀高选择性膜及使用色散棱镜等措施抑制1.064μm波长振荡、输出1.319μm激光,分别在自由运转及电光调Q两种情况下作了Nd:YAG激光器输出1.319μm波长的实验,得到调Q输出脉冲最大能量56 mJ,脉宽36 ns,斜效率0.2%,激光发散角2.5 mrad,输出能量不稳定度约4%,使用KTP倍频晶体得到660 nm红光输出.结果表明,用此方法实现电光调Q 1.319 μm脉冲激光及其倍频光输出切实可行,具有重要应用潜力.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.