Effect of Al Doping on the Electric and Dielectric Properties of CaCu3Ti4O12

Al-doped CaCu₃Ti_{4− x} Al _x O_{12− x /2} (CCTO, x =0–0.1) ceramics were prepared by the solid-state reaction, and their electric and dielectric properties were investigated. Al doping has been shown to reduce the dielectric loss remarkably while maintaining a high dielectric constant. At x =0.06, the loss tangent (tan δ) was below 0.06 over the frequency range of 10²–10⁴ Hz, and the dielectric constant was 41 000 at 10 kHz. Impedance spectra indicated that Al doping increased the resistivity of the grain boundary by an order of magnitude. The improvement of the dielectric loss in Al-doped CCTO was attributed to the enhanced grain boundary resistivity.     

Microwave Dielectrics in the (La1/2Na1/2)TiO3–Ca(Fe1/2Nb1/2)O3 System

Dielectric properties of the system (1 − x)(La_1/2Na_1/2)TiO₃– _x Ca(Fe_1/2Nb_1/2)O₃, where 0.4 # x # 0.6, have been investigated at microwave frequencies. The temperature coefficient of resonant frequency (τ_f), nearly 0 ppm/°C, was realized at x = 0.58. These ceramics had perovskite structure and showed relatively low dielectric losses. A new dielectric material applicable to microwave devices having Q · f of 12000–14000 GHz and a dielectric constant (ε_r) of 59–60 has been obtained at 1300–1350°C for 5–15 h sintering.     

Microstructure–Dielectric Properties Relationship in Ba0.6Sr0.4TiO3–Mg2SiO4–Al2O3 Composite Ceramics

0.60Ba_0.6Sr_0.4TiO₃(BST)–(0.40− x )Mg₂SiO₄(MS)– x Al₂O₃ ( x =0, 0.5, 3, 5wt%) composite ceramics exhibit excellent characteristics suitable for tunable device applications. With increasing amount of Al, the dielectric peak can be quantitatively broadened and suppressed; the "phase transition temperature" T _c or ( T _m) shifts to a lower temperature. Meanwhile, the tunability is still high in a wider temperature range. Far from T _c, pyroelectric effects are observed by using the Byer and Roundy technology and Slim polarization hysteresis loops are observed under high ac dielectric field at 10Hz. These proved the existence of spontaneous polarization in certain possible orientations in a broad temperature range above T _c in the paraelectric medium and reveal why 0.60BST–(0.40− x )MS– x Al₂O₃ have such remarkable dielectric nonlinearity.     

Effects of La on Dielectric and Piezoelectric Properties of Pb1−xLa2x/3(Nb0.95Ti0.0625)2 O6 Ceramics

Ceramics with the chemical compositions of Pb_{1− x} La_{2 x /3}(Nb_0.95Ti_0.0625)₂O₆ (0≤ x ≤0.060) (PLTN) were prepared by the conventional solid-state reaction method. X-ray diffraction analysis indicated that Ti and La doping not only decreased the rhombohedral–tetragonal phase transformation temperature, but also stabilized the orthorhombic phase of PLTN ceramics. All ceramics sintered at 1190°–1250°C had shown the pure orthorhombic ferroelectric phase. La doping suppresses grain growth and inhibits the formation of pores and cracks, resulting in an increase in relative density up to 97%. The amount of La doping to PLTN ceramics obviously affect ceramics' piezoelectric constant ( d ₃₃) and dielectric loss (tanδ). The sample with x =0.015 possesses high Curie temperature ( T _c=560°C), low dielectric loss (tanδ=0.0054), and excellent piezoelectric constant ( d ₃₃=92 pC/N), presenting a high potential to be used in high-temperature applications as piezoelectric transducers.     

