光纤旋转连接器的发展及其军事应用

光纤旋转连接器是一种广泛应用于军事国防、工业等领域的关键器件.光纤旋转连接器的功能为将光信号从旋转平台传输到静止平台.介绍了光纤旋转连接器的具体用途,描述了单通道光纤旋转连接器和多通道旋转连接器的工作原理和具体制作方法.介绍了国外光纤旋转连接器的发展动态和技术指标.制作了插入损耗小于2dB的单模单通道光纤旋转连接器.进...     

新颖八芯多模光纤连接器

本文介绍一种新型低损耗八芯多模光纤连接器,它是一种螺纹式快速活动连接器.插入损耗小于0.8 dB,能承受1770N拉力,工作温度为一40～70℃.此连接器已应用于雷达光纤通信系统.     

一种实用型简易光纤固定连接器

本文介绍一种结构新颖、能重复使用、接续快的光纤固定连接器(FMS-1型)。该器件仅由两只元件构成,体积小。对单模光纤的平均插入损耗为0.173dB,对多模光纤的插入损耗<0.1dB。     

多通道宽带光纤旋转连接器的实验研究

针对光纤旋转连接器在轴向旋转光通信系统中的应用和技术特点,研制了一种基于Dove棱镜和光纤准直器的空分复用多通道宽带光纤旋转连接器。通过分析光信号在多通道宽带光纤旋转连接器中的光路和光程,得出了850、1 310和1 550nm 3波长光路传输时的出射偏移量,并据此设计Dove棱镜的几何尺寸和光纤准直器收发光路,使其达到宽带耦合最佳位置。实验结果表明,经由多通道宽带光纤旋转连接器传输的850~1550nm波长信号最大插入损耗为4.7dB,回波损耗为43.78dB。光纤旋转连接器在-40~70℃时的插入损耗最大变化值为2.0dB。将光纤旋转连接器接入传输速率为1.32Gbit/s的数字视频复用系统中,数字信号的丢帧率为0,以太网和视频指标均满足实际信号传输要求。     

光纤连接器用插芯的原材料

最初，光纤连接器用插芯是将金属棒材(铁、不锈钢等)切削外形后再加工Ф0.125mm的内孔制作而成的。采用金属棒材加工光纤连接器用插芯，较难控制产品的精度(特别是内孔的光洁度)，且无法达到市场需求的大批量生产，因此，研发人员开始开发其它能够进行大批量生产的光纤连接器用插芯材料。     

一种新型的塑料光纤连接器

提出了一种新型的倒锥透镜型凸面发射凹面接收的塑料光纤连接器.用光线追迹法分析了凸面发射凹面接收的端面结构与连接损耗的关系.计算结果表明,当光纤单向工作且端面间隙不大时,出射端为凸球面、接收端为凹球面的连接方式比光纤出射端和接收端都是平面的连接方式的损耗要小(<0.3 dB),在一定意义上证明了该塑料光纤连接器的可行性.     

基于MEMS工艺的集成光纤连接器

一种基于MEMS技术的新型光纤连接器,在硅V型槽上方集成制造电沉积镍薄膜金属盖板,其两端喇叭口形导引通道方便光纤插拔,中间平直部分的夹持通道实现光纤的定位和精确自对准.该器件体积小巧、可集成制造并且重复性好,测试的插入损耗值小于0.3dB.对此自适应式可集成制造光纤连接器的结构设计和制作工艺作了着重介绍.     

非预置光纤冷接技术工艺分析

介绍了非预置光纤连接器的定义、应用,通过对普通连接器损耗产生机理及生产工艺的分析,剖析了非预置光纤连接器接续机理、特点及关键技术,并对相关问题提出了改进建议及设想。     

低耦合损耗的光电混合光纤旋转连接器

设计了一种光电混合光纤旋转连接器,能实现相对旋转的光信号在较大对准误差范围内低损耗连接.旋转状态下的自聚焦透镜准直光纤输出的光信号,并由PIN光电探测器将其转换为电信号,冉由激光器根据电信号再生出原始光信号继续在光纤通讯系统中传输.该光电混合光纤旋转连接器在离轴偏移量至520μm或对准倾斜角至0.5°时的附加耦合损耗为0.3 dB,而采用双自聚焦透镜的光纤旋转连接器要获得小于3 dB的插入损耗,其离轴偏移或倾斜角度必须小于100 μm和0.10°相比之下,本文设计的光纤旋转连接器能降低系统对机械加上及装配精度的要求,具有较高的实用价值.     

千兆宽带入万家——3M全国光纤连接器大奖赛北京站圆满成功

继杭州、石家庄、唐山之后,3M全国光纤连接器大奖赛北京站近日成功举办。有了前几站的经验,此次活动非常顺利,两个小时内比赛即全部完成。据了解,此次活动的参赛选手主要是北京联通FTTH的工程施工人员,每位选手必须在6min内制作两个3M8802光纤连接器,按插入损耗值由小到大排名。最终,来自北京市光环电信集团的参赛选手以0.04dB的插入损耗夺得北京赛区冠军。在赛后的接续演示中,更是达到了0.01dB的过人成绩。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.