Effect of ZnO-B_2O_3 Glass Addition on the Microwave Dielectric Properties of BaO-Nd_2O_3-TiO_2-Bi_2O_3 System

The effect of ZnO-B2O3(ZB) glass addition on the sintering behavior, microstructures and microwave dielectric properties of BaO-Nd2O3-TiO2-Bi2O3 (BNTB) system was investigated with the aid of X-ray diffraction, scanning electron microscopy and capacitance meter. It is found that the ZB glass addition, acting as a sintering aid, can effectively lower the sintering temperature of BNTB system to 850 ℃. The dielectric constant of BNTB-ZB ceramics increases with the increase of soaking time and the value of dielectric loss decreased with increasing soak time. The optical dielectric properties at 1 GHz of ε=74, tan δ=4×10-4, and TCC=25 ppm/℃ were obtained for the BNTB system doped with 25 wt% ZB glass sintered at 850 ℃ for 2 h, representing that the BNTB-ZB ceramics could be promising for multilayer low temperature co-fired ceramics applications.     

Phase Structure and Dielectric Properties of Doped BaTiO3 Ceramics

The effects of two rare earth oxides such as CeO2 and Sm2O3 on the phase structure and dielectric properties of BaTiO3 ceramic were investigated. Results indicate that the dielectric constant of this system will increase greatly with the increasing content of these two oxides, and Ce^4＋ substitutes for Ba^2＋ located at A-site in ABO3 structure. Quantitative XRD analysis shows that c/a ratio in the sample with addition of CeO2 will increase, which implies the increase of tetragonality in system, causing the augment of dielectric constant, and the decrease of the crystal＇s geometrical symmetry results in curie-temperature moving towards low temperature; Sm^3＋（0.096 nm） substitutes for Ba^2＋（0.135 nm） possessing larger radius in A-site and the electrovalency in A-site increases, the mutual effect is strengthened, so the polarization is enhanced, and the dielectric constant increases notablely.     

Structure and dielectric properties of ZnO and Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> doped BaO-TiO<Subscript>2</Subscript> system microwave ceramics

The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6＋y ＋0.02 mol% SnO2＋0.01 mol% MnCO3＋x mol% Nb2O5（x=0-0.05, y=0-0.08） system ceramics were studied as a function of the amount of ZnO and Nb2O5 doped. Addition of （y=0-0.05） ZnO and （x=0-0.025） Nb2O5 enhanced the reactivity and decreased the sintering temperature effectively. It also increased the dielectric constant ε r and quality factor Q（=1/tan 8） of the system due to the substitution of Ti^4＋ ions with incorporating Zn^2＋and Nb^5＋ ions, which was analyzed by the reaction ZnO＋Nb2O5＋ 3 TiTxTi →ZnTi＋ 2NbTi＋3TiO2. When the system doped with （y=0.05） ZnO and （x=0.025） Nb205 were sintered at 1 160 ℃ for 6 h, the εr. Qf0 value and rfwere 36.5, 42 000 GHz, and＋1.8 ppm/℃, respectively, at 5 GHz.     

Microwave sintering of Ca0.6La0.2667TiO3 microwave dielectric ceramics

Ca0.6La0.2667TiO3 ceramics were prepared by conventional and microwave sintering techniques and their sinterability,microstruc-ture,and microwave dielectric properties were investigated in detail for comparison.Densified Ca0.6La0.2667TiO3 ceramics were obtained by microwave sintering at 1350oC for 30 min and by conventional sintering at 1450oC for 4 h.An unusual phenomenon was found that some larger grains(grain size range:8-10 μm) inclined to assemble in one area but some smaller ones(grain size range:2-4 μm) inclined to gather in another area in the microwave sintered ceramics.The microwave dielectric properties of Ca0.6La0.2667TiO3 ceramics prepared by micro-wave sintering at 1350oC were as follows:dielectric constant(εr) = 119.6,quality factor(Qf) = 17858.5 GHz,and temperature coefficient of resonant frequency(τf) = 155.5 ppm/oC.In contrast,the microwave dielectric properties of the ceramics prepared by conventional sintering at 1450oC were εr = 117.4,Qf = 13375 GHz,and τf = 217.2 ppm/oC.     