Microwave Dielectric Properties of CaTiO3-CaAl1/2Nb1/2O3 Ceramics Doped with Li3NbO4

The microwave dielectric properties of CaTi_{1− x} (Al_1/2Nb_1/2) _x O₃ solid solutions (0.3 ≤ x ≤ 0.7) have been investigated. The sintered samples had perovskite structures similar to CaTiO₃. The substitution of Ti⁴⁺ by Al³⁺/Nb⁵⁺ improved the quality factor Q of the sintered specimens. A small addition of Li₃NbO₄ (about 1 wt%) was found to be very effective for lowering sintering temperature of ceramics from 1450–1500° to 1300°C. The composition with x = 0.5 sintered at 1300°C for 5 h revealed excellent dielectric properties, namely, a dielectric constant (ɛ_r) of 48, a Q × f value of 32 100 GHz, and a temperature coefficient of the resonant frequency (τ_f) of −2 ppm/K. Li₃NbO₄ as a sintering additive had no harmful influence on τ_f of ceramics.     

Structure and Microwave Dielectric Properties of Hexagonal Ba[Ti1−x(Ni1/2W1/2)x]O3 Ceramics

Microwave dielectric ceramics with the composition of Ba[Ti_{1− x} (Ni_1/2W_1/2) _x ]O₃ ( x =0.4–0.6) were prepared by a solid-state reaction method. The evolution of the crystalline phases was investigated by X-ray powder diffraction analysis. A cubic-to-hexagonal phase transition occurred between 1000° and 1300°C. The phase transition is irreversible; thus, the hexagonal phase remains stable at room temperature. The X-ray powder diffraction data for x =0.5 were refined using the Rietveld method. It was identified as a h -BaTiO₃-type hexagonal perovksite with the space group of P 6₃/ mmc . It also reveals that random occupancy of Ti⁴⁺ and W⁶⁺ ions occurs in the B-site substructures, whereas Ni²⁺ ions exclusively occupy the octahedral site in the corner-sharing octahedron. The dielectric properties of dense-sintered ceramics were characterized at microwave frequencies. With an increase in x from 0.4 to 0.6, the Q × f value increased from 26 700 to 42 000 GHz, whereas ɛ_r decreased from 29.8 to 20.0, and τ_f from +6.5 to −9.9 ppm/°C.     

Effects of Stacking Scheme on Microwave Dielectric Characteristics of Ca(Mg1/3Nb2/3)O3–Ba(Zn1/3Nb2/3)O3 Layered Dielectric Resonators

Ca(Mg_1/3Nb_2/3)O₃ (CMN) and Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic disks were stacked with three stacking schemes, designated as CMN/BZN, CMN/BZN/CMN, and BZN/CMN/BZN, to yield layered dielectric resonators, and the microwave dielectric characteristics were evaluated with the TE_01δ mode. Both experiments and finite element analysis showed that the microwave dielectric characteristics of the layered resonator were determined not only by the volume fraction of BZN but also by the stacking scheme. For each stacking scheme, a good combination of microwave dielectric characteristics with an effective dielectric constant of 34.33–34.52, a Q × f value of 58 800–62 080 GHz, and a near-zero temperature coefficient of resonant frequency could be achieved by adjusting the volume fraction of BZN. The effects of the stacking scheme on the microwave dielectric characteristics of the temperature-stable layered resonator were discussed by combining finite element analysis and dielectric composite models.     

Synthesis of BaCu(B2O5) Ceramics and their Effect on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Ceramics

BaCu(B₂O₅) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B₂O₅) phase was formed at 700°C and melted above 850°C. The BaCu(B₂O₅) ceramic sintered at 810°C had a dielectric constant (ɛ_r) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τ_f) of −32 ppm/°C. As the BaCu(B₂O₅) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B₂O₅) was added to the Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B₂O₅) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛ_r=35, and τ_f=22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B₂O₅) ceramic sintered at 875°C for 2 h.     