Dielectric Properties of B2O3 Doped MgTiO3-CaTiO3 System Ceramics

The dielectric ceramics with a main crystal phase of MGTiO3 and additional crystal phase of CaTiO3 were prepared by the conventional electronic ceramics technology .the strucures of MgTiO3 are ilmenitetype,and belong to hexagonal syngony.the ratio of MgTiO3 to Ca TiO3 doping on the dielectric properties of MGTiO3-CaTiO3(MCT)ceranics were inrestigated.the addition of B2O3 decreases the sintering temperatnre and results in rapid desification without obrious negative effect on the Q values of the system(Q=1/tan ).B2O3 exists as liquid phase in the sintering process,promoting the reactions as a singering agent.     

Structure and Dielectric Properties of ZnO and Nb2O5 Doped BaO-TiO2 System Microwave Ceramics

The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6 y 0.02 mol% SnO2 0.01 mol% MnCO3 x mol% Nb2O5(x=0-0.05, y=0-0.08) system ceramics were studied as a function of the amount of ZnO and Nb2O5 doped. Addition of (y=0-0.05) ZnO and (x=0-0.025) Nb2O5 enhanced the reactivity and decreased the sintering temperature effectively. It also increased the dielectric constant εr and quality factor Q(=1/tan δ) of the system due to the substitution of Ti4 ions with incorporating Zn2 and Nb5 ions, which was analyzed by the reaction ZnO Nb2O5 3 TiTiX→ZnTi 2NbTi 3TiO2. When the system doped with (y=0.05) ZnO and (x=0.025) Nb2O5 were sintered at 1 160 ℃ for 6 h, the εr, Qfo value and τf were 36.5, 42 000 GHz, and 1.8 ppm/℃, respectively, at 5 GHz.     

Low-temperature sintering and microwave dielectric properties of Ba<Subscript>2</Subscript>Ti<Subscript>3</Subscript>Nb<Subscript>4</Subscript>O<Subscript>18</Subscript> ceramics

The effects of CuO and H3BO3 additions on the low-temperature sintering,microstructure,and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics were investigated.The addition of less amount of CuO (< 1 wt%) considerably facilitated the densification of Ba2Ti3Nb4O18 ceramics.Appropriate addition of H3BO3 (< 3.5 wt%) remarkably improved the microwave dielectric properties of ceramics.The addition of H3BO3 and CuO successfully reduced the sintering temperature of Ba2Ti3Nb4O18 ceramics from 1300 to 1050 ℃.B...     

Dielectric Properties of Bi_4Ti_3O_(12) Ceramics by Impedance Spectroscopic Method

Various lead-free ceramics have been investigated in search for new high-temperature dielectrics. In particular, Bi_4Ti_3O_(12) is a type of ferroelectric ceramics, which is supposed to replace leadcontaining ceramics for its outstanding dielectric properties in the near future. Ferroelectric ceramics of Bi_4Ti_3O_(12) made by conventional mixed oxide route have been studied by impedance spectroscopy in a wide range of temperature. X-ray diffraction patterns show that Bi_4Ti_3O_(12) ceramics are a single-phase of ferroelectric Bi-layered perovskite structure whether it is calcined at 800 ℃ or after sintering production. This study focused on the effect of the grain size on the electric properties of BIT ceramics. The BIT ceramics with different grain sizes were prepared at different sintering temperatures. Grain becomes coarser with the sintering temperature increasing by 50 ℃, relative permittivity and dielectric loss also change a lot. When sintered at 1 100 ℃, r values peak can reach 205.40 at a frequency of 100 k Hz, the minimum dielectric losses of four different frequencies make no difference, all close to 0.027. The values of Ea range from 0.52 to 0.68 e V. The dielectric properties of the sample sintered at 1 100 ℃ are relatively better than those of the other samples by analyzing the relationship of the grain, the internal stresses, the homogeneity and the dielectric properties. SEM can better explain the results of the dielectric spectrum at different sintering temperatures. The results show that Bi_4Ti_3O_(12) ceramics are a kind of dielectrics. Thus, Bi_4Ti_3O_(12) can be used in high-temperature capacitors and microwave ceramics.     

Ba3La2Ti2Ta2O15: A new microwave dielectric of A5B4O15-type cation-deficient perovskites

The synthesis, structure and properties of a new A5B4O15-type cation-deficient perovskite Ba3La2Ti2Ta2O15 were discribed. The compound was prepared by the conventional solid-state reaction route. The phase and structure of the ceramics were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）. The results reveal that the compound is successfully synthesized. The compound crystallizes in the trigonal system with unit cell parameter a=5.6730（2） A, c=11.6511（2） A, V=324.93（1） A^3 and Z=1. The microwave dielectric properties of the ceramic are studied using a network analyzer, and it shows a high dielectric constant of 45.1, a high quality factors with Q×fof21 029 GHz, and a positive τf of 5.3 ppm℃^-1.     