High Dielectric Permittivity Behavior in Cu-Doped CaTiO3

Cu-doped CaTiO₃-based polycrystalline ceramics have been prepared by the conventional solid-state sintering. Our results indicate that the dielectric constant can be enhanced greatly by increasing the Cu-doped content, which show weak frequency and temperature dependence. The fitted activation energy is almost same (∼0.10 eV) as the Cu-doped content is 0.4–0.6, which may be ascribed to the first ionization of the oxygen vacancies. The origin of the high dielectric permittivity observed in these Ca_{1− x} Cu _x TiO₃-based ceramics should be attributed to the interfacial polarization mechanism, and can be well described by the percolation theory with f _c≈0.27 and s ≈0.74.     

Ferroelectric and Ferromagnetic Properties of Hot-Pressed Bi0.95−xLa0.05TbxFeO3 Ceramics

Multiferroic Bi_{0.95− x} La_0.05Tb _x FeO₃ (BLTFO) ceramics were prepared by hot-pressing. It was found that their dielectric properties were very sensitive to sintering temperature. The samples hot-pressed at 740°C show stable dielectric constant and rather low loss (∼1%) in the frequency range up to 1 MHz. When the nominal content of Tb is <0.08, the atomic arrangement keeps the R 3 c symmetry, while a phase transition appears at x ≈0.08–0.10. The introduction of Tb enhances the coercive field of the BLTFO ceramics and then restrains the ferroelectricity gradually. The doping of Tb at x ≤0.10 increases the ferromagnetization.     

High-Temperature Dielectrics in the BiScO3–BaTiO3–(K1/2Bi1/2)TiO3 Ternary System

Perovskite solid solution in the (1− x )[0.4BiScO₃–0.6BaTiO₃]+ x (K_1/2Bi_1/2)TiO₃ [BSBT–KBT x ] system was synthesized using conventional sintering and hot-isostatic pressing. Dielectric properties of BSBT ceramics with different dopant levels of KBT were characterized as a function of temperature and frequency for potential use of high-temperature capacitors. The BSBT ceramics with KBT exhibited high dielectric permittivities (ɛ_r) (>1700 at RT) and low dielectric loss over the temperature range from 100° to 300°C, with flat temperature coefficients of permittivity (TCɛs). In addition, BSBT ceramics with increasing KBT were observed to possess dielectric relaxation characteristics at temperatures (>RT) as observed in lead-based relaxors. Furthermore, high energy densities, being on the order of 4.0 J/cm³ at 220 kV/cm was observed for the BSBT–KBT20 ceramics from the electric-field polarization behavior.     

Effect of BiScO3 and LiNbO3 on the Piezoelectric Properties of (Na0.5K0.5)NbO3 Ceramics

Lead-free potassium sodium niobate-based piezoelectric ceramics (1− y )(Na_{0.5−0.5 x} K_{0.5−0.5 x} Li _x )NbO₃− y BiScO₃ (  y =0.01, x= 0–0.06) have been prepared by an ordinary sintering process. The XRD analysis showed that the structure changes from orthorhombic to tetragonal with the increase of x (at y =0.01, abbreviated as KNNBSL100 x ). At room temperature, the polymorphic phase transition from the orthorhombic to the tetragonal phase was identified at approximately 0.02≤ x ≤0.04. The piezoelectric and ferroelectric properties were significantly enhanced. The temperature dependences of the relative permittivity revealed that the Curie temperature was increased with the addition of LiNbO₃. These solid solution ceramics are promising as potential lead-free candidate materials.     

Synthesis and Properties of Multiferroic La-Modified BiFeO3 Ceramics

Multiferroic Bi_{(1− x )}La _x FeO₃ was synthesized by a modified Pechini approach. Optimal conditions for the synthesis of single-phase Bi_{(1− x )}La _x FeO₃ powder were reported. A conventional sintering process was used to fabricate Bi_{(1− x )}La _x FeO₃ ceramics. Ferroelectric and magnetic loops measured at room temperature indicate the coexistence of ferroelectricity and magnetism. The La modification of BiFeO₃ has a beneficial effect on the ferroelectric and magnetic properties. The ceramic samples show a stable dielectric constant and quite low dielectric loss between 100 Hz and 10 MHz. The piezoelectric constants of Bi_{(1− x )}La _x FeO₃ ceramics were first reported.     

Effects of V Substitution on Dielectric and Polarization Properties for Sr0.5Bi2.25Na1.25(Nb3−xVx)O12 Ceramics

The effects of V substitution for Nb on the dielectric and polarization properties of Sr_0.5Bi_2.25Na_1.25(Nb_{3− x} V _x )O₁₂ ceramics were investigated in this study. From the X-ray powder diffraction results, no secondary phase was detected in the composition range of 0–0.075. The remanent polarizations ( P _r) of the samples in the composition range of 0–0.03 were improved by the V substitution for Nb and the highest P _r value of approximately 15 μC/cm² was obtained at x =0.03; it was noted that the V substitution for Nb was effective in improving the P _r values in this ceramics. On the other hand, the coercive fields ( E _c) of the samples were on the order of approximately 40 kV/cm in such a composition range. Moreover, the anomalous variations in the dielectric constant were observed in the composition range of 0–0.075. Also, it was observed that the dielectric loss increased drastically at the temperature of approximately 500°C.     

Lanthanum-Modified (1 – x)(Bi0.8La0.2)(Ga0.05Fe0.95)O3·xPbTiO3 Crystalline Solutions: Novel Morphotropic Phase-Boundary Lead-Reduced Piezoelectrics

(1 – x )(Bi_0.8La_0.2)(Ga_0.05Fe_0.95)O₃· x PbTiO₃ (BLGF-PT) crystalline solutions have been fabricated by solid-state reactions. BLGF-PT has single perovskite phase structure with a rhombohedral–tetragonal (FE_r-FE_t) morphotropic phase boundary (MPB) at a PT content of x = 0.43. Lanthanum substitution has been found to increase the insulation resistance and decrease the coercive field down to 20 kV/cm, which results in significant improvements in dielectric and piezoelectric properties of BLGF-PT. The dielectric constant, loss tangent, Curie temperature, remnant polarization, piezoelectric d ₃₃ constant, and planar coupling factor of 1760, 0.05, 264°C, 33 μC/cm², 295 pC/N, and 0.36, respectively, have been achieved for BLFG-PT in the vicinity of the MPB. Compared with conventional Pb(Zr,Ti)O₃ (PZT) piezoelectric ceramics, the BLGF-PT is a competitive alternative piezoelectric material with decreased lead content.     

Weakly Coupled Relaxor Behavior of BaTiO3–BiScO3 Ceramics

The structural and dielectric properties of (1− x )BaTiO₃– x BiScO₃ ( x =0–0.5) ceramics were investigated to acquire a better understanding of the binary system, including determination of the symmetry of the phases, the associated dielectric properties, and the differences in the roles of Bi₂O₃ and BiScO₃ substitutions in a BaTiO₃ solid solution. The solubility limit for BiScO₃ into the BaTiO₃ perovskite structure was determined to be about x =0.4. A systematic structural change from the ferroelectric tetragonal phase to a pseudo-cubic one was observed at about x =0.05–0.075 at room temperature. Dielectric measurements revealed a gradual change from proper ferroelectric behavior in pure BaTiO₃ to highly diffusive and dispersive relaxor-like characteristics from 10 to 40 mol% BiScO₃. Several of the compositions showed high relative permittivities with low-temperature coefficients of capacitance over a wide range of temperature. Quantification of the relaxation behavior was obtained through the Vogel–Fulcher model, which yielded an activation energy of 0.2–0.3 eV. The attempt characteristic frequency was 10¹³ Hz and the freezing temperature, T _f, ranged from −177° to −93°C as a function of composition. The high coercive fields, low remanent polarization, and high activation energies suggest that in the BiScO₃–BaTiO₃ solid solutions, the polarization in nanopolar regions is weakly coupled from region to region, limiting the ability to obtain long-range dipole ordering in these relaxors under field-cooled conditions.     