Phase structure and electrical properties of La<Subscript>2</Subscript>O<Subscript>3</Subscript>-doped BiInO<Subscript>3</Subscript>-PbTiO<Subscript>3</Subscript> ceramics with high curie temperature

The phase structure and electrical properties of pure and La2O3-doped Bi-InO3-PbTiO3 （BI-PT） ceramics were studied respectively. In （1 -x）BI-xPT （x=0.72-0.80） ceramics, the stability of tetragonal phase increased with increasing x, and pure perovskite structure was obtained for x=-0.80 ceramics. The phase transition temperature range was between 575 ℃ and 600 ℃ for x=0.72-0.80 ceramics, higher than that of PT （-490 ℃）. The c/a ratio almost linearly decreased with increasing La2O3 content in x-0.80 ceramics. It is believed that Pb^2＋ vacancies were formed by La^3＋ substituting Pb^2＋ in La2O3-doped BI-PT ceramics. Tc shifted to lower temperature by 30 ℃/mol% La2O3. The maximum dielectric constant 8557 around 559 ℃ was exhibited in 0.5mol%-doped BI-0.80PT ceramics. La2O3-doped ceramics could be poled resulting from decreasing of c/a ratio and improving of dielectric loss and resistivity. The maximum piezoelectric coefficient d33 was 12 pC/N for 2mol%-doped BI-0.80PT ceramics.     

Low-temperature sintering and microwave dielectric properties of Li2MgTi3O8 ceramics doped with BaCu（B2O5）

The influences of BaCu(B₂O₅) (BCB) addition on sintering, microstructure and microwave dielectric properties of Li₂MgTi₃O₈ ceramics were investigated using X-ray diffractometry, scanning electron microscopy and microwave dielectric measurements. The experimental results show that a small amount of BaCu(B₂O₅) addition can effectively reduce the sintering temperature to 900 °C, and induce only a limited degradation of the microwave dielectric properties. Typically, the best microwave dielectric properties of ɛ _r=24.5, Q×f =24 622 GHz, τ _f=4.2×10⁻⁶ °C⁻¹ are obtained for 1.0% BCB-doped Li₂MgTi₃O₈ ceramics sintered at 900 °C for 3 h. The BCB-doped Li₂MgTi₃O₈ ceramics can be compatible with Ag electrode, which may be a strong candidate for low temperature co-fired ceramics applications.     

Preparation, Characterization and Dielectric Property of Sr5 LaTi3 Nb7O30 Ceramic

Sr5LaTi3Nb7O30 ceramic was prepared by the conventional high temperature solid-state reaction route. The sintered samples were characterized by X-ray diffraction, scanning electron microscopy ( SEM ), differential thermal calorimetry ( DSC ) and dielectric measurements. The results show Sr5LaTi3Nb7O30 belongs to paraclectric phase of filled tetrngonal TB structure at room temperature, and undergoes a diffuse phase transition in the temperature range of -54-34℃ . And Sr5LaTi3Nb7O30 ceramic shows a high dielectric constant of 479 with a low dielectric loss of 0.005 at 1MHz . In comparison with Ba-based ceramics with TB structure, the temperature coefficients of the dielectric constant ( τt ) is significantly reduced.     

Effect of sintering aid CuO-MnO2 on dielectric properties of 0.5Ba(Mg1/3Nb2/3)O3-0.5Ba(Ni1/3Nb2/3)O3 ceramics

Microstructures and microwave dielectric properties of 0.5Ba(Mg_1/3Nb_2/3)O₃-0.5Ba(Ni_1/3Nb_2/3)O₃ ceramics with x wt% CuO−x wt% MnO₂ additions (x=0.25–1) prepared by conventional solid-state route were investigated. It is found that low level-doping of CuO-MnO₂ can significantly improve the density of the specimens and their microwave dielectric properties. The relative density of 0.5Ba(Mg_1/3Nb_2/3)O₃-0.5Ba(Ni_1/3Nb_2/3)O₃ ceramics can be increased by 95% sintering at 1 330 °C due to the liquid phase effect. The second phase is not observed in ceramics with CuO-MnO₂ addition. The parameter ε _r increases with increasing sintering temperature, and Q _f is effectively promoted by CuO-MnO₂ addition. Higher CuO-MnO₂ content would make τ_f value more positive. Meanwhile, ε _r value of 30.5, Q _f value of 63 200 GHz and τ _f value of 0.5 ppm/°C were obtained for 0.5Ba(Mg_1/3Nb_2/3)O₃-0.5Ba(Ni_1/3Nb_2/3)O₃ ceramics with 0.5 wt% CuO-0.5 wt% MnO₂ addition sintered at 1 330 °C for 4 h.     