Modification of MgAl2O4 Microwave Dielectric Ceramics by Zn Substitution

MgAl₂O₄ microwave dielectric ceramics were modified by Zn substitution for Mg, and their dielectric characteristics were evaluated, along with their structures. Dense (Mg_{1− x} Zn _x )Al₂O₄ ceramics were obtained by sintering at 1550°–1650°C in air for 3 h, and the (Mg_{1− x} Zn _x )Al₂O₄ solid solution was determined in the entire composition range. With Zn substitution for Mg, the dielectric constant ɛ of MgAl₂O₄ just varied from 7.90 to 8.56, while the Q × f value had significantly improved up to a maximal value of 106 000 GHz at x =1.0. Moreover, the τ_f of MgAl₂O₄ ceramics had declined from −73 to −63 ppm/°C.     

High-Q Microwave Dielectric Materials Based on the Spinel Mg2TiO4

Composite ceramics based on the spinel Mg₂TiO₄ were prepared by a conventional mixed-oxide route. To achieve the temperature stabilization of the dielectric constant, each of the composites was added with 7 mol% CaTiO₃. The effect of the substitution of isovalent Co for Mg on the microstructure and the microwave dielectric properties of the composite ceramics was also investigated. A maximum Q × f value of around 150–160 THz was obtained for the undoped Mg₂TiO₄, whereas a reduced Q × f value was observed for an increase in the Co concentration in the system (1− x )Mg₂TiO₄− x Co₂TiO₄. Upon doping with 7 mol% CaTiO₃, the Q × f value passed through a maximum with increasing Co concentration. Adding ZnO–B₂O₃ to the composite system based on Co-doped Mg₂TiO₄ resulted in a reduction of the sintering temperature by 150°–200°C without any significant degradation in the Q × f value.     

High Q Microwave Dielectric Ceramics in (Ni1−x Znx)Nb2O6 System

(Ni_{1− x} Zn _x )Nb₂O₆, 0≤ x ≤1.0, ceramics with >97% density were prepared by a conventional solid-state reaction, followed by sintering at 1200°–1300°C (depending on the value of x ). The XRD patterns of the sintered samples (0≤ x ≤1.0) revealed single-phase formation with a columbite ( Pbcn ) structure. The unit cell volume slightly increased with increasing Zn content ( x ). All the compositions showed high electrical resistivity (ρ_dc=1.6±0.3 × 10¹¹Ω·cm). The microwave (4–5 GHz) dielectric properties of (Ni_{1− x} Zn _x )Nb₂O₆ ceramics exhibited a significant dependence on the Zn content and to some extent on the morphology of the grains. As x was increased from 0 to 1, the average grain size monotonically increased from 7.6 to 21.2 μm and the microwave dielectric constant (ɛ'_r) increased from 23.6 to 26.1, while the quality factors ( Q _u× f ) increased from 18 900 to 103 730 GHz and the temperature coefficient of resonant frequency (τ_f) increased from −62 to −73 ppm/°C. In the present work, we report the highest observed values of Q _u× f =103 730 GHz, and ɛ'_r=26.1 for the ZnNb₂O₆-sintered ceramics.     

Effects of Ca/Ti Cosubstitution upon Microwave Dielectric Characteristics of CaSmAlO4 Ceramics

(Ca_{1+ x} Sm_{1− x} )(Al_{1− x} Ti _x )O₄ (0≤ x ≤0.4) ceramics were synthesized by solid-state reaction method and their microstructures and microwave dielectric properties were investigated. X-ray diffraction analysis and energy-dispersive X-ray analysis indicated that the matrix phase was a solid solution with a composition represented by the chemical formula (Ca_{1+ x} Sm_{1− x} ) (Al_{1− x} Ti _x )O₄ and minor amount of (Ca,Sm)(Al,Ti)O₃ secondary phase was detected. Ca/Ti cosubstitution could significantly improve the microwave dielectric characteristics of CaSmAlO₄ ceramics, and the excellent microwave dielectric characteristics were obtained in the modified ceramics as ɛ_r=19–23, Q × f =49 100–118 700 GHz, and τ_f=−15–15 ppm/°C.