Formation and dielectric properties of Mn-Doped BSTN composite ceramics

The influence of Mn doping on the formation and dielectric properties of 0.7BaO·0.3SrO·(1−y)TiO₂·yNb₂O₅ (BSTN) composite ceramics were investigated. The Mn was doped according to the formula 0.7BaO·0.3SrO·(0.7−z)TiO₂·0.3Nb₂O₅·zMnO₂ (BSTNM). The results show the two phases, perovskite phase BST and the tungsten bronze phase SBN, are coexistence in BSTNM as they are in BSTN composite ceramics. The Mn ions doped in BSTN substitute for Nb⁵⁺ ions in the tungsten bronze phase, and then, the Nb⁵⁺ ions substitute for Ti⁴⁺ ions in the perovskite phase. With the increasing of Mn dopant, the content of the perovskite phase increases while that of the tungsten bronze phase decreases, and the grain size of the perovskite phase decreases. As well as, the phase transition temperature of tungsten bronze phase increases with value z increasing from 0 to about 0.05.     

Preparation, Characterization and Dielectric Properties of Ba6Mg0.67Nb9.33O30 Ceramic

A new niobate Ba6Mg0.67Nb9.33O30 was ssnthesized in the BaO-MgO-Nb2O5 system by solid state reaction at 1350 ℃ for 48 b. The strncture and dielectric properties of Ba6Mg0.67Nb9.33O30 were determined by X-ray pouder diffraction, straining electron microscopy and dielectric measurements. The results show that Ba6Mg0.67Nb9.33O30 belongs to ferroelectric phase of filled tetragonal tungsten bronze structure at room temperature with unit cell parameters ： a = 1. 26052（4） nm , c = 0.40045（2） nm, space group P4bm , calculated density 5 . 707g. cm ^-3 . Ba6Mg0.67Nb9.33O30 belongs to relaxor ,ferroetectrics undergoing diffusive phase transition, and the transition temperature （ Tc ） is 30 ℃ observed at 10 kHz. At room temperature, Ba6Mg0.67Nb9.33O30 eeramic has a high dielectric constant 850 at 1 MHz and a low dielectric loss of 0. 0052.     

Structural and Dielectric Properties of Ba5RNiNb9O30 （R = La, Nd and Sm） ceramics

1 IntroductionSince the discovery of ferroelectricity and relatedproperties in BaTiO3,a large amount of research work onoxidesin search of novel materials for industrial applica-tions ,has been done .High performance dielectric ceram-ics are applied as key materials for resonators , discreteand multiplayer (MLC) capacitors ,andtemperature com-pensating capacitors . Some ferroelectric oxides are alsovery important due to the rapid progress in microwavetelecommunications ,satellite broadcastin…     

Dielectric Properties of Ag（Nb1-xTax）O3 and Bi2O3 Doped Ag（Nb1-xTax）O3 Ceramics

Dielectric properties of Ag（Nb1-xTa）O3 and Bi2O3 doped Ag（Nb1-xTax）O3 solid solutions were investigated. The results show that with the increase of Ta content （x）, the sintering temperature increased, and the dielectric loss （tanδ） and the temperature coefficient （αc） decreased. Ag（Nb1-xa）O3 （x=0.4） ceramics sintered at 1 100℃ had the highest permittivity （516.8） and a lower tanδ （0.0021） at 1 MHz, and its temperature coefficient was about 191 ppm/℃. The sintering temperature of Ag（Nb1-xTa）O3 （x=0.4） was lowered by the addition of Bi2O3, and its dielectric properties were improved. Ag（Nb0.6Ta0.4）O3 ceramics with 2.5 wt% Bi203 addition presented the optimum dielectric properties （ε=566, tanδ= 0.0007 and αc≈0ppm/℃） （1 MHz）,